1N5819-E3/73 - 40V 1A Schottky Rectifier DO-41 | Vishay
Teilenummer: 1N5819-E3/73 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 5.000 | $0.14 | $700,00 |
1N5819-E3/73 Übersicht
What is a Schottky rectifier? A Schottky rectifier (named after physicist Walter H. Schottky) is a majority-carrier diode formed by a metal-semiconductor junction. Compared with a conventional PN-junction rectifier such as the 1N400x series, a Schottky rectifier exhibits a lower forward voltage drop (typically 0.3-0.6 V versus 0.7-1.0 V), faster switching with no reverse-recovery charge, and better high-frequency efficiency. Within the discrete-semiconductor taxonomy, the 1N5819 belongs to: Schottky diode -> rectifier diode -> discrete semiconductor -> power management component.
Key specifications of the 1N5819-E3/73 include a 40 V maximum repetitive peak reverse voltage (VRRM), 1 A average rectified forward current (IF(AV)) at TL = 90 °C, a typical forward voltage of 450 mV at 1 A and a maximum of 600 mV at 1 A, an IFSM surge rating of 25 A (8.3 ms half-sine), and a maximum DC reverse leakage of 1.0 mA at TA = 25 °C / VR = 40 V. Operating junction temperature spans -65 °C to +125 °C.
The architecture is a single-chip passivated Schottky barrier in an epoxy-molded DO-41 body with axial terminations, corrosion-resistant external finish and solderable matte-tin leads. The metal barrier is formulated for low VF while keeping reverse leakage within datasheet limits.
Typical applications include low-voltage DC/DC converter freewheel and rectification stages, OR-ing diodes in redundant power supplies, polarity-protection circuits on battery-operated and USB-powered devices, solar-panel blocking diodes, and high-frequency switching-mode power supply secondary rectifiers where the absence of reverse-recovery loss is critical.
When designing with this part, pay attention to the derating curve - the 1 A rating assumes TL ≤ 90 °C and at TA = 25 °C the continuous current must be derated to about 0.5 A or less. The low forward voltage (450 mV typical) makes it especially attractive in low-voltage rails where silicon PN diodes would dissipate unacceptable power.
This page synthesizes distributor pricing, DO-41 drop-in alternatives, and practical thermal-derating notes not found in the manufacturer datasheet.
Drop-in-Alternativen für 1N5819-E3/73 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
1N5819-E3/54
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N5819G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N5819RLG
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SB140L
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SR160
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N5819-TP
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
1N5819-E3/73 Grenzwerte & elektrische Eigenschaften
| Diode Type | Schottky Barrier Rectifier |
| Configuration | Single, independent |
| Gehäuse | DO-204AL (DO-41), axial lead |
| Montageart | Through Hole |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Maximum DC Reverse Voltage (VR) | 40 V |
| Maximum RMS Reverse Voltage (VR(RMS)) | 28 V |
| Average Rectified Forward Current (IF(AV)) | 1 A (TL = 90 °C) |
| Forward Voltage (VF) typical | 450 mV at 1 A |
| Forward Voltage (VF) maximum | 600 mV at 1 A |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 25 A (8.3 ms half-sine) |
| DC Reverse Current (IR) maximum | 1.0 mA at VR = 40 V, TA = 25 °C |
| Betriebs-Sperrschichttemperaturbereich | -65 °C to +125 °C |
| Storage Temperature Range | -65 °C to +125 °C |
| Reverse Recovery Time (trr) | N/A (Schottky - no reverse recovery) |
| Lead Finish | Matte tin (solderable) |
| Packaging Code | /73 (Tape and Reel, Ammo Pack) |
| RoHS-Status | Compliant |
1N5819-E3/73 Pin-Konfiguration
| Pin 1 | Anode (A) — Forward-current input terminal; connects to lower potential side |
| Pin 2 | Cathode (K) — Forward-current output terminal; marked with a polarity band on the body |
Typische Anwendungen
1N5819-E3/73 ist geeignet für 6 Anwendungs: Low-Voltage SMPS Secondary Rectifier, Polarity-Protection / Reverse-Battery Diode, Solar Panel Blocking Diode, OR-ing Diode for Redundant Power, Freewheel / Snubber Diode for Relays and Solenoids, Signal-Demultiplexing / Logic-Level Shifting.
Low-Voltage SMPS Secondary Rectifier
The 1N5819-E3/73 is widely used as the output rectifier in low-voltage (3.3 V, 5 V, 12 V) switching-mode power supplies. Its 450 mV typical forward voltage at 1 A minimizes conduction loss compared with PN-junction rectifiers (~900 mV), and the absence of reverse-recovery charge eliminates switching loss and EMI ringing. In a 5 V/1 A buck-derived supply, the 1N5819-E3/73 typically dissipates only ~0.5 W versus ~0.9 W for a 1N4004, raising overall efficiency by ~1-2%. Engineers should place the diode close to the transformer/inductor secondary and provide adequate copper pour for thermal relief.
Empfohlen
Polarity-Protection / Reverse-Battery Diode
The 1N5819-E3/73 is a near-ideal polarity-protection diode for battery-powered and USB-powered equipment. Its 40 V reverse rating easily covers 12 V lead-acid transients, and the 450 mV typical VF means only a small efficiency penalty on the protected rail. For example, protecting a 3.7 V Li-ion powered device: at 500 mA load, dissipation is ~225 mW (versus ~350 mW for a 1N4004). Designers should place the 1N5819-E3/73 in series with the positive input rail as close to the connector as practical, and ensure the downstream load's maximum input voltage tolerance accounts for the additional VF drop.
Empfohlen
Solar Panel Blocking Diode
In small off-grid solar installations, the 1N5819-E3/73 is commonly used as a blocking diode in series with each panel string to prevent reverse current flow from the battery bank back into a darkened or shaded panel at night. The Schottky's low forward voltage (450 mV typical at 1 A) minimizes the daily energy loss compared with a silicon PN rectifier, which is critical for low-power solar applications where every percent of harvested energy matters. The 40 V reverse rating covers 12 V nominal panel strings with significant transient headroom.
Empfohlen
OR-ing Diode for Redundant Power
In redundant power-supply designs (server rails, telecom -48 V systems, industrial DC buses), the 1N5819-E3/73 is used as an OR-ing diode to combine two power sources. Schottky rectifiers are preferred here because their low VF reduces the voltage difference between the common rail and the supplies, minimizing power dissipation in the diode. For a 5 V redundant rail sharing 2 A total, dissipation per diode is ~0.9 W at full load. For higher-current OR-ing, designers often parallel two 1N5819s or upgrade to a dedicated ideal-diode MOSFET controller to reduce conduction loss further.
Empfohlen
Freewheel / Snubber Diode for Relays and Solenoids
The 1N5819-E3/73 serves as a freewheel (flyback) diode across relay coils, solenoids, and small DC motors to suppress the inductive kickback when the coil is de-energized. The 40 V reverse rating is more than adequate for typical 12 V and 24 V coils, and the Schottky's fast switching ensures the kickback voltage is clamped quickly, protecting the driving transistor. Compared with a 1N4004, the 1N5819 switches faster and reduces the peak inverse voltage seen by the switch by tens of volts, extending transistor reliability.
Empfohlen
Signal-Demultiplexing / Logic-Level Shifting
In low-frequency signal-demultiplexing and level-shifting circuits, the 1N5819-E3/73 is sometimes used as a steering diode because its low VF (~450 mV) keeps the signal-level error small while its fast switching preserves pulse edges. For example, in a 5 V logic signal-steering network feeding two rails with different priorities, the 1N5819's 1 A current rating is far above any logic-level signal current. Designers should account for the ~450 mV signal loss in downstream threshold calculations, and prefer Schottky over signal diodes (1N4148) when forward drop matters.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 1N5819-E3/73 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 1N5819-E3/54 | 1N5819G | 1N5819RLG | SB140L | SR160 |
|---|---|---|---|---|---|---|
| Package | DO-41 (DO-204AL) | DO-41 - same | DO-41 - same | DO-41 - same | DO-41 - same | DO-41 - same |
| Brand | Vishay | Vishay | Vishay | onsemi | Diodes Incorporated | Diodes Incorporated |
| Diode Type | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky |
| VRRM (Max) | 40 V | 40 V | 40 V | 40 V | 40 V | 60 V |
| IF(AV) (Max) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| VF @ 1A (typical) | 450 mV | 450 mV | 450 mV | 450 mV | 500 mV | 550-700 mV |
| Operating Junction Temperature (Temp) | -65 °C to +125 °C | -65 °C to +125 °C | -65 °C to +125 °C | -65 °C to +125 °C | -55 °C to +125 °C | -65 °C to +125 °C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Tape-and-reel Ammo Pack ("/73") format for high-volume assembly (vs. 1N5819-E3/54)
- 40 V reverse rating - ideal sweet spot for 12 V / 24 V rail designs (vs. SR160 (60 V))
- Lowest typical VF in its class - 450 mV at 1 A (vs. 1N4007 (PN rectifier))
Designhinweise
The 1N5819-E3/73 is rated at 1 A average rectified forward current (IF(AV)) only when the lead temperature TL is held at or below 90 °C. In free-air (TA = 25 °C) with no heatsink, the DO-41 package's thermal resistance of ~50 °C/W limits continuous current to roughly 0.5 A before the junction hits 125 °C. For 1 A continuous operation, the device must be mounted with both leads soldered to at least 5 mm of 1 oz copper (acting as a small heatsink) or used in pulsed applications. Estimated: thermal resistance 50 °C/W, ambient 25 °C, max junction 125 °C => max continuous IF ~0.5 A free-air; solder to copper pour for full 1 A.
For through-hole DO-41 mounting, drill 0.9-1.0 mm lead holes on a 2.54 mm (100 mil) pad pitch, with a minimum pad diameter of 1.8 mm around each hole for reliable wave soldering. Bend the leads no closer than 1.5 mm from the body to avoid cracking the epoxy encapsulation. If using the "/73" tape-and-reel format, configure axial lead-forming tooling to maintain 5.08 mm (200 mil) lead spacing before insertion.
Do not use the 1N5819-E3/73 in circuits where the reverse voltage can exceed 40 V, including inductive kickback above this threshold - pair it with a TVS or higher-voltage diode for safety margin in freewheel applications. Also avoid using this part in high-temperature environments (>100 °C ambient) without derating; the maximum reverse leakage rises exponentially with temperature and may exceed the 1 mA datasheet limit quickly. Finally, do not parallel two 1N5819s without sharing resistors - the forward-voltage mismatch can cause uneven current sharing and thermal runaway.
Compliance-Informationen
RoHS and lead-free compliant per Vishay product page; matte-tin leads are Pb-free. Not AEC-Q100 qualified - this is a commercial/industrial grade part. Halogen-free status not explicitly stated in verified data.
