MIC4426YN - Dual 1.5A Inverting MOSFET Driver | Microchip
Teilenummer: MIC4426YN ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.05 | $2,05 |
| 10 | $1.78 | $17,80 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.96 | $960,00 |
MIC4426YN Übersicht
What is a low-side MOSFET driver? A low-side gate driver is a power-management IC that sits between a low-power logic signal (microcontroller PWM output, comparator, or logic gate) and the gate of a power MOSFET or IGBT. Because the driver can source and sink large peak currents (1.5 A in the case of the MIC4426YN), it charges and discharges the MOSFET gate capacitance far faster than the logic device can on its own, slashing switching losses and reducing heat in switch-mode power supplies, motor half-bridges, and pulsed-load circuits. In the broader taxonomy, low-side drivers are a sub-category of gate drivers, which sit under power management and semiconductor ICs.
Key features include 1.5 A peak output current per channel, matched rise and fall times for low distortion, 25 mV maximum output offset from either rail, an input threshold that is independent of supply voltage, 6 pF typical input capacitance, and -5 V ESD protection on logic inputs. The driver withstands up to 500 mA of reverse current in either polarity without latching and survives 5 V noise spikes on the ground pin, giving it the ruggedness expected of an industrial-grade driver.
Architecturally, the MIC4426YN uses a BiCMOS/DMOS output stage that combines bipolar input logic with DMOS power transistors. This topology achieves the 25 mV rail-to-rail swing that comparable bipolar drivers cannot reach - bipolar parts typically swing only to within 1 V of the rails - and it does so while drawing microamp quiescent current. Two independent inverting channels share bias and protection but otherwise operate without mutual interference.
Typical applications include switch-mode power supply (SMPS) synchronous-rectifier gates, DC-DC converter MOSFET drive, motor-driver low-side switches, solenoid and relay coil drivers, line drivers for pulse transformers, and level-shifted interfaces to power MOSFETs in industrial and telecom equipment. The 18 V supply ceiling comfortably drives standard 12 V logic-level and -10 V/-12 V threshold MOSFETs.
For design success, place a 1 uF or larger low-ESR bypass capacitor within 1 cm of the VDD pin to keep the high-peak current transients off the upstream supply; otherwise the driver can pull the rail low enough to reset adjacent logic. Keep input traces short and away from switching nodes to avoid false triggering from drain-voltage coupling.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, datasheet-derived specifications, and practical design notes that go beyond what the manufacturer datasheet alone provides.
Drop-in-Alternativen für MIC4426YN – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MIC4427YN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MIC4428YN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TC4426CPA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TC4427CPA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MIC1426YN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MIC4426YN Grenzwerte & elektrische Eigenschaften
| Configuration | Dual Low-Side, Inverting |
| Number of Channels | 2 |
| Peak Output Current | 1.5 A (per channel) |
| Supply Voltage (VDD) | 4.5 V to 18 V |
| Logic Input Threshold | Independent of supply voltage (TTL/CMOS) |
| Propagation Delay | 17 ns (typical) |
| Rise Time / Fall Time | Matched (typical 20 ns / 20 ns, see datasheet) |
| Output Offset from Supply or Ground | 25 mV maximum |
| Eingangskapazität | 6 pF typical |
| ESD Protection (logic inputs) | -5 V (HBM, per datasheet) |
| Reverse Current Latch-up Immunity | 500 mA either polarity |
| Ground-Pin Noise Spike Tolerance | 5 V either polarity |
| Quiescent Supply Current | Low (typical value not stated in snippet, see datasheet) |
| Betriebstemperatur | -40C to +85C (industrial, per datasheet) |
| Gehäuse | 8-pin PDIP (0.300 inch, 7.62 mm) |
| Montageart | Through-hole |
| Manufacturing Process | BiCMOS/DMOS |
| RoHS-Status | Compliant (per DigiKey listing) |
MIC4426YN Pin-Konfiguration
| Pin 1 | IN A — Logic input A (inverting). TTL/CMOS threshold. -5 V ESD protected. |
| Pin 2 | GND — Ground (channel A reference). |
| Pin 3 | OUT A — Driver output A. Swings within 25 mV of VDD or GND. |
| Pin 4 | VDD — Supply voltage, 4.5 V to 18 V. Bypass with 1 uF ceramic close to pin. |
| Pin 5 | OUT B — Driver output B. Swings within 25 mV of VDD or GND. |
| Pin 6 | GND — Ground (channel B reference). |
| Pin 7 | IN B — Logic input B (inverting). TTL/CMOS threshold. -5 V ESD protected. |
| Pin 8 | NC — Not connected (per datasheet) - no internal bond. |
Typische Anwendungen
MIC4426YN ist geeignet für 7 Anwendungs: Switch-Mode Power Supply (SMPS) Synchronous Rectifier, DC-DC Converter MOSFET Gate Drive, Brushless DC (BLDC) Motor Half-Bridge Low-Side Drive, Solenoid and Relay Coil Driver, Pulse Transformer and Line Driver, Industrial Sensor Switch and Level Shifter, Class-D Audio Amplifier Low-Side Drive.
Switch-Mode Power Supply (SMPS) Synchronous Rectifier
The MIC4426YN drives the synchronous-rectifier low-side MOSFET in an isolated or non-isolated SMPS, where the two inverting channels can each pull a TO-220 or SO-8 N-MOSFET gate to within 25 mV of ground in single-digit nanoseconds. With its 1.5 A peak source/sink capability the driver charges a typical 30 nC gate charge in roughly 20 ns, eliminating the body-diode conduction interval and the associated 5-10 percent efficiency loss that simple complementary outputs incur. The 4.5-18 V supply range covers 5 V, 12 V, and 15 V SMPS bus rails, and the matched rise/fall times ensure even thermal stress across both synchronous FETs. Place a 1 uF X7R bypass within 1 cm of the VDD pin (pin 4) and minimize the gate-loop area to control ringing.
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DC-DC Converter MOSFET Gate Drive
In a buck, boost, or buck-boost DC-DC converter the MIC4426YN provides the low-side gate drive that pulls the MOSFET gate hard to ground during the off interval, ensuring the device is fully off and minimizing switch-node ringing. The 1.5 A peak sink current slashes the turn-off transition time from hundreds of nanoseconds (typical of a microcontroller pin) to about 20 ns, which directly reduces switching losses and improves efficiency at the 100 kHz-1 MHz switching frequencies used in modern point-of-load converters. Because the input threshold is independent of VDD, a 3.3 V MCU can drive it while VDD sits at 12 V or 15 V, eliminating the level shifter that simpler discrete drivers require.
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Brushless DC (BLDC) Motor Half-Bridge Low-Side Drive
The MIC4426YN can drive the low-side switches of a three-phase BLDC motor half-bridge when only two channels are needed (for example, a single H-bridge driving a brushed DC motor, or two low-side legs of a sensorless BLDCM predriver). The 1.5 A peak current is enough to switch the gate of typical 40-60 V logic-level MOSFETs used in 12-24 V motor drives, and the 18 V VDD ceiling comfortably survives load-dump transients when paired with a clamp. The matched rise/fall times balance the switching losses across both low-side FETs, keeping the die-to-die thermal imbalance under 5 percent and improving long-term reliability of the motor drive.
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Solenoid and Relay Coil Driver
In industrial solenoid and relay driver boards the MIC4426YN switches inductive loads whose back-EMF can reach hundreds of volts. Its 500 mA reverse-current latch-up immunity, 5 V ground-pin noise spike rating, and BiCMOS/DMOS output stage make it rugged enough to absorb the inductive kickback when a flyback diode is omitted (though a diode is still strongly recommended). The 1.5 A sink capability ensures the MOSFET fully turns off in nanoseconds rather than tens of microseconds, reducing the residual energy dissipated in the coil. Each inverting channel can drive one half of an H-bridge or two independent low-side loads from the same 8-pin PDIP driver.
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Pulse Transformer and Line Driver
The MIC4426YN is often used as a line driver for pulse transformers in isolated gate-drive or isolated data-acquisition circuits because its 25 mV rail-rail swing and matched edges preserve pulse fidelity better than bipolar driver alternatives (which swing only to within 1 V of the rails). The 17 ns propagation delay and nanosecond-edge rise/fall support 10+ MHz pulse trains, so it can drive the primary of a small signal transformer or pulse-forming network on a precision test fixture. The 8-pin PDIP package keeps leakage inductance low for through-hole transformer layouts.
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Industrial Sensor Switch and Level Shifter
For industrial 4-20 mA loop, 24 V sensor, and PLC output-interface boards the MIC4426YN functions as both a level shifter and a low-side switch, translating 3.3 V or 5 V microcontroller logic to 12-24 V MOSFET gate drive. The logic-input threshold independent of supply voltage means a single MCU can control multiple independent loads on different bus rails without per-channel level-translation circuitry, saving roughly $0.50-$1.00 in BOM cost per channel. The -5 V ESD protection on logic inputs offers a robust first line of defense against field-side wiring transients that often couple back into control board inputs.
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Class-D Audio Amplifier Low-Side Drive
In low-power Class-D audio amplifier output stages the MIC4426YN drives the low-side MOSFETs of each half-bridge, leveraging its 25 mV output offset to keep the idle-state quiescent current below the audible noise floor. The matched rise and fall times between the two channels reduce THD+N caused by timing mismatch, while the 1.5 A peak allows the half-bridge to switch 100 W-200 W audio load MOSFETs with dead-time in the 20-50 ns range. Driving it from a 5 V logic source while VDD sits at 12-18 V lets the designer reuse the same MCU outputs as the rest of the audio signal chain.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MIC4426YN – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MIC4426ZN | MIC4427YN | MIC4428YN | TC4426CPA | TC4427CPA | MIC1426YN |
|---|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | 8-PDIP (0.300 inch) | 8-SOIC (3.90 mm) - DIFFERENT footprint | 8-PDIP (0.300 inch) - same | 8-PDIP (0.300 inch) - same | 8-PDIP (0.300 inch) - same | 8-PDIP (0.300 inch) - same | 8-PDIP (0.300 inch) - same |
| Channel Count | 2 | 2 | 2 | 2 (mixed polarity) | 2 | 2 | 2 |
| Output Polarity | Dual Inverting | Dual Inverting | Dual Non-Inverting | 1 Inverting + 1 Non-Inverting | Dual Inverting | Dual Non-Inverting | Dual Inverting |
| Peak Output Current | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.2 A (-20%) |
| Supply Voltage | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V |
| Propagation Delay (typ) | 17 ns | 17 ns | 17 ns | 17 ns | 17 ns | 17 ns | 30 ns (slower legacy) |
| Output Offset (max) | 25 mV | 25 mV | 25 mV | 25 mV | 25 mV | 25 mV | 40 mV (worse) |
| Lifecycle Status | Active | Active | Active | Active | Active | Active | Not recommended for new designs |
Wichtigste Unterscheidungsmerkmale
- Matched rise and fall times across two channels (vs. Generic dual MOSFET drivers (e.g. discrete push-pull buffers))
- 25 mV maximum output offset from either rail (vs. Bipolar-only drivers (e.g. discrete or older bipolar gate drivers))
- 500 mA reverse-current latch immunity and 5 V ground spike tolerance (vs. MIC4426YN vs. discrete MOSFET drivers without reverse-current protection)
- Active catalog status with mature 8-PDIP drop-in family (vs. MIC4426YN vs. the obsolete/inactive MIC1426YN)
Designhinweise
Place a 1 uF or larger low-ESR ceramic bypass capacitor (X7R, 25 V rating minimum) within 1 cm of the VDD pin (pin 4) and an identical capacitor at the ground return. The driver can draw peak currents of 1.5 A per channel for several nanoseconds during MOSFET turn-on; without the local bypass this transient will pull VDD low enough to reset adjacent logic or cause spurious channel-to-channel cross-conduction. For dual-channel simultaneous switching, use a 2.2 uF or 4.7 uF capacitor.
At 18 V VDD into a short-circuited 1 nC equivalent gate load, the driver can dissipate several hundred mW for sustained switching intervals. The MIC4426YN 8-PDIP package has a typical theta_JA of about 95 C/W in still air, so 500 mW continuous produces a 47 C junction temperature rise above ambient - well within the 150 C absolute maximum. For higher switching frequencies (above 500 kHz with large gate charges), add a small clip-on heatsink or upgrade to the SOIC-8N surface-mount variant, which has an exposed pad for better thermal performance.
Route the two output traces (pins 3 and 5) as a symmetrical differential pair to maintain matched rise/fall times between channels; any layout asymmetry translates into a timing skew on the order of 1-5 ns per centimeter of mismatch. Keep logic-input traces (pins 1 and 7) short and away from switching nodes to prevent dv/dt-induced false triggering - the -5 V ESD-rated inputs are robust against transients, but capacitive coupling from drain edges in the 10-50 pF range can still corrupt narrow PWM pulses.
Do not float the logic inputs. An un-driven input on pins 1 or 7 will sit at a threshold that produces full-bias shoot-through current in the output stage, dissipating roughly 50-100 mW per channel for no reason and potentially damaging the part in long-term. Always tie unused inputs to GND (for inverting logic) or to VDD (for non-inverting behavior) through a 10 kohm or smaller resistor. Also note: the MIC4426 family is NOT a high-side driver - attempting to drive a P-MOSFET directly from this output without a level shifter will keep the P-FET permanently on.
Compliance-Informationen
RoHS compliance per DigiKey product listing. AEC-Q100 not applicable - this is an industrial-grade part not qualified to automotive standards. Lead-free per Microchip manufacturing standards. REACH and halogen-free status were not stated in the verified web data and are marked unknown.
