BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia
Teilenummer: BC817-40,215 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.16 | $1,60 |
| 100 | $0.12 | $12,00 |
| 500 | $0.09 | $45,00 |
| 1.000 | $0.07 | $70,00 |
| 3.000 | $0.05 | $150,00 |
BC817-40,215 Übersicht
A NPN BJT (bipolar junction transistor) is a three-terminal semiconductor device in which a small base current controls a much larger collector current, providing either signal amplification or saturated switching. BJTs sit within the broader category of discrete semiconductors, beneath transistors and ultimately the semiconductor taxonomy. The BC817 series occupies the general-purpose switching/amplification tier, optimized for low-voltage (<=45V) digital logic interfaces, driver stages, and analog small-signal paths. Its PNP complement in the Nexperia portfolio is the BC807-40 in the same SOT-23 footprint, allowing complementary push-pull designs on a shared PCB land pattern.
Key features include a 45V collector-emitter breakdown voltage (VCEO), 50V collector-base voltage (VCBO), 500mA continuous collector current (IC), 100MHz transition frequency (fT) at 10V/10mA, and a 250mW total power dissipation rating on a 25C reference footprint. The device is qualified to the JEDEC TO-236AB outline (JEDEC register), is fully RoHS compliant, and supports lead-free reflow profiles up to 260C peak per JEDEC J-STD-020. The SOT-23 package uses a standard JEDEC pinout (pin 1 base, pin 2 emitter, pin 3 collector) shared with thousands of industry SOT-23 transistors, which is critical for drop-in replacement flexibility.
Typical applications include MOSFET gate drivers for P-channel power switches, load-switch interface logic level translation between microcontrollers and 12V peripheral rails, general-purpose low-frequency amplification in consumer audio pre-stages, and DC-DC converter control-loop auxiliary switches. The 500mA collector current rating makes it suitable for relay coil drivers, solenoid pre-drivers, and small DC fan interfaces up to 200mA continuous.
When designing with this part, observe the 250mW power dissipation budget when calculating collector load power: PD = VCE(sat) * IC. Use a base resistor sized to deliver at least IC/10 base current for hard saturation (VCE(sat) <= 200mV typical), and route the emitter pin directly to a low-impedance ground plane for stable high-gain DC operation.
This page synthesizes distributor stock, drop-in alternatives drawn from cross-reference databases, and engineering notes not aggregated on any single manufacturer or distributor product page.
Drop-in-Alternativen für BC817-40,215 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BC817-40,215 (gleiche Bauform und Footprint) – abweichend in Package, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BC817-25,215
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BC817-16,215
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BC817,215
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BCW66H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BCX19
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BC817-40LT1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MMBTA05
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
KST05
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BC817-40,215 Grenzwerte & elektrische Eigenschaften
| Transistortyp | NPN Bipolar (BJT) |
| Gehäuse | SOT-23 (TO-236AB) |
| Montageart | Surface Mount |
| Kollektor-Emitter-Spannung (Vceo) | 45 V |
| Kollektor-Basis-Spannung (Vcbo) | 50 V |
| Emitter-Basis-Spannung (Vebo) | 5 V |
| Continuous Collector Current (IC) | 500 mA |
| Verlustleistung (Ptot) | 250 mW |
| Übergangsfrequenz (ft) | 100 MHz |
| DC Current Gain (hFE) - BC817-40 bin | 250 to 600 (at IC=100mA, VCE=1V) |
| Betriebstemperaturbereich | -65 C to +150 C (TJ) |
| JEDEC Package Standard | TO-236AB |
| Pin Configuration | Pin 1 Base / Pin 2 Emitter / Pin 3 Collector |
| RoHS Compliance | Compliant |
| Lead-Free Reflow | Yes (260 C peak per J-STD-020) |
BC817-40,215 Pin-Konfiguration
| Pin 1 | BASE — Base control input |
| Pin 2 | EMITTER — Emitter (typically grounded) |
| Pin 3 | COLLECTOR — Collector (load connection) |
Typische Anwendungen
BC817-40,215 ist geeignet für 7 Anwendungs: MOSFET Gate Driver (Low-Side), Logic Level Translation / Level Shifter, Relay and Solenoid Coil Driver, General-Purpose Small-Signal Amplifier, LED Driver and Indicator Circuit, DC-DC Converter Auxiliary Switch, Automotive Interior Body Electronics.
MOSFET Gate Driver (Low-Side)
The BC817-40,215 fits low-side N-channel MOSFET gate driver stages because its 500mA collector current sources/sinks gate charge in tens of nanoseconds, its 45V VCEO easily handles 12V and 24V bus rails with margin, and its 100MHz fT enables multi-MHz switching edges without bandwidth limiting. Compared to logic-level buffers, the discrete BJT costs less and survives fault transients that would destroy CMOS. Place a 1k to 10k base resistor between the microcontroller GPIO and pin 1 (base), emitter (pin 2) to ground, collector (pin 3) to the MOSFET gate; the BC817-40's hFE bin of 250-600 ensures IC = hFE * IB gives at least 250x base current gain for hard saturation.
Empfohlen
Logic Level Translation / Level Shifter
The BC817-40,215 is widely used as a single-transistor level shifter from 3.3V or 5V microcontroller GPIO to 12V or 24V peripheral rails. Its 45V VCEO comfortably exceeds 24V bus voltages, and its 500mA collector current drives optocouplers, relays, and indicator LEDs. Configure as an open-collector inverter: emitter (pin 2) to GND, base (pin 1) to the input GPIO through a base resistor, collector (pin 3) to the high-side rail through a pull-up resistor. The BC817-40's high hFE bin (250-600) minimizes the input base current required, which matters when the GPIO source is limited to a few mA.
Empfohlen
Relay and Solenoid Coil Driver
Small signal relays and solenoid coils drawing 100mA to 300mA can be driven directly by BC817-40,215 from a logic-level GPIO. The 500mA collector current rating exceeds typical 5V relay coil currents (around 70mA for a 720-ohm coil) by 7x, providing margin for inrush. Place a flyback diode (1N4148) across the relay coil to clamp the inductive kick, otherwise the breakdown voltage of the BC817 (45V VCEO) can be exceeded during switch-off. The BC817-40's high hFE bin reduces base drive current, so a single GPIO pin can saturate the transistor with less than 1mA of base current.
Empfohlen
General-Purpose Small-Signal Amplifier
The BC817-40,215 can be configured as a common-emitter or emitter-follower amplifier for audio pre-stages, sensor signal conditioning, and low-frequency (<=15kHz) instrumentation paths. Its 100MHz fT means the gain-bandwidth product easily supports 20kHz audio at moderate gains, and its hFE bin of 250-600 provides high voltage gain when configured with a collector load resistor. Bias the base via a divider from VCC, AC-couple the input through a capacitor, and AC-couple the output to the next stage. For low-noise sensor amplification, the BC817-40's high hFE minimizes base current noise contribution.
Empfohlen
LED Driver and Indicator Circuit
LEDs, indicator segments, and optocoupler inputs drawing up to 50mA continuous can be driven by BC817-40,215 in a saturated common-emitter switch. Its 500mA collector rating supports multiplexed LED displays where peak currents can exceed steady-state ratings. Use a base resistor of 4.7k to 10k from the GPIO to pin 1 (base) for standard 5V logic levels, and put the LED plus series resistor on the collector pin 3 to VCC. The BC817-40's high hFE bin allows the LED to be driven fully on with minimal base current, leaving GPIO fanout budget for other loads.
Empfohlen
DC-DC Converter Auxiliary Switch
Inside small DC-DC converters (buck, boost, or SEPIC), BC817-40,215 can serve as the auxiliary synchronous-rectifier driver, the soft-start bypass switch, or the P-channel MOSFET pre-driver. Its 45V VCEO covers 12V and 18V designs, while its 500mA collector current charges P-channel MOSFET gates in tens of nanoseconds. The 100MHz fT ensures the gate-drive waveform stays faithful at switching frequencies up to several hundred kHz, minimizing switching losses. Place it as an emitter follower (collector to VCC, base driven by PWM, emitter to P-channel gate) for non-inverting level translation.
Empfohlen
Automotive Interior Body Electronics
Inside automotive interior body modules (window lift switches, mirror adjusters, interior lighting), BC817-40,215 drives relays, LEDs, and H-bridge low-side switches from microcontroller GPIOs. Its 45V VCEO handles 12V automotive bus voltage (including 16V load-dump transients when paired with a TVS clamp) and its 500mA collector current switches typical body-electronics coil loads. Although the standard BC817-40,215 is not AEC-Q101 qualified, Nexperia offers automotive-grade variants in the same SOT-23 footprint with -Q suffix designations for production automotive designs.
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BC817-40,215 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BC817-25,215 | BC817-40LT1G | BCW66H | MMBTA05 |
|---|---|---|---|---|---|
| Package | SOT-23 (TO-236AB) | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same |
| Brand | Nexperia | Nexperia | onsemi | Nexperia | onsemi |
| VCEO (V) | 45 | 45 | 45 | 45 | 60 |
| Collector Current (mA) | 500 | 500 | 500 | 800 | 500 |
| hFE Bin (min) | 250 (bin 250-600) | 160 (bin 160-400) | 250 (same bin) | 250 (bin 250-630) | 50 |
| Transition Frequency fT (MHz) | 100 | 100 | 100 | 100 | 100 |
| Power Dissipation (mW) | 250 | 250 | 225 | 330 | 225 |
| RoHS / REACH | Compliant / Compliant | Compliant / Compliant | Compliant / Compliant | Compliant / Compliant | Compliant / Compliant |
Wichtigste Unterscheidungsmerkmale
- Highest-gain hFE bin in BC817 family (vs. BC817-25,215)
- Tighter hFE bin spec (250-600) than cross-brand equivalents (vs. BCX19)
- Higher collector current capability in same SOT-23 (vs. BCW66H)
- Automotive-credible heritage from former NXP/Nexperia portfolio (vs. BC817-40LT1G)
Designhinweise
Estimated: do not drive the BC817-40,215 base directly from a 5V GPIO without a base resistor. With hFE as high as 600, even 1mA of base current would attempt to deliver 600mA of collector current, which exceeds the 500mA IC rating. A 4.7k base resistor limits base current to about 1mA and keeps the transistor safely saturated at 500mA loads. Also, do not exceed VCEO=45V - for 24V rail designs, choose the MMBTA05 family instead (VCEO=60V).
The 250mW power dissipation is referenced to a JEDEC-standard 1in2 4-layer test board. Estimated: at 150C junction temperature the dissipation budget is zero, so above 25C ambient you must derate by 2.5mW per degree C. For a 70C ambient (industrial) the dissipation budget drops to about 200mW, and the saturated power VCE(sat)*IC must be checked. A small copper pour (>=50mm2) under pin 3 (collector) lowers thermal resistance noticeably.
SOT-23 land pattern is industry-standard JEDEC SO-23: 0.95mm pitch, 0.6mm pad width. Keep base and collector traces short and direct to minimize parasitic inductance in switching applications. Place the base resistor within 4mm of pin 1 to limit high-frequency oscillation in fast-switching designs. For high-current loads, route the collector pad to a copper pour on the top or bottom layer for thermal relief; the SOT-23's exposed tab is pin 3 (collector).
When using BC817-40,215 as a relay or solenoid driver, place the flyback diode (1N4148 or equivalent) physically adjacent to the relay coil terminals, not next to the transistor. This minimizes the area of the inductive kick loop and reduces radiated EMI. For switching >100mA loads, also add a small RC snubber (100-ohm + 1nF) across the collector-emitter to suppress voltage spikes that could exceed the 45V VCEO during inductive switch-off.
Compliance-Informationen
RoHS compliant per Nexperia product declaration. Lead-free matte-tin plating supports 260C peak reflow per JEDEC J-STD-020. Not AEC-Q100/Q101 qualified - for automotive production designs, choose a Q-suffix automotive-graded variant. JEDEC TO-236AB package standard.
