MW5IC2030MBR1 - 30W RF LDMOS Power Amplifier 1.93-1.99GHz | NXP
Teilenummer: MW5IC2030MBR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $50.25 | $50,25 |
| 10 | $47.5 | $475,00 |
| 100 | $42.8 | $4.280,00 |
| 500 | $38.2 | $19.100,00 |
| 1.000 | $34.5 | $34.500,00 |
MW5IC2030MBR1 Übersicht
A RF LDMOS integrated power amplifier (IPA) is a multi-stage transistor amplifier built on a laterally-diffused metal-oxide-semiconductor process and integrated with on-chip input/output matching networks. IPAs sit at the output stage of a base-station transmitter, immediately before the antenna filter and duplexer, converting milliwatt-level driver signals into tens of watts of RF power while maintaining linearity and efficiency. They belong to the broader family of RF power transistors (LDMOS -> RF power transistor -> discrete semiconductor -> RF amplifier IC) and are preferred for cellular infrastructure because LDMOS offers a superior gain-linearity-cost trade-off compared to GaAs and GaN alternatives at sub-3 GHz frequencies.
Key features include 23 dB typical gain, 26 V nominal supply operation (range 26-28 V), 160 mA typical quiescent supply current, and integrated ESD protection on the gate. The multi-stage structure includes on-chip matching that makes it drop-in usable from 1930 to 1990 MHz, reducing board footprint and RF tuning time. The TO-272 WB-16 overmolded plastic package provides low thermal resistance for reliable CW and pulsed operation.
The MW5IC2030MBR1 uses a multi-stage LDMOS architecture with on-chip matching. The first stage is a Class AB driver providing roughly 15 dB of gain, followed by a final-stage Class AB output that supplies the additional 8 dB to reach the typ 23 dB total. The LDMOS process gives high drain efficiency and good ruggedness into mismatched loads (VSWR), and the 26 V rail improves power density versus legacy 12-15 V parts.
Typical applications include GSM/EDGE 1900 MHz base-station PA stages, W-CDMA Node B transmit amplifiers, PHS (Personal Handy-phone System) micro-cell transmitters, and general 1930-1990 MHz industrial ISM-band RF power generation. When designing with this part, ensure the PCB thermal layout connects the package flange to a sufficient copper area for heat removal; CW 30 W operation can push the junction temperature well above safe limits without proper thermal via stitching.
Drop-in-Alternativen für MW5IC2030MBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW5IC2030GMBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW5IC2030MBR1
✅ Drop-In✓ Auf Lager
$34.5 / Stück
Datenblatt ansehen →MW6IC2030MBR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW5IC2245MBR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW7IC2040MBR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW5IC2030MBR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale, Motorola) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Pout) | 30 W (typ, CW) |
| Power Gain | 23 dB (typ) |
| Supply Voltage (Vdd) | 26 V nominal (26 V to 28 V range) |
| Quiescent Supply Current (Idq) | 160 mA (typ) |
| Modulation Formats Supported | GSM, GSM EDGE, W-CDMA, PHS, CDMA, TDMA |
| Gehäuse / Bauform | TO-272 WB-16 (overmolded plastic, flat leads) |
| Input Matching | Internal (on-chip, 50 ohm) |
| Output Matching | Internal (on-chip, 50 ohm) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per DigiKey product page) |
| Technology | LDMOS (laterally-diffused MOSFET) |
MW5IC2030MBR1 to-272 wb-16 (overmolded plastic, flat leads) Pinbelegungsleitfaden
Pinbelegung für MW5IC2030MBR1 (to-272 wb-16 (overmolded plastic, flat leads)-Gehäuse). Dieses analoge Bauteil verfügt über Eingangs-, Ausgangs- und Versorgungspins. Offset-Null-, Kompensations- und Enable-Pin-Konfigurationen entnehmen Sie dem Herstellerdatenblatt. Ideal für Signalaufbereitung und Verstärkerschaltungen.
Keine detaillierten Pinbelegungsdaten verfügbar für MW5IC2030MBR1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
RF Sicherer Arbeitsbereich
Typische Anwendungen
MW5IC2030MBR1 ist geeignet für 6 Anwendungs: GSM/EDGE 1900 MHz Base Station PA, W-CDMA Node B Power Amplifier, PHS Micro-Cell Transmitter, 1900 MHz Industrial / Scientific RF Power Source, Multi-Standard Base-Station Driver, 1900 MHz Repeater / Booster PA.
GSM/EDGE 1900 MHz Base Station PA
The MW5IC2030MBR1 suits GSM and GSM EDGE 1900 MHz (PCS) base-station transmit final stages where 30 W CW power at the antenna feed is required after the duplexer. Its 23 dB gain lets a single part replace driver-plus-final PAs in macro-cell sites, and on-chip 50-ohm matching eliminates the LC matching network that legacy discrete LDMOS transistors need - cutting board area and tuning cost. Class AB bias from the 26 V rail gives the linearity headroom needed for EDGE 8-PSK bursts while still hitting >40% drain efficiency in GSM saturated mode, which directly lowers base-station operating expense (OPEX). Reference design patterns are documented in the NXP MW5IC2030M datasheet application section, including gate-bias sequencing and harmonic filtering.
Empfohlen
W-CDMA Node B Power Amplifier
In W-CDMA / UMTS Node B transmitters operating at 1930-1990 MHz (Band II / PCS downlink), the MW5IC2030MBR1 delivers the 30 W CW linear output required to drive the antenna after combiner losses. The part's 23 dB gain and wideband linear design handle multi-carrier 3GPP signal envelopes without external predistortion in many sub-30 W sectors, simplifying the Node B radio chain. The 26 V rail matches existing macro-site -48 V DC plants fed through 26-28 V bus converters, avoiding the need for system-level re-architecting. Per the NXP datasheet, ACPR remains within 3GPP spectral mask requirements at 30 W Pout with appropriate bias and feed networks, making this part a high-volume workhorse for legacy W-CDMA rollouts still in operation worldwide.
Empfohlen
PHS Micro-Cell Transmitter
The MW5IC2030MBR1 is rated for PHS (Personal Handy-phone System) operation in the 1930-1990 MHz band, making it usable in PHS micro-cell and pico-cell base-station transmitters deployed across Japan and parts of Asia. PHS uses pi/4-DQPSK modulation at lower power density than W-CDMA, so 30 W CW delivers comfortable link budget for indoor/footprint-limited cells. The overmolded TO-272 WB-16 plastic package keeps the part low-cost versus ceramic-air-cavity alternatives historically used in PHS infrastructure, supporting volume micro-cell deployments. The NXP datasheet shows PHS as one of the supported modulation formats, confirming the device is characterized for pi/4-DQPSK spectral masks at the family-typical output level.
Empfohlen
1900 MHz Industrial / Scientific RF Power Source
Outside cellular, the MW5IC2030MBR1 powers industrial and scientific RF energy systems in the 1930-1990 MHz ISM-adjacent band, including RF plasma generators, industrial heating applicators, and materials-processing RF power stages. The 30 W CW class-AB output drives sub-MHz modulation envelopes at the industrial system level, and the 26 V DC rail can come from readily available 28 V bus converters. LDMOS ruggedness into VSWR mismatches lets the part survive plasma-load arcing and antenna-detuning events better than GaAs PAs. Engineers should add isolators at the output to protect the 50-ohm-matched IPA from reflected power - a pattern documented in NXP's LDMOS application notes.
Empfohlen
Multi-Standard Base-Station Driver
As a driver stage in higher-power macro-cell or outdoor PA assemblies, the MW5IC2030MBR1 sits between a low-power transceiver chain and a final-output LDMOS pallet delivering >100 W. The 23 dB gain boosts a 10 mW input to ~2 W at its output, enough to drive one final stage in a typical Doherty PA chain. Multi-standard capability (GSM/EDGE/W-CDMA/PHS) lets the same carrier assembly support operators that swap modulation formats across their spectrum allocations, lowering SKU counts in OEM base-station manufacturing. Per the NXP MW5IC2030M datasheet, the device is characterized into 8-10 dB back-off for linear W-CDMA operation, making it well suited to driver duty in Doherty architectures.
Empfohlen
1900 MHz Repeater / Booster PA
Cellular repeaters and bidirectional amplifiers (BDAs) operating at 1900 MHz PCS use the MW5IC2030MBR1 as the final 30 W output stage, extending coverage into buildings, tunnels, and rural shadow zones. The on-chip 50-ohm matching lets BDA designers embed the part directly into a printed chain without discrete LC networks, reducing BOM and tuning time. The 26 V rail aligns with repeater rack DC distribution standards, and LDMOS ruggedness tolerates antenna-port mismatches that frequently occur during BDA field installation. NXP application notes for LDMOS IPAs include recommended PCB thermal layout, isolator placement, and gate-bias sequencing to ensure reliable BDA deployment.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW5IC2030MBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW5IC2030GMBR1 | MW6IC2030MBR1 | MW5IC2245MBR1 | MW7IC2040MBR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 (same) | TO-272 WB-16 (same) | TO-272 WB-16 (same) | TO-272 WB-16 (same) |
| Operating Frequency | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 2110-2170 MHz | 1930-1990 MHz |
| Output Power (CW) | 30 W | 30 W | 30 W | ~30 W family typical | 40 W |
| Power Gain | 23 dB | 23 dB | 23 dB (typical) | 23 dB (typical) | 23 dB (typical) |
| Supply Voltage (Vdd) | 26 V | 26 V | 26-28 V | 26-28 V | 26-28 V |
| Modulation Formats | GSM, EDGE, W-CDMA, PHS, CDMA, TDMA | GSM, EDGE (burst-optimized) | GSM, EDGE, W-CDMA, PHS | W-CDMA (family) | GSM, EDGE, W-CDMA, PHS |
| Pin-to-Pin Compatible | Reference (this MPN) | Yes (same TO-272 WB-16) | Yes (same TO-272 WB-16) | Yes (same TO-272 WB-16) | Yes (same TO-272 WB-16) |
| Lifecycle Status | Active | Active | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- Internally matched to 50 ohms at input and output, eliminating external matching networks (vs. Discrete LDMOS transistors (e.g., MRF19030 or similar))
- Multi-stage integrated structure provides 23 dB gain in a single package (vs. Discrete driver-plus-final PA cascades)
- Multi-standard modulation support (GSM, EDGE, W-CDMA, PHS, CDMA, TDMA) in one part (vs. Single-mode dedicated PAs (e.g., GSM-only or W-CDMA-only))
Designhinweise
Estimated: at 30 W CW RF output and ~50% DC-to-RF efficiency, the MW5IC2030MBR1 dissipates roughly 30 W as heat at the die. The TO-272 WB-16 overmolded plastic package requires substantial PCB copper area and thermal via stitching directly under the package thermal pad to keep junction temperature below the reliability ceiling. Engineers should follow the NXP MW5IC2030M datasheet PCB layout recommendations (typically 4-6 sq inches of 2 oz copper with via arrays on 0.5 mm pitch) and verify with a thermal sim before finalizing the base-station PA board stack-up.
The MW5IC2030MBR1 has on-chip 50-ohm matching at input and output, but PCB trace transitions around the RF leads must remain at 50 ohms with continuous ground reference. Per NXP LDMOS application notes (referenced in the MW5IC2030M datasheet), the gate-bias traces should be kept narrow and decoupled with 100 nF + 10 uF capacitor pairs placed within 2 mm of each gate bias pin to suppress parametric oscillation. Drain feed should use a quarter-wave microstrip or discrete bias tee to prevent RF leakage back into the 26 V supply.
Three common pitfalls when using the MW5IC2030MBR1: (1) applying gate bias before drain voltage causes non-uniform current sharing and can damage the LDMOS die - always sequence Vgs first, then Vdd; (2) forgetting an output isolator exposes the part to load VSWR that may exceed ruggedness ratings; (3) operating the part outside the 1930-1990 MHz band reduces efficiency and may violate spectral masks. According to the NXP MW5IC2030M datasheet, the device is only characterized for the band shown and derating applies outside it.
Even though LDMOS is significantly more linear than older silicon bipolar PAs, the MW5IC2030MBR1 still requires output harmonic filtering to meet FCC Part 24 spurious emission limits in the 1900 MHz PCS band. A low-pass filter after the device - typically a 5th-order Chebyshev with cutoff around 2100 MHz - keeps 2x and 3x harmonics below -70 dBc. Per NXP base-station reference designs, expect ~3-5 dB insertion loss from this filter, so place the MW5IC2030MBR1 to drive it directly without intermediate stages to preserve OIP3.
Compliance-Informationen
RoHS compliant per DigiKey product page. REACH and CMRT compliance per NXP material declarations. AEC-Q100 not applicable (RF power amplifier not automotive grade). Halogen-free status not explicitly listed in scraped data - mark unknown.
