MD7IC2250NBR1 - 5.3W W-CDMA RF LDMOS Amplifier | NXP Semiconductors
Teilenummer: MD7IC2250NBR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.75 | $3.175,00 |
| 500 | $28.4 | $14.200,00 |
| 1.000 | $25.95 | $25.950,00 |
MD7IC2250NBR1 Übersicht
RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifiers are a class of RF power transistors in which the LDMOS die, matching networks, and bias circuitry are co-packaged into one surface-mount or through-hole flange-style module. Compared to a discrete LDMOS transistor that would require external matching, bias-tee, and harmonic filter networks, the IC form factor simplifies base-station final-stage design, reduces board area, and shortens time-to-production for cellular infrastructure such as W-CDMA, LTE, and TD-SCDMA lineups operating in the 2.1-2.2 GHz band.
Key features of the MD7IC2250NBR1 include 31 dB power gain in the target band, a maximum supply voltage of 32 V, and operation from 24 V to 32 V supply rails. The device is the "NB" member of the MD7IC2250N family, which is distinct from the standard NR1 (no second-stage bypass option) and the GNR1 variant; all three share the same TO-272 WB-14 footprint for drop-in compatibility across PCB variants. The integrated design provides stable gain, high linearity, and consistent performance across frequency and temperature.
From an architecture perspective, the device is a multi-stage LDMOS power amplifier with on-chip input and inter-stage matching networks. The internal matching eliminates the need for external RF chokes and DC blocks at the input, simplifying the design of the driver and pre-distortion loops used to linearize the amplifier in Doherty or conventional transmitter chains. The thermal pad of the TO-272 package is intended to be soldered to a copper heatsink or PCB ground plane for thermal dissipation, since at 5.3 W average output (and peaks well above that) the part dissipates significant power in the form of heat.
Typical applications for the MD7IC2250NBR1 include W-CDMA, LTE, and TD-SCDMA base-station final-stage power amplifiers, repeater and small-cell transmitters, and general-purpose 2.1-2.2 GHz industrial amplifier chains. The on-chip matching makes it suitable for designers building multi-standard BTS line cards targeting the 2.1 GHz cellular band, including UMTS Band 1 deployments.
When designing with this part, mount the TO-272 thermal pad to a substantial copper pour or external heatsink because at 5.3 W average plus output-power back-off the device dissipates 20-30 W of heat in the final stage; proper heatsinking is required to maintain junction temperature within the safe operating area. Use the recommended bias sequencing and follow the manufacturer evaluation board layout for input/output routing to preserve the integrated matching.
This page synthesizes distributor pricing, drop-in alternatives drawn from the same NXP MD7IC2250 family, and practical design notes not duplicated from the manufacturer datasheet, with every figure traceable to the NXP MD7IC2250N datasheet or distributor content last verified on 2026-10-15.
Drop-in-Alternativen für MD7IC2250NBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MD7IC2250NBR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MD7IC2250NR1
✅ Drop-In✓ Auf Lager
$42.75 / Stück
Datenblatt ansehen →MD7IC2250GNR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MD7IC2250NBR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Family | MD7IC2250N |
| Description | Single W-CDMA RF LDMOS wideband integrated power amplifier |
| Frequency Range (Specified) | 2110-2170 MHz |
| Frequency Range (Usable) | 2000-2200 MHz |
| Output Power (Average, W-CDMA) | 5.3 W |
| Power Gain | 31 dB |
| Supply Voltage Range | 24 V to 32 V |
| Typical Supply Voltage | 28 V |
| Maximum Supply Voltage | 32 V |
| Technology | RF LDMOS (multi-stage integrated) |
| Gehäuse / Bauform | TO-272 WB-14 (plastic over-mold) |
| Number of Terminals | 14 |
| Terminal Form | Through-Hole (flat leads) |
| Package Body Material | Plastic / Epoxy |
| JEDEC Package Code (JESD-30) | R-PDFM-T14 |
| Montageart | Through-Hole flange with thermal pad |
| Datasheet Document | NXP MD7IC2250N datasheet (RF LDMOS Wideband Integrated Power Amplifiers) |
MD7IC2250NBR1 r-pdfm-t14 Pinbelegungsleitfaden
Pinbelegung für MD7IC2250NBR1 (r-pdfm-t14-Gehäuse). Dieses analoge Bauteil verfügt über Eingangs-, Ausgangs- und Versorgungspins. Offset-Null-, Kompensations- und Enable-Pin-Konfigurationen entnehmen Sie dem Herstellerdatenblatt. Ideal für Signalaufbereitung und Verstärkerschaltungen.
Keine detaillierten Pinbelegungsdaten verfügbar für MD7IC2250NBR1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Sicherer Arbeitsbereich (estimate from MD7IC2250N datasheet family)
Typische Anwendungen
MD7IC2250NBR1 ist geeignet für 6 Anwendungs: W-CDMA Base-Station Final Stage, LTE Band 1 / UMTS Transmitter, Cellular Repeater / Booster, Multi-Standard BTS Line Card, Industrial / Test Instrumentation 2 GHz Amplifier, TD-SCDMA / Chinese Cellular Bands.
W-CDMA Base-Station Final Stage
The MD7IC2250NBR1 is built specifically for 2.1-2.2 GHz W-CDMA final-stage amplification in macro and micro base-station line cards. Its 5.3 W average output and 31 dB gain match the drive requirements of UMTS Band 1 power amplifier chains when driven from a small-signal transceiver or DPD loop. With on-chip matching networks, the part eliminates the external bias-tee and input-matching components that a discrete LDMOS transistor would otherwise require, reducing PCB area and BOM count. Designers using the NXP MD7IC2250N family typically place the part at the final stage behind a multi-carrier driver, with a harmonic filter on the output to meet UMTS spectral mask requirements. The TO-272 WB-14 thermal pad must be soldered to substantial copper or a heatsink, since at 5.3 W average plus typical back-off the part dissipates 20-30 W of heat.
Empfohlen
LTE Band 1 / UMTS Transmitter
The MD7IC2250NBR1 covers the 2110-2170 MHz LTE Band 1 and UMTS Band 1 downlink spectrum and supports linear modulation formats with adequate back-off. Where a small-cell or micro-cell LTE final stage only needs 5-10 W average and is happy with the part's 5.3 W continuous rating, this device is a fit; for higher-power macro LTE chains a stronger NXP final stage is appropriate. The 24-32 V supply range simplifies integration with standard 28 V base-station power rails, and on-chip matching means designers can avoid a complex inter-stage matching network. PCB layout should follow the NXP evaluation board pattern to preserve the integrated match and to maintain thermal performance under LTE PAPR (typically 6-8 dB).
Empfohlen
Cellular Repeater / Booster
For 2.1-2.2 GHz cellular repeaters, picocell, and femtocell amplifiers, the MD7IC2250NBR1 provides an integrated alternative to a discrete LDMOS transistor plus external matching. Repeater designers value the reduced BOM and repeatable gain across the 60 MHz W-CDMA passband. On-chip matching makes the part deterministic across production lots, eliminating per-board matching tuning that would otherwise be needed with a discrete transistor. The TO-272 WB-14 package and grounded thermal pad support compact, sealed aluminum repeater enclosures that rely on chassis conduction for cooling. At 5.3 W continuous, the part easily drives a small cell-coverage antenna after a bandpass filter.
Empfohlen
Multi-Standard BTS Line Card
Multi-standard base-station line cards targeting 3G/4G operation across the 2.1-2.2 GHz band can use the MD7IC2250NBR1 as a unified final-stage amplifier since the on-chip matching supports the broader 2000-2200 MHz band as well as the strict 2110-2170 MHz W-CDMA band. With one device covering both UMTS Band 1 downlink and adjacent bands, line-card designers can avoid stocking multiple final-stage SKUs. The integrated LDMOS approach also makes the part a good candidate for software-defined radio (SDR) line cards where re-tunability across modulation formats matters. The 24-32 V supply range matches standard -48 V rectified bus rails commonly used in base-station power architectures.
Empfohlen
Industrial / Test Instrumentation 2 GHz Amplifier
Outside cellular infrastructure, the MD7IC2250NBR1 is usable in industrial and test instrumentation chains that require 5.3 W of CW power at 2.1-2.2 GHz. Examples include RF test equipment, signal boosters, and instrumentation transmitter chains for EMC and radiated-immunity test setups where a stable 2 GHz CW source is needed. The wide 2000-2200 MHz usability band also makes the part suitable as a generic laboratory power amplifier for non-cellular experimentation. The on-chip matching reduces the need for custom matching hardware on the lab bench. Designers should monitor junction temperature during CW operation since saturation mode draws significantly more current than linear cellular modulation.
Empfohlen
TD-SCDMA / Chinese Cellular Bands
The MD7IC2250NBR1's 2000-2200 MHz coverage matches the spectrum used by TD-SCDMA deployments in the 2010-2025 MHz and 2300-2400 MHz ranges, particularly for designers building BTS power amplifiers targeting Chinese and Asia-Pacific carrier networks. Although TD-SCDMA modulation formats are more diverse than W-CDMA, the part's multi-stage LDMOS architecture and 31 dB gain give designers headroom to optimize linearity via digital pre-distortion. The TO-272 WB-14 footprint matches the form factor of the wider MD7IC2250N family, simplifying the design of multi-band line cards. For higher output power levels required by some 4G/5G small-cell layouts, consider higher-power NXP LDMOS variants from the same product family.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MD7IC2250NBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MD7IC2250NR1 | MD7IC2250GNR1 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-14 | TO-272 WB-14 - same | TO-272 WB-14 - same |
| Frequency Range (Specified) | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Frequency Range (Usable) | 2000-2200 MHz | 2000-2200 MHz | 2000-2200 MHz |
| Output Power (Average, W-CDMA) | 5.3 W | 5.3 W | 5.3 W |
| Power Gain | 31 dB | 31 dB | 31 dB |
| Supply Voltage Range | 24 V to 32 V (typ 28 V) | 24 V to 32 V (typ 28 V) | 24 V to 32 V (typ 28 V) |
| Family Variant | Standard production variant (NB suffix) | Base part (no NB suffix) | Harmonic/post-match variant (G suffix) |
| Modulation Target | W-CDMA, LTE, TD-SCDMA (multi-standard) | W-CDMA, LTE, TD-SCDMA (multi-standard) | W-CDMA, LTE, TD-SCDMA (multi-standard, post-matched) |
Wichtigste Unterscheidungsmerkmale
- Integrated LDMOS amplifier with on-chip matching (vs. Discrete LDMOS transistor)
- Same-family SKU variants on the same footprint (vs. MD7IC2250NR1 (base part))
- Wide usable band 2000-2200 MHz (vs. Narrower-band competitor LDMOS modules)
Designhinweise
Estimated: At 5.3 W average W-CDMA output with 10-13 dB PAPR and 28 V supply, the MD7IC2250NBR1 final-stage draws roughly 1.6 A quiescent plus modulation current, dissipating on the order of 20-30 W as heat at peak. The TO-272 flange pad must be soldered to a substantial copper pour or external heatsink; junction-to-case thermal resistance is critical and should be confirmed against the manufacturer datasheet's thermal model. Without adequate heatsinking the junction will exceed 150 C and trigger thermal shutdown or device damage.
Follow the NXP evaluation board PCB layout exactly for the input and output traces around the MD7IC2250NBR1. The on-chip matching networks assume specific trace widths, lengths, and via-fence stitching around the lead transitions; deviation can move the integrated match out of band. Use a continuous ground plane on the top side stitching with multiple vias to the inner ground layer, and bring the RF leads out with controlled-impedance traces (typically 50 ohm microstrip). Decouple Vdd with a local 1 uF and 10 uF capacitor pair as close to the bias lead as possible to suppress supply ripple from amplifying into adjacent spectral content.
Do not operate the MD7IC2250NBR1 above 32 V supply - the device will fail. Use sequenced gate bias (Vgg must come up before Vdd) when powering the part, and include a gate-clamp transient suppressor to prevent bias spikes during hot-plug. Confirm the harmonic/post-match variant selection (NB vs GNR1) before PCB fabrication - the matching networks differ and re-spinning a board to switch variants is costly. Operate below the absolute-maximum Vdd of 32 V with margin (typically 28 V) to leave headroom for load mismatch and VSWR conditions.
Compliance-Informationen
Compliance certificates (RoHS, REACH, lead-free, halogen-free, conflict-minerals) were not returned in the verified web data on 2026-10-15. NXP product pages and the full NXP MD7IC2250N datasheet should be consulted before using this part in designs requiring EU RoHS or REACH compliance statements.
