1N4148WT-7 - 80V 125mA Fast Switching Diode SOD-523 | Diodes Inc
Teilenummer: 1N4148WT-7 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.13 | $0,13 |
| 10 | $0.11 | $1,10 |
| 100 | $0.07 | $7,00 |
| 500 | $0.05 | $25,00 |
| 1.000 | $0.04 | $40,00 |
1N4148WT-7 Übersicht
A switching diode is a two-terminal semiconductor device optimized to transition between conducting and blocking states with minimal storage delay. Within the broader discrete semiconductor hierarchy, switching diodes sit beneath small-signal diodes and above general-purpose rectifiers in speed class. The 1N4148 family has served as the de facto industry baseline for high-speed signal routing since the 1970s, and the WT suffix specifically maps the legacy DO-35 glass-axial 1N4148 onto the SOD-523 footprint for SMT reflow assembly.
Key features include a peak repetitive reverse voltage of 100 V (Vrrm), 75 Vrms working reverse voltage, 53 V DC blocking voltage, and a power dissipation of 150 mW on the standard FR-4 test board. The device is fully RoHS compliant, lead-free, and qualified to JEDEC JESD51 thermal test conditions. Its low junction capacitance (typically 4 pF at 0 V) preserves signal integrity in high-speed logic interfaces.
The 1N4148WT-7 employs a planar passivated silicon epitaxial junction, optimized for sub-5 ns switching. The glass-passivated die is bonded inside the SOD-523 molded plastic package with a matte tin finish that supports lead-free reflow profiles up to 260 C per JEDEC J-STD-020.
Typical applications include high-speed logic clamping, line termination, signal steering in multiplexers, freewheeling protection for small inductors, and reverse-polarity protection on low-current rails. The SOD-523 footprint saves 60% board area versus the legacy DO-35 1N4148, allowing direct migration in portable and IoT designs where every square millimeter counts.
When designing with this part, observe the 4 ns reverse recovery budget and stay below the 150 mA continuous forward rating. For higher currents use a Schottky diode, and for high-voltage isolation use a TVS or rectifier such as the 1N400x family.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Drop-in-Alternativen für 1N4148WT-7 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 1N4148WT-7 (gleiche Bauform und Footprint) – abweichend in Diode Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
1N4148WT-13
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N4148WTQ-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MMBD4148WT-7-F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BAS16TW-7-F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BAS516W6VD-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BAS16TW
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N4148X-TP
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N4148WT-7 Grenzwerte & elektrische Eigenschaften
| Diode Type | Standard Recovery, Fast Switching |
| Configuration | Single |
| Reverse Voltage (Vrrm) Max | 100 V |
| Working Reverse Voltage (Vwm) | 75 V |
| DC Blocking Voltage (Vdc) | 53 V |
| Average Rectified Forward Current (Io) | 125 mA (Diodes Inc datasheet) / 150 mA (Mouser listing) |
| Peak Forward Surge Current (Ifsm) | 2 A |
| Forward Voltage (Vf) Max | 1.25 V at 150 mA |
| Reverse Recovery Time (trr) | 4 ns |
| Junction Capacitance | 4 pF typical at 0 V |
| Power Dissipation (Pd) | 150 mW |
| Betriebstemperaturbereich | -65 C to +150 C |
| Gehäuse / Bauform | SOD-523 |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (EU Directive 2002/95/EC and 2011/65/EU) |
| Lead-Free Finish | Matte Tin (no purposefully added lead) |
1N4148WT-7 Pin-Konfiguration
| Pin 1 | CATHODE (K) — Cathode terminal (marked with bar on top face) |
| Pin 2 | ANODE (A) — Anode terminal (unmarked side) |
Typische Anwendungen
1N4148WT-7 ist geeignet für 6 Anwendungs: High-Speed Logic Clamping, Signal Steering and Multiplexing, Freewheeling Diode for Low-Voltage Inductors, Reverse-Polarity Protection on Low-Current Rails, Line Termination and Waveform Shaping, Portable and Battery Device Design.
High-Speed Logic Clamping
The 1N4148WT-7's 4 ns reverse recovery and 4 pF junction capacitance make it well suited for clamping ESD transients and logic-level overshoot on 3.3 V and 5 V signal lines. Its SOD-523 footprint preserves routing density on dense microcontroller boards, while the 100 V Vrrm headroom protects against inductive kickback. Placed between signal and ground or signal and supply rail with a series resistor, the diode clamps fast transients that slower 1N400x rectifiers would miss due to their longer trr.
Empfohlen
Signal Steering and Multiplexing
The 1N4148WT-7 is commonly deployed in analog multiplexer input stages where two or more signal paths must be OR'd or AND'd into a single downstream amplifier or ADC input. Its 4 ns trr preserves pulse edges at audio and low-RF frequencies, while its 150 mA forward rating handles typical 5 V sensor signal currents with margin. The low 4 pF capacitance prevents cross-channel feedthrough that would otherwise degrade measurement accuracy in multiplexed data-acquisition front ends.
Empfohlen
Freewheeling Diode for Low-Voltage Inductors
In flyback converters and relay driver circuits where the inductor stores under 1 mJ of energy, the 1N4148WT-7 protects switching transistors and MOSFETs from inductive kickback. Its 100 V Vrrm comfortably clamps transients from 12 V and 24 V rails, and the 4 ns trr prevents the diode from conducting during the next turn-on edge, eliminating the efficiency loss seen with slower rectifiers. The SOD-523 package saves board area versus legacy DO-35 axial 1N4148 implementations.
Empfohlen
Reverse-Polarity Protection on Low-Current Rails
For low-current 5 V or 12 V supply inputs drawing under 100 mA, a single 1N4148WT-7 placed in series with the supply line provides reverse-polarity protection at the cost of only 1.25 V of forward drop at 150 mA. Although Schottky diodes are more efficient, the 1N4148WT-7 wins on reverse leakage (under 5 uA at 75 V) and on voltage headroom for 24 V industrial buses where a Schottky's 30 V Vrrm would be inadequate.
Empfohlen
Line Termination and Waveform Shaping
In high-speed digital interfaces and pulse-shaping networks, the 1N4148WT-7 functions as a clipper or clamper to limit signal excursions within an ADC's input range. Its 1.25 V forward drop defines a precise reference for symmetric clipping around ground when paired with a second diode in opposite polarity. The 4 ns trr ensures that clipping behavior is consistent at pulse edges with sub-10 ns rise times, making it suitable for fast comparator and line-driver circuits.
Empfohlen
Portable and Battery Device Design
The 1N4148WT-7 is widely used in smartphone, wearable, and IoT battery-management designs where board area is critical and the diode handles signal-level switching rather than power rectification. Its SOD-523 1.6 mm x 0.8 mm footprint enables routing under BGA packages, while the 150 mW power dissipation rating is well matched to the < 50 mA currents typical of these applications. The RoHS-compliant matte-tin plating also satisfies lead-free reflow requirements up to 260 C.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 1N4148WT-7 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 1N4148WT-13 | 1N4148WTQ-7 | MMBD4148WT-7-F | BAS16TW-7-F | 1N4148X-TP |
|---|---|---|---|---|---|---|
| Package | SOD-523 | SOD-523 - same | SOD-523 - same | SOD-523 - same | SOD-523 - same | SOD-523 - same |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Micro Commercial Components |
| Vrrm Max | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Average Forward Current (Io) | 125-150 mA | 150 mA | 150 mA | 150 mA | 200 mA | 150 mA |
| Forward Voltage (Vf) | 1.25 V at 150 mA | 1.25 V at 150 mA | 1.25 V at 150 mA | 1.25 V at 150 mA | 1.25 V at 150 mA | 1.25 V at 150 mA |
| Reverse Recovery (trr) | 4 ns | 4 ns | 4 ns | 4 ns | 4 ns | 4 ns |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
| Automotive Grade | No (commercial) | No (commercial) | Yes (AEC-Q101) | No (commercial) | No (commercial) | No (commercial) |
Wichtigste Unterscheidungsmerkmale
- Industry-standard 1N4148 die in the smallest SMD footprint (vs. 1N4148W-7-F (SOD-123))
- Automotive-grade sibling available in same package (vs. 1N4148WTQ-7 (Q-suffix))
- Cross-brand drop-in equivalent available for sourcing flexibility (vs. 1N4148X-TP (Micro Commercial Components))
- Higher-current BAS family alternative in same footprint (vs. BAS16TW-7-F (Diodes BAS16 family))
Designhinweise
The SOD-523 land pattern should be 0.8 mm x 1.0 mm with 0.3 mm x 0.4 mm pads per IPC-7351. Thermal dissipation is dominated by the cathode pad connected to a copper pour; on a 1 oz copper FR-4 test board the package is rated for 150 mW at 25 C ambient. For higher currents reduce ambient temperature or expand the cathode copper area. Estimated: power dissipation drops to about 75 mW at 85 C ambient based on linear derating to 150 mW at 25 C.
Estimated: with a 25 C ambient and 150 mW rating, the maximum continuous forward current is approximately 200 mA at 1.25 V drop before thermal runaway. For sustained operation at the rated 125-150 mA, keep the diode away from heat sources and provide a thermal copper pour on the cathode pad. The SOD-523 thermal resistance is roughly 350 C/W degrees junction-to-ambient on a JEDEC EIA/JESD51 test board.
Do not exceed 100 V peak repetitive reverse voltage or 150 mA continuous forward current. The 4 ns trr rating applies only when switching from a forward current of 10 mA to a reverse voltage of 6 V - at lower forward currents the trr increases. Always verify the cathode marking (bar on top face) before soldering, as reversed installation is one of the most common SOD-523 assembly defects.
The 4 pF junction capacitance introduces measurable loading on signals above 50 MHz. For high-speed serial interfaces above 100 Mbps, consider a lower-diodo version such as the BAS16TW which has similar capacitance but better-controlled recovery characteristics. Place the diode as close to the signal source or clamp node as practical to minimize parasitic inductance that would otherwise degrade clamping effectiveness.
Compliance-Informationen
RoHS compliant per EU Directive 2002/95/EC and 2011/65/EU (RoHS 2). Matte tin finish with no purposefully added lead. Not AEC-Q100/AEC-Q101 qualified in the standard -7 variant; the Q-suffix part 1N4148WTQ-7 is AEC-Q101 qualified for automotive.
