LT1910ES8 - 48V High-Side N-FET Driver, 8-SO | Analog Devices
Teilenummer: LT1910ES8 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $5.2 | $5,20 |
| 10 | $4.65 | $46,50 |
| 100 | $3.95 | $395,00 |
| 500 | $3.42 | $1.710,00 |
| 1.000 | $2.98 | $2.980,00 |
LT1910ES8 Übersicht
A high-side gate driver is a semiconductor circuit that level-shifts a low-side logic control signal to drive the gate of an N-channel MOSFET placed on the high side of a load, between the supply rail and the load. The category hierarchy is gate driver -> power management IC -> semiconductor. By using an N-channel MOSFET on the high side, designers achieve lower R_DS(on) and lower cost than an equivalent P-channel MOSFET. The LT1910ES8 belongs to this gate-driver product family, with the broader function of switching and protecting DC loads in automotive, industrial, and telecom systems.
Key features include an on-chip drain-current comparator that turns off the switch if load current exceeds a preset threshold, programmable delay and autorestart timing set by an external RC network, and a FAULT pin that asserts when the part enters protection. The internal charge pump maintains V_GS above the MOSFET threshold even at 100% duty cycle. Supply current is typically under 4 mA in normal switching and falls to a low microamp level in fault/shutdown.
The architecture combines a 48 V-rated DMOS charge-pump switcher, a precision sense comparator, and timing logic in a monolithic die. The integrated design eliminates the external boost capacitor and gate-drive resistor network that discrete high-side drivers require, simplifying PCB layout and reducing BOM cost by typically 4-6 components.
Typical applications include automotive load switching (lamps, solenoids, motors), industrial 24 V-48 V control, hot-swap / inrush limiting on plug-in cards, and battery protection in UPS and telecom -48 V systems. The device is especially suited to 12 V and 24 V automotive environments where inductive load transients and reverse-battery events are routine.
When designing with this part, place the SENSE resistor between SENSE and VIN using a low-inductance layout, and keep the RG/RT timing network close to the TIMER pin. The FAULT output is open-collector and requires a pull-up resistor to logic supply.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the LT1910ES8 that are not found in the standalone manufacturer datasheet.
Drop-in-Alternativen für LT1910ES8 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
LT1910ES8#PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
LT1910IS8
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
LT1910HS8
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
LT1910ES8 Grenzwerte & elektrische Eigenschaften
| Product Type | High-Side N-Channel MOSFET Gate Driver |
| Supply Voltage (operating) | 8 V to 48 V |
| Supply Voltage (transient, load dump) | 60 V |
| Ausgangskonfiguration | High-side, single output |
| Number of Drivers | 1 |
| Logic Input | Non-inverting (active-high IN) |
| Gate Drive Topology | Internal charge pump (no external cap) |
| Current Limit Programmability | Programmable via external SENSE resistor |
| Short-Circuit Protection | Yes (drain comparator) |
| Auto-Restart Timer | Programmable delay via external RC |
| Fault Flag Output | Open-collector FAULT pin |
| Betriebstemperaturbereich | -40 C to +85 C (industrial) |
| Gehäuse | 8-SOIC (S8), 3.90 mm body width |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (#PBF suffix indicates lead-free) |
| Lead-Free Finish | Yes (PBF suffix per DigiKey listing) |
LT1910ES8 Pin-Konfiguration
| Pin 1 | SENSE — Current sense input - connects to top of external sense resistor between VCC and drain of internal switch |
| Pin 2 | TIMER — Connect RC network to program fault delay and auto-restart period |
| Pin 3 | FAULT — Open-collector fault flag output; pulls low during overcurrent / short-circuit event |
| Pin 4 | IN — Logic input (non-inverting, active-high); drives GATE when high |
| Pin 5 | GND — Ground |
| Pin 6 | GATE — Gate drive output to external N-channel MOSFET gate |
| Pin 7 | SOURCE — Source of internal N-FET switch / return for SENSE |
| Pin 8 | VCC — Supply voltage input (8 V to 48 V operating, 60 V transient) |
Typische Anwendungen
LT1910ES8 ist geeignet für 6 Anwendungs: Automotive Load Switching, Industrial 24 V-48 V Solenoid / Valve Control, Hot-Swap / Inrush Current Limiting, Battery Protection (UPS / Telecom -48 V), DC Load Disconnect / Solid-State Relay, LED Lighting Driver Switch.
Automotive Load Switching
The LT1910ES8 is ideal for switching automotive 12 V loads such as lamps, solenoids, and motors from a low-side microcontroller. Its 8-48 V operating range with 60 V transient tolerance handles load-dump events on the 12 V bus, and the integrated charge pump fully enhances standard-threshold N-FETs without external capacitors. The programmable current limit and auto-restart timer protect against stalled-motor and short-circuit faults common in automotive wiring harnesses, reducing warranty returns.
Empfohlen
Industrial 24 V-48 V Solenoid / Valve Control
In industrial PLC and process-control systems, the LT1910ES8 drives 24 V or 48 V solenoid valves and actuators with built-in protection. The SENSE resistor enables precise current-limit programming per channel, while the open-collector FAULT output back-feeds a status LED or PLC digital input for diagnostics. The integrated charge pump saves PCB space in dense I/O modules, and the 60 V transient rating covers IEC 61131-2 surge events on industrial 24 V rails.
Empfohlen
Hot-Swap / Inrush Current Limiting
The LT1910ES8 functions as a hot-swap controller for plug-in cards on 24 V or 48 V backplanes. The programmable current limit and gradual gate turn-on (set by C_GATE) limit inrush current when a charged bulk capacitor is connected to a live bus, preventing connector arcing and bus-voltage dips. The FAULT output signals the system controller of a sustained overcurrent event for graceful shutdown. Compared to discrete solutions, the LT1910ES8 reduces the BOM by 4-6 components.
Empfohlen
Battery Protection (UPS / Telecom -48 V)
In telecom -48 V battery plants and UPS systems, the LT1910ES8 protects the battery string from short-circuit events and reverse-current conditions. Its 8-48 V operating range covers the full -48 V battery discharge profile, and the auto-restart timer latches off during sustained faults while allowing recovery after battery replacement. The integrated charge pump eliminates the external pump capacitor typically required for high-side P-FET alternatives, reducing PCB area and improving long-term reliability.
Empfohlen
DC Load Disconnect / Solid-State Relay
The LT1910ES8 replaces electromechanical relays in 12-48 V systems with a solid-state DC switch offering >10x longer life and silent switching. Programmable current limit protects downstream cabling from overcurrent, and the auto-restart timer automatically resumes operation after transient overloads clear. Typical applications include HVAC contactor replacement, battery isolation, and remote-controlled disconnect switches in industrial and renewable energy systems. The 60 V transient rating handles inductive kickback from DC motors and solenoids.
Empfohlen
LED Lighting Driver Switch
The LT1910ES8 efficiently switches LED strings in architectural, automotive, and industrial lighting where PWM dimming from a low-side MCU is required. The integrated charge pump drives standard-threshold N-FETs at the top of the LED string, eliminating the need for a high-side P-FET or external charge pump components. The programmable current limit protects against LED short faults, and the FAULT output back-feeds a thermal-foldback or diagnostic LED driver. Compared to discrete high-side P-FET solutions, R_DS(on) is typically 50% lower.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für LT1910ES8 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | LT1910ES8#PBF | LT1910IS8 | LT1910HS8 |
|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Supply Voltage (operating) | 8 V to 48 V | 8 V to 48 V | 8 V to 48 V | 8 V to 48 V |
| Transient Voltage Rating | 60 V | 60 V | 60 V | 60 V |
| Charge Pump | Internal (no external cap) | Internal (no external cap) | Internal (no external cap) | Internal (no external cap) |
| Current Limit | Programmable via SENSE resistor | Programmable via SENSE resistor | Programmable via SENSE resistor | Programmable via SENSE resistor |
| Auto-Restart Timer | Yes (programmable RC) | Yes (programmable RC) | Yes (programmable RC) | Yes (programmable RC) |
| Operating Temperature Range | -40 C to +85 C | -40 C to +85 C | Industrial extended | High-temp grade |
| RoHS / Lead-Free | Compliant (#PBF suffix) | Compliant (Pb-free) | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Fully integrated charge pump with no external capacitor (vs. IRS2301SPBF (Infineon half-bridge driver))
- Built-in short-circuit protection with auto-restart (vs. TPS1H100-Q1 (TI smart high-side switch))
- Open-collector FAULT output for diagnostic feedback (vs. MAX1614 (Maxim micropower switch))
Designhinweise
Place the SENSE resistor between the VCC pin and the SOURCE pin using a Kelvin (4-wire) layout to avoid ground-bounce-induced current-limit errors. Keep the trace from SENSE to the resistor short (<5 mm) and use a wide ground pour under the IC. The TIMER capacitor and resistor should be placed within 5 mm of the TIMER pin to avoid noise pickup that can cause false fault events. The GATE trace should be <25 mm to minimize parasitic inductance that may cause ringing and MOSFET V_GS overstress.
Estimated: At VCC=24 V, I_load=1 A, and a fully enhanced MOSFET with R_DS(on)=50 mOhm, the LT1910ES8 dissipates approximately (VCC - V_load) * I = ~13 W only if used in linear pass-through mode; in normal switching applications the LT1910ES8 itself dissipates <100 mW because the external MOSFET carries the load current. The 8-SOIC package has theta_JA of approximately 100 C/W on a 1 oz copper 1 square inch pad, giving a junction temperature rise of <10 C at 100 mW - well within the 85 C ambient industrial limit. For high ambient temperature (>60 C) operation, increase the copper pour to >2 square inches.
Three common design pitfalls: (1) Exceeding the 48 V continuous VCC rating - the part clamps transients to 60 V but does not regulate continuously above 48 V; (2) Forgetting the FAULT pull-up resistor - the open-collector output requires an external pull-up to a logic supply (typically 3.3 V or 5 V MCU rail); (3) Setting the SENSE resistor too low - if the voltage drop at maximum load is below the comparator threshold (typically 50-100 mV), the part will not detect the fault condition. Always verify the SENSE voltage at the maximum expected load current is at least 1.5x the comparator threshold voltage.
Compliance-Informationen
RoHS and lead-free compliance indicated by #PBF suffix per DigiKey listing. AEC-Q100 automotive qualification status not explicitly stated in available data; for automotive designs consult Analog Devices for AEC-Q100 qualified variants.
