MP8020GQV-Z - IEEE 802.3af/at/bt PoE PD Controller | MPS
Teilenummer: MP8020GQV-Z ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
MP8020GQV-Z Übersicht
A PoE powered device interface controller is the front-end power management IC that sits between the Ethernet cable and the isolated DC/DC converter inside a powered device. Within the power management IC hierarchy, it belongs to the family of hot-swap and power-path controllers: it safely negotiates power with the PoE power sourcing equipment (PSE), classifies the power class, and limits inrush current when the 48V-class input rail connects to the downstream converter. The MP8020 performs this role while integrating the pass element, reducing external component count.
Key features include full IEEE 802.3af (PoE), 802.3at (PoE+) and 802.3bt compliance, an internal 100V-rated hot-swap MOSFET that eliminates the need for a discrete external pass device in typical designs, and a GATE1 driver that supports an external low-RDS(ON) MOSFET for high-power designs. The device also provides configurable inrush current limiting during start-up and operational current limiting once the internal MOSFET is fully enhanced.
Architecturally, the MP8020 integrates the detection, classification and current-control functions required by the IEEE 802.3 standard, and adds automatic maintain power signature (MPS) handling so the connected PSE keeps power applied during low-load intervals. A power good (PG) output enables controlled enable of the downstream DC/DC converter, supporting clean power sequencing.
Typical applications include IP security cameras, wireless access points, VoIP phones, network switches and other Ethernet-powered endpoints that must draw power from the data cable under 802.3af/at/bt. The 100V internal MOSFET rating provides margin against PoE transients.
Design consideration: for high-power 802.3bt designs, use the GATE1 driver with an external low-RDS(ON) MOSFET to reduce conduction losses; size the inrush limit so the downstream bulk capacitor charges without tripping the operating current limit.
This page synthesizes distributor availability data, the MPS product information, and practical design notes not found in the manufacturer datasheet alone. Pricing and inventory as of 2026-10-19.
Drop-in-Alternativen für MP8020GQV-Z – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MP8020GQV
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MP8020GQV-P
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MP8020GQV-Z Grenzwerte & elektrische Eigenschaften
| Funktion | PoE Powered Device (PD) Interface Controller |
| Compliance | IEEE 802.3af, 802.3at (PoE+), 802.3bt |
| Kanäle | 1 |
| Internal Hot-Swap MOSFET Voltage Rating | 100 V |
| Detection | Yes (IEEE 802.3 detection) |
| Classification | 5-event classification |
| Input Current Control | Yes (IIN control) |
| Inrush Current Limiting | Configurable during start-up |
| Operating Current Limiting | Yes (when internal MOSFET fully on) |
| External MOSFET Gate Driver | GATE1 driver for external low-RDS(ON) MOSFET |
| Power Good Signal | Yes (PG output for downstream DC/DC enable) |
| Maintain Power Signature | Automatic MPS |
| Gehäuse | 18-QFN (3x5 mm) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| MSL-Level | 1 |
MP8020GQV-Z 18-qfn (3x5 mm) Pinbelegungsleitfaden
Pinbelegung für MP8020GQV-Z (18-qfn (3x5 mm)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für MP8020GQV-Z.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MP8020GQV-Z ist geeignet für 6 Anwendungs: IP Security Cameras, Wireless Access Points, VoIP Phones, Network Switches and Midspans (PD-side ports), Industrial IoT Sensors and Controllers, PoE Lighting and LED Drivers.
IP Security Cameras
IP surveillance cameras are the classic PoE powered device: power and data arrive over one Ethernet cable, and the camera must negotiate its power class before enabling its image sensor, IR illuminators and heater elements. The MP8020GQV-Z fits this application because its IEEE 802.3af/at/bt compliance covers the full range of camera power classes, and 5-event classification lets high-power PTZ or outdoor cameras draw the elevated budgets of 802.3bt. The internal 100V hot-swap MOSFET absorbs PoE cable transients that would damage lower-rated pass devices, while configurable inrush limiting charges the camera bulk capacitor without tripping the PSE overcurrent check. The PG output then enables the camera main DC/DC converter only after the input rail is stable, giving the sensor and SoC a clean power sequence.
Empfohlen
Wireless Access Points
Enterprise Wi-Fi access points are among the highest-power PoE endpoints, typically requiring 802.3at or 802.3bt budgets of 25W to 71W for multi-radio designs. The MP8020GQV-Z addresses this because its 802.3bt compliance and 5-event classification negotiate the larger PSE budget, and its GATE1 driver supports an external low-RDS(ON) MOSFET so the power path does not dissipate excess heat at multi-amp load currents. Configurable inrush limiting handles the large bulk capacitance of the AP RF power stage, and the automatic maintain power signature function keeps power applied during low-load idle intervals that would otherwise cause the PSE to disconnect the port. The 18-QFN (3x5 mm) package suits the compact layouts of ceiling-mount AP hardware.
Empfohlen
VoIP Phones
VoIP business phones draw their entire operating power from the Ethernet drop, making the PoE PD interface the first stage of the power architecture. The MP8020GQV-Z is well matched here because IEEE 802.3af/at compliance covers the 13W-25W budgets typical of business phones, and the internal 100V hot-swap MOSFET eliminates an external pass device, reducing BOM count on a cost-sensitive product. Detection and 5-event classification guarantee interoperability with any standards-compliant PoE switch, while input current (IIN) control keeps the phone within its allocated budget as backlight, speaker and radio loads change. The PG output sequences the phone main converter after inrush, protecting the codec and baseband SoC from unregulated input during connection.
Empfohlen
Network Switches and Midspans (PD-side ports)
Edge devices integrated into network hardware - such as switch-stack auxiliary modules, PoE splitters and media converters - need a robust PD interface on their input ports. The MP8020GQV-Z provides a single-channel 802.3af/at/bt compliant front end with an internal 100V hot-swap MOSFET, so splitter and converter designs can present a valid powered-device signature to the upstream PoE switch while protecting downstream circuitry. Configurable inrush current limiting accommodates the wide range of load capacitance these modules see across customer deployments, and the power good signal lets the module hold its isolated DC/DC converter off until the PoE rail is fully established. The compact 3x5 mm QFN fits dense multi-port splitter boards where board area is the constraint.
Empfohlen
Industrial IoT Sensors and Controllers
Industrial deployments increasingly deliver power to sensors, controllers and gateways over Ethernet to avoid local AC/DC conversion at each node. The MP8020GQV-Z suits this environment because its 100V internal MOSFET rating provides generous margin against the long-cable transients found in factory wiring, and its automatic maintain power signature keeps the PSE from disconnecting low-average-power sensor nodes that draw bursts during transmit or actuation events. IEEE 802.3af/at/bt compliance means the node can connect to any PoE switch class, and configurable inrush limiting safely charges large hold-up capacitors used to ride through brief cable faults. The PG output provides a defined enable point for the node isolated converter, simplifying safety design.
Empfohlen
PoE Lighting and LED Drivers
PoE-connected LED luminaires and smart-lighting nodes receive up to 802.3bt power levels over structured cabling, with the PoE front end feeding a downstream LED driver. The MP8020GQV-Z fits because 802.3bt compliance and 5-event classification negotiate the elevated power budgets lighting requires, and the GATE1 external MOSFET driver keeps series resistance low at the multi-amp currents of higher-power fixtures. The internal 100V hot-swap MOSFET stands off PoE transients, and the input current control keeps the luminaire inside its classified budget as dimming levels change. The power good signal sequences the LED driver enable after the PoE rail is charged, preventing flicker or uncontrolled inrush into the LED string capacitors.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MP8020GQV-Z – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MP8020GQV | MP8020GQV-P |
|---|---|---|---|
| Package | 18-QFN (3x5 mm) | 18-QFN (3x5 mm) - same | 18-QFN (3x5 mm) - same |
| Brand | Monolithic Power Systems | Monolithic Power Systems | Monolithic Power Systems |
| PoE Compliance | 802.3af/at/bt | 802.3af/at/bt | 802.3af/at/bt |
| Internal Hot-Swap MOSFET | 100 V integrated | 100 V integrated | 100 V integrated |
| Classification | 5-event | 5-event | 5-event |
| External MOSFET Driver | GATE1 driver | GATE1 driver | GATE1 driver |
| Power Good Output | Yes (PG) | Yes (PG) | Yes (PG) |
| Maintain Power Signature | Automatic | Automatic | Automatic |
Wichtigste Unterscheidungsmerkmale
- Integrated 100V hot-swap MOSFET reduces external BOM (vs. PoE PD controllers requiring discrete external FETs)
- GATE1 driver enables high-efficiency bt designs (vs. MP8020GQV used without external FET)
- Full 802.3bt 5-event classification with automatic MPS (vs. Legacy af/at-only PD controllers)
Designhinweise
For high-power 802.3bt designs, use the GATE1 driver with an external low-RDS(ON) MOSFET instead of relying on the internal 100V hot-swap MOSFET. Estimated: at a 71.3W class budget and ~50V input, load current approaches 1.4A; conduction loss scales with I^2 x R, so a 50 mOhm external FET path dissipates noticeably less than a higher-RDS(ON) integrated path. Verify the external FET VDS rating against PoE transient levels (the internal device is rated 100V) and keep gate drive routing short.
Set the configurable inrush current limit so the downstream bulk capacitor charges within the IEEE 802.3 timing window without exceeding the operating current limit once the internal MOSFET is fully on. If the inrush limit is set too low, startup will time out and the PSE will remove power; if too high, the PSE port overcurrent protection may trip during classification transitions. Validate against the MPS MP8020 datasheet equations and confirm on the EV8020-QV-00A evaluation board with your actual output capacitance.
The 18-QFN (3x5 mm) package requires a solid ground plane and generous copper on the RTN/power path to carry PoE load current and dissipate hot-swap MOSFET losses during startup. Place the IIN sense path close to the IC to keep current-sense loop inductance low, and keep the GATE1 external MOSFET close to the controller. Use 0.1uF decoupling near the VDD pin per the MPS datasheet typical application circuit, and follow the EV8020-QV-00A reference layout for the diode bridge and classification resistor placement.
Compliance-Informationen
RoHS compliant per the -Z suffix and the PartGenie compliance summary; MSL 1. REACH, halogen-free and conflict-minerals status were not stated in the verified data.
