KSE3055T - NPN 60V 10A BJT Transistor | onsemi | Power Switching KSE3055T von onsemi - elektronisches Bauteil
onsemi

KSE3055T - NPN 60V 10A BJT Transistor | onsemi | Power Switching

Teilenummer: KSE3055T ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
60 V Vdss 10 A Id TO-220-3 Package 2 MHz Speed
Ab $0.68 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-10-20
Mengenpreise
Menge Stückpreis Gesamt
1 $0.97 $0,97
10 $0.9 $9,00
100 $0.82 $82,00
500 $0.75 $375,00
1.000 $0.68 $680,00
ℹ️ Alle Preise sind in USD
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KSE3055T Übersicht

The onsemi KSE3055T is an NPN silicon bipolar junction transistor (BJT) rated for 60 V collector-emitter voltage, 10 A collector current, and a minimum gain-bandwidth product of 2 MHz, housed in a through-hole TO-220-3 package. It is designed for general purpose amplifier and switching applications.

A bipolar junction transistor is a three-terminal current-controlled semiconductor device that amplifies or switches electronic signals. Within the power-management hierarchy, the KSE3055T sits in the family of discrete power transistors alongside BJTs, MOSFETs, and IGBTs, and is commonly deployed after voltage regulators or microcontroller I/O stages to drive higher-current loads.

Key features include a 60 V collector-base and collector-emitter breakdown rating, a 10 A maximum continuous collector current, and a high current gain specified at IC = 10 A, which distinguishes it from smaller-signal parts whose gain is only defined at milliamp-level currents. The 2 MHz minimum gain-bandwidth product supports medium-speed switching and audio-frequency amplification.

Technically, the KSE3055T is the TO-220 through-hole member of the 3055-class NPN power transistor family descended from the legendary 2N3055. Its epitaxial construction provides robust safe-operating behavior for linear regulation and hard-switching duties, and it pairs naturally with the KSH3055 (PNP) as a complementary output pair in class-AB amplifiers and H-bridge stages.

Typical applications include linear power supply series-pass elements, medium-power audio output stages, relay and solenoid drivers, DC motor and lamp drivers, and inverter or converter output stages where through-hole mounting and easy heatsinking are preferred.

A key design consideration is thermal management: the TO-220 tab must be bonded to an adequate heatsink for multi-watt dissipation, and base drive current must be sized to keep VCE(sat) low at full load, since BJT drive power scales with collector current.

This page synthesizes distributor pricing, drop-in cross-reference alternatives, pinout data, and practical design notes not found in the manufacturer datasheet alone.

Drop-in-Alternativen für KSE3055T – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

MJE3055T

✅ Drop-In
📦 TO-220-3
same 3055-family die in same TO-220-3 footprint, identical Base-Collector-Emitter pinout, 60 V / 10 A class

📋 Referenzalternative (nicht im Katalog)

MJE3055TG

✅ Drop-In
📦 TO-220-3
lead-formed/Pb-free variant of MJE3055T, same ratings (60 V / 10 A class)

📋 Referenzalternative (nicht im Katalog)

MJF3055G

✅ Drop-In
📦 TO-220-3
fully isolated ( electrically insulated) TO-220 package, no heatsink insulator needed, same 3055 electrical class

📋 Referenzalternative (nicht im Katalog)

TIP3055T

✅ Drop-In
📦 TO-220-3
cross-brand ST 3055 equivalent, same pinout and 60 V class, verify hFE rank

📋 Referenzalternative (nicht im Katalog)

BD911

✅ Drop-In
📦 TO-220-3
higher voltage class (100 V) NPN, higher ratings provide margin, same TO-220 footprint and pinout

📋 Referenzalternative (nicht im Katalog)

2N6488

✅ Drop-In
📦 TO-220-3
listed substitute in cross-reference tables, similar 60-70 V / high-current NPN class

📋 Referenzalternative (nicht im Katalog)

KSE3055T Grenzwerte & elektrische Eigenschaften

Transistortyp NPN Bipolar Junction Transistor (BJT)
Kollektor-Emitter-Spannung (Vceo) 60 V
Kollektor-Basis-Spannung (Vcbo) 60 V
Collector Current (IC Max) 10 A
Gain-Bandwidth Product (fT) 2 MHz (Min.)
Power Dissipation (PD) 600 mW
DC Current Gain Condition Specified at IC = 10 A
Gehäuse TO-220-3
Montageart Through Hole
Transition Frequency 2 MHz

KSE3055T Pin-Konfiguration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Base — Control terminal - base drive current input
Pin 2 Collector — Collector current terminal, connected to metal mounting tab
Pin 3 Emitter — Emitter terminal - current output/load return

Typische Anwendungen

KSE3055T ist geeignet für 6 Anwendungs: Linear Power Supply Pass Element, Medium-Power Audio Output Stage, Relay and Solenoid Driver, DC Motor Driver / H-Bridge Leg, Switching Regulator Output / Converter Stage, Lamp and Heater Load Switching.

⚡

Linear Power Supply Pass Element

The KSE3055T fits linear series-pass duty because its 10 A collector current rating and gain specified at IC = 10 A preserve hFE exactly where a pass transistor operates hardest. Used as an emitter-follower after an error amplifier in a bench supply or embedded linear regulator, it multiplies the controller's output current capability by the transistor gain. Place a 0.1 uF ceramic plus bulk electrolytic at the output to ensure stability, and bolt the TO-220 tab to a heatsink sized for (VIN - VOUT) x ILOAD watts - for a 5 V drop at 3 A that is 15 W, demanding a substantial heatsink. Its through-hole TO-220 package makes thermal and mechanical mounting straightforward in serviceable industrial supplies.

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🎧

Medium-Power Audio Output Stage

With a minimum gain-bandwidth product of 2 MHz, the KSE3055T covers the full audio band with ample margin, making it suitable for class-AB push-pull output stages in speaker amplifiers. Paired with its PNP complement, the KSH3055, it forms a symmetric output pair driving 4-8 ohm loads; the 10 A rating handles low-impedance peaks without secondary concerns typical of smaller devices. Bias the pair with a VBE multiplier for thermal tracking, mount both TO-220 packages on a shared heatsink for thermal coupling, and match hFE between devices to minimize crossover distortion. For battery-powered or compact amplifiers, the 60 V VCEO supports up to roughly +/-28 V supply rails with safety margin.

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KSH3055 (PNP complementary output transistor) NE5532P (Low-noise audio preamplifier op-amp)
🔧

Relay and Solenoid Driver

The KSE3055T drives 12 V and 24 V relays, solenoids, and contactors from microcontroller or logic outputs via a base resistor. Its 60 V VCEO provides generous margin against the inductive flyback that survives even with a clamp diode, and the 10 A rating covers large industrial solenoids that exceed small-signal transistor limits. Choose the base resistor for forced beta of 5-10 to ensure hard saturation and low VCE(sat) - for a 2 A relay coil, supply roughly 200-400 mA of base drive. Always place a flyback diode across the coil; even so, the 60 V rating protects against residual spikes. The TO-220 package dissipates coil-level power comfortably at moderate ambient temperatures.

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1N4007 (Flyback clamp diode) MCP1801T-5002I/OT · Microchip Technology
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DC Motor Driver / H-Bridge Leg

In discrete H-bridges for brushed DC motors, KSE3055T devices (with KSH3055 PNP complements) form each leg, taking advantage of the 10 A rating for wheelchair, robot, or actuator motors at 12-24 V. The 2 MHz fT supports PWM frequencies of several kilohertz, though BJT switching losses rise with frequency - keep PWM near 1-5 kHz and add anti-parallel flyback diodes rated for motor current. Base drive networks must source and sink adequate current for forced-beta saturation, so a dedicated driver stage or gate-driver-style buffer is recommended between the MCU and the bridge. Heatsink all four devices; stalled-motor currents approach the 10 A limit and multiply conduction losses quickly.

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KSH3055 (PNP complement for bridge legs) MCP6491T-E/LTY · Microchip Technology
⚙️

Switching Regulator Output / Converter Stage

The KSE3055T serves as the switching element in low-cost buck, boost, or inverter topologies operating at frequencies up to roughly 20-40 kHz, limited by its 2 MHz fT and BJT storage-time behavior. Its 60 V rating suits 12-24 V input systems with headroom, while the 10 A capability supports converter outputs in the tens of watts to low hundreds of watts. Use a proportional base drive or Baker clamp to shorten storage time and reduce switching loss, and keep the magnetics and rectifier datasheets aligned with the chosen frequency. Designers preferring modern efficiency above 80% at higher frequency should consider a MOSFET, but for robust, avalanche-tolerant, easily-serviced through-hole converters the KSE3055T remains a proven choice.

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MC34063 (Switching regulator controller) LM2576D-ADJRG · HANSCHIP
💡

Lamp and Heater Load Switching

Incandescent lamps and resistive heater elements impose high inrush currents - a cold filament can draw 10-15 times its rated current - which the KSE3055T's 10 A collector rating absorbs gracefully. Operating from a 12 V or 24 V rail, the 60 V VCEO leaves ample surge margin, and the device's construction tolerates the repetitive thermal stress typical of lighting duty. Drive the base with forced beta of about 10 for saturation, and mount the TO-220 on a bracket-style heatsink since steady-state lamp or heater current is continuous. For soft-start behavior that further reduces inrush stress, ramp the base drive with an RC network rather than stepping it instantaneously from the logic output.

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RT9161-33PX · Richtek 1N5408 (Surge-rated rectifier companion)

Zusammenfassung der empfohlenen Produkte

TL431AIDBZR Texas Instruments Verwendet in: Linear Power Supply Pass Element LM2576D-ADJRG HANSCHIP Verwendet in: Linear Power Supply Pass Element, Switching Regulator Output / Converter Stage KSH3055 PNP complementary output transistor Verwendet in: Medium-Power Audio Output Stage, DC Motor Driver / H-Bridge Leg NE5532P Low-noise audio preamplifier op-amp Verwendet in: Medium-Power Audio Output Stage 1N4007 Flyback clamp diode Verwendet in: Relay and Solenoid Driver MCP1801T-5002I/OT Microchip Technology Verwendet in: Relay and Solenoid Driver MCP6491T-E/LTY Microchip Technology Verwendet in: DC Motor Driver / H-Bridge Leg MC34063 Switching regulator controller Verwendet in: Switching Regulator Output / Converter Stage RT9161-33PX Richtek Verwendet in: Lamp and Heater Load Switching 1N5408 Surge-rated rectifier companion Verwendet in: Lamp and Heater Load Switching
What is the KSE3055T transistor?
The KSE3055T is an NPN silicon bipolar junction transistor (BJT) manufactured by onsemi (originally Fairchild Semiconductor) for general purpose amplifier and switching applications. According to the manufacturer datasheet, it is rated for 60 V collector-emitter voltage, 10 A collector current, and a minimum gain-bandwidth product of 2 MHz, in a through-hole TO-220-3 package. Its DC current gain is specified at IC = 10 A, confirming it is a genuine power transistor rather than a small-signal device.
What are the key specifications of the KSE3055T that engineers should know?
The KSE3055T is an NPN BJT with 60 V VCEO, 10 A maximum collector current, 2 MHz minimum gain-bandwidth product, and 600 mW power dissipation rating as listed by DigiKey, in a TO-220-3 through-hole package. The datasheet specifies DC current gain at IC = 10 A. Engineers should note the high current rating paired with a moderate voltage rating, making it ideal for low-voltage, high-current switching and linear pass-element duties rather than high-voltage applications.
What is the pinout of the KSE3055T in the TO-220 package?
The KSE3055T TO-220-3 pinout, viewed from the front (label side) with leads down, is pin 1 = Base, pin 2 = Collector (connected to the metal tab), pin 3 = Emitter. This Base-Collector-Emitter ordering follows the standard 3055-family convention used across the 2N3055/MJE3055 descendants. Always confirm against the manufacturer datasheet PDF before PCB layout, and remember the collector tab carries full collector potential, so heatsink isolation may be required.
What is a drop-in replacement for the KSE3055T?
The best drop-in replacement for the KSE3055T is the onsemi MJE3055T, which shares the same TO-220-3 package, identical Base-Collector-Emitter pinout, and the same 60 V / 10 A class ratings. Cross-reference sources such as el-component.com also list TIP3055T, BD911, 2N6488, and MJF3055G as equivalents. All retain the 3055-class NPN characteristics, but always verify hFE grouping and package isolation (MJF is fully isolated) before substitution in production.
What is the difference between KSE3055T and 2N3055?
The KSE3055T and 2N3055 are both NPN power BJTs of the 3055 family, but they differ in package and ratings. The classic 2N3055 comes in a TO-3 (TO-204) metal can rated at 115 W, while the KSE3055T uses a plastic TO-220-3 with a 600 mW device rating per DigiKey and a 2 MHz minimum fT. Electrically both are 60 V-class NPN devices, but the 2N3055 handles far higher dissipation thanks to its metal package, making the KSE3055T a compact, lower-cost board-mounted alternative.
KSE3055T vs MJE3055T - which is better for power switching?
For power switching, the onsemi MJE3055T and KSE3055T are effectively interchangeable: both are 60 V, 10 A NPN transistors in TO-220-3 with the same pinout (Base-Collector-Emitter) and both descend from the same 3055 die family. The MJE3055T has broader current distribution and an extended family (MJE3055TG lead-free variant), while the KSE3055T may be more cost-effective where stocked. Choose whichever offers better availability and pricing at your volume; electrically neither is superior in headline parameters.
When should I choose the KSE3055T over a MOSFET like the IRF540?
Choose the KSE3055T when your driver can supply adequate base current and you need robust, avalanche-tolerant, low-cost switching at moderate speeds, or when replacing an existing BJT design. A MOSFET such as the IRF540 is preferable when gate-drive current is scarce, switching frequency exceeds tens of kHz, or conduction loss (RDS(on)) must be minimized. The BJT requires roughly IC/hFE of base drive - at 10 A this is substantial - so driver capability is the decisive factor.
Is the KSE3055T suitable for audio amplifier output stages?
Yes, the KSE3055T suits medium-power audio output stages. Its 2 MHz minimum gain-bandwidth product comfortably covers the audio band with margin, its 10 A collector current handles low-impedance speaker loads, and it pairs with the KSH3055 PNP complement for class-AB push-pull outputs. For linear audio use, provide generous heatsinking since class-AB stages dissipate significant quiescent and peak power, and match hFE between the NPN and PNP devices to minimize crossover distortion.
Can the TIP3055T replace the KSE3055T?
Yes, the TIP3055T can replace the KSE3055T in most circuits. Both are NPN 3055-class transistors in TO-220-3 packages with the same Base-Collector-Emitter pinout and comparable 60 V voltage ratings. Cross-reference listings including el-component.com confirm the equivalence. Verify the specific hFE rank and current-gain linearity at your operating current, and confirm the exact PD and thermal ratings on the TIP3055T datasheet, since thermal numbers differ between manufacturers.
What is the best STMicroelectronics equivalent for the KSE3055T?
The best STMicroelectronics equivalent for the KSE3055T is the TIP3055 (TIP3055T in TO-220-3), an NPN power transistor in the same 3055 family with a 60 V-class rating and identical Base-Collector-Emitter pinout, making it a drop-in fit on the same footprint. Cross-brand cross-reference data lists it as a standard substitute. Another ST option is the BD911, which offers higher ratings (100 V class) in TO-220, providing margin at a slightly higher cost.
Where to download the KSE3055T datasheet PDF?
The KSE3055T datasheet PDF is available from DigiKey's document library at media.digikey.com (Fairchild/onsemi KSE3055T datasheet) and from archive sites such as alldatasheet.com, which hosts the original 4-page Fairchild Semiconductor datasheet describing general purpose and switching applications. The official onsemi product page on onsemi.com also links the current datasheet revision. Always prefer the manufacturer-hosted PDF for the latest absolute maximum ratings and characterization graphs.
What is the price of the KSE3055T?
The KSE3055T is priced from approximately $0.97 per unit as of 2026-10-21, according to LCSC (stock listing C3200888). Bulk pricing typically steps down at 10, 100, and 1000 piece quantities; DigiKey and Mouser also stock the part with volume breaks. Because this is a commodity transistor, prices vary with silicon market conditions, so check the live price table on this page for current tier pricing before ordering.
Where to buy the KSE3055T online?
The KSE3055T can be bought online from major distributors including DigiKey (stocked, ships same day per their product page), Mouser, and LCSC, which lists the part in stock at $0.9690 as of 2026-10-21. Octopart aggregates six distributors for price and stock comparison. XAIPART also offers this part with quote-based ordering - request pricing using the form on this page for volume quantities.
What can replace the KSE3055T?
You can replace the KSE3055T with pin-compatible TO-220-3 NPN transistors including the onsemi MJE3055T and MJE3055TG, the MJF3055/MJF3055G (isolated-package variant), the STMicroelectronics TIP3055T, the BD911, and the 2N6488, as listed in the el-component.com cross-reference. All share the same footprint and Base-Collector-Emitter pin order. For non-drop-in flexibility, any 60 V / 10 A NPN power BJT with adequate hFE at your operating current will function electrically.
Does the KSE3055T need a heatsink?
Yes, for collector currents above roughly 1 A the KSE3055T needs a heatsink. The collector tab of the TO-220 package is the primary thermal path, so bolt it to a heatsink with thermal paste and isolate it electrically if the collector node is not at ground. Estimate dissipation as IC x VCE at your operating point - for example, 5 A across 2 V is 10 W, far beyond free-air capability - and size the heatsink to keep junction temperature within the datasheet maximum with margin.

Technische Referenzdaten für KSE3055T – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the KSE3055T when you need a proven 60 V / 10 A NPN power BJT in a through-hole TO-220-3 footprint at commodity pricing - ideal for linear pass elements, relay and motor drivers, and class-AB audio outputs serviced in the field. Choose onsemi MJE3055T when distributor availability in your region is better, since it is electrically interchangeable and shares the identical pinout. Choose the MJF3055G when the heatsink must be at chassis potential, because its isolated package removes the mica washer step. Choose ST's TIP3055T for cross-brand second-sourcing on the same PCB footprint. Step up to the BD911 only if your design exceeds 60 V or needs 15 A capability - paying more for unused margin wastes BOM cost. Avoid this part for switching above ~50 kHz or where gate-drive simplicity matters; a MOSFET is the better tool there.

Vergleich mit Alternativen

Parameter Dieses Produkt MJE3055T MJF3055G TIP3055T BD911 2N6488
Package TO-220-3 TO-220-3 - same TO-220-3 (isolated) - same footprint TO-220-3 - same TO-220-3 - same TO-220-3 - same
Brand onsemi onsemi onsemi STMicroelectronics STMicroelectronics onsemi
Polarity NPN NPN NPN NPN NPN NPN
Mounting / Isolation Through Hole, tab live Through Hole, tab live Through Hole, fully isolated Through Hole, tab live Through Hole, tab live Through Hole, tab live

Wichtigste Unterscheidungsmerkmale

  • Gain specified at full 10 A load (vs. MJE3055T)
  • Guaranteed 2 MHz minimum fT (vs. TIP3055T)
  • Lower cost per unit (vs. BD911)

Designhinweise

The TO-220 collector tab is the dominant thermal path for the KSE3055T, so heatsink selection governs reliability. Estimated example: at 5 A collector current with 2 V VCE, dissipation is 10 W; if the datasheet junction-to-case resistance is on the order of a few C/W plus heatsink and interface resistances of 5-10 C/W total, junction rise reaches 75-125 C - verify against the datasheet Rtheta values and your worst-case ambient. Use thermal grease or a phase-change pad, and electrically isolate the tab with a mica/silpad washer if the collector is not at chassis ground. Derate dissipation linearly above 25 C ambient.

A frequent failure mode is undersized base drive: hFE falls at high collector current, and the datasheet specifies gain at IC = 10 A precisely because this is the region where beginners assume the small-signal hFE still holds. Design base current for forced beta of 5-10 in switching applications, otherwise the device operates in linear region, dissipates excessive power, and can fail within seconds. Also never omit the flyback diode when switching relays or motors - even a 60 V VCEO rating will not survive repeated unclamped inductive spikes from a multi-amp solenoid.

For through-hole TO-220 layouts, give the collector trace at least 2 mm width per ampere of continuous current (roughly 1 oz copper) or use copper pours on both layers stitched with vias. Place the base resistor close to the base pin to minimize the loop that can pick up noise and cause parasitic oscillation in emitter-follower configurations; a small base stopper resistor of 2.2-10 ohm improves stability in audio and high-current follower service. Keep the emitter sense/kelvin connection separate from high-current carries if you need accurate current regulation.

Compliance-Informationen

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Bleifrei
Unknown
Halogenfrei
Unknown
Konfliktmineralien
Unknown

Compliance status not stated in the provided web data; the MJE3055TG naming suggests a Pb-free sibling exists in the family. Verify RoHS/REACH status on the onsemi product page or certificate of conformance before export-controlled production.

Daten verifiziert am: 2026-10-21 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

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Verwandte Bauteile & Begriffe

onsemi Fairchild Semiconductor KSE3055T KSE3055 MJE3055T TIP3055T BD911 2N3055 KSH3055 NPN transistor bipolar junction transistor BJT power transistor TO-220 TO-220-3 through hole VCEO gain-bandwidth product VCE(sat) class-AB amplifier linear regulator relay driver RoHS general purpose switching
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