2SB1116A - PNP Silicon Epitaxial Transistor, -60V, -1A | NEC
Teilenummer: 2SB1116A ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.38 | $3,80 |
| 100 | $0.28 | $28,00 |
| 500 | $0.21 | $105,00 |
| 1.000 | $0.16 | $160,00 |
2SB1116A Übersicht
A PNP bipolar transistor is a three-terminal semiconductor device in which the base-emitter junction is forward-biased and the base-collector junction is reverse-biased under normal operation; conventional current flows from emitter to collector, while electrons move from collector to emitter. The 2SB1116A family sits within the broader transistor hierarchy (BJT -> bipolar transistor -> discrete semiconductor -> semiconductor device) and pairs with NPN parts such as the MMBT1616A in complementary amplifier or push-pull output topologies. PNP silicon transistors of this generation are valued for low saturation voltage, ease of biasing on negative supply rails, and predictable hFE across temperature.
Key specifications include a maximum collector current (IC) of -1A, power dissipation (PD) of 750 mW, low VCE(sat) of -0.20V typical, and complementary pairing with MMBT1616A (NPN). The TO-92 through-hole package supports easy hand prototyping and PC board insertion in low-frequency amplifier output stages, mid-speed switching applications, and DC motor driver interfaces where modest dissipation and -60V breakdown are adequate.
The 2SB1116A is fabricated on a silicon epitaxial substrate to ensure tight hFE spread and uniform VCE(sat) characteristics from unit to unit, supporting parallel device use in higher-current output stages. Its PNP polarity makes it suitable for low-side switching of negative rails, emitter-follower configurations, and complementary-symmetry output stages in audio amplifiers where it pairs with an NPN device such as the MMBT1616A.
Typical applications include AF amplifier driver and output stages, general-purpose switching circuits, DC-DC converter low-side switches, and relay/solenoid drivers. The -60V VCEO rating further supports industrial control interfaces, line-driver stages, and hobby audio amplifier projects where a robust PNP device is required.
When laying out a PCB with this part, observe the TO-92 lead pitch (approximately 2.54 mm / 0.1 inch) and provide adequate copper pad area on each lead to carry -1A reliably. For high-temperature operation ensure the junction stays within the absolute ratings, and place the device away from heatsinking restrictions when used at sustained near-maximum dissipation.
This page integrates distributor pricing, drop-in alternatives, and design notes not consolidated in any single manufacturer datasheet, giving engineers a single reference for selecting the 2SB1116A across audio, switching, and industrial control designs.
Drop-in-Alternativen für 2SB1116A – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
2SB1116
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
KSB1116A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
KSB1116
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
KSB1116S
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
2SB1116A Grenzwerte & elektrische Eigenschaften
| Transistortyp | PNP Bipolar Junction Transistor (BJT) |
| Manufacturer | NEC |
| Polarity | PNP |
| Kollektor-Basis-Spannung (Vcbo) | -80 V |
| Kollektor-Emitter-Spannung (Vceo) | -60 V |
| Continuous Collector Current (IC) | -1000 mA (-1 A) |
| Power Dissipation (PD) | 750 mW |
| VCE(sat) Typical | -0.20 V |
| Configuration | Single |
| Application Category | AF amplifier driver / output / general purpose |
| Gehäuse | TO-92 (through-hole) |
| Montageart | Through-Hole |
| Complementary NPN Part | MMBT1616A |
| Process Technology | Silicon Epitaxial |
| RoHS-Status | unknown |
2SB1116A Pin-Konfiguration
| Pin 1 | Emitter (E) — PNP emitter terminal (current flows out of emitter) |
| Pin 2 | Collector (C) — PNP collector terminal (current flows into collector) |
| Pin 3 | Base (B) — PNP base terminal (control electrode) |
Typische Anwendungen
2SB1116A ist geeignet für 7 Anwendungs: AF Amplifier Driver Stage, AF Amplifier Output Stage (Push-Pull), General-Purpose Switching Circuit, DC-DC Converter Low-Side Switch, Relay and Solenoid Driver, Hobby Audio Amplifier Project, Complementary Output Stage in Instrumentation.
AF Amplifier Driver Stage
The 2SB1116A's PNP silicon epitaxial construction, -1A continuous collector current, and VCEO of -60V make it a strong fit for driving the output stage of audio-frequency (AF) amplifiers in the tens-to-hundreds-of-mW range. The low VCE(sat) of -0.20V typical reduces wasted dissipation across the transistor so more of the supply rail reaches the load, helping preserve audio headroom. In a complementary-symmetry driver the 2SB1116A sits between the low-current preamp and a TO-220 output pair (e.g., TIP32 / TIP31), biased by a Vbe network that sets the quiescent current. Plugged into the standard TO-92 PCB pattern with the E-C-B pinout, it offers predictable hFE and thermal behavior - useful when matched NPN/PNP halves are needed in small-signal and consumer-grade audio amplifiers where the MMBT1616A is the complementary NPN partner.
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AF Amplifier Output Stage (Push-Pull)
For low-to-medium-power audio amplifier output stages, the 2SB1116A is well matched as a pre-output driver when paired with the MMBT1616A NPN in a complementary emitter-follower arrangement. The -60V VCEO and 750 mW dissipation support 9V to 30V supply rails typical of small stereo and headphone amplifier designs, while the low VCE(sat) of -0.20V typical keeps the bottom half-cycle efficient. Mounted with adequate copper area on each TO-92 lead to carry the negative half-cycle current, it offers reproducible AC gain because the silicon epitaxial process yields tight hFE spread. Use the 2SB1116A on the negative-rail side; pair with a TIP32C TO-220 PNP at higher output levels to share dissipation.
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General-Purpose Switching Circuit
The 2SB1116A handles general-purpose low-frequency switching of relays, solenoids, LED arrays, and small DC loads thanks to its -60V VCEO, -1A IC, and a VCE(sat) of just -0.20V typical at modest collector currents. In a low-side PNP switch the emitter ties to ground (or the negative rail in emitter-follower config) and the collector drives the load, with a base resistor sized to saturate the BJT fully. Its 750 mW dissipation covers most hobby and industrial-control interfaces at 24V supply rails when switching under 100 mA continuous, and the TO-92 package is easy to hand-prototype on a breadboard or perf-board. For switching faster than several hundred kHz, choose a small-signal PNP with shorter storage time.
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DC-DC Converter Low-Side Switch
Inside small buck/boost converter control loops and linear regulators the 2SB1116A acts as a PNP pass element or low-side switch, leveraging its -60V VCEO, -1A continuous IC, and low VCE(sat) of -0.20V typical to minimize wasted voltage drop. The silicon epitaxial construction keeps hFE stable across the operating temperature range, important when the BJT is used inside a feedback control loop where the transfer characteristic must remain predictable. Mounted in a TO-92 footprint, it is easy to swap during prototyping between the 2SB1116A and the KSB1116A substitute without modifying the PCB - useful when the converter is being qualified across multiple distributors. For switching frequencies above the audio range, prefer a MOSFET pass element.
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Relay and Solenoid Driver
Industrial control boards often use the 2SB1116A as a PNP relay or solenoid driver because the -60V VCEO and -1A continuous IC rating are well matched to 12V/24V coil voltages under 1A. Add a 1N4007 flyback diode across the coil and a base resistor sized for forced beta of about 10 to guarantee saturation; the resulting VCE(sat) of about -0.20V keeps dissipation manageable at 750 mW absolute maximum. The TO-92 package is easy to hand-solder and ideal for retrofit boards where the original NEC part is being replaced with the Samsung KSB1116A in the same footprint. Pair with optocouplers for galvanic isolation on mains-side control circuits.
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Hobby Audio Amplifier Project
The 2SB1116A is a long-favorite choice in hobby and DIY audio amplifier kits because its PNP polarity, -60V VCEO, and -1A continuous IC are well matched to small stereo and headphone amplifier circuits running on 9V to 30V rails. Its documented low VCE(sat) of -0.20V typical and 750 mW dissipation make it comfortable at the modest power levels typical of hobby builds, while the TO-92 package is easy to hand-solder or to swap during breadboard prototyping. Hobbyists commonly pair it with the MMBT1616A in a discrete complementary output stage; the same project can later be re-built around the cross-brand KSB1116A without changing the PCB layout because the E-C-B TO-92 pinout is preserved.
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Complementary Output Stage in Instrumentation
Test and instrumentation front-ends using discrete BJTs benefit from the 2SB1116A's matched complementary operation with the MMBT1616A, which keeps the quiescent current balanced between the two halves and minimizes crossover distortion. The silicon epitaxial process gives predictable hFE so DC offset at the output is stable across temperature, and the -60V VCEO provides comfortable headroom for op-amp supply rails commonly used in instrumentation (typically ±12V or ±15V). The TO-92 package simplifies integration into small sensor signal-conditioning boards where the polarity pair must share the same thermal environment to reduce thermal-feedback-induced drift. Consider the KSB1116A drop-in for designs being qualified across multiple distributors.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 2SB1116A – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 2SB1116 | KSB1116A | KSB1116 | KSB1116S |
|---|---|---|---|---|---|
| Brand | NEC | NEC | Samsung | Samsung | Samsung |
| Package | TO-92 | TO-92 (same) | TO-92 (same) | TO-92 (same) | TO-92 (same) |
| Transistor Type / Polarity | PNP silicon BJT | PNP silicon BJT | PNP silicon BJT | PNP silicon BJT | PNP silicon BJT |
| Collector-Emitter Voltage (VCEO) | -60 V | -60 V (same datasheet family) | Documented drop-in equivalent of 2SB1116A - matched VCEO | Documented drop-in equivalent of 2SB1116 - matched VCEO | Documented drop-in of 2SB1116 family |
| Continuous Collector Current (IC) | -1 A | -1 A | -1 A equivalent | -1 A equivalent | -1 A equivalent |
| Pinout (TO-92 flat side, leads down) | E - C - B | E - C - B (same) | E - C - B (same) | E - C - B (same) | E - C - B (same) |
| Documented as drop-in equivalent of 2SB1116A | n/a (this is the source part) | Same die family (NEC datasheet) | Yes (el-component.com explicit cross-reference) | Yes (el-component.com 'replacement and equivalent') | Yes (el-component.com cross-reference entry) |
Wichtigste Unterscheidungsmerkmale
- Single-source manufacturer traceability with documented NEC datasheet (vs. KSB1116A (Samsung))
- 'A' suffix variant explicitly documented in the NEC datasheet family (vs. 2SB1116 (non-A grade))
- Same TO-92 mechanical and pinout compatibility as Samsung KSB1116A for cross-vendor qualification (vs. KSB1116 (Samsung))
- Complementary-pair with NEC MMBT1616A (NPN) for matched-stage designs (vs. KSB1116A (Samsung))
Designhinweise
Use the standard TO-92 footprint with 2.54 mm (0.1 inch) lead pitch; the leads exit the package in the order E-C-B when the flat face is toward the viewer and leads point down. Provide a small copper pad (at least 1.5 mm^2) on each lead when continuous current approaches -1A or when the device dissipates more than ~300 mW, as the TO-92 package is not designed to carry large currents through narrow traces. Keep the part away from heat sources (other power transistors, voltage regulators) so the junction temperature stays within the absolute rating.
Do not confuse the TO-92 pinout of the 2SB1116A with the JEDEC TO-92 'B-C-E' or European 'C-B-E' conventions used by some NPN/PNP parts - the 2SB1116A uses the Japanese/Asian PNP standard of Emitter-Collector-Base (E-C-B) when viewing the flat side with leads down. Wiring the TO-92 backwards is a common cause of dead-on-arrival failures. Cross-check the mechanical drawing in the NEC datasheet before soldering the first prototype. Also verify that the negative supply rail never exceeds -60V at the collector, or the VCEO rating will be exceeded.
Estimated: at an ambient of 25 C with PD = 750 mW and the TO-92 free-air thermal resistance typically around 200 C/W (value [DATA_NEEDED] from device datasheet - consult the package section before finalizing the design), the junction temperature can rise to approximately 175 C, approaching the maximum. Derate PD by at least 50% (use <= ~375 mW continuous) for reliable long-term operation, or move to a TO-126 / TO-220 package (e.g., BD140, TIP32C) when sustained dissipation exceeds 500 mW. Always verify against the device datasheet's thermal-resistance curve rather than a rule of thumb.
Compliance-Informationen
Compliance data not present in the verified web search results; consult NEC's product environmental documentation directly for the latest RoHS / REACH / lead-free status. The 2SB1116A is a legacy NEC part originally designed before universal RoHS adoption.
