UCC5310MCDR vs UCC5320 Vergleich

Detaillierter Direktvergleich von UCC5310MCDR von Texas Instruments und UCC5320 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC5320 UCC5320 - 4.3A Isolated Gate Driver | Texas Instruments

UCC5320 - 4.3A Isolated Gate Driver | Texas Instruments

UCC5320 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC5310MCDR UCC5320
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $1,85
Number of Channels 1 1
Peak Source Current 4.3 A 4.3 A
Peak Sink Current 2.2 A 4.5 A
Isolation Voltage (rms) 3 kVrms —
Input VCC Range 3 V to 15 V —
Driver VDD Range Up to 30 V —
UVLO Threshold 12 V (with respect to IGBT emitter, M-variant) —
Miller Clamp Integrated —
Propagation Delay [DATA_NEEDED: typical propagation delay] [DATA_NEEDED: propagation delay ns]
Common-Mode Transient Immunity [DATA_NEEDED: CMTI value] —
Betriebstemperatur -40C to +125C —
Gehäuse SOIC-8 (D) —
Pins 8 —
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant Compliant
Isolation Voltage (D package) — 3000 Vrms (basic)
Isolation Voltage (DWV package) — 5000 Vrms (reinforced)
Primary Supply Voltage (VDD1) — 3 V to 5.5 V
Secondary Supply Voltage (VDD2) — 9.5 V to 33 V
Ausgangskonfiguration — Split output (UCC5320S) or single (UCC5320E)
UVLO Reference — VDD2 referenced (E variant) or GND2 referenced (EC variant)
Common-Mode Transient Immunity (CMTI) — >= 100 kV/us
Betriebstemperaturbereich — -40C to +125C (junction to +150C)
Package Options — 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV)
Supported Switch Types — MOSFET, IGBT, SiC MOSFET, GaN FET

Datenblätter & Ressourcen

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