MRFG35002N6T1 - 3.5 GHz 1.5W GaAs PHEMT RF Power FET | NXP
Teilenummer: MRFG35002N6T1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $10.77 | $10,77 |
| 10 | $9.85 | $98,50 |
| 100 | $8.62 | $862,00 |
| 500 | $7.54 | $3.770,00 |
| 1.000 | $6.89 | $6.890,00 |
MRFG35002N6T1 Übersicht
An RF power FET (Field-Effect Transistor) is a specialized discrete semiconductor that amplifies radio-frequency signals to transmit power levels required by wireless infrastructure. Within the broader taxonomy, GaAs PHEMT (Gallium Arsenide Pseudomorphic High-Electron-Mobility Transistor) devices sit at the top of the RF power transistor hierarchy, offering higher electron mobility and lower noise figure than silicon LDMOS counterparts, making them preferred for microwave and millimeter-wave front ends. The MRFG35002N6T1 belongs to the medium-power driver segment, typically used between a low-power gain stage and a final high-power amplifier in W-CDMA or OFDM transmitter chains.
Key features include 6 V drain bias operation, 65 mA quiescent current (IDQ), 10 dB typical power gain, and 1.5 W output power capability at 3.55 GHz. According to the datasheet's typical single-carrier W-CDMA performance characterization, the part delivers 158.5 mW average output at 3550 MHz with the specified bias. The device is designed for use in 50 ohm test fixtures with the matching network provided externally by the PCB designer.
The architecture uses a GaAs PHEMT die optimized for high-efficiency linear amplification in the 3.4-3.6 GHz WLL/MMDS band. Its 6 V supply reduces DC power consumption versus traditional 8 V or 12 V RF power devices, simplifying thermal management in sealed outdoor CPE enclosures. The PHEMT structure delivers high gain-bandwidth product and excellent intermodulation distortion performance.
Typical applications include WLL/MMDS/BWA subscriber units at 3.5 GHz, UMTS/W-CDMA driver amplifiers, WiMAX CPE transmitter chains, and general-purpose 3.5 GHz industrial-scientific-medical (ISM) band amplifiers. When designing with this part, the input and output matching networks must be carefully optimized on the PCB - the device is unmatched, so its in-circuit performance is fully determined by the external matching components and bias layout.
Drop-in-Alternativen für MRFG35002N6T1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFG35005N6T1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35010N6T1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35002N6T1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Active |
| Transistortyp | GaAs PHEMT RF Power FET |
| Frequency Range | 500 MHz to 5000 MHz (characterized) |
| Test Frequency | 3.55 GHz |
| Drain Voltage (VDD) | 6 V |
| Quiescent Current (IDQ) | 65 mA |
| Output Power (Pout) | 1.5 W |
| Power Gain | 10 dB (typical) |
| Typical W-CDMA Pout (Avg) | 158.5 mW at 3550 MHz |
| Gehäuse / Bauform | PLD-1.5 |
| Montageart | Surface Mount |
| Configuration | Single, Unmatched |
| Application | WLL / MMDS / BWA / UMTS driver, Class AB |
| RoHS-Status | Compliant (per distributor listing) |
MRFG35002N6T1 pld-1.5 Pinbelegungsleitfaden
Pinbelegung für MRFG35002N6T1 (pld-1.5-Gehäuse). Dieses analoge Bauteil verfügt über Eingangs-, Ausgangs- und Versorgungspins. Offset-Null-, Kompensations- und Enable-Pin-Konfigurationen entnehmen Sie dem Herstellerdatenblatt. Ideal für Signalaufbereitung und Verstärkerschaltungen.
Keine detaillierten Pinbelegungsdaten verfügbar für MRFG35002N6T1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MRFG35002N6T1 ist geeignet für 6 Anwendungs: 3.5 GHz WLL / MMDS Subscriber CPE Transmitter, UMTS / W-CDMA Driver Amplifier, BWA / Fixed WiMAX Driver Stage, Industrial / Scientific 3.5 GHz ISM Amplifier, Class AB Linear Amplifier for Multi-Carrier Signals, Microwave Point-to-Point Radio Driver.
3.5 GHz WLL / MMDS Subscriber CPE Transmitter
The MRFG35002N6T1 fits WLL (Wireless Local Loop) and MMDS (Multichannel Multipoint Distribution Service) subscriber Customer Premise Equipment transmitters because its 3.4-3.6 GHz characterization matches the WLL/MMDS band exactly. With 1.5 W output at 6 V and 65 mA quiescent current, the part delivers sufficient linear power for downstream OFDM or QAM signals after a final gain stage. Its GaAs PHEMT architecture provides the linearity required for multi-carrier modulation while keeping DC power consumption low enough for sealed outdoor enclosures without active cooling.
Empfohlen
UMTS / W-CDMA Driver Amplifier
The MRFG35002N6T1 is specified by NXP for UMTS driver applications, with the datasheet providing typical single-carrier W-CDMA performance at 3550 MHz delivering 158.5 mW average output power. This makes it a strong fit as a driver stage ahead of a higher-power LDMOS final in 3G/3.5G base-station transmitter chains. The 10 dB typical power gain at 3.55 GHz reduces the gain required from preceding stages and improves overall DC-to-RF efficiency. Class AB biasing provides the linearity headroom needed for W-CDMA's 3.84 Mcps chip rate while preserving efficiency.
Empfohlen
BWA / Fixed WiMAX Driver Stage
Broadband Wireless Access (BWA) and fixed WiMAX systems in the 3.5 GHz band benefit from the MRFG35002N6T1's medium-power driver capability. The 1.5 W output level drives a 5-10 W final power amplifier with adequate margin for OFDMA signal peaks while keeping thermal dissipation manageable on a single PLD-1.5 footprint. The unmatched configuration allows the PCB designer to optimize the output network for the specific WiMAX channel bandwidth (3.5 MHz, 5 MHz, or 10 MHz), trading gain for linearity or efficiency as needed.
Empfohlen
Industrial / Scientific 3.5 GHz ISM Amplifier
The 500 MHz to 5000 MHz characterization range allows the MRFG35002N6T1 to operate in the 3.5 GHz industrial-scientific-medical (ISM) band for industrial telemetry, point-to-point radio links, and unlicensed wireless backhaul. With 10 dB of gain and 1.5 W output, it can serve as a linear driver for short-haul microwave links. The PLD-1.5 surface-mount package simplifies assembly versus traditional ceramic flange packages used in legacy ISM designs, reducing manufacturing cost while maintaining the thermal performance required for continuous-duty transmission.
Empfohlen
Class AB Linear Amplifier for Multi-Carrier Signals
The MRFG35002N6T1 is characterized specifically for Class AB Customer Premise Equipment (CPE) applications, where multi-carrier linearity is essential. Class AB biasing at 65 mA IDQ places the operating point between cutoff and full conduction, providing better linearity than Class C and better efficiency than Class A. This is well suited to multi-carrier WLL/MMDS systems where intermodulation products must be suppressed to meet spectral mask regulations. The PHEMT process inherently offers good intermodulation performance in this operating class.
Empfohlen
Microwave Point-to-Point Radio Driver
Licensed 3.5 GHz point-to-point microwave links for cellular backhaul and private networks can use the MRFG35002N6T1 as a driver stage in the transmitter chain. The GaAs PHEMT process provides the gain stability and low phase noise required for high-order QAM constellations used in modern microwave backhaul radios. The unmatched PLD-1.5 device allows the matching network to be tailored to the specific channel frequency and bandwidth allocation, optimizing spectral purity and efficiency for the link budget.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFG35002N6T1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFG35005N6T1 | MRFG35010N6T1 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5 | PLD-1.5 - same | PLD-1.5 - same |
| Output Power | 1.5 W | 5 W | 10 W |
| Drain Voltage (VDD) | 6 V | 6 V | 6 V |
| Technology | GaAs PHEMT | GaAs PHEMT | GaAs PHEMT |
| Test Frequency | 3.55 GHz | 3.55 GHz | 3.55 GHz |
| Configuration | Unmatched, single-ended | Unmatched, single-ended | Unmatched, single-ended |
| Application | WLL/MMDS/BWA/UMTS driver, Class AB | WLL/MMDS/BWA, Class AB | WLL/MMDS/BWA, Class AB |
Wichtigste Unterscheidungsmerkmale
- Lower output power tier enables higher-gain driver use cases (vs. MRFG35010N6T1)
- Matched family footprint across the MRFG3500x series (vs. MRFG35005N6T1)
- Unmatched configuration for design flexibility (vs. MRFG35005N6T1)
Designhinweise
The MRFG35002N6T1 is an unmatched RF power FET, so the PCB matching network is critical. Use a low-loss substrate (Rogers RO4003C or equivalent) with controlled-impedance microstrip lines for the gate and drain matching networks. Place input matching components as close as possible to the gate lead to minimize parasitic inductance; keep the PLD-1.5 thermal pad soldered directly to a continuous copper pour on the top layer to provide a low thermal-impedance path. Per the NXP datasheet, reference matching networks for 3.5 GHz are provided in the application section.
At 6 V VDD and 1.5 W RF output, the DC quiescent dissipation of the MRFG35002N6T1 is approximately 0.39 W, but total dissipation including RF losses can reach 1-2 W at full drive. The PLD-1.5 package provides a low thermal resistance path to the PCB; ensure at least 1 square inch of continuous top-layer copper is connected to the thermal pad, with thermal vias to inner ground planes for additional heat spreading. For sealed outdoor enclosures, derate the ambient temperature by 10-15 C from the datasheet maximum.
Bias the MRFG35002N6T1 from a low-noise, well-regulated 6 V supply to prevent noise coupling into the RF output. Use a 10 uF bulk capacitor plus a 100 nF decoupling capacitor directly at the drain bias pin. Add an RF choke (typically 100 nH to 1 uH depending on frequency) between the drain and the supply to prevent RF leakage into the DC supply while providing DC bias. Per the NXP datasheet, gate bias should be set to achieve 65 mA IDQ at 6 V VDD for Class AB linear operation.
Maintain 50 ohm controlled-impedance transmission lines on all RF input and output traces; impedance discontinuities at the gate or drain will degrade gain and potentially cause instability. Keep RF traces away from digital control lines and noisy DC supply traces; consider a small ferrite bead on the gate bias line to prevent low-frequency oscillation. For multi-stage designs, ensure adequate isolation (typically 50 dB minimum) between the drain of one stage and the gate of the next.
Compliance-Informationen
RoHS compliance confirmed by distributor listings (DigiKey, LCSC). AEC-Q100 not applicable - this is an RF power transistor, not an automotive-qualified IC. REACH and halogen-free status not explicitly stated in the provided data; marked unknown.
