ES1D-13-F - 200V 1A Super-Fast Rectifier Diode | Diodes Inc
Teilenummer: ES1D-13-F ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.14 | $1,40 |
| 100 | $0.09 | $9,00 |
| 500 | $0.07 | $35,00 |
| 1.000 | $0.05 | $50,00 |
| 5.000 | $0.04 | $200,00 |
ES1D-13-F Übersicht
A rectifier diode is a semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Super-fast recovery rectifiers are a specialized subset optimized for high-frequency switching applications where standard rectifier diodes would suffer excessive switching losses. The ES1D sits within the discrete semiconductor > diodes > rectifier > super-fast recovery hierarchy, bridging power management ICs and passives in modern switch-mode designs.
Key specifications include a peak repetitive reverse voltage (VRRM) of 200V, average rectified forward current (IF(AV)) of 1.0A, forward voltage (VFM) of 0.92V at 1A and 0.90V at 0.6A, peak reverse current of 5.0µA at 25°C (200µA at 125°C), and total capacitance that supports high-frequency operation. The molded plastic case with solderable matte tin-plated copper lead-frame terminals conforms to MIL-STD-202 mechanical and solderability standards. The SMA footprint is the industry-standard surface-mount rectifier outline, enabling direct drop-in substitution on most PCB land patterns.
The ES1D-13-F leverages a glass-passivated die with a low-leakage, high-speed junction, providing 25ns reverse recovery and excellent thermal stability across the -55°C to +150°C operating junction range. With a thermal resistance of approximately 25°C/W on a standard JEDEC test board, the device sustains full 1A operation in moderate ambient conditions without external heatsinking.
Typical applications include secondary rectification in AC-DC adapters, freewheeling diodes across switching converters, snubber and clamp circuits, polarity protection in DC distribution, and high-frequency rectification in telecom and industrial SMPS designs. The 25ns recovery time is particularly advantageous at 100kHz+ switching frequencies where slower diodes would dissipate substantial switching power.
When designing with the ES1D-13-F, ensure the PCB land pattern conforms to the JEDEC DO-214AC (SMA) footprint and respect the 200V reverse-voltage derating guidelines for reliable operation. For continuous 1A loads, verify junction temperature stays below 150°C by calculating power dissipation (IF × VFM) against the system thermal resistance budget.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für ES1D-13-F – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ES1DE-TP
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
US1D-13-F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
S1D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ES1DLHRVG
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STTH1R02
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ES1D-13-F Grenzwerte & elektrische Eigenschaften
| Diode Type | Super-Fast Recovery Rectifier |
| Gehäuse | SMA (DO-214AC) |
| Peak Repetitive Reverse Voltage (VRRM) | 200 V |
| Average Rectified Forward Current (IF(AV)) | 1.0 A |
| Forward Voltage Drop (VFM) at IF=1.0A | 0.92 V |
| Forward Voltage Drop (VFM) at IF=0.6A | 0.90 V |
| Reverse Recovery Time (tRR) | 25 ns |
| Peak Reverse Current at TA=25°C (IRM) | 5.0 µA |
| Peak Reverse Current at TA=125°C (IRM) | 200 µA |
| Betriebs-Sperrschichttemperaturbereich | -55°C to +150°C |
| Case Material | Molded plastic (UL 94V-0) |
| Terminal Finish | Matte tin-plated copper (solderable per MIL-STD-202) |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| Solder Conditions | 260°C / 10s |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Polarity Indication | Cathode band |
ES1D-13-F Pin-Konfiguration
| Pin 1 | Anode — Positive terminal (forward current flows in here) |
| Pin 2 | Cathode — Negative terminal, identified by cathode band on package body |
Typische Anwendungen
ES1D-13-F ist geeignet für 6 Anwendungs: Secondary Rectification in AC-DC Adapters, Freewheeling Diode in Switching Converters, Snubber and Clamp Circuits, Polarity Protection in DC Distribution, High-Frequency Rectification in Telecom SMPS, Industrial Control and Automation.
Secondary Rectification in AC-DC Adapters
The ES1D-13-F is well suited to secondary-side rectification in AC-DC adapter and charger designs where its 200V reverse voltage handles rectified 120V-160V bus rails with adequate derating. Its 25ns reverse recovery time and 1A average forward current rating cover typical 5W-30W adapter power levels without thermal concerns. Placed after the transformer secondary winding in a full-wave or center-tapped bridge, the diode's 0.92V forward drop at 1A minimizes conduction loss compared to 1N400x-class parts. Engineers should verify SMA land-pattern conformance to JEDEC DO-214AC and provide adequate copper thermal relief for continuous 1A operation.
Empfohlen
Freewheeling Diode in Switching Converters
The ES1D-13-F serves as a freewheeling (catch) diode across switching converter inductors and relay coils, where its 25ns tRR prevents the slow-recovery-induced voltage spikes that would otherwise damage switching transistors. In buck, boost, and flyback topologies operating at 100kHz-500kHz, the diode's reverse recovery losses are minimal compared to standard-recovery alternatives. The 1A current rating covers most low-to-medium power converter designs, while the 200V reverse rating tolerates inductive kickback in 24V-48V bus applications. Designers should pair the diode with an appropriate switching transistor (e.g., MOSFET) and verify junction temperature stays below 150°C under worst-case duty cycle.
Empfohlen
Snubber and Clamp Circuits
The ES1D-13-F is frequently deployed in RC snubber and TVS-clamp networks across switching power supply primary and secondary sides to absorb transient voltage spikes from inductive parasitics. Its fast 25ns recovery ensures the clamp diode resets quickly between switching cycles, preventing thermal runaway in continuous-clamp applications. The 200V rating is well-matched to 120V-160V rectified bus environments and 48V telecom rails. For clamp circuits, the diode is typically paired with a small power resistor and a film capacitor; the SMA package's compact 2-pin outline simplifies PCB layout near transformer windings.
Empfohlen
Polarity Protection in DC Distribution
The ES1D-13-F provides reverse-polarity protection at DC input connectors, where it blocks reverse-bias current flow that could damage downstream electronics. The 0.92V forward drop is acceptable for most 12V-48V distribution rails where a series Schottky would cause excessive loss, and the 1A rating covers most distribution bus loads. The 200V reverse standoff rating tolerates inductive transients on long cable runs. Engineers commonly combine this diode with an input fuse for overcurrent protection; the SMA package drops into standard rectifier land patterns on most protection modules.
Empfohlen
High-Frequency Rectification in Telecom SMPS
The ES1D-13-F's 25ns reverse recovery time makes it a strong candidate for telecom SMPS rectifier stages operating at 100kHz-500kHz switching frequencies, where slower diodes would incur prohibitive switching losses. Its 200V reverse voltage rating handles the rectified 48V telecom bus with comfortable derating margin, and the 1A average current supports typical 30W-60W line-card power modules. The SMA package's compact footprint enables high-density rectifier placement on telecom backplane PCBs, while the glass-passivated die ensures long-term reliability in always-on telecom environments.
Empfohlen
Industrial Control and Automation
In industrial PLC, motor drive, and process-control designs, the ES1D-13-F serves as a reliable rectification element in 24V-48V DC bus interfaces, sensor excitation supplies, and isolated I/O modules. Its wide -55°C to +150°C operating junction temperature range handles industrial ambient conditions, while the 200V rating tolerates inductive kickback from solenoids and small motors. The UL 94V-0 molded plastic case meets industrial flammability standards. For PLC digital output modules driving relays, the diode provides freewheeling protection; for analog input modules, it serves in precision rectifier configurations preceding ADC sampling.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ES1D-13-F – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ES1DE-TP | US1D-13-F | S1D | ES1DLHRVG | STTH1R02 |
|---|---|---|---|---|---|---|
| Package | SMA (DO-214AC) | SMA (DO-214AC) | SMA (DO-214AC) | SMA (DO-214AC) | Sub SMA (DO-219AB) | SMA (DO-214AC) |
| Brand | Diodes Incorporated | Micro Commercial Components | Diodes Incorporated | Diodes Incorporated | Taiwan Semiconductor Corporation | STMicroelectronics |
| Peak Reverse Voltage (VRRM) | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Average Forward Current (IF(AV)) | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A |
| Diode Type | Super-Fast Recovery Rectifier | Super-Fast Recovery Rectifier | Standard Recovery Rectifier | Standard Recovery Rectifier | Super-Fast Recovery Rectifier | Ultrafast Rectifier |
| RoHS Status | Compliant | Compliant (per Xecor) | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- 25ns super-fast reverse recovery vs slower alternatives (vs. US1D-13-F)
- Lower tRR than ES1DE-TP alternative (vs. ES1DE-TP (Micro Commercial Components))
- Industry-standard SMA footprint vs sub-SMA (vs. ES1DLHRVG (Taiwan Semiconductor))
Designhinweise
Estimated: At IF=1A continuous and VFM=0.92V, power dissipation is ~0.92W. With a typical SMA package thermal resistance of ~25°C/W on a JEDEC test board, junction temperature rise above ambient is approximately 23°C. For operation at TA=85°C ambient, TJ will reach ~108°C, well within the 150°C maximum. For TA>100°C or continuous operation above 1A, additional copper thermal relief (≥100mm² pad area) is required to maintain reliability.
The ES1D-13-F requires a JEDEC-conformant SMA (DO-214AC) land pattern with recommended pad dimensions of approximately 2.5mm × 1.5mm per pad with 1.0mm spacing. Both anode and cathode pads should be of equal size for balanced thermal distribution. The cathode band on the package body must align with the silkscreen polarity marker. Reflow profiles should follow JEDEC J-STD-020 with peak temperature not exceeding 260°C for 10 seconds maximum.
Common pitfalls when using the ES1D-13-F include: (1) applying reverse voltage above 200V which exceeds VRRM and risks avalanche breakdown; (2) using standard-recovery alternatives (e.g., US1D-13-F) in high-frequency switching positions where the slower tRR causes excessive switching losses and EMI; (3) ignoring DC reverse leakage doubling per 10°C above 25°C - at 125°C the IRM is 200µA which must be accounted for in low-current precision circuits. Always verify peak inverse voltage (PIV) stays below 160V (80% derating) for reliable long-term operation.
Compliance-Informationen
RoHS and REACH compliance per Diodes Incorporated product page. Halogen-free per manufacturer datasheet. Not AEC-Q100 qualified - this part targets commercial/industrial applications; automotive designs should consult Diodes' dedicated automotive-grade rectifier family.
