MRFE8VP8600HR5 - 140W 470-870MHz 50V RF LDMOS | NXP
Teilenummer: MRFE8VP8600HR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $138 | $1.380,00 |
| 100 | $128 | $12.800,00 |
| 250 | $122 | $30.500,00 |
| 500 | $115 | $57.500,00 |
MRFE8VP8600HR5 Übersicht
An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor FET engineered to deliver high continuous-wave and pulsed RF output power at high frequencies, combining the ruggedness of a power MOSFET with the frequency response required for narrowband broadcast and ISM links. Within the power semiconductor hierarchy, an RF LDMOS sits under power MOSFET -> discrete semiconductor -> semiconductor, and is the de facto device family for high-power UHF broadcast transmitters because of its high breakdown voltage, high gain, and broadband matching flexibility.
Key electrical specifications include 50 V drain-source rating, 21 dB typical gain at 860 MHz (per DigiKey), 140 W average output power across 470-860 MHz, and integrated input matching. The NI-1230 ceramic flange provides a low thermal resistance path for forced-air or liquid-cooled heatsinking, which is essential when dissipating 200-300 W of waste heat at full CW operation. The device operates class AB for linear broadcast amplification and class C for high-efficiency pulsed operation.
Typical applications include UHF analog and digital TV transmitters (DVB-T/T2, ATSC), industrial scientific and medical (ISM) band amplifiers, and pulsed RF power amplifiers for radar and particle accelerator drivers. The integrated input matching network removes dozens of discrete SMD components from the PCB and enables drop-in device replacement between paired push-pull or Doherty halves.
When designing with this device, ensure the drain supply is decoupled with low-ESR electrolytic and ceramic capacitors close to the flange, and that the heatsink thermal design keeps the junction below 200C under worst-case load VSWR. Always mount with the recommended torque on the mounting screws to avoid ceramic cracking.
Drop-in-Alternativen für MRFE8VP8600HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFE8VP8600H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE8VP8600HS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BLF888A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BLF888B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE8VP8600HR5 Technische Daten
| Manufacturer | NXP Semiconductors |
| Part Number | MRFE8VP8600HR5 |
| Transistortyp | N-Channel Enhancement-Mode LDMOS |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 470 MHz to 870 MHz |
| Drain-Source Voltage (Vdss) | 50 V |
| Continuous Drain Current | 1.4 A (per DigiKey listing) |
| Output Power (Average) | 140 W |
| Output Power (Peak) | 600 W (per ABC Semi listing) |
| Typical Gain | 21 dB at 860 MHz (per DigiKey listing) |
| Power Gain (Typ) | 20 dB at 810 MHz (per FindIC) |
| Gehäuse / Bauform | NI-1230 (SOT1787) |
| Supplier Device Package | NI-1230 |
| Montageart | Chassis / Flange Mount |
| Input Matching | Integrated on-chip input matching network |
| Application | UHF TV broadcast, ISM, pulsed RF |
| RoHS-Status | Compliant (per PCB Electronics listing) |
MRFE8VP8600HR5 Pin-Konfiguration
| Pin 1 | RF Input / Gate — RF signal input with integrated matching network |
| Pin 2 | Drain Bias — 50 V drain supply connection |
| Pin 3 | RF Output — RF power output to external matching network |
| Pin FLANGE | Source / Thermal Ground — DC source and thermal mounting surface |
Sicherer Arbeitsbereich
Typische Anwendungen
MRFE8VP8600HR5 ist geeignet für 6 Anwendungs: UHF Digital TV Broadcast Transmitter, UHF Analog TV Broadcast Transmitter, Pulsed RF Power Amplifier, Industrial ISM Band RF Amplifier, Doherty Amplifier Final Stage, RF Plasma and Particle Accelerator Driver.
UHF Digital TV Broadcast Transmitter
The MRFE8VP8600HR5 is purpose-built for UHF digital TV broadcast transmitters covering DVB-T/T2, ATSC, and ISDB-T standards across 470-860 MHz. Its 140 W average output power and 21 dB gain at 860 MHz make it ideally suited as the final-stage or driver-stage device in a Doherty amplifier configuration, delivering the linearity required for OFDM-modulated digital TV while maintaining power-added efficiency above 40%. The integrated input matching network simplifies the design of paired push-pull devices, ensuring balanced power distribution critical for maintaining signal integrity across the wide UHF broadcast band. Per NXP datasheet, the 50 V drain rating provides headroom for load VSWR transients during antenna fault conditions.
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UHF Analog TV Broadcast Transmitter
For legacy analog NTSC/PAL/SECAM UHF TV transmitters operating 470-860 MHz, the MRFE8VP8600HR5 provides a robust 140 W average output stage with 21 dB gain and class AB linearity. The NXP datasheet confirms its suitability for both analog and digital modulations, and the integrated input matching removes dozens of discrete matching components from the amplifier PCB. The NI-1230 ceramic flange provides low thermal resistance when paired with forced-air or liquid cooling, essential when the transmitter runs continuously at full envelope power. This part is widely deployed as a final-stage replacement in older analog transmitter cabinets.
Empfohlen
Pulsed RF Power Amplifier
The MRFE8VP8600HR5 supports pulsed RF operation with peak power capability up to 600 W per the ABC Semi listing. Its 50 V drain rating and high breakdown voltage allow aggressive pulse waveforms for radar, particle accelerator RF drivers, and pulsed scientific instrumentation operating within the 470-870 MHz ISM bands. The LDMOS technology provides excellent pulse-to-pulse stability when biased in class C, and the integrated input matching simplifies the wideband pulse amplifier reference designs. Per NXP datasheet thermal curves, the device can sustain high duty-cycle pulses when mounted on a heatsink sized for the average dissipation rather than peak pulse power.
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Industrial ISM Band RF Amplifier
The 470-870 MHz range overlaps with several global ISM (industrial, scientific, medical) bands where high-power RF amplification is permitted. The MRFE8VP8600HR5 provides 140 W continuous output with 21 dB gain for industrial heating, plasma generation, and large-scale material processing applications. According to NXP datasheet performance plots, the device maintains stable gain across temperature variations when mounted on a properly cooled heatsink, which is critical for industrial process equipment running 24/7 duty cycles. The integrated input matching network simplifies regulatory compliance testing by reducing board-level RF emissions from mismatched input traces.
Empfohlen
Doherty Amplifier Final Stage
The MRFE8VP8600HR5 is widely deployed in Doherty amplifier final stages for UHF broadcast transmitters because of its integrated input matching and consistent gain across the 470-860 MHz band. The NXP datasheet application note demonstrates symmetrical Doherty pair layouts where the carrier and peaking amplifiers use this exact device, achieving power-added efficiency above 45% at 8 dB back-off. The 50 V drain rating provides the necessary voltage headroom for the peaking amplifier's load modulation, and the NI-1230 package enables symmetrical PCB layouts that are essential for proper Doherty combining network operation.
Empfohlen
RF Plasma and Particle Accelerator Driver
The MRFE8VP8600HR5's 600 W peak pulse capability and 470-870 MHz operating range make it suitable as a driver amplifier in RF plasma generators and small particle accelerator RF systems. Per the NXP datasheet, the LDMOS structure delivers high pulse-to-pulse stability under hard switching conditions, and the integrated input matching simplifies the modulator interface. The NI-1230 ceramic package can be liquid-cooled for accelerator cavity applications where continuous average power must be dissipated into a chilled water loop. This makes the part attractive for scientific research RF amplifier builds in the UHF band.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFE8VP8600HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFE8VP8600H | MRFE8VP8600HS | BLF888A | BLF888B |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Package | NI-1230 (SOT1787) | NI-1230 (SOT1787) - same | NI-1230 (SOT1787) - same | NI-1230 (SOT1787) - same | NI-1230 (SOT1787) - same |
| Frequency Range | 470-870 MHz | 470-870 MHz | 470-870 MHz | 470-860 MHz | 470-860 MHz |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Output Power (Average) | 140 W | 140 W | 140 W | 150 W | 150 W |
| Typical Gain | 21 dB at 860 MHz | 21 dB at 860 MHz | 21 dB at 860 MHz | 19 dB at 860 MHz | 20 dB at 860 MHz |
| Integrated Input Matching | Yes | Yes | Yes | Yes | Yes |
| Packaging Format | Tape & Reel (R5) | Tray | Factory pack | Tray | Tray |
Wichtigste Unterscheidungsmerkmale
- Integrated input matching network on-chip (vs. BLF888A)
- Higher typical gain at the upper UHF band edge (vs. BLF888A)
- NXP factory-direct validated supply chain (vs. MRFE8VP8600H)
Designhinweise
Estimated: at 140 W average RF output and 35 V drain at 45% PAE, the MRFE8VP8600HR5 dissipates approximately 170 W into the heatsink. The NI-1230 ceramic flange requires forced-air cooling with at least 2 m/s airflow, or liquid cooling for continuous full-power operation, to keep the junction below 200C. Per NXP datasheet thermal curves, derate output power by 0.5 W per degree C above 85C case temperature to maintain long-term reliability.
Place the MRFE8VP8600HR5 input and output matching networks on Rogers RO4350B or equivalent low-loss PCB substrate. Keep the gate bias feed line decoupled with 10uF electrolytic plus 1nF ceramic capacitors within 5 mm of the gate lead, per NXP reference design guidelines. The drain bias feed should use a low-ESR electrolytic bank sized for the lowest frequency of modulation envelope to prevent supply droop during OFDM peaks.
Do not exceed 50 V drain-source voltage under any transient condition - use a 56 V TVS diode and gate clamping network to absorb load-pull transients during antenna faults. Per NXP datasheet, the integrated input matching is broadband but does not tolerate gate impedance transformations below 1:1 VSWR without re-matching. Always mount with the manufacturer-specified torque (typically 0.5-0.7 N-m on M3 screws) to prevent ceramic package cracking.
Use coplanar waveguide with ground (CPWG) transmission lines on the input and output, with characteristic impedance of 50 ohms on the substrate. Per NXP reference design, the input trace length should be kept under 10 mm before the first matching component to minimize parasitic inductance. The output trace should accommodate the higher harmonic content of the Doherty signal and use wider trace widths to handle 5-10 A of RF current without excessive copper loss.
Compliance-Informationen
RoHS compliant per PCB Electronics distributor listing. REACH, halogen-free, and conflict minerals declarations should be requested directly from NXP environmental compliance team for production-grade certification.
