UCC21540QDWKRQ1 vs UCC21521DWR Vergleich

Detaillierter Direktvergleich von UCC21540QDWKRQ1 von Texas Instruments und UCC21521DWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21540QDWKRQ1 UCC21521DWR
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $2,15
Number of Channels 2 —
Isolation Type Reinforced, capacitive coupling —
Isolation Voltage 5700 VRMS —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Channel-to-Channel Spacing 3.3 mm minimum (DWK package) —
Dead Time Programmable (external resistor) —
Target Transistors Power MOSFET, IGBT, GaN —
Configuration Options Dual low-side, dual high-side, or half-bridge —
UVLO 8 V (secondary side) —
Automotive Qualification AEC-Q100 —
Gehäuse 14-SOIC (DWK) SOIC-16 (DW)
Montageart Surface Mount Surface Mount
Betriebstemperatur Wide temperature range (automotive) -40C to +125C
RoHS-Status Compliant Compliant
Channel Count — 2
Isolation Rating — 5700 Vrms
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Isolation Technology — Capacitive coupling
Input Threshold — TTL and CMOS compatible (3.3 V logic)
Enable / Disable Pin — Yes (DIS)
Configurations — Dual low-side, dual high-side, or half-bridge

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