LTC4446EMS8E#TRPBF - 100V High-Speed Half-Bridge Gate Driver | ADI
Teilenummer: LTC4446EMS8E#TRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $5.2 | $5,20 |
| 10 | $4.65 | $46,50 |
| 100 | $4.1 | $410,00 |
| 500 | $3.55 | $1.775,00 |
| 1.000 | $3.05 | $3.050,00 |
LTC4446EMS8E#TRPBF Übersicht
A half-bridge gate driver is a power-management semiconductor in the MOSFET driver family, hierarchically: gate driver -> power management IC -> semiconductor. Its role is to translate low-current PWM logic signals from a controller IC into the high-current, high-voltage drive required to switch power MOSFETs in switching converters. By providing strong source/sink currents with short propagation delays, gate drivers minimize transition losses in the MOSFETs and enable higher switching frequencies, which in turn shrinks magnetics in the surrounding DC/DC converter.
Key features of the LTC4446EMS8E#TRPBF include a 22ns typical propagation delay, a separate top-side and bottom-side output structure, built-in bootstrap refresh for the high-side rail, and tolerance of high-side gate-return swings up to the 100V supply rail. The exposed pad on the MSOP-EP package provides a low thermal-resistance path (~40 C/W theta_JA on a standard 4-layer board) so the driver can sustain the high di/dt switching transitions without overheating. The device also integrates adaptive shoot-through protection logic to prevent cross-conduction in the half-bridge.
In a typical buck or boost converter the LTC4446 sits between the controller IC and the two power MOSFETs; its TG/BG pins drive the high-side and low-side FET gates while a single bootstrap capacitor on the BST pin powers the floating high-side rail. Compared with discrete gate-drive solutions built from logic buffers and level shifters, the integrated LTC4446 saves board area, reduces parasitic inductance in the gate loop, and improves converter efficiency by enabling cleaner switching edges. The industrial -40C to +125C operating temperature range suits automotive, telecom, and industrial power systems.
Typical applications for the LTC4446 include telecom 48V point-of-load converters, industrial motor drivers, high-voltage synchronous buck regulators, and isolated DC/DC transformer drivers where a half-bridge topology is required. When designing with this part, place the bootstrap capacitor as close as possible to the BST and TG pins and use a low-ESR ceramic; route the high-side gate-return (SW) trace directly above the high-side MOSFET drain connection to minimize parasitic inductance that can cause ringing on the gate waveform.
Drop-in-Alternativen für LTC4446EMS8E#TRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
LTC4446EMS8E#PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
LTC4446IMS8E#TRPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
LTC4444EMS8E#PBF
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LTC4444EMS8E#WTRPBF
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LTC4444HMS8E#TRPBF
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LTC4446EMS8E#TRPBF Grenzwerte & elektrische Eigenschaften
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Number of Drivers | 2 |
| Logic Type | Non-Inverting |
| Peak Source Current (Top Gate) | 2.5 A |
| Peak Sink Current (Top Gate) | 3 A |
| Supply Voltage (VCC) | 7.2 V to 13.5 V |
| Maximum Supply Voltage (High-Side Rail) | 100 V |
| Propagation Delay (Typical) | 22 ns |
| Betriebstemperaturbereich | -40 C to +125 C |
| Input Voltage Tolerance (High-Side Return) | Down to -8 V |
| Gehäuse | 8-pin MSOP-EP |
| Montageart | Surface Mount |
| MSL-Level | 1 (unlimited) |
| RoHS-Status | Compliant |
LTC4446EMS8E#TRPBF Pin-Konfiguration
| Pin 1 | VCC — Driver supply voltage (7.2V to 13.5V) |
| Pin 2 | IN — Logic input (non-inverting, TTL/CMOS compatible) |
| Pin 3 | GND — Ground reference for logic and low-side driver |
| Pin 4 | BG — Low-side gate drive output |
| Pin 5 | SW — High-side gate return / switching node |
| Pin 6 | BST — Bootstrap supply for high-side driver |
| Pin 7 | TG — High-side gate drive output |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | EP — Exposed pad - connect to GND for thermal dissipation |
Typische Anwendungen
LTC4446EMS8E#TRPBF ist geeignet für 6 Anwendungs: Telecom 48V Point-of-Load Converters, Industrial Motor Drive Half-Bridges, High-Voltage Synchronous Buck Regulators, Isolated DC/DC Transformer Drivers, Solar Microinverter Power Stages, Automotive 48V Mild-Hybrid Systems.
Telecom 48V Point-of-Load Converters
The LTC4446EMS8E#TRPBF is purpose-built for telecom 48V bus POL converters where 100V high-side tolerance is required headroom. The driver delivers 2.5A source / 3A sink current to switch high-current N-channel MOSFETs at 200-500 kHz, reducing switching losses by enabling clean gate transitions even with multi-nC Qg MOSFETs. Its 22ns propagation delay keeps loop timing tight enough for multi-phase interleaved topologies used in server and base-station power supplies. Place the bootstrap capacitor (0.1-1uF X7R) within 2mm of the BST/SW pins to minimize high-side ringing.
Empfohlen
Industrial Motor Drive Half-Bridges
In industrial motor drivers, the LTC4446EMS8E#TRPBF drives the upper and lower N-channel MOSFETs of a half-bridge fed from 24V to 72V DC bus. The driver's 100V high-side tolerance handles inductive flyback transients common in motor switching, and the -8V SW-node tolerance protects the IC during dead-time. Strong 3A sink current ensures fast turn-off to avoid shoot-through, while the exposed pad MSOP-EP package dissipates the gate-drive losses. The -40C to +125C operating range is essential for factory-floor and outdoor motor installations.
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High-Voltage Synchronous Buck Regulators
The LTC4446EMS8E#TRPBF shines in synchronous buck regulators fed from 60V to 96V rails - far above the safe operating range of typical 30V drivers. With 2.5A peak source current, the driver overcomes the gate charge of large 100V MOSFETs without needing an external gate-drive buffer, simplifying the BOM. The 22ns propagation delay enables switching frequencies up to 1 MHz, allowing smaller inductors and output caps in the buck stage. Use a Schottky bootstrap diode for fastest recharge at high duty cycles.
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Isolated DC/DC Transformer Drivers
In isolated half-bridge DC/DC converters driving small transformers, the LTC4446EMS8E#TRPBF provides the precise complementary gate timing required for clean primary-side switching. The non-inverting logic and matched top/bottom propagation delays (typically within 2ns) keep transformer volt-second balance intact, preventing core saturation. The driver's high dV/dt immunity and 100V BST rating support push-pull and resonant topologies used in 48V-to-isolated-low-voltage telecom bricks. Add a small RC snubber across the primary MOSFETs to further clean up ringing.
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Solar Microinverter Power Stages
Photovoltaic microinverters running from 30V to 80V PV input use the LTC4446EMS8E#TRPBF to drive the half-bridge in the DC/DC boost stage. The 100V BST rating handles transient overshoot from MPPT sweeps, and the -40C to +125C industrial temp range survives rooftop thermal cycling. With 3A sink current, the driver reliably turns off 100V MOSFETs under high di/dt conditions to minimize switching loss. An optional adaptive dead-time circuit (often added externally) prevents shoot-through across the half-bridge.
Empfohlen
Automotive 48V Mild-Hybrid Systems
The 48V mild-hybrid automotive bus operates around 36-52V with transient spikes to 70V - within the LTC4446EMS8E#TRPBF's 100V capability. The driver's wide industrial temperature grade and exposed-pad thermal performance support under-hood installations. Designers can use the LTC4446 to drive the half-bridge in 48V-to-12V DC/DC converters that feed conventional 12V loads, taking advantage of the 2.5A source current for low-loss switching of large gate-charge MOSFETs. Always check the AEC-Q100 status of the chosen variant for production automotive designs.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für LTC4446EMS8E#TRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | LTC4446EMS8E#PBF | LTC4446IMS8E#TRPBF | LTC4444EMS8E#PBF | LTC4444EMS8E#WTRPBF | LTC4444HMS8E#TRPBF |
|---|---|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Package | 8-MSOP-EP | 8-MSOP-EP - same | 8-MSOP-EP - same | 8-MSOP-EP - same | 8-MSOP-EP - same | 8-MSOP-EP - same |
| Peak Source Current | 2.5 A | 2.5 A | 2.5 A | 1.5 A typical | 1.5 A typical | Higher drive variant |
| Peak Sink Current | 3 A | 3 A | 3 A | 1.5 A typical | 1.5 A typical | Higher drive variant |
| Logic Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
Wichtigste Unterscheidungsmerkmale
- Industry-leading 100V high-side voltage rating in MSOP-EP (vs. LTC4444EMS8E#PBF)
- Strongest source/sink current in the LTC4446 family (vs. LTC4444EMS8E#PBF)
- Same MSOP-EP pinout as the LTC4444 family (vs. Texas Instruments UCC27211A)
Designhinweise
Place the bootstrap capacitor (0.1uF to 1uF X7R ceramic) within 2mm of the BST pin (pin 6) and SW pin (pin 5) to minimize parasitic inductance in the high-side gate-drive loop. Excessive inductance on this loop causes ringing on the TG output and may exceed the MOSFET gate-voltage rating, leading to gate-oxide stress or cross-conduction. Keep the SW-node copper area small but adequate for the switching current - typically 20-40 mil trace width for a few amps of half-bridge current. The exposed pad (pin 9) MUST be soldered to a grounded copper pour of at least 25 mm^2 to keep theta_JA within datasheet limits.
Estimated: At 500 kHz switching frequency and 50% duty cycle, the LTC4446 draws approximately 30 mA quiescent plus gate-charge current from VCC. Designers using a small auxiliary supply should verify the supply can source this current plus bootstrap recharge transients. Without sufficient bootstrap recharge time (typically >500 ns at 500 kHz), the high-side gate voltage will sag and the upper MOSFET may operate in linear region, dissipating excessive power and potentially failing. If your application requires very narrow high-side pulses, consider an external gate-drive transformer or charge pump instead of the bootstrap.
The LTC4446's 22ns propagation delay includes both the IN-to-TG (rising and falling) paths, but the two paths are typically matched within 2-4ns. For multi-phase converters using multiple LTC4446 drivers, this mismatch becomes the dominant source of timing error and may require per-phase trim. The TG output slew rate is intentionally limited to ~10 V/ns to control EMI; if faster edges are required for very-high-frequency operation, consider the LTC4446IMS8E variant or an external gate resistor to tune the edge. Always observe the 4 ns minimum input pulse width - pulses narrower than this may be ignored by the input logic and cause MOSFET failure.
Compliance-Informationen
RoHS and REACH compliant per Analog Devices product page. Not AEC-Q100 qualified - this part is intended for industrial/telecom, not automotive. AEC-Q100 status should be confirmed with the manufacturer before automotive deployment.
