CL31B333KHHNFNE - 33nF 630V X7R 1206 MLCC | Samsung Electro-Mechanics
Teilenummer: CL31B333KHHNFNE ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.16 | $1,60 |
| 100 | $0.13 | $13,00 |
| 500 | $0.1 | $50,00 |
| 1.000 | $0.08 | $80,00 |
| 4.000 | $0.07 | $280,00 |
CL31B333KHHNFNE Übersicht
What is a multilayer ceramic capacitor (MLCC)? An MLCC is a passive surface-mount component made of alternating layers of ceramic dielectric and metal electrodes, sintered into a single monolithic body. MLCCs sit in the broader taxonomy: passive component -> capacitor -> ceramic capacitor -> MLCC -> Class II (X7R) ceramic capacitor. X7R is an EIA dielectric designation indicating ±15% capacitance variation over the -55C to +125C operating range. Compared to Class I dielectrics (C0G/NP0), X7R offers much higher volumetric efficiency (more µF per mm³) at the cost of less capacitance stability versus temperature, voltage, and frequency.
Key features include a 630V DC rated working voltage (suitable for 250-400V AC rectified rails), X7R temperature characteristic (EIA standard), ±10% capacitance tolerance, and Ni/Sn (nickel-tin) termination compatible with lead-free reflow soldering. The 1206 case size provides a good trade-off between physical size and voltage-withstand margin compared to smaller 0805 or 0402 footprints.
Technical depth: The CL31B333KHHNFNE uses a high-K barium-titanate-based ceramic dielectric engineered for high-voltage applications. The high capacitance per volume is achieved through many thin dielectric layers stacked in parallel. Compared to Class I C0G capacitors, X7R parts exhibit significant capacitance loss under DC bias (typically 20-40% drop near rated voltage) and aging loss over time, so designers should derate when targeting critical timing or filter applications.
Typical applications include snubber and DC-link capacitors in switch-mode power supplies, EMI suppression across hot-side AC mains, gate-driver bootstrap circuits in motor drives and IGBT half-bridges, and high-voltage coupling/decoupling in industrial control and renewable energy inverters.
When designing with this device, always observe the 630V working voltage as the maximum continuous DC rating, and add 30-50% safety margin for transient surge handling. Verify that the application's expected inrush and dv/dt transients do not exceed the part's pulse-withstand capability.
Drop-in-Alternativen für CL31B333KHHNFNE – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
CL31B333KDFNNNE
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CL31B333KFESNNE
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GRM31BR72J333KW01
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CGA5H2X7R2J333K125AA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CC1206KKX7RYBB333
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VJ1206Y333KXJCBC
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CL31B333KHHNFNE Grenzwerte & elektrische Eigenschaften
| Capacitance | 0.033 µF (33 nF) |
| Capacitance Tolerance | ±10% |
| Rated Voltage (DC) | 630 V |
| Dielectric | X7R (EIA Class II) |
| Package / Case Size | 1206 (3216 metric) |
| Length | 3.2 mm |
| Width | 1.6 mm |
| Montageart | Surface Mount |
| Termination | Ni/Sn (nickel-tin, lead-free) |
| Betriebstemperatur | -55C to +125C |
| Temperature Coefficient | ±15% (X7R) |
| RoHS-Status | Compliant |
| MSL-Level | 1 |
| Packaging | Tape & Reel (E suffix = 7"/178mm reel) |
| Series | CL31B (Samsung high-voltage MLCC) |
CL31B333KHHNFNE 1206 (3216 metric) Pinbelegungsleitfaden
Pinbelegung für CL31B333KHHNFNE (1206 (3216 metric)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für CL31B333KHHNFNE.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
CL31B333KHHNFNE ist geeignet für 6 Anwendungs: Snubber Capacitor in Switch-Mode Power Supplies, DC-Link Decoupling in Motor Drives, Bootstrap Capacitor in Gate Drivers, EMI Suppression in Industrial Power Supplies, Solar Inverter Auxiliary Power, Automotive 48V Mild-Hybrid Bus Decoupling.
Snubber Capacitor in Switch-Mode Power Supplies
The CL31B333KHHNFNE is well suited as a snubber capacitor across switching transistors or transformer primaries in SMPS designs, where the 630V DC working rating handles the high-voltage ringing across MOSFET drain-source during turn-off. The 33 nF capacitance and X7R dielectric balance the RC time constant needed to damp parasitic oscillations without adding excessive dead-time losses. With 1206 case, it provides sufficient thermal mass to survive high dv/dt transients and dissipates ringing energy without derating.
Empfohlen
DC-Link Decoupling in Motor Drives
In 400V-class three-phase motor drives and servo amplifiers, the CL31B333KHHNFNE serves as a high-voltage bypass capacitor on the DC-link rail, filtering switching noise from the IGBT/PFC stage. The 630V rating provides at least 50% margin above 400V rectified bus voltage and handles regenerative braking voltage spikes up to 550V. The X7R dielectric ensures stable capacitance from cold start (-40C) to full-load operating temperature (105C), and the 1206 footprint enables dense placement near each inverter module.
Empfohlen
Bootstrap Capacitor in Gate Drivers
The CL31B333KHHNFNE is a standard value for the bootstrap capacitor in high-side gate driver circuits that drive N-channel MOSFETs or IGBTs in half-bridge configurations. The 33 nF value charges through the bootstrap diode during the low-side ON time, providing gate charge to the high-side switch during the next cycle. The 630V rating exceeds typical 400V bus designs and withstands negative transients at the source of the high-side switch.
Empfohlen
EMI Suppression in Industrial Power Supplies
The CL31B333KHHNFNE is used in EMI filter networks on the DC side of offline SMPS, particularly in 230V AC input designs where bulk and decoupling capacitance across the rectifier output suppresses common-mode noise. The 630V rating provides margin for 400V DC bus, while the X7R dielectric maintains filtering performance over industrial -40C to +85C temperature range. Combined with common-mode chokes, it helps designs meet EN 55011/CISPR 11 Class B EMI limits.
Empfohlen
Solar Inverter Auxiliary Power
In photovoltaic solar inverters, the CL31B333KHHNFNE handles high-voltage filtering on auxiliary power rails derived from the 600V-1000V DC string. The 630V rated voltage withstands typical 400V auxiliary bus conditions in string inverters, and the X7R dielectric maintains capacitance stability under continuous solar irradiance-driven thermal cycling from -25C to +85C. Its 1206 footprint allows placement near isolated gate drivers on the high-voltage side.
Empfohlen
Automotive 48V Mild-Hybrid Bus Decoupling
In 48V mild-hybrid automotive systems, the CL31B333KHHNFNE provides localized high-voltage decoupling on DC-DC converter outputs and battery management boards. Although rated for 630V, it is commonly specified for transient suppression where load-dump pulses can momentarily exceed 80V on the 48V rail. Combined with TDK's AEC-Q200 automotive-grade equivalents (e.g. CGA5H2X7R2J333K125AA), it serves safety-critical auxiliary power domains.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für CL31B333KHHNFNE – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | CL31B333KDFNNNE | GRM31BR72J333KW01 | CGA5H2X7R2J333K125AA | CC1206KKX7RYBB333 |
|---|---|---|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electro-Mechanics | Murata | TDK | YAGEO |
| Package | 1206 (3216) | 1206 (3216) - same | 1206 (3216) - same | 1206 (3216) - same | 1206 (3216) - same |
| Capacitance | 33 nF | 33 nF | 33 nF | 33 nF | 33 nF |
| Capacitance Tolerance | ±10% | ±10% | ±10% | ±10% | ±10% |
| Rated Voltage (DC) | 630 V | 200 V | 630 V | 630 V | 250 V |
| Dielectric | X7R | X7R | X7R | X7R | X7R |
| Operating Temperature | -55C to +125C | -55C to +125C | -55C to +125C | -55C to +125C | -55C to +125C |
| Automotive Grade (AEC-Q200) | Not qualified | Not qualified | Not qualified | AEC-Q200 qualified | Not qualified |
Wichtigste Unterscheidungsmerkmale
- Same-package same-brand alternative at lower voltage (vs. CL31B333KDFNNNE)
- Cross-brand drop-in equivalent from industry leader (vs. GRM31BR72J333KW01 (Murata))
- AEC-Q200 automotive-grade option (vs. CGA5H2X7R2J333K125AA (TDK))
Designhinweise
X7R capacitors exhibit significant DC-bias derating - capacitance can drop 20-40% near rated voltage. For accurate timing or filter designs using 33 nF at 630V, measure actual capacitance at operating bias, or select a C0G/NP0 dielectric for stability-critical applications. Per Samsung datasheet, the actual capacitance at 400V DC may be only 20-25 nF.
Use the standard EIA 1206 land pattern: 1.5 mm × 2.0 mm pads with 0.5 mm gap. Place the capacitor close to the IC or switching node to minimize parasitic inductance (target <5 mm trace). For high-voltage designs, ensure adequate creepage distance (≥3 mm) between the capacitor pads and any adjacent low-voltage traces or copper pours.
Avoid placing the CL31B333KHHNFNE directly under tall components that can flex the PCB during assembly, as flex cracking is a known failure mode for ceramic capacitors. Use PCB stiffeners for mainframes larger than 150 mm. The 1206 case is more robust against flex cracking than 0805 or 0402 sizes, but still susceptible to excessive board strain.
Compliance-Informationen
RoHS and REACH compliant per Samsung Electro-Mechanics declaration. Ni/Sn lead-free terminations compatible with 260C reflow per JEDEC J-STD-020. AEC-Q200 qualification not available - choose TDK CGA5H2X7R2J333K125AA for automotive AEC-Q200 applications.
