VNQ660SP-E vs VNQ660SP Vergleich

Detaillierter Direktvergleich von VNQ660SP-E von STMicroelectronics und VNQ660SP von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter VNQ660SP-E VNQ660SP
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,45 $2,45
Topologie High-Side Switch (Solid State Relay) —
Number of Channels 4 (Quad) 4
Technology STMicroelectronics VIPower M0-3 VIPower M0-3
Supply Voltage (Vcc) 6 V to 36 V —
On-State Resistance (RDS(on)) 40 mOhm per channel (typical) —
Output Current per Channel 6 A continuous —
Output Current (Peak) [DATA_NEEDED: peak current per channel] —
Input Type CMOS-compatible logic inputs —
Off-State Open-Load Detection Yes —
Undervoltage Shutdown Yes Yes
Overvoltage Shutdown / Clamp Yes —
Thermisches Abschalten Yes Yes
Current Limitation Yes Yes
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Gehäuse PowerSO-10 (Exposed Bottom Pad) PowerSO-10 (10-pin with exposed pad)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Einschaltverzögerungszeit 40 us (typ) —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
Funktion — Quad Channel High-Side Solid State Relay
Ausgangskonfiguration — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Input Compatibility — CMOS-compatible logic inputs
Open-Load Detection — Yes (off-state)
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern