ESD1P0RFW-H6327 - RF ESD Protection Diode, 1pF, ±20kV | Infineon
Teilenummer: ESD1P0RFW-H6327 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.24 | $0,24 |
| 10 | $0.21 | $2,10 |
| 100 | $0.18 | $18,00 |
| 500 | $0.15 | $75,00 |
| 1.000 | $0.13 | $130,00 |
ESD1P0RFW-H6327 Übersicht
An ESD protection diode is a specialized transient voltage suppressor (TVS) designed to clamp fast electrostatic discharge events to safe levels, preventing damage to downstream ICs. In the broader component taxonomy, the ESD1P0RFW-H6327 belongs to TVS diodes -> ESD protection devices -> circuit protection -> discrete semiconductors. Unlike general-purpose TVS diodes, RF-class ESD devices are characterized by extremely low junction capacitance (typically <2 pF) so they do not attenuate the high-frequency content of RF signals, GPS L1/L2, HDMI TMDS, or 2.4 GHz / 5 GHz Wi-Fi paths.
Key features include an ultra-low 1 pF typical line capacitance, ±20 kV ESD contact rating, 10 A peak surge handling (8/20 µs), a 70 V maximum reverse standoff voltage, and an integrated silicon-based TVS structure in a compact PG-SOT323 footprint. The device operates across the industrial -55 °C to +150 °C temperature range and is rated for lead-free reflow profiles up to 260 °C peak.
The silicon-based TVS structure uses a steering-diode/fast-clamp topology where the diode forward biases during negative ESD events and avalanches during positive transients, shunting energy to ground with sub-nanosecond response. The 1 pF capacitance is achieved by minimizing the die junction area while maintaining the 10 A surge capability, a trade-off that yields adequate power rating for portable RF equipment without introducing measurable insertion loss below 3 GHz.
Typical applications include GPS antenna ESD protection, HDMI TMDS lines, 10/100/1000 Ethernet ports, USB 2.0 data lines, mobile phone RF modules, and other ultra-high-speed data interfaces where capacitive loading must be minimized to preserve signal integrity.
When designing with this diode, place it as close as possible to the external connector with a short, low-inductance ground return to the chassis or PCB ground plane. Do not place series ferrite beads ahead of the ESD diode because residual inductance at the diode's cathode limits clamping effectiveness for sub-nanosecond ESD events.
This page synthesizes distributor pricing, drop-in alternates, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für ESD1P0RFW-H6327 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit ESD1P0RFW-H6327 (gleiche Bauform und Footprint) – abweichend in Clamping Voltage, EFT Immunity, ESD Contact Discharge, Packaging, Surge Immunity.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ESD1P0RFWH6327XTSA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
PESD1RFW
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ESD8704
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ESD5V0S1B-N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ESD1P0RFW-H6327 Grenzwerte & elektrische Eigenschaften
| Number of Channels | 1 |
| ESD Contact Discharge | ±20 kV (per IEC 61000-4-2) |
| Peak Pulse Current (8/20 µs) | 10 A |
| Typical Line Capacitance | 1 pF |
| Reverse Standoff Voltage (Vrwm) | 70 V |
| Clamping Voltage | 15 V (at 10 A, 8/20 µs) |
| Reverse Leakage Current | 100 nA |
| EFT Immunity | Compliant IEC 61000-4-4 |
| Surge Immunity | Compliant IEC 61000-4-5 (8/20 µs) |
| Polarity | Unidirectional |
| Betriebstemperaturbereich | -55 °C to +150 °C |
| Gehäuse / Bauform | PG-SOT323 (SC-70, 3-pin) |
| Montageart | Surface Mount |
| Packaging | Tape & Reel (TR) |
| RoHS / Lead Free | Compliant (lead-free per JLCPCB listing) |
ESD1P0RFW-H6327 Pin-Konfiguration
| Pin 1 | Anode — Signal line (connect to protected conductor) |
| Pin 2 | NC — Not connected (per datasheet, drain pad) |
| Pin 3 | Cathode — Ground / chassis ground return |
Typische Anwendungen
ESD1P0RFW-H6327 ist geeignet für 6 Anwendungs: GPS Antenna ESD Protection, HDMI TMDS Line Protection, USB 2.0 Data Line Protection, 10/100/1000 Ethernet Port Protection, Mobile Phone RF Module Protection, Industrial Sensor / IoT Device ESD Protection.
GPS Antenna ESD Protection
The ESD1P0RFW-H6327 is well suited for GPS L1 (1.575 GHz) and L2 (1.227 GHz) antenna feed lines where its 1 pF typical capacitance introduces less than 0.2 dB of insertion loss at GNSS frequencies, preserving carrier-to-noise ratio for position-fixing accuracy. Placed between the antenna pad and the GNSS receiver IC (e.g., u-blox or Broadcom BCM47758), it clamps ±20 kV IEC 61000-4-2 ESD events to a 15 V/10 A pulse that the receiver's internal protection can absorb. Compared with general-purpose TVS diodes that have 100 pF+ capacitance, the ESD1P0RFW-H6327 maintains link budget critical for sub-meter GPS accuracy in outdoor tracking, automotive telematics, and drone navigation systems. Operating temperature of -55 °C to +150 °C covers automotive under-hood and outdoor deployments.
Empfohlen
HDMI TMDS Line Protection
The ESD1P0RFW-H6327 protects each of the three HDMI TMDS data channels (running up to 6 Gbps for HDMI 2.0 or 12 Gbps for HDMI 2.1) with minimal signal degradation thanks to its 1 pF capacitance and sub-1 ns response time. Placed between the HDMI receptacle and the receiver's TMDS input, it clamps ±20 kV IEC 61000-4-2 contact discharge from user-contact hot-plugging events to a safe 15 V level before the host SoC damage threshold. Compared with lower-capacitance parts that lack adequate surge capability, the 10 A peak pulse current provides margin against IEC 61000-4-5 surge bursts. Compact PG-SOT323 footprint (2.0 x 1.25 mm) consumes negligible PCB real estate behind the HDMI connector, and the unidirectional polarity matches TMDS line orientation.
Empfohlen
USB 2.0 Data Line Protection
The ESD1P0RFW-H6327 protects USB 2.0 D+ and D- data lines (480 Mbps) by clamping ±20 kV IEC 61000-4-2 contact discharge to 15 V while contributing less than 0.3 dB insertion loss over the USB cable frequency band, preserving the eye diagram margin mandated by USB IF compliance. Placed between the USB Type-A/Type-C receptacle pins and the host controller's DP/DM pins, it provides margin beyond the 8 kV minimum requirement. The unidirectional topology suits full- and low-speed USB where the data polarity is known, and the 70 V reverse standoff tolerates the VBUS (+5 V) under fault conditions. The PG-SOT323 footprint is small enough to fit behind the USB receptacle mounting plane on smartphone, tablet, and laptop PCB layouts.
Empfohlen
10/100/1000 Ethernet Port Protection
The ESD1P0RFW-H6327 protects the differential pairs of 10BASE-T, 100BASE-TX, and 1000BASE-T Ethernet ports from cable-discharge ESD events, where Cat5/Cat6 cable insertion can deliver ±15 kV surges to the PHY's magnetics interface. Placed between the RJ-45 jack and the Ethernet PHY's MDI pins, its 1 pF capacitance maintains the 100 ohm differential return loss budget required by IEEE 802.3 for 1 Gbps operation. The 10 A peak pulse current (8/20 µs) provides margin against cable-induced transients in industrial Ethernet deployments. Compact SOT-323 package allows placement adjacent to each of the 4 MDI pairs without consuming substantial real estate inside the RJ-45 magnetic module region.
Empfohlen
Mobile Phone RF Module Protection
Mobile phone RF modules (4G LTE, 5G NR, Wi-Fi, Bluetooth) operate above 700 MHz where capacitive loading severely degrades signal integrity; the ESD1P0RFW-H6327's 1 pF capacitance introduces <0.1 dB insertion loss even at the 5 GHz UNII-3 band. Placed immediately at the antenna switch module (ASM) input pin or near the front-end module (FEM) RF input, it clamps ±20 kV ESD events from antenna contact and human-body discharge scenarios to a safe 15 V clamp, preventing damage to the costly multimode multiband power amplifier (MMMB PA). The -55 °C to +150 °C operating range supports thermal stress under continuous PA output power, and the small PG-SOT323 footprint keeps board area utilization minimal in smartphone RF sub-systems.
Empfohlen
Industrial Sensor / IoT Device ESD Protection
Industrial and IoT sensors (temperature, pressure, gas, current, capacitive proximity) increasingly connect via CAN, RS-485, or 4-20 mA analog interfaces where IEC 61000-4-2 ESD events from handling and mounting can destroy the analog front-end. The ESD1P0RFW-H6327 protects analog signal lines up to ±20 kV contact discharge while introducing only 1 pF, which is negligible below 50 kHz control signals but adequate for the 250 kbps CAN-FD data rate. Placed on each analog input pin at the edge of the PCB where wiring enters the enclosure, it routes transient energy to chassis ground via the shortest possible trace. The 70 V reverse standoff tolerates 24 V industrial common-mode ranges and the 150 °C upper temperature limit supports deployment in factory automation enclosures.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ESD1P0RFW-H6327 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ESD1P0RFWH6327XTSA1 | PESD1RFW | ESD8704 | ESD5V0S1B-N |
|---|---|---|---|---|---|
| Package | PG-SOT323 (SC-70) | PG-SOT323 (SC-70) - same | PG-SOT323 (SC-70) - same | PG-SOT323 (SC-70) - same | PG-SOT323 (SC-70) - same |
| Brand | Infineon | Infineon | NXP Semiconductors | onsemi | Infineon |
| Number of Channels | 1 | 1 | 1 | 1 | 1 |
| Typical Capacitance | 1 pF | 1 pF | 1 pF | 1 pF | 1 pF |
| ESD Contact Rating (IEC 61000-4-2) | ±20 kV | ±20 kV | ±15 kV | ±18 kV | ±15 kV |
| Reverse Standoff Voltage (Vrwm) | 70 V | 70 V | 70 V | 70 V | 5 V (much lower) |
| Peak Pulse Current (8/20 µs) | 10 A | 10 A | 8 A (-20%) | 9 A (-10%) | 12 A (+20%) |
| Clamping Voltage (at Ipp) | 15 V | 15 V | 16 V | 14 V | 9 V (lower due to lower Vrwm) |
| Automotive Qualification | No | Yes (AEC-Q100, automotive grade) | No | No | No |
Wichtigste Unterscheidungsmerkmale
- Higher IEC 61000-4-2 contact ESD rating than cross-brand equivalents (vs. PESD1RFW (NXP Semiconductors))
- Higher reverse standoff voltage than competing same-package parts (vs. ESD5V0S1B-N (Infineon))
- Compactest footprint of any Infineon RF-class ESD diode (vs. ESD1P0RFS (Infineon, 2-channel SOT-363))
Designhinweise
Placement: Position the ESD1P0RFW-H6327 as close as physically possible to the external connector (RJ-45, USB, HDMI receptacle, antenna pad) with the cathode (Pin 3) connected to a short, low-inductance chassis-ground or PCB ground-plane return trace. Trace inductance from cathode to ground is the dominant factor limiting sub-nanosecond ESD clamping effectiveness: every 1 nH of inductance adds roughly 1 V per kV/µs of ESD edge rate (10 kV/1 ns edge = ~10 A peak current, raising cathode-to-ground voltage by 10 V per nanohenry of trace parasitic). Keep the cathode trace under 5 mm when the ground plane is on a different layer, or place a stitching via directly at the cathode pad.
RF trace routing: When placing the ESD diode on a 50 ohm transmission line (e.g., GPS antenna feed), keep the trace widths identical before and after the diode to preserve characteristic impedance. Avoid placing ferrites or inductors in series between the connector and the ESD diode - residual series impedance reduces the diode's ability to absorb fast ESD edges. Use a ground-co-planar waveguide or microstrip topology that maintains 50 ohm even with the SOT-323 land pattern discontinuity. For differential lines (USB, HDMI TMDS, Ethernet), place one diode per line and keep the layout symmetrical for matched differential return loss.
Polarity orientation: ESD1P0RFW-H6327 is unidirectional. Verify the cathode (Pin 3) connects to ground and the anode (Pin 1) connects to the protected signal line. On AC-coupled RF lines (with DC blocking capacitors on both ends), the diode polarity must be re-considered based on the offset bias; consult the datasheet's bias-circuits appendix. Pin 2 is not connected internally; do not use it for signal routing or as a no-connect reflow pad unless explicitly allowed by the manufacturer's recommended land pattern. Do not interchange this part with bidirectional TVS arrays in the same footprint without re-reviewing the line orientation and DC bias assumptions.
Estimated: At peak surge current 10 A (8/20 µs waveform) with a clamping voltage of 15 V, the pulse power dissipation is approximately 150 W peak for ~20 µs (single pulse). Integrated over the full 8/20 waveform and assuming one event per second, the average power dissipation in steady state is under 5 mW, well within the SOT-323 thermal limit (theta_JA ~ 250 C/W yields <1.25 °C temperature rise). Multiple sequential ESD events can accumulate thermal energy, but a 100 ms cooldown between events is sufficient for full thermal recovery. Thermal design is therefore rarely a constraint for ESD1P0RFW-H6327 in normal use cases.
Compliance-Informationen
RoHS compliant and lead-free per Infineon product page and JLCPCB listing. Base part ESD1P0RFW-H6327 is NOT AEC-Q100 qualified; choose ESD1P0RFWH6327XTSA1 (same Infineon die, AEC-Q100 variant) for automotive qualification. Halogen-free status: [DATA_NEEDED] - not stated in the source data.
