FESB16DT-E3/81 - 200V 16A Ultrafast Rectifier TO-263AB | Vishay
Teilenummer: FESB16DT-E3/81 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.65 | $650,00 |
| 3.000 | $0.55 | $1.650,00 |
FESB16DT-E3/81 Übersicht
Key features include a 35 ns reverse recovery time, low switching losses, high forward surge capability, and a forward voltage of 975 mV at full 16 A load. The glass-passivated die construction ensures long-term stability against humidity and contaminants, while the J-STD-020 MSL-1 rating simplifies board-level handling.
The FESB16DT-E3/81 belongs to the ultrafast rectifier family, a subset of discrete power diodes engineered for high-frequency operation. Within the broader component taxonomy, ultrafast rectifiers sit under rectifier diodes, which fall under discrete semiconductors. Their primary role is to convert AC to DC in switch-mode power supplies while minimizing the reverse-recovery losses that limit switching frequency in standard recovery rectifiers.
At the architecture level, the FESB16DT-E3/81 employs a single-junction diffused silicon die with a glass-passivated surface that suppresses surface leakage and improves high-temperature stability. The 35 ns reverse recovery figure, combined with low stored charge, allows operation at switching frequencies from 50 kHz to over 200 kHz without the efficiency penalties that plague 60-Hz standard recovery parts. The TO-263AB (D2PAK) tab provides a low thermal resistance path for the dissipated power.
Typical applications include switch-mode power supplies (SMPS), freewheeling diodes in motor drives, DC/DC converters, inverters, and uninterruptible power supplies. The 16 A current rating and 200 V blocking voltage cover most 48 V telecom bus, 24 V industrial, and low-voltage three-phase rectified topologies.
When designing with this part, ensure that the heatsink tab receives adequate copper area to keep the junction temperature below 150 C under worst-case continuous forward current. The 35 ns reverse recovery is fast enough for hard-switched PFC and forward converters, but a snubber may be required in high-dv/dt bridge configurations.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Sourcing data is current as of 2026-10-08, and all parametric figures are taken from Vishay's published specification.
Drop-in-Alternativen für FESB16DT-E3/81 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
FESB16DT-E3/45
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FESB16AT-E3/81
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FESB16GT-E3/45
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FESB16JT-E3/45
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MUR1620CTR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STTH1602CT
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VS-16CTU04S-M3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
FESB16DT-E3/81 Grenzwerte & elektrische Eigenschaften
| Diode Type | Standard Recovery Rectifier (Ultrafast) |
| Gehäuse | TO-263AB (D2PAK) |
| Montageart | Surface Mount |
| Maximum DC Reverse Voltage (Vr) | 200 V |
| Average Rectified Forward Current (Io) | 16 A |
| Forward Voltage (Vf) Max at If | 975 mV at 16 A |
| Reverse Recovery Time (trr) | 35 ns |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| Junction Temperature (Tj) Max | 150 C |
| MSL-Level | 1 (per J-STD-020) |
| Terminal Finish | Solderable tin-plated (LF maximum peak of 245 C) |
| Configuration | Single Diode |
| RoHS-Status | Compliant |
FESB16DT-E3/81 Pin-Konfiguration
| Pin 1 | Anode 1 — Forward current terminal (anode) |
| Pin 2 | Cathode — Return terminal (cathode), internally bonded to the tab |
| Pin 3 | Anode 2 — Forward current terminal (anode), parallel with pin 1 |
| Pin TAB | Cathode Tab — Main cathode terminal and thermal pad (electrically tied to pin 2) |
Forward Current vs Case Temperature Derating
Typische Anwendungen
FESB16DT-E3/81 ist geeignet für 6 Anwendungs: Switch-Mode Power Supply (SMPS) Output Rectifier, Power Factor Correction (PFC) Freewheeling Diode, DC/DC Converter Rectifier Stage, Motor Drive Freewheeling Diode, Uninterruptible Power Supply (UPS) and Inverter, Battery Charger Rectifier Stage.
Switch-Mode Power Supply (SMPS) Output Rectifier
The FESB16DT-E3/81 is well-suited for the output rectifier stage in switch-mode power supplies, particularly in 48 V telecom and 24 V industrial converters. The 35 ns reverse recovery time allows high-frequency switching above 100 kHz with low switching losses, and the 16 A continuous current supports converters up to approximately 750 W. Placed on the secondary side of an isolated forward or half-bridge converter, the diode handles rectified output current with the exposed D2PAK tab providing low Rth-JC to the PCB copper pour. Unlike standard recovery rectifiers, the ultrafast trr minimizes reverse-recovery-induced switching loss in the primary-side MOSFETs, raising overall converter efficiency.
Empfohlen
Power Factor Correction (PFC) Freewheeling Diode
In continuous-conduction-mode PFC boost converters, the FESB16DT-E3/81 serves as the boost diode, switching at 65-100 kHz in CCM. Its 35 ns trr is critical: a slower diode would incur reverse-recovery losses that erode efficiency and generate conducted EMI. The 200 V reverse rating covers 380 V rectified mains with adequate margin, and the 975 mV Vf at 16 A keeps conduction loss reasonable at full load. For 230 V AC input designs where the rectified bus reaches 400 V, the FESB16GT-E3/45 (400 V) drop-in variant is the appropriate choice within the same Vishay family.
Empfohlen
DC/DC Converter Rectifier Stage
The FESB16DT-E3/81 functions as the secondary-side rectifier in isolated DC/DC converters such as forward, push-pull, and bridge topologies. The 16 A rating supports converter outputs up to 60 V at full load, common in industrial and telecom bricks. The 35 ns trr minimizes duty-cycle losses and improves cross-regulation between paralleled converters, while the glass-passivated die ensures long-term reliability under continuous thermal cycling. The TO-263AB tab provides direct solder connection to a copper pour heatsink area of at least 1 square inch for full 16 A operation.
Empfohlen
Motor Drive Freewheeling Diode
In H-bridge or half-bridge motor drives, the FESB16DT-E3/81 acts as the freewheeling diode across the switching FETs or IGBTs, carrying inductive kickback current when the switching device turns off. The 35 ns trr is faster than typical motor-drive PWM transitions at 20 kHz, ensuring clean current commutation and minimal voltage overshoot. The 16 A continuous rating and 200 V blocking voltage cover 48 V brushless DC and low-voltage industrial servo drives. The D2PAK package enables compact PCB designs with the tab heatsinked directly to the chassis ground plane.
Empfohlen
Uninterruptible Power Supply (UPS) and Inverter
The FESB16DT-E3/81 is used in UPS and inverter stages operating from 48 V battery stacks or rectified low-voltage AC. Its 200 V rating covers 48 V nominal battery banks with transients, while the 35 ns trr allows operation at the 20 kHz to 50 kHz switching frequencies typical of these systems. The 16 A current handles inverter outputs up to approximately 700 W continuous. Multiple diodes can be paralleled with appropriate current-sharing inductors for higher-power inverters, leveraging the predictable Vf characteristics of the glass-passivated die.
Empfohlen
Battery Charger Rectifier Stage
In offline and isolated battery chargers for 12 V to 48 V battery stacks, the FESB16DT-E3/81 serves as the secondary-side rectifier handling charge currents up to 16 A continuous. The ultrafast recovery characteristic keeps the charger switching frequency high enough to shrink the main transformer, while the 200 V reverse rating covers rectified 110 V AC mains with margin. The D2PAK package provides a thermal path sufficient for continuous charge current without an external heatsink beyond PCB copper, simplifying the charger enclosure design.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für FESB16DT-E3/81 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | FESB16AT-E3/81 | FESB16GT-E3/45 | FESB16JT-E3/45 | MUR1620CTR | STTH1602CT |
|---|---|---|---|---|---|---|
| Brand | Vishay | Vishay | Vishay | Vishay | onsemi | STMicroelectronics |
| Package | TO-263AB (D2PAK) | TO-263AB (D2PAK) - same | TO-263AB (D2PAK) - same | TO-220-2 - through-hole | TO-220AB - through-hole | TO-220AB - through-hole |
| Maximum Reverse Voltage (Vr) | 200 V | 50 V | 400 V | 600 V | 200 V | 200 V |
| Average Rectified Current (Io) | 16 A | 16 A | 16 A | 16 A | 16 A | 16 A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through-Hole | Through-Hole | Through-Hole |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Voltage tier covers full mid-range rectifier applications (vs. FESB16AT-E3/81 (50V) and FESB16GT-E3/45 (400V))
- 35 ns trr enables high-frequency SMPS operation (vs. FESB16JT-E3/45 (50 ns trr at 600 V))
- Surface-mount D2PAK saves board space vs through-hole (vs. MUR1620CTR (TO-220 through-hole))
Designhinweise
The FESB16DT-E3/81 dissipates up to approximately 15.6 W at full 16 A load (975 mV Vf x 16 A). With the D2PAK tab, thermal resistance to case is in the 1.5-2 C/W range, but to ambient depends entirely on the PCB copper area. Estimated: with 1 square inch of 2 oz copper pour on a standard FR-4 PCB, theta-JA is approximately 35-45 C/W, allowing full 16 A continuous operation up to about 100 C ambient. Reduce to 12 A or add a forced-air heatsink for higher ambient temperatures.
The D2PAK tab must be soldered to a continuous copper pour on the PCB - thermal vias under the tab are recommended to conduct heat to inner copper planes. Minimum copper area for full 16 A rating is 1 square inch of 2 oz copper. Keep high-current traces (anode and cathode) wide enough to carry 16 A continuous with less than 30 C temperature rise; typically 0.1 inch wide traces on outer layers with 2 oz copper.
Place the rectifier as close as possible to the switching transformer or inductor to minimize the loop area carrying high-di/dt current. Minimize parasitic inductance in the commutation loop by using short, wide traces and a ground/power-plane sandwich structure. For high-frequency PFC or forward converters operating above 100 kHz, the reverse-recovery-induced ringing can couple into adjacent signal traces - keep sensitive analog traces away from the rectifier.
Do not exceed the 200 V reverse voltage rating - even brief transients above this value can avalanche the die and cause permanent degradation. Add a TVS or RC snubber across the rectifier if inductive kickback could exceed Vr. Do not parallel two FESB16DT-E3/81 units without current-sharing inductors: the positive Vf temperature coefficient provides natural sharing, but mismatched thermal paths can still cause one diode to hog current.
Compliance-Informationen
RoHS compliant per product suffix E3 and Vishay product page. Lead-free terminal finish per J-STD-020 MSL-1. AEC-Q100 not applicable (discrete rectifier).
