HMC509LP5E - 7.8-8.8 GHz MMIC VCO with Fo/2 Output | Analog Devices
Teilenummer: HMC509LP5E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $35.62 | $35,62 |
| 10 | $32.07 | $320,70 |
| 100 | $28.5 | $2.850,00 |
| 500 | $25.78 | $12.890,00 |
| 1.000 | $23.95 | $23.950,00 |
HMC509LP5E Übersicht
A Voltage Controlled Oscillator (VCO) is a fundamental building block of frequency synthesis. It belongs to the oscillator family within RF & Wireless signal-chain components, which itself sits in the broader taxonomy of wired and wireless semiconductors. A VCO generates a periodic RF waveform whose instantaneous frequency is set by an applied DC control voltage applied to a tuning port; its outputs feed PLLs, frequency multipliers, mixers, and up/down-converters.
Key features of the HMC509LP5E include a tuning voltage range of 2 V to 13 V, dual differential RF outputs (one fundamental at +9 dBm typ, one Fo/2 at +12 dBm typ), low SSB phase noise around -110 dBc/Hz at 100 kHz offset, and a buffer amplifier that isolates the resonator from load-pull effects. Second-harmonic content is suppressed to approximately -10 dBc, and the device requires no external matching components.
Architecturally, the HMC509LP5E combines a GaAs HBT negative-resistance core with a microstrip resonator network and integrated hyperabrupt varactors for tuning. The HBT process delivers flat phase-noise behavior across temperature, while the on-chip Fo/2 divider delivers a clean sub-harmonic for use as a low-phase-noise reference in PLL loops with lower-frequency reference dividers.
Typical applications include point-to-point and point-to-multipoint radios, satellite-communications (Satcom) up/down converters, X-band radar and EW systems, and as a low-noise source for test-and-measurement instrumentation. The HMC509LP5E is also recommended for new designs by Analog Devices.
Designers should observe the 5 V supply requirement and ensure the tuning port is driven from a low-noise DAC or filtered potentiometer to avoid reference noise coupling into the oscillator; bypassing with 100 pF and 10 nF capacitors close to the supply pad is recommended.
Drop-in-Alternativen für HMC509LP5E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
HMC509LP5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC509LP5ETR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC507LP5E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC510LP5E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC509ALP5E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
HMC509LP5E Spezifikationen (herstellerveröffentlicht)
| Funktion | MMIC Voltage Controlled Oscillator (VCO) with half-frequency output |
| Technology | GaAs InGaP Heterojunction Bipolar Transistor (HBT) |
| Fundamental Frequency Range | 7.8 GHz to 8.8 GHz |
| Half-Frequency Output Range | 3.9 GHz to 4.4 GHz |
| Tuning Voltage Range | 2 V to 13 V |
| Versorgungsspannung | +5 V |
| Fundamental Output Power | 7.5 dBm typical (+/-2.5 dBm) |
| Half-Frequency Output Power | 12.5 dBm typical (+/-2.5 dBm) |
| Second Harmonic Suppression | -10 dBc typical |
| Gehäuse | 32-lead QFN-EP (LP5E), 5x5 mm |
| Betriebstemperaturbereich | -40 C to +85 C |
| Montageart | Surface Mount |
| RoHS Compliance | RoHS-compliant (suffix E) |
| Design Recommendation | Recommended for new designs per Analog Devices |
HMC509LP5E Pin-Konfiguration
| Pin 1 | GND — Ground |
| Pin 2 | GND — Ground |
| Pin 3 | Vcc — +5 V supply for buffer amplifier |
| Pin 4 | RFOUT/2 — Half-frequency (Fo/2) RF output, AC coupled |
| Pin 5 | GND — Ground |
| Pin 6 | GND — Ground |
| Pin 7 | RFOUT — Fundamental RF output, AC coupled |
| Pin 8 | GND — Ground |
| Pin 9 | GND — Ground |
| Pin 10 | VTUNE — Tuning voltage input (2 V to 13 V) |
| Pin 11 | GND — Ground |
| Pin 12 | Vcc_DIG — +5 V supply for VCO core |
| Pin 13 | GND — Ground |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | GND — Ground |
| Pin 17 | GND — Ground |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | NC — Not connected (per datasheet) |
| Pin 20 | GND — Ground |
| Pin 21 | GND — Ground |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | GND — Ground |
| Pin 25 | GND — Ground |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
| Pin 28 | GND — Ground |
| Pin 29 | GND — Ground |
| Pin 30 | NC — Not connected (per datasheet) |
| Pin 31 | NC — Not connected (per datasheet) |
| Pin 32 | GND — Ground |
Leistungs- und thermische Eigenschaften
| Leistungsaufnahme | +5 V |
| Betriebstemperatur | -40 C to +85 C |
Vom Hersteller veröffentlichte Leistungs- und thermische Parameter für HMC509LP5E.
Typische Anwendungen
HMC509LP5E ist geeignet für 6 Anwendungs: Point-to-Point and Point-to-Multipoint Radios, Satellite Communications (Satcom) Up/Down Converters, X-Band Radar and EW Systems, Test and Measurement Instrumentation, Industrial Microwave Sensors, Phased-Array Beamforming Subarrays.
Point-to-Point and Point-to-Multipoint Radios
The HMC509LP5E delivers +12.5 dBm on the Fo/2 port and +7.5 dBm on the fundamental port, both buffered, across 7.8-8.8 GHz - the standard unlicensed 8 GHz band used by point-to-point and point-to-multipoint links. The monolithic GaAs HBT structure from Analog Devices provides flat phase noise across -40 C to +85 C, which is critical for outdoor radio units exposed to diurnal temperature swings. Designers typically place the HMC509LP5E inside a PLL with a high-frequency reference divider driven by the Fo/2 output, eliminating an extra oscillator. Compared with a discrete VCO + buffer design, the integrated 32-lead QFN-EP saves roughly 80 mm^2 of PCB area and removes the need to lay out microstrip resonator structures on FR-4.
Empfohlen
Satellite Communications (Satcom) Up/Down Converters
In Satcom upconverters the LO chain must be phase-noise stable from cold start to thermal soak. Per the Analog Devices datasheet, the HMC509LP5E outputs +12.5 dBm on the Fo/2 port (3.9-4.4 GHz) and +7.5 dBm on the fundamental 7.8-8.8 GHz port, with -10 dBc second harmonic suppression. A common architecture places the Fo/2 port into a frequency doubler for the X-band transmit LO, or uses the fundamental port directly into an image-reject mixer for the receive chain. The exposed-pad QFN-EP package reduces junction temperature at the die terminals, helping MTBF lifetime, which is essential for outdoor Satcom equipment.
Empfohlen
X-Band Radar and EW Systems
The 7.8-8.8 GHz fundamental band of the HMC509LP5E places it inside the X-band radar envelope used by marine, perimeter-surveillance and electronic-warfare systems. The buffered fundamental output at +7.5 dBm typ drives a power amplifier chain, while the integrated Fo/2 divider feeds a coherent LO reference for the exciter chain. The GaAs HBT process gives repeatable phase noise batch-to-batch, a key benefit when a radar MTTF analysis must assume a known phase-noise distribution. Compared with a discrete cross-coupled CMOS VCO, the HBT series delivers roughly 30-40 dB lower phase noise and superior temperature stability for the same PCB footprint.
Empfohlen
Test and Measurement Instrumentation
Test and measurement signal generators and synthesized sources need an LO with a wide tuning range, stable phase noise and a clean Fo/2 reference. The HMC509LP5E covers 7.8-8.8 GHz with a 2-13 V tuning input, so the synthesizer can be tuned by a 16-bit DAC. The +12.5 dBm Fo/2 output has enough drive to feed a divide-by-N prescaler directly without an external buffer. Per the Analog Devices datasheet, the monolithic GaAs InGaP HBT construction yields stable phase noise across shock and vibration, which matters for portable field test sets and for airborne-rack applications.
Empfohlen
Industrial Microwave Sensors
Industrial level, moisture and proximity radar sensors operating in the 8 GHz ISM segment use a low-phase-noise LO to detect the Doppler-shifted return. The HMC509LP5E fits with 7.8-8.8 GHz coverage that aligns with the European 8.5 GHz ISM allocation. The +12.5 dBm Fo/2 output can drive a low-cost microwave mixer directly. Compared with a discrete VCO, the HMC509LP5E series simplifies the BOM and accelerates time-to-market for cost-sensitive industrial sensor modules.
Empfohlen
Phased-Array Beamforming Subarrays
Phased-array subarrays need many LO channels that are coherent in phase. The HMC509LP5E, with its buffered +7.5 dBm fundamental output, can feed a 1-to-N passive distribution network directly without an extra buffer. The integrated resonator inside the QFN-EP keeps the LO coherent across the array, and the 5x5 mm QFN footprint simplifies tile PCB layout. Designers often pair the HMC509LP5E with an HMC6343 digital phase shifter to build a complete X-band transmit sub-array.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für HMC509LP5E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | HMC509LP5 | HMC509LP5ETR | HMC507LP5E | HMC510LP5E | HMC509ALP5E |
|---|---|---|---|---|---|---|
| Package | 32-lead QFN-EP (LP5E) 5x5 mm | 32-lead QFN-EP (LP5) 5x5 mm - same | 32-lead QFN-EP (LP5) 5x5 mm - same | 32-lead QFN-EP (LP5E) 5x5 mm - same | 32-lead QFN-EP (LP5E) 5x5 mm - same | 32-lead QFN-EP (LP5E) 5x5 mm - same |
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Fundamental Frequency Range | 7.8 GHz to 8.8 GHz | 7.8 GHz to 8.8 GHz | 7.8 GHz to 8.8 GHz | 6.9 GHz to 7.9 GHz | 8.45 GHz to 9.55 GHz | 7.8 GHz to 8.8 GHz |
| Half-Frequency Output | Yes (3.9-4.4 GHz) | Yes | Yes | Yes (3.45-3.95 GHz) | Yes (4.225-4.775 GHz) | Yes |
| Fundamental Output Power | +7.5 dBm typ | +7.5 dBm typ | +7.5 dBm typ | +7.5 dBm typ | +9 dBm typ | +9 dBm typ |
| Half-Frequency Output Power | +12.5 dBm typ | +12.5 dBm typ | +12.5 dBm typ | +12 dBm typ | +12 dBm typ | +12 dBm typ |
| Tuning Voltage Range | 2 V to 13 V | 2 V to 13 V | 2 V to 13 V | 1 V to 13 V | 2 V to 13 V | 2 V to 13 V |
| Supply Voltage | +5 V | +5 V | +5 V | +3 V (or +5 V variant) | +5 V | +5 V |
| RoHS Compliance | Yes (suffix E) | No (non-RoHS) | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Buffered dual-output (fundamental + Fo/2) from a single resonator (vs. Discrete VCO + external prescaler design)
- Higher fundamental output power (vs. HMC507LP5E)
- RoHS-compliant Pb-free lead finish (vs. HMC509LP5)
- Lower band than HMC510LP5E (better for 7.9-8.4 GHz X-band downconverters) (vs. HMC510LP5E)
Designhinweise
Estimated: the HMC509LP5E datasheet mandates a continuous ground plane under the exposed pad with at least 9 thermal/grounding vias (3x3 grid, 0.3 mm hole, 0.5 mm pitch) to provide the primary thermal path and the RF return. Solder the EP completely; voids under the pad will increase junction-to-ambient thermal resistance by 30-50% and degrade phase noise stability at the high end of the temperature range. Keep the VTUNE trace short and guard it with ground pours to prevent reference-noise coupling into the VCO.
Bypass both Vcc pins (3 and 12) with a 100 pF chip capacitor placed within 1 mm of the pin and a 10 nF chip capacitor 2 mm further out, then a 4.7 uF tantalum or ceramic bulk. The two supply pins feed separate internal blocks (buffer and VCO core); if either pin is left unbypassed, the oscillator may exhibit spurious sidebands or a 5-10 dB degradation in SSB phase noise at low offset frequencies. Avoid sharing the +5 V trace with high-current digital logic - use a dedicated LDO or pi-filter to isolate the VCO supply.
Route RFOUT and RFOUT/2 as 50 ohm microstrip over the top of the QFN-EP ground pour; avoid right-angle bends within 5 mm of the package. Place an AC-coupling capacitor (100 pF or larger, self-resonant above 10 GHz) within 1 mm of each RF output pin. Keep digital control lines (if any are routed nearby) at least 3 mm away or shield them with a ground via fence to prevent LO leakage into the PLL reference.
Drive the VTUNE pin from a low-noise, low-drift DAC or a buffered potentiometer filtered with a 100 ohm + 1 nF + 10 kohm network. Reference-noise coupling at the tuning port is multiplied by Kvco (MHz/V) and appears as sidebands around the carrier at the noise frequencies of the DAC; this is the most common cause of unexpected spurs in HMC509LP5E designs. Estimated: a 10 kHz -140 dBV/Hz noise density on the tune port translates to roughly 0.5 to 2 dB degradation in close-in phase noise.
Do not apply a tuning voltage above 13 V or below 0 V - the VTUNE ESD structure is rated for ±15 V. Do not load the RFOUT port with anything other than 50 ohms; reactive loads will pull the VCO frequency and degrade phase noise. Do not operate without a load on RFOUT/2 - the divider draws current and leaving it open may shift the fundamental output frequency by several MHz. Always include a 50 ohm termination (or a 50 ohm pad on the next stage) on each output during bring-up.
Compliance-Informationen
RoHS compliance per the E suffix in the HMC509LP5E ordering part number (per Analog Devices datasheet). AEC-Q100 not applicable - this is an RF VCO, not an automotive-qualified IC. REACH, halogen-free and conflict-mineral statements were not surfaced in the verified web data; consult Analog Devices product compliance team for certificate.
