IHLP2525CZER1R0M01 - 1µH 11A Shielded Power Inductor | Vishay Dale
Teilenummer: IHLP2525CZER1R0M01 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.66 | $660,00 |
| 3.000 | $0.55 | $1.650,00 |
IHLP2525CZER1R0M01 Übersicht
A power inductor is a passive energy-storage component that stores energy in a magnetic field when current flows through its coil and releases that energy to maintain current flow during switching transitions. In switch-mode power supplies, an inductor smooths the switched current and defines the energy-transfer cycle; higher saturation current allows the inductor to sustain larger peak currents without losing inductance, and lower DCR reduces I²R conduction loss. The IHLP family belongs to the broader categories: inductor → magnetic component → passive component, and sits in the power-management sub-tree of a power-supply block diagram.
Key features include a composite shielded construction that minimizes stray magnetic field and audible buzz noise, the lowest 3.0 mm profile in its 2525 footprint, excellent DC/DC energy storage up to 5 MHz, and suitability as a filter inductor up to its self-resonant frequency (SRF). Per the datasheet features list, the part handles high transient current spikes without hard saturation and is 100% lead-free and RoHS-compliant.
The IHLP2525CZER1R0M01 uses a molded metal-alloy powder core rather than a ferrite core; this construction distributes the magnetic flux inside a homogeneous medium, suppressing the sharp saturation knee found in ferrite inductors. The result is a soft saturation curve: inductance rolls off gradually as current increases, making the part tolerant of high di/dt transients typical of multi-phase VRMs and POL regulators. The shielded composite body also reduces acoustic noise and EMI radiation by confining the field within the device body.
Typical applications include high-current point-of-load (POL) regulators, multi-phase VRMs for servers and workstations CPUs/GPUs, telecom base-station DC/DC bricks, portable device chargers, and battery-powered systems where the low 3.0 mm profile is required for thin enclosures. It is commonly used in voltage rails sequencing on FPGAs, ASICs, and graphics processors where 1 µH power inductors are standard. According to the Vishay datasheet, it is well-suited to filter inductor applications up to the part's self-resonant frequency.
When designing with this device, derate the saturation current against temperature: Vishay specifies 11 A as the typical Isat at 25 °C, and the actual allowable current decreases at higher ambient temperatures. Confirm the operating point against the datasheet's DC current vs. inductance roll-off curve.
This page synthesizes distributor pricing, drop-in IHLP-2525 alternatives, application examples, and PCB layout notes beyond the manufacturer datasheet to support faster design-in.
Drop-in-Alternativen für IHLP2525CZER1R0M01 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IHLP2525CZER1R0M11
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IHLP2525AHER1R0M01
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IHLP2525CZER2R2M01
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IHLP2525CZER1R5M01
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IHLP2525CZERR68M01
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IHLP2525EZER1R0M01
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IHLP2525CZER1R0M01 Grenzwerte & elektrische Eigenschaften
| Inductance | 1 µH |
| Tolerance | ±20% |
| Saturation Current (Isat) | 11 A |
| DC Resistance (DCR) Max | 10 mΩ |
| Shielding | Yes (molded, composite core) |
| Gehäuse / Bauform | 2525 (6.47 mm x 6.86 mm) |
| Height | 3.0 mm |
| Montageart | Surface Mount |
| Operating Frequency Range | Up to 5 MHz (DC/DC energy storage) |
| Betriebstemperaturbereich | -55 °C to +125 °C |
| Lead-Free / RoHS | Yes (100% lead-free, RoHS-compliant) |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| Construction | Composite shielded molded inductor |
IHLP2525CZER1R0M01 2525 (6.47 mm x 6.86 mm) Pinbelegungsleitfaden
Pinbelegung für IHLP2525CZER1R0M01 (2525 (6.47 mm x 6.86 mm)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für IHLP2525CZER1R0M01.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
IHLP2525CZER1R0M01 ist geeignet für 6 Anwendungs: High-Current Point-of-Load (POL) Regulators, Multi-Phase VRMs for Server / Workstation CPUs and GPUs, Telecom DC/DC Brick Converters, Notebook / Portable Device Chargers and Adapters, Battery-Powered Portable Systems, FPGA / ASIC Power-Rail Sequencing.
High-Current Point-of-Load (POL) Regulators
The IHLP2525CZER1R0M01's 1 µH nominal inductance and 11 A saturation current make it well-suited as the output inductor in buck POL regulators powering FPGAs, ASICs, and graphics processors. Its composite metal-alloy core delivers a soft saturation curve that tolerates high transient current spikes during load-step events without losing inductance abruptly, which prevents output-voltage overshoot. The 10 mΩ max DCR keeps conduction loss to about 1.2 W at full 11 A load, and the 3.0 mm low profile supports thin card-edge or bottom-mounted VRM designs. Place the inductor on the same side as the IC with a wide, low-impedance ground pour, and use a 4-terminal land pattern to bypass the DCR of the solder joints for accurate current sensing.
Empfohlen
Multi-Phase VRMs for Server / Workstation CPUs and GPUs
In multi-phase VRM topologies, the IHLP2525CZER1R0M01 serves as the per-phase output inductor where its 11 A saturation current supports high phase currents typical of 60 A to 120 A multi-phase rails. The shielded composite construction minimizes cross-talk between phases by confining magnetic flux within the device body, eliminating the need for bulky external shields. Its 2525 footprint is footprint-compatible across phases, allowing PCB-side component standardization. Per Vishay's datasheet, the part is rated for energy storage up to 5 MHz, which aligns with the high switching frequencies used to shrink VRM output filter size.
Empfohlen
Telecom DC/DC Brick Converters
The IHLP2525CZER1R0M01 fits telecom brick converters (48 V to intermediate bus voltages) that demand a low-profile, high-current inductor with tight tolerance and high reliability. Its -55 °C to +125 °C operating temperature window supports outdoor and uncontrolled-environment deployments, while the 100% lead-free, RoHS-compliant construction meets telecom environmental directives. The shielded construction prevents the inductor from interfering with nearby RF or signal-conditioning circuits on densely populated brick boards, and the 1 µH value is standard for intermediate-bus buck stages.
Empfohlen
Notebook / Portable Device Chargers and Adapters
In compact notebook adapters and USB-PD chargers, the IHLP2525CZER1R0M01 is used as the main buck or buck-boost inductor where its 3.0 mm height enables slim charger enclosures. The 11 A saturation current supports 65 W to 100 W adapter designs, and the 10 mΩ DCR keeps full-load efficiency above 90% when paired with a synchronous rectifier. The shielded composite core eliminates the audible buzz that ferrite-core inductors exhibit under high di/dt transients - a common annoyance in user-facing charger products. The part's wide operating temperature also supports sealed-adapter thermal environments.
Empfohlen
Battery-Powered Portable Systems
For battery-powered industrial handhelds, medical portable devices, and field instruments, the IHLP2525CZER1R0M01 delivers the high-current capability required by boost and buck-boost converters stepping up Li-ion cell voltage to system rails. The composite core's soft saturation behavior protects the inductor during high inrush events when the battery is cold, and the low 3.0 mm profile supports handheld enclosures. The shielded construction also prevents EMI that could interfere with wireless radios (BLE, Wi-Fi, cellular modules) housed in the same enclosure.
Empfohlen
FPGA / ASIC Power-Rail Sequencing
When powering FPGAs and ASICs that require multiple sequenced voltage rails (typically 0.85 V core, 1.0 V aux, 1.8 V IO), the IHLP2525CZER1R0M01 can be used on each rail's buck stage. Its 1 µH inductance is a common standard value for these designs, simplifying BOM and second-source qualification. The shielded body prevents local EMI issues that would otherwise couple into the FPGA's sensitive high-speed SERDES lanes, and the part's high efficiency at full load keeps the local thermal budget low - critical in dense FPGA-module assemblies.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IHLP2525CZER1R0M01 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IHLP2525CZER1R0M11 | IHLP2525AHER1R0M01 | IHLP2525CZER2R2M01 | IHLP2525CZER1R5M01 | IHLP2525CZERR68M01 | IHLP2525EZER1R0M01 |
|---|---|---|---|---|---|---|---|
| Brand | Vishay Dale | Vishay Dale | Vishay Dale | Vishay Dale | Vishay Dale | Vishay Dale | Vishay Dale |
| Package | 2525 (6.47x6.86 mm, 3.0 mm H) | 2525 (6.47x6.86 mm, 3.0 mm H) - same | 2525 (6.47x6.86 mm, 3.0 mm H) - same | 2525 (6.47x6.86 mm, 3.0 mm H) - same | 2525 (6.47x6.86 mm, 3.0 mm H) - same | 2525 (6.47x6.86 mm, 3.0 mm H) - same | 2525 (6.47x6.86 mm, 3.0 mm H) - same |
| Inductance | 1 µH | 1 µH (same) | 1 µH (same) | 2.2 µH (+120%) | 1.5 µH (+50%) | 0.68 µH (-32%) | 1 µH (same) |
| Tolerance | ±20% | ±20% | ±20% | ±20% | ±20% | ±20% | ±20% |
| Shielding | Yes (composite shielded) | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -55 °C to +125 °C | -55 °C to +125 °C | -55 °C to +155 °C (AHE automotive) | -55 °C to +125 °C | -55 °C to +125 °C | -55 °C to +125 °C | -55 °C to +125 °C |
| RoHS / Lead-Free | Yes (100% lead-free) | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1000) | $0.66 | similar pricing | higher (auto grade) | similar pricing | similar pricing | similar pricing | similar pricing |
Wichtigste Unterscheidungsmerkmale
- Composite core with soft saturation curve (vs. Ferrite-core 2525 inductors)
- Lowest 3.0 mm profile in 2525 footprint family (vs. Other 2525-case inductors at 4.0+ mm)
- 10 mΩ max DCR with 11 A Isat (vs. IHLP2525CZERR68M01 (lower-L variant))
Designhinweise
At the 11 A saturation current, copper loss in the inductor is approximately P = I² × DCR = 11² × 0.010 = 1.21 W. Estimated: with 4-layer PCB and standard copper pours the inductor alone will rise about 30-50 °C above ambient. Provide adequate copper area on both top and inner layers, and consider thermal vias under the land pattern to spread heat. For continuous operation near 11 A, monitor the inductor body temperature with a thermocouple to confirm the -55 °C to +125 °C operating envelope is preserved.
Use the Vishay-recommended land pattern (per IHLP-2525CZ-01 datasheet mechanical drawings). Place the inductor directly between the switching node and the output capacitor, minimizing the high-di/dt loop area to reduce EMI and ringing. Use wide output-capacitor ground pours back to the IC ground to keep the AC current path short. Avoid routing sensitive analog signals directly beneath or immediately adjacent to the inductor body even with shielding.
Do not exceed the 11 A Isat rating in continuous DC operation - the inductance will drop and the output ripple will rise. Do not substitute inductors with the same case size but different family (e.g., IHLP-2525BD or IHLP-2525AHE) without re-checking DCR and Isat. Per Vishay datasheet, do not operate above 5 MHz for energy storage; above that, consider the part only as a filter inductor up to the SRF. Verify SRF and Irms values directly from the datasheet, as they were not present in the verified data.
Estimated: keep the switching-node copper plane clear of copper-fill regions that could act as antennas; route the boot-strap and gate-drive traces on inner layers to keep them away from the inductor. Place the input bulk capacitor within 5 mm of the high-side FET and connect directly to the ground pour. Use a four-terminal (Kelvin) connection to the inductor when accurate current sensing is needed - the standard two-terminal land pattern cannot distinguish DCR from joint resistance.
Compliance-Informationen
Per Vishay datasheet: 100% lead-free, RoHS-compliant. Not AEC-Q100 qualified in this -01 commercial variant; choose AHE-series suffix for automotive grade.
