MW4IC915MBR1 - 900MHz 15W RF LDMOS Power Amplifier | NXP
Teilenummer: MW4IC915MBR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 50 | $30.85 | $1.542,50 |
| 100 | $27.95 | $2.795,00 |
| 500 | $24.1 | $12.050,00 |
| 1.000 | $21.5 | $21.500,00 |
MW4IC915MBR1 Übersicht
An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a type of RF power transistor built on a silicon LDMOS process, internally matched to 50 ohms at input and output and integrated with bias networks to simplify RF front-end design. In the broader RF component taxonomy, the MW4IC915MBR1 sits within: RF power amplifier -> RF amplifier IC -> amplifier -> RF & wireless IC -> semiconductor device.
Key features include 15 W CW Pout at 26 V, broadband coverage from 750 MHz to 1 GHz covering all 900 MHz cellular bands, on-chip input and interstage matching networks, high gain suitable for driver or final-stage use, and built-in ESD protection. The TO-272 WB-16 overmolded plastic package provides a low thermal-resistance path, enabling compact base-station amplifier board designs.
Internally the device uses a two-stage LDMOS architecture with on-chip matching; the gates are biased through internal networks, which simplifies the external application circuit to DC blocking caps at RF ports, drain-supply RF chokes, and a regulated gate bias supply. Compared with discrete transistor implementations, the integrated matching reduces tuning effort and improves unit-to-unit gain flatness across production lots.
Typical applications include GSM/GSM EDGE base-station power amplifiers, N-CDMA and W-CDMA 900 MHz cellular infrastructure, and general 860-960 MHz industrial RF transmitters. The broadband response also makes it usable as a driver for higher-power LDMOS final stages in macro-cell base stations.
When designing with this part, ensure the heatsink thermal design keeps the case temperature below the manufacturer's maximum rating under worst-case CW load. Adequate RF decoupling and harmonic filtering at the output are essential to meet spectral mask requirements in cellular systems.
This page synthesizes distributor pricing, parametric drop-in alternatives, and application notes not found in the manufacturer datasheet alone, with current market data as of 2026-10-16 to support engineering sourcing decisions.
Drop-in-Alternativen für MW4IC915MBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MW4IC915MBR1 (gleiche Bauform und Footprint) – abweichend in Manufacturer, Mounting Type, Package, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW4IC915GMBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW4IC915NBR1
✅ Drop-In✓ Auf Lager
$23.75 / Stück
Datenblatt ansehen →MW4IC915MBR1G
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC915MBR2
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC915GNBR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW4IC915MBR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors |
| Product Family | MW4IC915 |
| Funktion | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) |
| Output Power (CW) | 15 W typical at 26 V |
| Versorgungsspannung | 26 V typical |
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| Gehäuse | TO-272 WB-16 (Case 1329-09), overmolded plastic |
| Configuration | Two-stage integrated amplifier with on-chip matching |
| Target Applications | GSM, GSM EDGE, N-CDMA, W-CDMA base stations |
| Input Matching | On-chip, integrated |
| Output Matching | On-chip, integrated |
| Montageart | Surface Mount / Flange (TO-272 style) |
| RoHS-Status | Compliant |
| Lead Free | Yes |
MW4IC915MBR1 Pin-Konfiguration
| Pin 1 | RF_IN — RF input (matched on-chip, DC block externally) |
| Pin 2 | GATE_BIAS — Gate bias supply for first stage (regulated) |
| Pin 3 | GND — Ground (also via case flange) |
| Pin 4 | VGG — Gate bias reference |
| Pin 5 | NC — No connect (reserved) |
| Pin 6 | GND — Ground |
| Pin 7 | VDD1 — Drain supply, first stage |
| Pin 8 | NC — No connect |
| Pin 9 | GND — Ground |
| Pin 10 | NC — No connect |
| Pin 11 | GND — Ground |
| Pin 12 | VDD2 — Drain supply, second stage |
| Pin 13 | NC — No connect |
| Pin 14 | GND — Ground |
| Pin 15 | NC — No connect |
| Pin 16 | RF_OUT — RF output (matched on-chip) |
Sicherer Arbeitsbereich (estimated from datasheet typical curves)
Typische Anwendungen
MW4IC915MBR1 ist geeignet für 6 Anwendungs: GSM 900 MHz Base Station Power Amplifier, GSM EDGE Linear Power Amplifier Stage, N-CDMA / W-CDMA 900 MHz Driver Stage, Industrial / Scientific 900 MHz RF Transmitter, Driver Stage for Higher-Power LDMOS Final PA, Multi-Carrier Cellular PA Module.
GSM 900 MHz Base Station Power Amplifier
The MW4IC915MBR1's 15 W CW output at 26 V and 860-960 MHz bandwidth make it a direct fit for GSM 900 base-station PA stages. The integrated two-stage LDMOS architecture with on-chip input matching eliminates external matching networks, reducing PCB area and tuning time per the NXP datasheet. Compared with discrete transistor designs, the MW4IC915MBR1 cuts BOM count and improves unit-to-unit gain flatness. At full CW load the device dissipates roughly 15 - 20 W internally, so a substantial heatsink is required for continuous GSM operation.
Empfohlen
GSM EDGE Linear Power Amplifier Stage
For GSM EDGE base-station PA stages requiring linear amplification with controlled spectral regrowth, the MW4IC915MBR1 paired with the MW4IC915GMBR1 variant delivers 15 W average output in the 900 MHz band. The LDMOS process provides the linearity margin needed for 8-PSK EDGE modulation per the NXP datasheet. Engineers typically bias the device backed-off from saturation to meet the EDGE spectral mask. Digital predistortion (DPD) can further improve linearity at higher average output levels.
Empfohlen
N-CDMA / W-CDMA 900 MHz Driver Stage
The MW4IC915MBR1 operates across 750 MHz to 1 GHz, covering the W-CDMA Band VIII (925-960 MHz) and N-CDMA 900 allocations. The integrated amplifier simplifies RF front-end design and the 15 W output class is well-suited as a driver for higher-power Airfast final-stage LDMOS transistors in macro base stations. Per the NXP datasheet, the wideband response allows a single SKU to serve multiple cellular bands, reducing qualification effort. Adjacent-channel leakage ratio (ACLR) is the key linearity metric in this application.
Empfohlen
Industrial / Scientific 900 MHz RF Transmitter
Industrial RF links in the 900 MHz ISM band (902-928 MHz) and adjacent scientific allocations can use the MW4IC915MBR1 as a final-stage PA for point-to-point radios, RFID readers, and SCADA telemetry transmitters. The 750 MHz to 1 GHz coverage falls comfortably inside the 900 MHz ISM window with margin for filter roll-off per the NXP datasheet. The integrated matching networks reduce per-unit tuning cost on industrial volumes. Ensure harmonic filtering at the output meets FCC Part 15 / ETSI EN 300 220 spectral masks.
Empfohlen
Driver Stage for Higher-Power LDMOS Final PA
The MW4IC915MBR1 is frequently used as a driver stage ahead of higher-power 60-100 W LDMOS transistors in macro-cell base stations. Its 15 W output and integrated matching make it well-suited to drive the gate of a final-stage Airfast transistor in the 900 MHz cellular band per the NXP datasheet. The two-stage cascadable gain simplifies feedback-loop design for digital predistortion. Stable interstage matching reduces sensitivity to final-stage device selection, easing multi-vendor sourcing.
Empfohlen
Multi-Carrier Cellular PA Module
In multi-carrier GSM/EDGE PA modules, the MW4IC915MBR1's wideband 750 MHz to 1 GHz response allows a single device to cover multiple operator allocations within the 900 MHz cellular band per the NXP datasheet. Designers typically run the device at reduced average output to preserve linearity across multiple carriers and meet the spectral mask. The integrated matching and 26 V operation match standard base-station 28 V bus rails with adequate headroom. Combined with a SAW filter and isolator, it forms a complete multi-carrier PA brick.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW4IC915MBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW4IC915GMBR1 | MW4IC915NBR1 | MW4IC915MBR1G |
|---|---|---|---|---|
| Package | TO-272 WB-16 (Case 1329-09) | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW) | 15 W at 26 V | 15 W at 26 V | 15 W at 26 V | 15 W at 26 V |
| Frequency Range | 750 MHz to 1 GHz | 750 MHz to 1 GHz | 750 MHz to 1 GHz | 750 MHz to 1 GHz |
| Supply Voltage | 26 V typical | 26 V typical | 26 V typical | 26 V typical |
| On-Chip Matching | Yes (input + interstage) | Yes | Yes | Yes |
| Target Application | GSM / GSM EDGE / N-CDMA / W-CDMA 900 MHz | GSM EDGE-optimized | GSM / N-CDMA optimized | GSM / EDGE / CDMA |
| Lifecycle Status | Active | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- Two-stage integration with on-chip matching (vs. Discrete 2-stage LDMOS design)
- Direct-fit for 900 MHz cellular bands (vs. MW7IC930NR1 (30 W class))
- TO-272 WB-16 overmolded plastic package (vs. Ceramic flanged LDMOS packages)
Designhinweise
The MW4IC915MBR1 dissipates approximately 15 W internally at 15 W CW RF output and 26 V supply, so the heatsink design must keep the case temperature below the datasheet maximum (verify the exact figure against the official NXP datasheet). For continuous GSM CW operation, mount the TO-272 WB-16 flange directly to a machined-aluminum or copper heatsink with a thin thermal interface material. Insufficient thermal design is the most common failure mode for LDMOS power amplifiers in base-station service.
Per the NXP datasheet, the MW4IC915MBR1 integrates input and interstage matching, so only DC blocking capacitors at the RF ports and a regulated gate bias supply are needed externally. Use a low-ESR 100 nF ceramic bypass on the drain supply right at the lead, with a 10 uF bulk decoupling cap on the PCB. Keep RF traces 50 ohm microstrip and place DC blocks immediately adjacent to the RF input and output leads to minimize parasitic inductance.
Do not exceed the absolute maximum drain voltage or gate-source voltage from the NXP datasheet; overvoltage stress is the leading cause of LDMOS field failures. Ensure the gate bias is applied before the drain supply (sequencing) and removed after the drain supply to avoid forward-biasing the gate oxide. Add a small RC snubber at the drain if parasitic oscillations appear on the spectrum analyzer, which is common with high-gain LDMOS at 900 MHz.
Compliance-Informationen
RoHS and lead-free per NXP product page; AEC-Q100 not applicable for RF power amplifier; REACH compliance assumed from NXP standard documentation but specific certificate must be requested.
