MRFG35003NT1 - 3W, 3.5GHz GaAs PHEMT RF Power FET | NXP
Teilenummer: MRFG35003NT1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.8 | $168,00 |
| 100 | $14.95 | $1.495,00 |
| 500 | $13.4 | $6.700,00 |
| 1.000 | $12.1 | $12.100,00 |
MRFG35003NT1 Übersicht
GaAs pHEMT transistors are a class of heterojunction field-effect devices in which a high-mobility two-dimensional electron gas (2DEG) channel is formed at the AlGaAs/GaAs interface. This hypernym hierarchy - PHEMT -> HEMT -> FET -> transistor -> discrete semiconductor - places the MRFG35003NT1 in the highest-performance tier of RF power devices, offering higher cut-off frequencies, lower noise figure, and higher power density than conventional silicon MOSFETs or LDMOS. Within NXP's portfolio it sits in the MRFG family of small-signal/medium-power pHEMT drivers intended for base-station front-end stages.
Key differentiating features include a 15 V drain-source voltage rating, 1.3 A maximum continuous current, 11.5 dB minimum power gain measured at 3.55 GHz, 12 V bias with 55 mA quiescent bias point, and a thermally enhanced PLD-1.5 overmolded plastic body qualified for a maximum channel temperature of 150°C. The device is RoHS-compliant and ships on tape and reel in production-friendly packaging.
Architecturally the die uses a single N-channel pHEMT cell optimised for linear Class AB operation, where the gate is biased just below pinch-off to trade gain for improved intermodulation distortion. Because the part ships unmatched, the application circuit becomes a printed matching network of microstrip lines, bond-wire inductances, and shunt capacitors that resonate the device's input/output capacitances at the target band.
Typical applications include 2.5/3.5 GHz WLL and MMDS driver amplifiers, 2.3 GHz WiMAX/Wi-Bro driver stages, UMTS/WCDMA base-station transmit chains, BWA point-to-multipoint radios, and 1.8 GHz DCS/PCS driver blocks. Designers routinely pair the MRFG35003NT1 with NXP's higher-power MRF6S21140 (final-stage LDMOS) or with a paired MRFG35003MR6 in push-pull driver configurations.
A primary design consideration is thermal management: at 3 W CW output with 12 V bias, the device dissipates roughly half its DC input as heat, and the PLD-1.5 package must be soldered to a copper pad of at least one square inch to keep the channel temperature below 150°C. Because the part is unmatched, the PCB art around the device is the matching network - trace lengths, widths, and via fences should be modeled in a 2.5D EM simulator before fab.
This page synthesises datasheet parameters, current distributor pricing, drop-in and same-footprint alternatives, and practical RF design notes that are not consolidated in the manufacturer datasheet.
Drop-in-Alternativen für MRFG35003NT1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRFG35003NT1 (gleiche Bauform und Footprint) – abweichend in Manufacturer, Mounting Type, Package / Case, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFG35003NT1
✅ Drop-In✓ Auf Lager
$12.1 / Stück
Datenblatt ansehen →MRFG35003MR6
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRFG35010NT1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$25.95 / Stück
Datenblatt ansehen →MRF6S21140HSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
CGH40010F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFG35003NT1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Transistortyp | GaAs pHEMT N-channel RF Power FET |
| Technology | Gallium Arsenide Pseudomorphic HEMT |
| Frequency Range | 1.8 GHz to 3.6 GHz |
| Test Frequency | 3.55 GHz |
| Rated Drain Voltage (VDS max) | 15 V |
| Continuous Drain Current | 1.3 A |
| Output Power (CW, typical) | 3 W |
| Power Gain (Gpss, min) | 11.5 dB at 3.55 GHz |
| Test Bias Voltage | 12 V |
| Test Quiescent Current (IDQ) | 55 mA (small-signal); 650 mA (W-CDMA pulsed) |
| Operating Class | Class AB linear |
| Matching | Unmatched (external matching network required) |
| Gehäuse / Bauform | PLD-1.5 (CASE 466-03, Style 1) |
| Montageart | Surface Mount |
| Maximum Channel Temperature | 150 °C |
| RoHS-Status | Compliant |
MRFG35003NT1 Pin-Konfiguration
| Pin 1 | Gate — RF input gate; DC bias and RF drive applied here |
| Pin 2 | Drain — RF output drain; DC supply (typically 12 V) applied via matching network |
| Pin 3 | Source — Source terminal; tied to PCB ground and thermal slug |
| Pin Slug | Thermal/RF Ground — Bottom copper slug - primary thermal path and RF ground; must be soldered to PCB ground pad |
DC Sicherer Arbeitsbereich (estimated)
Typische Anwendungen
MRFG35003NT1 ist geeignet für 6 Anwendungs: WLL / MMDS Driver Amplifier, UMTS / W-CDMA Base-Station Driver, BWA / WiMAX Driver (2.3-3.5 GHz), 2.5/3.5 GHz Point-to-Point / Point-to-Multipoint Radio Driver, Test & Measurement Driver Stage, Industrial / Scientific RF Heating Driver.
WLL / MMDS Driver Amplifier
The MRFG35003NT1's 1.8-3.6 GHz coverage and 11.5 dB minimum gain at 3.55 GHz make it a natural driver for 3.5 GHz WLL and MMDS customer-premises equipment. With 3 W CW output at 12 V bias and an external matching network, it can deliver +34 dBm of linear power to a downstream higher-power LDMOS final such as the MRF6S21140, providing the gain stage that raises a milliwatt-level transceiver signal to the watts needed to drive the final. Designers should bias at IDQ ≈ 100-200 mA for a good linearity/efficiency trade-off.
Empfohlen
UMTS / W-CDMA Base-Station Driver
In UMTS Node-B transmit chains the MRFG35003NT1's 3 W pulsed output and linear Class AB bias match the typical gain and linearity needs of a driver stage feeding a 30-60 W final PA. According to the datasheet, IDQ = 650 mA at VDD = 12 V is the characterisation point for single-carrier W-CDMA, with ACLR compliance dependent on the application matching network. The 1.3 A continuous current rating and 15 V VDS max provide useful headroom for the pulsed W-CDMA envelope without compromising reliability.
Empfohlen
BWA / WiMAX Driver (2.3-3.5 GHz)
For Broadband Wireless Access and 2.3/2.5/3.5 GHz WiMAX base-station drivers, the MRFG35003NT1's coverage of the full 1.8-3.6 GHz band lets one driver SKU serve multiple regional band plans. The unmatched PLD-1.5 package allows designers to tune the matching network for the specific OFDM channel bandwidth, optimising gain flatness and EVM for the 64-QAM constellations typical in WiMAX. At 3 W output it is well-matched to pico-cell and micro-cell final-stage requirements.
Empfohlen
2.5/3.5 GHz Point-to-Point / Point-to-Multipoint Radio Driver
Licensed-band P-to-P and P-to-MP radios in the 3.5 GHz band need a low-noise, medium-power driver before the final PA. The MRFG35003NT1's 11.5 dB gain and GaAs pHEMT noise floor make it a good fit, and the PLD-1.5 plastic package simplifies outdoor radio assembly versus ceramic flanged parts. With proper input matching for noise figure, this stage can establish the receiver-friendly dynamic range needed for adaptive-modulation links in the 3.5 GHz CBRS/fixed-wireless band.
Empfohlen
Test & Measurement Driver Stage
Lab-grade signal generators and ATE test heads often need a clean 1-3 W driver in the 2-4 GHz band before a final booster. The MRFG35003NT1's small-signal gain linearity and the ability to externally tune the matching network let test-instrument designers optimise for lowest harmonic distortion at a specific CW frequency. The PLD-1.5 package is small enough to fit inside benchtop equipment, and the 12 V bias simplifies integration with conventional lab power supplies.
Empfohlen
Industrial / Scientific RF Heating Driver
Industrial RF heating and plasma-generation systems operating in the 2.45/3.5 GHz ISM bands can use the MRFG35003NT1 as a low-power CW driver before a high-power tube or solid-state final. The device's 12 V/3 W operating point and tolerance of moderate mismatch make it resilient against load-pull conditions typical of variable plasma loads. The PLD-1.5 plastic overmold is industrial-friendly and the 150 °C channel rating supports continuous-duty industrial operation with adequate heatsinking.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFG35003NT1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFG35003MR6 | MRFG35010NT1 | MRF6S21140HSR3 | CGH40010F |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Qorvo |
| Package | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 (CASE 466-03, Style 1) | PLD-1.5 (CASE 466-03, Style 1) | NI-780HS (CASE 465A-06) | Flanged ceramic (Package 440196) |
| Technology | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | Si LDMOS | GaN HEMT |
| Frequency Range | 1.8 - 3.6 GHz | 1.8 - 3.6 GHz | 1.8 - 3.6 GHz | 1.8 - 2.2 GHz | DC - 6 GHz |
| Output Power (CW) | 3 W | 3 W | 10 W | 140 W | 10 W |
| Drain Voltage (rated) | 15 V | 15 V | 15 V | 28 V | 28 V |
| Matching | Unmatched | Unmatched | Unmatched | Unmatched | Unmatched (RF in) |
| Operating Class | Class AB linear | Class AB linear | Class AB linear | Class AB | Class AB |
Wichtigste Unterscheidungsmerkmale
- Plastic overmold PLD-1.5 package simplifies high-volume SMT assembly (vs. CGH40010F (Qorvo flanged ceramic))
- Multi-band coverage from a single unmatched die (vs. MRF6S21140HSR3 (matched at 2.1 GHz))
- GaAs pHEMT noise floor versus LDMOS and GaN alternatives (vs. MRF6S21140HSR3 (Si LDMOS))
- Lower DC bus voltage reduces power-converter cost (vs. CGH40010F (28 V GaN))
Designhinweise
The MRFG35003NT1 has a maximum channel temperature of 150 °C. At 3 W CW output with 12 V bias, the part dissipates several watts and the PLD-1.5 copper slug must be soldered to a copper pad of at least one square inch on the PCB. Use an array of 0.3 mm thermal vias under the slug to drop the thermal resistance to the inner ground plane. Measure the case temperature in the application and derate the output power if Tj approaches 150 °C at the highest expected ambient.
Because the part is unmatched, the surrounding PCB art IS the matching network. Use controlled-impedance (50 Ω) microstrip lines from the gate and drain leads, place RF bypass capacitors within 1 mm of the DC feed points, and add a via fence around the RF traces for isolation. The exposed thermal pad must have a continuous ground plane on the inner layer with thermal vias. Verify the matching network with a 2.5D EM simulator before fab, and include a tuning stub for production trim.
Do not exceed VDD = 15 V or ID = 1.3 A even briefly - the GaAs pHEMT die is ESD-sensitive and will latch up under transient over-voltage. Apply gate bias BEFORE drain bias (or simultaneously) to avoid forward-biasing the gate-source Schottky junction. Always include a drain-current limit in the bias supply to protect against load-pull-induced over-current during antenna VSWR events. Confirm pin 1 orientation by the package marker - reversed mounting will destroy the device under bias.
GaAs pHEMT devices exhibit gain compression 1-2 dB below the CW saturated power, so for linear modulation formats (W-CDMA, WiMAX, LTE) back off the output power by 3-4 dB from P1dB to meet ACLR/EVM masks. The MRFG35003NT1's pulsed W-CDMA characterisation at IDQ = 650 mA is a good linearity reference, but verify with the actual application matching network. Use a vector signal generator and spectrum analyser for production ACLR test, not just CW power.
Compliance-Informationen
RoHS-compliant per NXP product page. REACH and conflict-minerals status confirmed via NXP product-completion declaration. Not AEC-Q100 qualified (this is an RF power transistor, not an automotive-grade IC). Halogen-free status not explicitly listed in the datasheet excerpt - confirm with NXP if required.
