SI4123-BT - 1.8 GHz Dual-Band RF Synthesizer | Silicon Labs
Teilenummer: SI4123-BT ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
SI4123-BT Übersicht
A frequency synthesizer generates or controls a stable reference-related output by combining a phase-locked loop, voltage-controlled oscillator, and frequency-setting network. In wireless equipment, this type of RF synthesizer establishes the local oscillator used by transmit and receive signal chains. The SI4123-BT integrates multiple RF oscillator functions into one IC, reducing board area and external-component count while keeping the RF frequency-generation function close to the system antenna and transceiver circuitry.
Key verified features include integrated VCOs, integrated loop filters, integrated varactors, integrated resonators, programmable power-down modes, low phase noise, a 1 uA standby current, and approximately 18 mA typical supply current. The available data also identifies 3.6 V operation and a 24-pin TSSOP package. Exact tuning range, phase-noise curves, control-interface details, temperature limits, and output-power specifications are not provided in the verified search data and must be confirmed from the manufacturer datasheet before design release.
The SI4123-BT is suited to wireless communication modules, RF transceivers, frequency-generation circuits, industrial RF equipment, and compact embedded radio systems. Its integrated architecture can help reduce component count in designs where PCB area is constrained. The 24-TSSOP footprint is also convenient for conventional surface-mount assembly, although RF layout remains critical because high-frequency interconnects and supply-return paths can affect oscillator performance.
The primary design consideration is to verify the complete electrical and timing envelope against the current Silicon Labs datasheet. Place the device according to the recommended decoupling and grounding arrangement, keep the RF output path short, and avoid routing sensitive oscillator and feedback nets beneath or beside unrelated switching nodes. Confirm the required external resistor, capacitor, and reference values before manufacturing; the verified data does not provide those values.
This page summarizes verified distributor specifications, package information, and practical design considerations for the SI4123-BT. It does not invent missing electrical parameters, pricing, pin functions, lifecycle claims, or drop-in replacements that cannot be verified from the supplied sources.
Drop-in-Alternativen für SI4123-BT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit SI4123-BT (gleiche Bauform und Footprint) – abweichend in RoHS Status, Device Type, Integrated VCOs, Package, Standby Current.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SI4123-D-GTR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI4123-D-GT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →SI4123-D-GMR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI4123-BT Technische Daten
| Device Type | Frequency synthesizer IC |
| Product Description | Dual-band RF synthesizer with integrated VCOs |
| Maximum Frequency | 1.8 GHz |
| Supply Voltage Range | 2.7 V to 3.6 V |
| Operation Voltage | 3.6 V |
| Gehäuse | 24-pin TSSOP, 0.173 inch, 4.40 mm width |
| Input-to-Output Ratio | 1:2 |
| Integrated VCOs | Yes |
| Integrated Loop Filters | Yes |
| Integrated Varactors | Yes |
| Integrated Resonators | Yes |
| Minimum External Components | 2 external components |
| Power-Down Modes | Programmable |
| Standby Current | 1 uA |
| Typical Supply Current | 18 mA |
| Montageart | Surface mount |
| RoHS-Status | unknown |
| REACH Status | unknown |
| AEC-Q100 Status | unknown |
SI4123-BT 24-pin tssop, 0.173 inch, 4.40 mm width Pinbelegungsleitfaden
Pinbelegung für SI4123-BT (24-pin tssop, 0.173 inch, 4.40 mm width-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für SI4123-BT.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
SI4123-BT ist geeignet für 6 Anwendungs: Wireless RF Transceiver Frequency Generation, Compact Wireless Communication Module, Industrial RF Data Link, Battery-Powered RF Sensor Node, RF Instrumentation and Test Equipment, RF Front-End Local Oscillator.
Wireless RF Transceiver Frequency Generation
The SI4123-BT fits wireless RF transceiver modules that require an integrated local-frequency synthesizer. Its verified 1.8 GHz device classification and integrated VCOs, loop filters, varactors, and resonators help reduce the RF component count around the transceiver. The 2.7 V to 3.6 V supply range is suitable for systems designed around the stated 3.6 V operating point. The designer must confirm the exact frequency band, reference input, output level, and loop settings in the datasheet. RF layout should keep the synthesizer path short, preserve controlled impedance, and isolate it from switching and digital return currents.
Empfohlen
Compact Wireless Communication Module
The SI4123-BT is applicable to compact wireless modules where RF functions must be integrated without increasing board area unnecessarily. The verified description states that only two external components are required because the VCOs, loop filters, varactors, and resonators are integrated. This can simplify the RF subassembly and reduce assembly steps. The tradeoff is that the integrated architecture still requires disciplined decoupling, grounding, and impedance-controlled routing. The 24-pin TSSOP package supports standard surface-mount assembly, but the complete pinout and layout recommendations must be obtained from the manufacturer documentation before release.
Empfohlen
Industrial RF Data Link
The SI4123-BT can support frequency-generation functions in industrial RF data links when its verified frequency and supply requirements match the system plan. Its integrated synthesizer functions may help reduce discrete RF parts and board-level complexity. Industrial equipment may also impose extended-temperature, EMC, and regulatory requirements that are not specified in the supplied data; confirm these conditions before selecting the device. Keep the RF section physically separated from motors, relays, switching converters, and high-current power stages. A grounded reference and controlled supply return are particularly important when the synthesizer shares a board with industrial electronics.
Empfohlen
Battery-Powered RF Sensor Node
The SI4123-BT may be considered for battery-powered RF sensor nodes that transmit or receive on a compatible supported band. The verified 1 uA standby current is useful for low-power state planning, while the approximately 18 mA typical supply current provides a starting point for active-state budgeting. Actual battery life depends on transmit duty cycle, output state, regulator efficiency, and RF activity. The synthesizer should be enabled only when required, and the supply should be arranged to avoid unwanted RF modulation or unwanted signal generation during standby. Confirm the exact current behavior and mode settings in the manufacturer datasheet.
Empfohlen
RF Instrumentation and Test Equipment
The SI4123-BT can be used in RF instrumentation when the instrument requires a programmable or controlled RF frequency source and the supported operating conditions match. The integrated VCOs and passive RF elements may reduce the number of external components in the source section, while the 24-TSSOP package simplifies assembly compared with a larger RF module. Instrument designs should account for phase noise, tuning accuracy, output power, and temperature behavior; those parameters are not supplied in the verified data. Use shielded or appropriately partitioned RF layout where leakage, unwanted coupling, or measurement noise could affect results.
Empfohlen
RF Front-End Local Oscillator
The SI4123-BT is a candidate for a local-oscillator function in an RF front end because the verified data identifies it as a dual-band RF synthesizer with integrated VCOs. Integration can shorten the distance between the synthesizer and the RF front end, potentially reducing parasitic routing effects, but the actual performance depends on the selected frequency and network. The output path should use controlled impedance, short connections, and a ground reference that avoids shared noisy return paths. Confirm whether the intended architecture requires a single-ended or differential RF connection and verify every pin before layout.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SI4123-BT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SI4123-D-GTR | SI4123-D-GT | SI4123-D-GMR |
|---|---|---|---|---|
| Device Type | Frequency synthesizer IC | Frequency synthesizer | Frequency synthesizer | Frequency synthesizer |
| Brand | Silicon Labs | Skyworks Solutions Inc | Skyworks Solutions Inc | Skyworks Solutions Inc |
Wichtigste Unterscheidungsmerkmale
- Integrated dual-band RF synthesizer architecture (vs. SI4123-D-GTR)
- Documented low-power operating points (vs. SI4123-D-GT)
- Common 24-TSSOP footprint family (vs. SI4123-D-GTR)
Designhinweise
Keep the SI4123-BT RF connections short and use controlled impedance where the circuit operates at high frequency. Route the oscillator, feedback, and reference-related nets away from switching-node traces and digital return paths. Because the verified data identifies integrated resonators and varactors, the external RF network is part of the tuning system rather than a simple power connection. Confirm the manufacturer reference layout and land pattern before release.
Provide a stable 2.7 V to 3.6 V supply and place decoupling capacitors close to the relevant supply and ground pins according to the manufacturer recommendations. The verified data gives 1 uA standby current and approximately 18 mA typical supply current, which are useful for initial power budgeting. Do not assume the typical current is a maximum; verify startup, mode-dependent current, and regulator transient behavior in the complete design.
Do not substitute a functionally similar frequency synthesizer solely because it is labeled TSSOP-24. The available comparison data confirms related SI4123-family parts but does not fully verify pin compatibility, frequency range, tuning method, output configuration, or control timing. Compare the complete manufacturer pinouts and electrical tables, then validate the RF network and calibration procedure on hardware before approving a replacement.
Use a continuous, low-impedance ground reference around the RF section and separate noisy power-converter return currents from sensitive oscillator returns. The verified description identifies only two required external components, but the exact component values are not provided. Copy the manufacturer reference values and layout exactly, then inspect the assembled board for soldering errors and unintended RF coupling during bring-up.
Compliance-Informationen
The supplied search data does not explicitly establish compliance for the exact SI4123-BT MPN. A related comparison snippet describes another SI4123-family part as RoHS compliant, but that is not transferred to SI4123-BT.
