PEMB10 - 50V 100mA PNP/PNP Resistor-Equipped Double Transistor | Nexperia
Teilenummer: PEMB10 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.24 | $24,00 |
| 500 | $0.19 | $95,00 |
| 1.000 | $0.15 | $150,00 |
| 4.000 | $0.11 | $440,00 |
PEMB10 Übersicht
A resistor-equipped transistor (RET), also called a digital transistor or bias-resistor built-in transistor, is a BJT with monolithic base and base-emitter resistors. RETs sit within the broader hierarchy of bipolar transistors (BJT) -> discrete semiconductors -> semiconductors, and are widely adopted as interface buffers between microcontrollers, logic gates, and low-power relays, solenoids, or LED arrays. The integrated R1/R2 ratio (2.2 kΩ / 47 kΩ) sets the base bias for guaranteed switching from standard 5 V logic levels without external components.
Key features include two electrically isolated PNP elements, straight leads for excellent coplanarity, an ultra-thin 0.55 mm package profile for height-constrained designs, and compliance with RoHS. The SOT-666 package offers a footprint reduction versus two discrete SC-75/SC-89 transistors, lowering board area by approximately 50 percent and reducing required board space. The PEMB10 is also offered as an AEC-Q100 automotive variant (PUMB10) for automotive qualified designs.
The PEMB10 uses monolithic silicon BJT construction with integrated thin-film resistors. Each transistor operates as a switch or linear element; the internal R1/R2 ratio sets the base current threshold so that a logic-high signal at the base produces predictable saturation. The double-die configuration provides matched characteristics between the two elements, which is valuable in differential switching or push-pull signal conditioning.
Typical applications include load interface for microcontrollers, level shifters between logic domains, gate-driver signal conditioning, LED drivers in indicator panels, relay and solenoid drivers, and bus line biasing. The PEMB10 is also used in industrial control modules and consumer appliances requiring compact, low-component-count driver stages. Automotive versions (PUMB10) target body electronics and HVAC control modules where AEC-Q100 is required.
When designing with the PEMB10, consider the integrated resistor values to calculate base drive current and verify that the driving logic source can supply sufficient base current through R1 (2.2 kΩ). Add a base-emitter resistor externally only if faster turn-off is required; the built-in R2 (47 kΩ) provides a default bias path. Observe the 300 mW total dissipation limit when both transistors conduct simultaneously.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical interface design guidance not consolidated on the Nexperia datasheet alone, providing engineers with a single decision-ready reference for selecting the PEMB10 in low-power digital interface applications.
Drop-in-Alternativen für PEMB10 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
PEMB10,115
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
PUMB10
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
PEMB9
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
PEMB11
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
PUMB11
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
PEMH11
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
PEMB10 Grenzwerte & elektrische Eigenschaften
| Transistortyp | PNP/PNP Resistor-Equipped (RET, double) |
| Configuration | Separate, 2 elements with built-in resistor |
| Built-in Base Resistor R1 | 2.2 kΩ |
| Built-in Base-Emitter Resistor R2 | 47 kΩ |
| Kollektor-Emitter-Spannung (Vceo) | 50 V |
| Maximum Collector Current IC | 100 mA (per element) |
| Total Power Dissipation Ptot | 300 mW |
| Gehäuse | SOT-666 (SS-Mini) |
| Package Profile | 0.55 mm ultra-thin |
| Montageart | Surface Mount |
| Transistor Element Material | Silicon |
| Channel Type | PNP |
| RoHS-Status | Compliant |
| Automotive Qualified Variant | PUMB10 (AEC-Q100) |
PEMB10 Pin-Konfiguration
| Pin 1 | Emitter 1 — Emitter of PNP transistor 1 (TR1) |
| Pin 2 | Base 1 — Base of PNP transistor 1 (TR1) with internal R1 = 2.2 kΩ to pin 1 and R2 = 47 kΩ to pin 3 |
| Pin 3 | Collector 1 — Collector of PNP transistor 1 (TR1) |
| Pin 4 | Emitter 2 — Emitter of PNP transistor 2 (TR2) |
| Pin 5 | Base 2 — Base of PNP transistor 2 (TR2) with internal R1 = 2.2 kΩ to pin 4 and R2 = 47 kΩ to pin 6 |
| Pin 6 | Collector 2 — Collector of PNP transistor 2 (TR2) |
Typische Anwendungen
PEMB10 ist geeignet für 6 Anwendungs: Microcontroller Load Interface Buffer, LED Indicator and Panel Driver, Logic Level Shifter and Signal Conditioner, Automotive Body Control Module Interface (PUMB10 variant), Relay and Solenoid Driver Stage, Bus Line Biasing and Pull-Up/Pull-Down Networks.
Microcontroller Load Interface Buffer
The PEMB10's integrated R1 = 2.2 kΩ base resistor accepts direct 5 V microcontroller GPIO drive without external components, making it ideal for buffering MCU outputs to relays, solenoids, or higher-current loads. With 100 mA collector current per element and 50 V VCEO rating, each PNP transistor can switch small signal relays or low-power DC loads from a 3.3 V or 5 V logic rail. The SOT-666 (SS-Mini) 0.55 mm ultra-thin package fits height-constrained designs like compact consumer appliances, IoT edge modules, and wearable electronics. Compared to discrete PNP + external resistor implementations, the PEMB10 reduces component count by 50% and saves PCB area, while the matched PNP/PNP pair provides predictable switching thresholds across both elements.
Empfohlen
LED Indicator and Panel Driver
The PEMB10 suits low-current LED indicator driving with its 100 mA collector current and 50 V VCEO headroom for driving LEDs from 5 V, 12 V, or 24 V rails. Each PNP element can switch indicator LEDs at 10-20 mA typical operating current, with the internal R2 = 47 kΩ providing a defined off-state bias to prevent LED glow under logic-low conditions. The matched dual-PNP configuration supports paired indicator channels (e.g., status LEDs in opposite states). For panel arrays requiring more channels, multiple PEMB10 devices can be paralleled in a compact SOT-666 footprint. The integrated bias network eliminates the base resistor + discrete PNP pair typically required, reducing assembly time and BOM cost in consumer electronics and industrial HMI panels.
Empfohlen
Logic Level Shifter and Signal Conditioner
The PEMB10 functions as a simple logic-level shifter or signal conditioner between low-voltage microcontrollers and higher-voltage analog or power stages. With 50 V VCEO, each PNP transistor can level-shift a 3.3 V logic signal to a 12 V or 24 V rail for downstream MOSFET gates, optocouplers, or relay coils. The integrated R1 = 2.2 kΩ provides the base drive current limit, while R2 = 47 kΩ ensures defined bias under floating conditions. The matched dual-PNP configuration enables differential signal conditioning for sensors or communication line buffering. Compared to dedicated level-shifter ICs, the PEMB10 offers a simpler two-component-per-channel solution with predictable BJT switching characteristics.
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Automotive Body Control Module Interface (PUMB10 variant)
The PUMB10, the AEC-Q100 automotive-qualified variant of the PEMB10, targets body control modules (BCMs), HVAC panels, and interior lighting controllers in vehicles. With identical SOT-666 footprint, 50 V VCEO, 100 mA collector current, and R1 = 2.2 kΩ / R2 = 47 kΩ biasing as the PEMB10, the PUMB10 enables drop-in qualification upgrade for automotive designs. Each PNP element drives relay coils, LED indicators, or low-power solenoids from 5 V or 12 V automotive rails. AEC-Q100 qualification ensures operation across -40°C to +125°C automotive temperature range. This application targets interior electronics where automotive-grade reliability is mandatory, replacing discrete PNP + resistor pairs in space-constrained modules.
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Relay and Solenoid Driver Stage
The PEMB10 drives small signal relays and solenoids in industrial control and consumer appliance applications. With 100 mA collector current per element and 50 V VCEO, each PNP transistor can switch 5 V or 12 V relay coils at typical pull-in currents of 30-70 mA. The integrated R1 = 2.2 kΩ base resistor accepts direct logic drive, while R2 = 47 kΩ provides the leakage path to prevent false triggering during MCU reset. The matched PNP/PNP pair enables dual-coil relay drivers or H-bridge auxiliary stages in compact form factor. Compared to discrete PNP drivers, the PEMB10 simplifies PCB layout and reduces component count in HVAC controllers, washing machines, and industrial automation modules.
Empfohlen
Bus Line Biasing and Pull-Up/Pull-Down Networks
The PEMB10 serves as a compact bus line biasing element in communication interfaces, signal conditioning paths, and discrete logic translation networks. The internal PNP transistor with R2 = 47 kΩ base-emitter resistor provides a defined bias path for slow-speed signal lines, while the integrated R1 = 2.2 kΩ limits base current during transient events. With 50 V VCEO tolerance, the PEMB10 withstands industrial bus voltage transients on 24 V or 36 V signal rails. The dual-PNP configuration supports differential biasing for RS-485 or CAN bus auxiliary circuits where matched characteristics are valuable. This application replaces discrete resistor + PNP pairs in factory automation and building control networks.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für PEMB10 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | PEMB10,115 | PUMB10 | PEMB9 | PEMB11 |
|---|---|---|---|---|---|
| Package | SOT-666 (SS-Mini) | SOT-666 (SS-Mini) - same | SOT-666 (SS-Mini) - same | SOT-666 (SS-Mini) - same | SOT-666 (SS-Mini) - same |
| Brand | Nexperia | Nexperia - same | Nexperia - same | Nexperia - same | Nexperia - same |
| Transistor Configuration | PNP/PNP (double) | PNP/PNP (double) - identical | PNP/PNP (double) - identical | PNP/PNP (double) - identical | PNP/PNP (double) - identical |
| Built-in R1 (base resistor) | 2.2 kΩ | 2.2 kΩ - identical | 2.2 kΩ - identical | 10 kΩ (+355%) | 2.2 kΩ - same |
| Built-in R2 (base-emitter resistor) | 47 kΩ | 47 kΩ - identical | 47 kΩ - identical | 47 kΩ - same | 47 kΩ - same |
| VCEO (Collector-Emitter Voltage) | 50 V | 50 V - identical | 50 V - identical | 50 V - same | 50 V - same |
| Collector Current (per element) | 100 mA | 100 mA - identical | 100 mA - identical | 100 mA - same | 100 mA - same |
| Total Power Dissipation | 300 mW | 300 mW - identical | 300 mW - identical | 300 mW - same | 300 mW - same |
| Automotive Qualified (AEC-Q100) | No | No | Yes | No | No |
Wichtigste Unterscheidungsmerkmale
- Integrated dual PNP/PNP bias resistors eliminate four external components (vs. Discrete PNP + external resistor pairs)
- Automotive-qualified drop-in variant available (vs. PEMB10 standard vs PUMB10 AEC-Q100)
- Wide VCEO headroom supports industrial 24 V rail switching (vs. Lower VCEO competing RETs (e.g., 30 V or 40 V parts))
Designhinweise
The PEMB10's 300 mW total power dissipation applies at 25°C ambient and must be derated linearly to zero at maximum junction temperature (typically 150°C). With SOT-666 thermal resistance of approximately 416 C/W, the device dissipates only ~300 mW before requiring significant copper pour. For dual-transistor operation, sum both transistor dissipations; do not exceed the 300 mW envelope. In typical switching applications with low duty cycle, average dissipation is well below this limit.
The SOT-666 (SS-Mini) package has a 0.55 mm ultra-thin profile with straight leads for excellent coplanarity. Per the Nexperia datasheet, recommended PCB land pattern uses 0.30 mm pad width and 0.40 mm pitch. Ensure reflow soldering follows JEDEC J-STD-020 MSL1 handling, and avoid mechanical flex of the substrate near the SOT-666 footprint to prevent lead cracking. The exposed lead-frame on the bottom should not be soldered to a thermal pad unless explicitly recommended in the datasheet.
Do not apply signals to the base without considering the integrated 2.2 kΩ R1 resistor - the driving logic source must source sufficient current through R1 to saturate the PNP transistor. Calculate base current as I_B ≈ (V_LOGIC - V_BE) / R1; for 5 V drive, I_B ≈ (5 - 0.65) / 2200 ≈ 2 mA, sufficient for 100 mA collector current with hFE ≈ 50. Ensure the driving source can supply this base current continuously. Do not exceed 50 V VCEO or the device will enter avalanche breakdown.
Compliance-Informationen
RoHS compliant per Nexperia product page. Standard PEMB10 is not AEC-Q100 qualified - choose PUMB10 for automotive. Lead-free and halogen-free per Nexperia packaging specifications.
