SI8286CD-ISR - 4A Isolated SiC/IGBT Gate Driver | Skyworks
Teilenummer: SI8286CD-ISR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.32 | $43,20 |
| 100 | $3.78 | $378,00 |
| 500 | $3.35 | $1.675,00 |
| 1.000 | $2.96 | $2.960,00 |
SI8286CD-ISR Übersicht
An isolated gate driver is a power-management semiconductor that provides a galvanically isolated control signal between a low-voltage controller (MCU, FPGA, or DSP) and a high-voltage power switch (IGBT, SiC MOSFET, or GaN FET). The isolation barrier protects the controller from fast voltage transients (dV/dt) generated by the switching power stage, while delivering the high peak gate current needed to charge and discharge the gate capacitance quickly. Isolated drivers sit in the broader power management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor.
Key features include 4 A peak source and sink drive current, an integrated isolated DC-DC converter bias supply on the output side, 5000 Vrms reinforced isolation per UL 1577, and a wide operating temperature range from -40 C to +125 C. The driver supports switching frequencies up to the multi-hundred-kHz range commonly required by SiC MOSFETs, and offers separate 5 V and 24 V supply inputs for the input and driver sides respectively.
The device uses Skyworks' proprietary capacitive isolation technology rather than optical or inductive coupling, providing robust common-mode transient immunity (CMTI) suited to the high dV/dt edges of SiC switching. The 16-pin wide-body SOIC package provides the creepage and clearance distances required by IEC 60747-17 / UL 1577 reinforced isolation standards, allowing the part to be used in 600 V to 1700 V class motor drives, solar inverters, and industrial power-conversion stages.
Typical applications include EV traction inverters, industrial motor drives, solar string inverters, on-board chargers, and high-density telecom DC-DC converters. The driver is well suited for driving SiC MOSFETs in half-bridge and full-bridge topologies where the upper switch requires true galvanic isolation from the low-voltage control side.
When designing with this part, verify that the gate-drive supply rails (VCC1 and VCC2) are well decoupled and that the high-side bootstrap or isolated supply has sufficient headroom for the target SiC/IGBT gate voltage. The wide-body SOIC footprint also requires careful creepage management on the PCB and an adequate ground plane under the driver to dissipate switching losses.
This page synthesizes distributor stock, drop-in alternatives, parametric comparisons, and design notes that are not collected on a single manufacturer page, giving engineers a faster starting point for sourcing and second-sourcing the SI8286CD-ISR.
Drop-in-Alternativen für SI8286CD-ISR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SI8286CD-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8286BD-ISR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8286BC-ISR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8285BD-ISR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8285CD-ISR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8286CD-ISR Grenzwerte & elektrische Eigenschaften
| Product Type | Galvanically Isolated Gate Driver |
| Number of Channels | 1 |
| Peak Output Current | 4 A |
| Isolation Type | Capacitive Coupling |
| Isolation Voltage (rms) | 5000 Vrms |
| Gehäuse | 16-SOIC (Wide-Body, WB) |
| Montageart | Surface Mount |
| Betriebstemperatur | -40 C to +125 C |
| MSL-Level | 3 |
| RoHS-Status | Compliant |
| Peak Reflow Temperature | 260 C |
SI8286CD-ISR Pin-Konfiguration
| Pin 1 | VDD1 — Input-side 5V supply |
| Pin 2 | GND1 — Input-side ground |
| Pin 3 | PWM — PWM input from controller |
| Pin 4 | FLT_BN — Active-low fault indicator (open-drain) |
| Pin 5 | RST_BN — Active-low reset input |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | VDD2 — Output-side gate-drive supply |
| Pin 10 | GND2 — Output-side ground |
| Pin 11 | OUT — Gate-drive output (combined pull-up/pull-down) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | NC — Not connected (per datasheet) |
Typische Anwendungen
SI8286CD-ISR ist geeignet für 6 Anwendungs: EV Traction Inverter (SiC Drive), Solar String Inverter, Industrial Motor Drive (IGBT/SiC), On-Board Charger (OBC), High-Density Telecom DC-DC Converter, Welding and Plasma Power Supplies.
EV Traction Inverter (SiC Drive)
The SI8286CD-ISR's 5000 Vrms capacitive isolation and 4 A peak gate current make it ideal for driving 1200 V SiC MOSFETs in EV traction inverters. With switching edges that can exceed 50 kV/us, the part's high CMTI immune to common-mode transients keeps the low-voltage MCU side safe while delivering the fast gate-charge that SiC devices demand for low switching loss. Designers pair the driver with 1200 V SiC half-bridge modules and rely on the SOIC-16 WB footprint to meet IEC 60747-17 reinforced isolation creepage. Compared to optocoupler drivers, capacitive isolation eliminates ageing drift and offers tighter propagation-delay matching between channels, which is essential for paralleled SiC modules in 100 kW+ traction systems.
Empfohlen
Solar String Inverter
In 1500 V solar string inverters the SI8286CD-ISR drives SiC MOSFETs in the DC-DC boost and DC-AC stages, where the 5000 Vrms isolation barrier provides reinforced isolation per UL 1577. The 4 A peak output shortens the SiC switching transition, raising inverter efficiency above 99 percent and reducing heatsink size. The wide-body SOIC-16 footprint maintains 8 mm creepage, supporting 1500 V DC bus designs without an additional isolation slot in the PCB. The driver's integrated VCC2 isolated bias simplifies BOM, removing an external DC-DC bias supply that competing gate drivers require for the high-side switch.
Empfohlen
Industrial Motor Drive (IGBT/SiC)
Industrial servo drives and variable-frequency motor drives use the SI8286CD-ISR to drive 600 V/1200 V IGBT modules and SiC MOSFETs in three-phase inverters. The 4 A peak source and sink current switches 600 V IGBTs at 20 kHz with low dynamic losses, while 5000 Vrms isolation protects the 3.3 V MCU control side from phase-leg dV/dt events. Engineers value the driver's wide operating temperature range of -40 C to +125 C, which is suitable for cabinet-mounted industrial drives. The 16-SOIC WB package also simplifies PCB layout versus gate-driver transformer designs, allowing the part to drop into standard IGBT module adapter boards.
Empfohlen
On-Board Charger (OBC)
In 22 kW on-board EV chargers the SI8286CD-ISR drives SiC MOSFETs in the totem-pole PFC stage, where 5000 Vrms isolation separates the high-voltage battery bus from the 12 V vehicle network. The 4 A peak output handles the high gate-charge of 1200 V SiC devices, while capacitive isolation rejects the fast dV/dt of totem-pole switching. The driver's integrated VCC2 supply removes the need for a separate isolated bias, reducing OBC PCB area and BOM cost. AEC-Q100 grade equivalents in the same SOIC-16 WB footprint are available on request for automotive-qualified charger designs.
Empfohlen
High-Density Telecom DC-DC Converter
Telecom 48 V to 12 V DC-DC bricks use the SI8286CD-ISR to drive 100 V/650 V GaN FETs or SiC MOSFETs in the primary-side full bridge. The 4 A peak current rapidly switches GaN devices at 500 kHz to 1 MHz, shrinking magnetics and raising power density above 100 W per cubic inch. The 5000 Vrms isolation supports the reinforced isolation required by telecom safety standards, allowing the converter to meet IEC 62368-1. The driver's compact 16-SOIC WB package is significantly smaller than gate-driver transformer solutions, enabling the multi-kW converter power levels demanded by AI server and 5G base station power shelves.
Empfohlen
Welding and Plasma Power Supplies
Welding and plasma-cut power stacks use the SI8286CD-ISR to drive 1700 V IGBT modules at switching frequencies of 10-30 kHz, where 5000 Vrms isolation and 4 A peak current keep switching losses low while protecting the welding controller from the high dV/dt of the arc-load transients. The wide-body SOIC-16 package provides sufficient creepage for the harsh industrial environment, and the capacitive barrier rejects the high common-mode noise typical of arc ignitions. Compared to optocoupler drivers, capacitive isolation offers much higher CMTI, which is essential for reliable operation in plasma-cut stacks where dV/dt regularly exceeds 100 kV/us.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SI8286CD-ISR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SI8286CD-IS | SI8286BD-ISR | SI8286BC-ISR | SI8285BD-ISR | SI8285CD-ISR |
|---|---|---|---|---|---|---|
| Brand | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions |
| Package | 16-SOIC (Wide-Body, WB) | 16-SOIC (Wide-Body, WB) - same | 16-SOIC (Wide-Body, WB) - same | 16-SOIC (Wide-Body, WB) - same | 16-SOIC (Wide-Body, WB) - same | 16-SOIC (Wide-Body, WB) - same |
| Isolation Voltage | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms |
| Isolation Type | Capacitive | Capacitive | Capacitive | Capacitive | Capacitive | Capacitive |
| Number of Channels | 1 | 1 | 1 | 1 | 1 | 1 |
| Output Configuration | Combined pull-up/pull-down | Combined pull-up/pull-down | Combined pull-up/pull-down | Combined pull-up/pull-down | Separate pull-up / pull-down | Separate pull-up / pull-down |
| Fault Feedback | Yes (FLT_BN) | Yes (FLT_BN) | Yes (FLT_BN) | Yes (FLT_BN) | Yes (FLT_BN) | Yes (FLT_BN) |
Wichtigste Unterscheidungsmerkmale
- Highest peak drive current in the Si8286 family for high-power SiC/IGBT (vs. SI8286BD-ISR)
- Combined pull-up/pull-down output for simplified PCB routing (vs. SI8285BD-ISR)
- Capacitive isolation barrier with no ageing drift (vs. Optocoupler-based drivers)
- Reinforced 5000 Vrms isolation in wide-body SOIC-16 (vs. Narrow-body SOIC isolated drivers)
Designhinweise
Place the SI8286CD-ISR as close as physically possible to the SiC MOSFET or IGBT gate and source pins to minimize the gate-drive loop inductance. Each nanohenry of loop inductance adds ringing on the gate waveform proportional to the di/dt of the switching edge, and SiC devices with 50 kV/us edges will easily exceed 10 V of gate overshoot through a poorly placed driver. Keep the gate-drive loop under 1 nH by using wide, short traces on both top and inner layers and by placing the gate-source return capacitor immediately adjacent to the driver's GND2 pin.
The SI8286CD-ISR requires separate VCC1 (input side, typically 5 V) and VCC2 (output side, typically 15-20 V for SiC or IGBT gate drive) supplies. Decouple each supply pin with a 100 nF ceramic capacitor placed within 2 mm of the supply pin, plus a bulk 4.7 uF to 10 uF ceramic for switching-current spikes. For SiC MOSFETs requiring a negative gate-drive bias (e.g. -3 V to +18 V), add a small isolated DC-DC or charge-pump bias circuit on the output side; do not rely on a single positive rail to switch SiC cleanly because of miller-induced turn-on risk.
Estimated: at 50 kHz into a SiC MOSFET with 20 nC of gate charge and 18 V gate swing, the gate-drive dissipation in the SI8286CD-ISR is roughly 18 mW (P = Qg * Vgate * fsw), well below the SOIC-16 WB thermal limit. However, total package dissipation must include the quiescent current (typically 10 mW per supply) and the I2R losses in the output stage; combined worst-case dissipation rarely exceeds 200 mW, which the SOIC-16 WB handles at 50 C/W theta_JA on a 1-square-inch copper pour. Above 100 kHz or with very large SiC modules, verify junction temperature using the manufacturer's thermal-resistance derating curve.
Do not assume the SI8286CD-ISR's combined pull-up/pull-down output is identical to a discrete push-pull driver: the combined architecture cannot independently set rise and fall times, so for asymmetric gate drive designs (e.g. slower turn-off to limit dV/dt) select the SI8285 variant with separate pull-up and pull-down pins. Also confirm the PCB creepage distance between the input-side (pins 1-8) and output-side (pins 9-16) pads: the wide-body SOIC footprint provides 8 mm minimum, but additional slotting or PCB cuts may be required to meet IEC 60747-17 in pollution-degree-2 industrial environments.
The 5000 Vrms isolation barrier of the SI8286CD-ISR rejects common-mode noise from high dV/dt switching, but high-frequency EMI can still couple through the PCB to the input pins if they are not properly filtered. Place a ferrite bead and 100 nF bypass on the PWM, FLT_BN, and RST_BN lines, and route input-side traces away from output-side traces to avoid capacitive cross-coupling. For EN 55011 Class A compliance in industrial drives, add a small RC snubber across the driver's GND2-to-output loop and verify emissions at full load with the SiC inverter running at the design switching frequency.
Compliance-Informationen
RoHS and REACH compliant per Skyworks product page. AEC-Q100 automotive grade not qualified by stock; automotive-grade equivalents may be available on request. 5000 Vrms isolation rated per UL 1577 and IEC 60747-17 reinforced isolation.
