UCC21750-Q1 vs UCC21710QDWRQ1 Vergleich

Detaillierter Direktvergleich von UCC21750-Q1 von Texas Instruments und UCC21710QDWRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21750-Q1 UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive

UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive

UCC21750-Q1 ✓ Aktiv
Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21750-Q1 UCC21710QDWRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,45 $2,74
Driver Type Single-channel isolated gate driver —
Isolation Technology SiO2 capacitive (galvanic isolation) SiO2 capacitive coupling
Isolation Rating (Reinforced) 5.7 kVrms —
Maximum DC Operating Voltage 2121 V DC —
Peak Source Current +10 A +10 A
Peak Sink Current -10 A -10 A
Supported Switch Types SiC MOSFET, IGBT —
Output-side Supply Voltage [DATA_NEEDED: VCC range] —
Input-side Supply Voltage (VDD) [DATA_NEEDED: VDD range] —
CMTI (Common-Mode Transient Immunity) >100 V/ns (typical) —
Propagation Delay [DATA_NEEDED: typical tpHL / tpLH] —
Protection Features DESAT overcurrent/short-circuit, active Miller clamp, UVLO (input + output), fault report DESAT, Miller clamp, UVLO, FLT, soft turn-off
Isolated Analog-to-PWM Sensor Yes (temperature or voltage sensing) —
Betriebstemperaturbereich -40C to +125C (automotive) -40 C to +150 C
AEC-Q100 Qualification Qualified (automotive grade) —
Gehäuse 16-pin SOIC (DW) wide-body, 8.0 mm creepage/clearance 16-SOIC (DW) wide-body
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Funktion — Single-channel isolated gate driver
Isolation Rating (rms) — 5.7 kVrms (reinforced)
Working Voltage (rms) — 1.5 kVrms
Target Switches — SiC MOSFETs up to 1700 V, IGBTs
Propagation Delay (typ.) — 60 ns
CMTI (min.) — 100 V/ns
Output Supply Voltage (VCC2/VEE2) — 12.8 V to 18 V
Input Supply Voltage (VDD/VCCI) — 3 V to 5.5 V
Automotive Qualification — AEC-Q100
RoHS — Compliant

Datenblätter & Ressourcen

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