GAN063-650WSAQ - 650V 50mΩ GaN FET, TO-247-3 | Nexperia
Teilenummer: GAN063-650WSAQ ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $13.5 | $13,50 |
| 10 | $12.4 | $124,00 |
| 100 | $11.1 | $1.110,00 |
| 500 | $9.85 | $4.925,00 |
| 1.000 | $8.75 | $8.750,00 |
GAN063-650WSAQ Übersicht
What is a GaN FET? A Gallium Nitride Field-Effect Transistor is a wide-bandgap power semiconductor that switches faster and with lower switching losses than equivalent silicon MOSFETs. GaN belongs to the hypernym hierarchy: GaN FET -> wide-bandgap semiconductor -> power transistor -> discrete semiconductor. Compared with silicon superjunction MOSFETs of similar voltage class, GaN devices offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and smaller output capacitance energy (Eoss), enabling smaller magnetics and higher system efficiency in hard-switched topologies.
The GAN063-650WSAQ is a normally-off cascode GaN FET that integrates a low-voltage silicon MOSFET with a high-voltage GaN HEMT to deliver a standard MOSFET gate-drive experience. Key features include a 650 V drain-source blocking voltage, 50 mΩ typical on-resistance, low gate charge for fast switching transitions, and zero Qrr which eliminates body-diode reverse-recovery losses in half-bridge configurations. The TO-247-3 package provides a robust mechanical form-factor familiar to power designers and supports screw-mount thermal attachment to a heatsink.
Technically, the cascode configuration means the device is driven by a standard 0-10 V or 0-12 V gate signal like a silicon MOSFET, but the drain-current conduction and blocking are performed by the GaN HEMT, giving engineers a drop-in upgrade path from silicon MOSFETs to GaN. AEC-Q101 qualification makes the part suitable for automotive-grade designs including on-board chargers and DC-DC converters for electric vehicles.
Typical applications include electric vehicle on-board chargers (OBC), totem-pole PFC converters, telecom rectifier stages, industrial SMPS, solar micro-inverters, and high-density server power supplies. The combination of 650 V rating and 50 mΩ RDS(on) targets sub-3 kW power conversion stages where efficiency above 98% is required.
Design consideration: drive the GAN063-650WSAQ with a totem-pole capable gate driver that can source/sink at least 1 A peak gate current, keep the gate-loop PCB inductance below 5 nH, and place a small ferrite bead or RC snubber on the source return to suppress the high dV/dt-induced ringing that GaN devices generate. The AEC-Q101 'Q' suffix also implies PPAP documentation and tighter process control than the standard-grade GAN063-650WSA.
Drop-in-Alternativen für GAN063-650WSAQ – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
GAN063-650WSA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
GAN041-650WSA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
GAN095-650WSA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
GS66508B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TP65H050G4WS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
GAN063-650WSAQ Grenzwerte & elektrische Eigenschaften
| Manufacturer | Nexperia |
| Part Number | GAN063-650WSAQ |
| Device Type | N-Channel GaN FET (Cascode, normally-off) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 34.5 A |
| On-Resistance (RDS(on)) | 50 mΩ (typical) |
| Power Dissipation (PD, Tc) | 143 W |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN, near-zero) |
| Technology | Cascode GaN HEMT + low-voltage silicon MOSFET |
| Betriebstemperaturbereich | -55C to +150C (junction, typical for TO-247 GaN) |
| Gehäuse | TO-247-3 (through-hole) |
| Montageart | Through Hole |
| Automotive Qualification | AEC-Q101 qualified (Q suffix) |
| RoHS-Status | Compliant |
GAN063-650WSAQ Pin-Konfiguration
| Pin 1 | Gate — Gate drive input (0 V off, 10-12 V on) |
| Pin 2 | Drain — High-voltage drain connection |
| Pin 3 | Source — Source / power ground return |
| Pin Tab | Drain (Tab) — Internally connected to Drain (pin 2) - heatsink mounting |
Sicherer Arbeitsbereich (DC) - GAN063-650WSAQ
Typische Anwendungen
GAN063-650WSAQ ist geeignet für 7 Anwendungs: EV On-Board Charger (OBC), Totem-Pole Bridgeless PFC, Telecom Rectifier / Server PSU, Solar Micro-Inverter, Industrial Motor Drive, Class-D Audio Amplifier Output Stage, Aerospace DC-DC Power Stage.
EV On-Board Charger (OBC)
The Nexperia GAN063-650WSAQ targets 3.3-22 kW EV on-board chargers where its 650 V blocking voltage handles 400 V bus transients with margin and its 50 mΩ RDS(on) cuts conduction loss compared with a silicon superjunction MOSFET. AEC-Q101 qualification plus PPAP documentation lets automotive OEMs drop it directly into a qualified OBC design without re-doing reliability analysis. Zero Qrr enables bridgeless totem-pole PFC topologies, raising peak efficiency above 98.5% and reducing heatsink mass - a critical win for vehicle-range-limited platforms.
Empfohlen
Totem-Pole Bridgeless PFC
For totem-pole bridgeless PFC front ends in 1-3 kW telecom and industrial SMPS, the GAN063-650WSAQ's near-zero Qrr eliminates the body-diode reverse-recovery loss that prevents silicon MOSFETs from running in this topology at high frequency. Designers can switch at 100-200 kHz to shrink the boost inductor, while still achieving 99% efficiency. The 650 V rating also tolerates 240 VAC rectified peaks (≈ 339 V) plus 80 V of margin for surge events, simplifying surge-protection design.
Empfohlen
Telecom Rectifier / Server PSU
The GAN063-650WSAQ delivers the efficiency and power density needed for 48 V telecom rectifiers and 80 PLUS Titanium server PSUs where every 0.5% efficiency gain translates to lower cooling OPEX. Its 50 mΩ on-resistance at 650 V beats silicon superjunction MOSFETs in the same package, and the TO-247-3 mechanical form-factor supports the screw-mount heatsink assembly used in 1U/2U server form factors. GaN switching at 100+ kHz shrinks magnetics enough to reach 50 W/in³ power density targets.
Empfohlen
Solar Micro-Inverter
In 300-600 W solar micro-inverters, the Nexperia GAN063-650WSAQ replaces a silicon IGBT or superjunction MOSFET in the H-bridge stage to push switching frequency higher and shrink the output filter. The AEC-Q101 automotive-grade pedigree also helps with outdoor reliability under thermal stress from PV module mounting. Higher frequency operation enables thinner, lower-cost ferrite cores and reduces total BOM cost despite the higher per-unit GaN price.
Empfohlen
Industrial Motor Drive
Low-voltage industrial motor drives up to 5 kW benefit from the GAN063-650WSAQ in the inverter bridge because GaN's low switching loss reduces the dead-time requirement and improves torque ripple at low RPM. The 650 V rating also fits 400-480 VAC rectified buses with surge margin. Through-hole TO-247-3 packaging matches the rugged mechanical assembly expectations of factory-floor industrial equipment.
Empfohlen
Class-D Audio Amplifier Output Stage
High-end Class-D audio amplifiers benefit from the GAN063-650WSAQ's combination of 650 V breakdown and 50 mΩ RDS(on) to drive 4-8 Ω loudspeaker loads at high power with lower THD than silicon MOSFETs. The GaN cascode's zero Qrr removes the dead-time-induced crossover distortion that limits Class-D audio quality, while the fast switching reduces output-filter inductor size for slim form-factor designs.
Empfohlen
Aerospace DC-DC Power Stage
In 28 V / 270 V aerospace DC-DC converter power stages, the Nexperia GAN063-650WSAQ's wide-bandgap switching reduces magnetics mass - a critical win for weight-sensitive avionics. The 650 V rating handles the 270 VDC aerospace bus with substantial transient margin, and the AEC-Q101 qualification provides reliability documentation that aerospace integrators typically accept as a baseline for DO-160 environmental qualification.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für GAN063-650WSAQ – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | GAN063-650WSA | GAN041-650WSA | GS66508B | TP65H050G4WS |
|---|---|---|---|---|---|
| Package | TO-247-3 (Nexperia GaN) | TO-247-3 - same | TO-247-3 - same | TO-247-3 (GaNpx) - same | TO-247-3 - same |
| Brand | Nexperia | Nexperia | Nexperia | GaN Systems | Transphorm |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V | 650 V |
| On-Resistance RDS(on) | 50 mΩ | 50 mΩ | 41 mΩ (-18%) | 50 mΩ | 50 mΩ |
| Continuous Drain Current (Tc) | 34.5 A | 34.5 A | 47 A (+36%) | 30 A (-13%) | 34 A (-1%) |
| Power Dissipation | 143 W | 143 W | 170 W | 125 W | 150 W |
| Reverse Recovery (Qrr) | 0 nC (GaN) | 0 nC | 0 nC | 0 nC | 0 nC |
| Automotive Qualification | AEC-Q101 (Q suffix) | No (standard grade) | No (standard grade) | No | No |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 automotive qualification with PPAP documentation (vs. GAN063-650WSA (standard grade))
- Lowest on-resistance in Nexperia's 50 mΩ 650 V GaN family at this RDS(on) (vs. GAN095-650WSA)
- Nexperia cascode gate drive simplicity vs GaN Systems enhancement-mode (vs. GS66508B)
Designhinweise
GaN FETs switch 5-10x faster than silicon MOSFETs, so PCB layout is critical. Keep the gate-driver-to-Gate trace and the Source return path as short as possible (target loop inductance < 5 nH). Place a small RC snubber (e.g., 10 ohm + 1 nF) or ferrite bead on the source terminal to suppress dV/dt-induced ringing. Use a grounded copper pour on the inner layer directly under the TO-247-3 tab to provide a low-impedance thermal and electrical return path.
Estimated: at 50 mΩ RDS(on) and 20 A continuous load, conduction loss is P = I² × R = 20 W. With TO-247-3 theta_JC typically around 0.5 C/W and a 0.3 C/W heatsink, junction-to-ambient thermal resistance is roughly 3-4 C/W, giving ~80C temperature rise at 20 W - within the 150C junction limit. Above 30 A continuous, a forced-air-cooled heatsink is required to keep Tj below 125C for reliability margin.
Common pitfalls when using the GAN063-650WSAQ: (1) Do not exceed VGS of +/-20 V - the cascode gate oxide is much thinner than a silicon MOSFET gate; (2) Do not assume the device is a silicon MOSFET - Qrr is near-zero so dead-time can be drastically reduced, but never set dead-time to zero; (3) Verify that the bridge rectifier diodes feeding a totem-pole are SiC, not silicon, otherwise the silicon diode reverse recovery negates the GaN efficiency benefit; (4) Confirm Kelvin-source connection when using a separate gate-driver return path.
Place the gate-driver IC within 10 mm of the Gate pin to minimize parasitic inductance. Use a 4-layer PCB with a continuous ground plane on layer 2 immediately under the TO-247-3 footprint. Decouple the gate-driver supply with a 100 nF ceramic + 10 uF bulk cap placed within 3 mm of the driver's VCC pin. For high-side GaN drivers, use a bootstrap or isolated DC-DC supply rated for the switching frequency - standard bootstrap diodes are too slow for 200 kHz+ GaN switching.
Compliance-Informationen
AEC-Q101 qualified per the 'Q' suffix; RoHS and REACH compliant per Nexperia product page; lead-free and halogen-free assembly compatible.
