UCC21550 vs UCC21530Q-Q1 Vergleich

Detaillierter Direktvergleich von UCC21550 von Texas Instruments und UCC21530Q-Q1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ Aktiv
Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550 UCC21530Q-Q1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,25 $2,10
Kanäle 2 (dual-channel) —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5000 Vrms (reinforced, UL1577) 5.7 kVRMS (reinforced)
Isolation Technology Capacitive (silicon dioxide) —
Configurations Dual low-side, dual high-side, or half-bridge —
Supported Transistors MOSFET, SiC, GaN, IGBT —
Dead Time Programmable via DT pin resistor Programmable via DT pin resistor
UVLO Yes, on input and output supplies (A/B/C grade options) —
Betriebstemperatur -40C to +150C [DATA_NEEDED: temperature range]
Gehäuse 16-SOIC (DW, 300 mil) SOIC-14 (DWK)
Montageart Surface Mount Surface Mount
Automotive Qualification UCC21550x-Q1 family AEC-Q100 qualified —
RoHS-Status Compliant Compliant
CMTI [DATA_NEEDED: common-mode transient immunity] —
Propagation Delay [DATA_NEEDED: typical propagation delay] —
Output Peak Current (Source) — 4 A
Output Peak Current (Sink) — 6 A
Channel-to-Channel Spacing — 3.3 mm
CMTI (Common-Mode Transient Immunity) — 125 V/ns (minimum)
Maximum Switching Frequency — 5 MHz
Number of Channels — 2
Configuration — Low-side, high-side, half-bridge, dual low-side
Enable-Pin — Yes
Input Threshold — TTL and CMOS compatible
Driven Device Types — IGBT, Si MOSFET, SiC MOSFET
Qualification — AEC-Q100 (automotive)
Supply Voltage VDDI — [DATA_NEEDED: VDDI range]

Datenblätter & Ressourcen

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