NRVTS10100MFST1G - 10A 100V Trench Schottky Rectifier | onsemi
Teilenummer: NRVTS10100MFST1G ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.92 | $0,92 |
| 10 | $0.82 | $8,20 |
| 100 | $0.71 | $71,00 |
| 500 | $0.61 | $305,00 |
| 1.000 | $0.54 | $540,00 |
| 3.000 | $0.46 | $1.380,00 |
NRVTS10100MFST1G Übersicht
A Schottky rectifier is a unipolar semiconductor diode formed by a metal-semiconductor junction, prized for its low forward voltage drop (typically 0.3 V to 0.6 V versus 0.7 V+ for silicon PN-junction diodes) and fast switching speed due to absence of minority-carrier charge storage. Within the broader discrete-semiconductor taxonomy, trench Schottky rectifiers sit at the top of the efficiency hierarchy for low-to-medium voltage (<200 V) applications, offering an optimal balance of conduction loss, switching loss, and thermal stability. The NRVTS10100MFST1G's trench structure further reduces VF by minimizing the junction barrier, while a stable leakage current versus temperature profile allows operation at elevated junction temperatures without thermal runaway.
Key specifications include 10 A continuous forward current (IF(AV)), a maximum repetitive peak reverse voltage (VRRM) of 100 V, very low forward voltage (typically below 0.5 V at rated current), low reverse leakage current, and fast reverse recovery. The SO-FL (Small-Outline Flat-Lead) package provides a low-profile footprint with an integrated thermal tab, achieving low junction-to-case thermal resistance. The device is rated for automotive and other harsh-environment applications requiring AEC-Q101 qualification.
Architecturally, the trench Schottky cell uses a vertical etched-trench cathode geometry that narrows the Schottky barrier width, reducing forward drop and improving current spreading. Compared to planar Schottky rectifiers of equivalent rating, this trench design reduces conduction loss by 15-30%, directly translating to lower power dissipation and smaller heatsink requirements in switching power supply output stages.
Typical applications include switching power supply output rectification, freewheeling diodes in DC-DC converters, OR-ing and reverse-polarity protection in 48 V telecom and automotive subsystems, solar micro-inverter output stages, and motor drive inductive-clamp circuits. The combination of low VF and 100 V rating makes it especially suitable as a secondary-side rectifier in high-efficiency SMPS and as a blocking diode in battery-backup systems.
When designing with this part, verify that the peak inverse voltage (PIV) of the application does not exceed 100 V including any inductive ringing transients, and confirm that the average forward current stays within 10 A after derating for ambient temperature and cooling conditions. The exposed tab must be soldered to a sufficiently large copper pour to keep junction temperature below 150 C.
This page synthesizes distributor pricing from 17 sources, drop-in alternative cross-references, and practical design notes not consolidated in the onsemi datasheet alone, giving power-design engineers a one-stop selection resource.
Drop-in-Alternativen für NRVTS10100MFST1G – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NTS10100MFST1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NRVTS10100EMFST1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NRVTS10100MFST3G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NRVTS10100MFST1G Grenzwerte & elektrische Eigenschaften
| Manufacturer | onsemi (ON Semiconductor) |
| Series | NRVTS10100MFS |
| Diode Type | Schottky (Trench-based) |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 100 V |
| Average Rectified Forward Current (IF(AV)) | 10 A |
| Reverse Recovery Time (trr) | Negligible (Schottky, no minority carrier storage) |
| Package Type | SO-FL (Small-Outline Flat-Lead), 5-Pin (4+Tab) |
| Package Outline Code | 8-PowerTDFN, 5 Leads (5x6 mm) |
| Montageart | Surface Mount |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C (typical for trench Schottky) |
| Automotive Qualification | AEC-Q101 qualified (NRV prefix indicates automotive grade) |
| RoHS Compliance | Compliant (per onsemi product page) |
| Tape and Reel Packaging | Tape and Reel (TR), suffix T1G |
| Polarity | Single diode, cathode to tab |
NRVTS10100MFST1G Pin-Konfiguration
| Pin 1 | Anode — Diode anode (positive terminal) |
| Pin 2 | Anode — Diode anode (positive terminal, paralleled with pin 1) |
| Pin 3 | Anode — Diode anode (positive terminal, paralleled with pin 1 and 2) |
| Pin 4 | Anode — Diode anode (positive terminal, paralleled with pins 1, 2, 3) |
| Pin 5 | Cathode / Tab — Diode cathode and primary thermal pad (exposed tab) |
Forward Current vs Forward Voltage
Typische Anwendungen
NRVTS10100MFST1G ist geeignet für 6 Anwendungs: Switching Power Supply Output Rectification, Freewheeling Diode in DC-DC Converters, Reverse-Polarity Protection, OR-ing and Battery Backup Systems, Solar Micro-Inverter Output Stage, Inductive Clamp and Snubber Circuits.
Switching Power Supply Output Rectification
The NRVTS10100MFST1G is an excellent choice for the secondary-side output rectifier in AC-DC and DC-DC switching power supplies operating below 100 V. Its trench Schottky architecture delivers a forward voltage typically 15-30% lower than equivalent planar Schottky rectifiers, directly reducing conduction loss and improving overall efficiency by 1-2%. At 10 A average forward current with the SO-FL package's integrated thermal tab, designers can achieve high-current rectification without a discrete heatsink, provided the PCB copper pad area is sized to keep junction temperature below 125 C. The device's negligible reverse recovery time eliminates the switching loss that slows down high-frequency (>100 kHz) rectifiers, making it ideal for compact, high-efficiency adapters and brick converters.
Empfohlen
Freewheeling Diode in DC-DC Converters
As a freewheeling (or flyback) diode in buck, boost, and buck-boost converters, the NRVTS10100MFST1G's 100 V rating covers 24 V, 36 V, and 48 V bus architectures while its low forward voltage drop minimizes circulating current losses. The trench Schottky structure provides exceptionally stable switching characteristics across -55 C to +150 C, ensuring predictable converter behavior over automotive and industrial temperature ranges. With 10 A average current handling and negligible reverse recovery, this diode allows converters to operate efficiently at switching frequencies up to several hundred kHz. The compact SO-FL 5x6 mm footprint enables high power density designs where board space is at a premium.
Empfohlen
Reverse-Polarity Protection
The NRVTS10100MFST1G is well suited for reverse-polarity protection at the input of 12 V, 24 V, and 48 V systems, where its 100 V reverse rating provides comfortable headroom for load-dump transients in automotive and industrial applications. The trench Schottky's low forward voltage (typically under 0.5 V at rated current) keeps the protection path loss low compared to a PFET ideal-diode circuit, simplifying the BOM. AEC-Q101 qualification of the NRVTS variant ensures the protection diode survives the harsh automotive environment, including temperature cycling, humidity, and vibration. The SO-FL package's low-profile footprint and integrated thermal tab allow the diode to be placed directly at the input connector for clean PCB layout.
Empfohlen
OR-ing and Battery Backup Systems
For OR-ing two power sources such as a main supply and a battery backup, the NRVTS10100MFST1G provides a low-loss path that minimizes the voltage drop between the source and the load. The trench Schottky's reverse leakage current at 100 V is significantly lower than planar alternatives, which is critical for battery-backup systems where standby drain directly impacts battery life. The 10 A current rating handles most rack-mount and telecom loads. Combined with a small microcontroller for source arbitration, the design can approach ideal-diode performance at a fraction of the cost of dedicated hot-swap controllers. The SO-FL package fits cleanly between the input connectors and the downstream DC-DC converter.
Empfohlen
Solar Micro-Inverter Output Stage
In low-voltage solar micro-inverter and power-optimizer applications, the NRVTS10100MFST1G serves as an efficient output blocking rectifier between the converter and the DC bus. The 100 V reverse rating covers 24 V and 48 V panel configurations, and the 10 A continuous current rating supports module-level power outputs up to several hundred watts. The trench Schottky's low forward voltage drop directly improves the converter's CEC-weighted efficiency, helping designs meet regulatory energy standards. The automotive-grade NRVTS variant's AEC-Q101 qualification is a strong fit for outdoor solar installations where temperature swings are large and humidity is high. The compact SO-FL package keeps the BOM footprint small for integration into module junction boxes.
Empfohlen
Inductive Clamp and Snubber Circuits
The NRVTS10100MFST1G functions effectively as a clamping or snubber diode across inductive loads such as relays, solenoids, and motor windings. The 100 V reverse rating handles the back-EMF generated when switching 24 V or 48 V inductive loads, and the 10 A peak current rating absorbs the demagnetization energy. The trench Schottky's fast turn-on characteristic and negligible reverse recovery ensure clamping action begins immediately when the inductive kick occurs, protecting downstream MOSFETs or transistors from voltage overshoot. The AEC-Q101 automotive qualification of the NRVTS variant supports under-hood and chassis-mounted applications where temperature and vibration are severe. The SO-FL package's small footprint simplifies routing the clamp network close to the inductive load.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NRVTS10100MFST1G – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NTS10100MFST1G | NRVTS10100EMFST1G | NRVTS10100MFST3G |
|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi |
| Package | SO-FL (8-PowerTDFN, 5 Leads, 5x6 mm) | SO-FL (8-PowerTDFN, 5 Leads, 5x6 mm) - same | SO-FL (8-PowerTDFN, 5 Leads, 5x6 mm) - same | SO-FL (8-PowerTDFN, 5 Leads, 5x6 mm) - same |
| Maximum Reverse Voltage (VRRM) | 100 V | 100 V | 100 V | 100 V |
| Average Forward Current (IF(AV)) | 10 A | 10 A | 10 A | 10 A |
| Automotive Qualification (AEC-Q101) | Yes (NRV prefix) | No (industrial grade) | Yes (NRV prefix) | Yes (NRV prefix) |
| Reverse Leakage Variant | Standard leakage | Standard leakage | Very low leakage (E suffix) | Standard leakage |
| Reel Pack Quantity | 1000 pcs (T1 suffix) | 1000 pcs (T1) | 1000 pcs (T1) | 3000 pcs (T3) |
| Diode Technology | Trench Schottky | Trench Schottky | Trench Schottky (low-leakage) | Trench Schottky |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 automotive qualification (vs. NTS10100MFST1G)
- Trench Schottky technology (vs. Planar Schottky rectifiers of equivalent rating)
- Low reverse leakage option in same footprint (vs. NRVTS10100MFST1G vs NRVTS10100EMFST1G)
Designhinweise
Estimated: at full 10 A forward current with VF = 0.6 V, the diode dissipates approximately 6 W. The SO-FL package's exposed thermal tab must be soldered to at least 0.5 square inch of 2 oz copper to keep junction-to-ambient thermal resistance below 30 C/W. Without adequate copper heatsinking, junction temperature can exceed 150 C and trigger thermal failure. For continuous operation at maximum rated current, consider adding thermal vias under the tab to conduct heat to inner copper planes or an internal heatsink layer.
The SO-FL package requires direct soldering of the central exposed tab (pin 5 / cathode) to a copper pad on the top layer. Place an array of thermal vias (0.3 mm drill, 0.6 mm pad, 1 mm pitch) directly under the tab to conduct heat into inner copper layers. Use a 10 mil NSMD pad for the four anode pins and a continuous copper pour on the cathode side. Keep the diode's switching loop (anode-to-cathode) area minimal to reduce parasitic inductance and voltage overshoot during reverse recovery.
Do not apply reverse voltages exceeding 100 V, including any inductive ringing overshoot; add an RC snubber or TVS clamp across the diode in high-dV/dt applications. Verify the average forward current against the derating curve at the application's maximum ambient temperature - the 10 A rating is typically at TC = 150 C, not at room temperature. Do not use this part above 150 C junction temperature. The NRV prefix indicates AEC-Q101 qualification; use the NRVTS10100 variant for automotive designs and the NTS10100 variant only for industrial/consumer designs.
Compliance-Informationen
RoHS compliant per onsemi product page. AEC-Q101 automotive qualified (NRV prefix). Lead-free and halogen-free reflow compatible per MSL-1 rating. Conflict-mineral declaration available from onsemi.
