SQ2325ES-T1 - 150V P-Ch TrenchFET MOSFET | Vishay | SOT-23
Teilenummer: SQ2325ES-T1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.42 | $42,00 |
| 500 | $0.34 | $170,00 |
| 1.000 | $0.28 | $280,00 |
| 3.000 | $0.22 | $660,00 |
SQ2325ES-T1 Übersicht
A P-Channel MOSFET is a voltage-controlled device in which a negative gate-source voltage (relative to the source) creates a conducting channel between drain and source. As a member of the TrenchFET family, the SQ2325ES-T1 uses a vertical trench-gate cell pitch (sub-micron) that dramatically reduces on-resistance per unit silicon area compared with legacy planar P-Channel devices. The P-Channel topology sits within the broader taxonomy of enhancement-mode MOSFETs, which themselves belong to the power-MOSFET category of discrete semiconductors used for switching and amplification in power management, motor drive, and analog signal-path applications.
Key features of the SQ2325ES-T1 include: 150 V drain-source breakdown voltage (V(BR)DSS), 840 mA continuous drain current (ID) at TC, 3 W power dissipation (PD) at TC, and a typical SOT-23-3 (TO-236) footprint with the standard JEDEC pinout (Pin 1 Gate, Pin 2 Source, Pin 3 Drain). The TrenchFET Gen-IV-style process delivers low on-resistance for the voltage class, and the device is rated to operate across -55 C to +175 C junction temperature, matching automotive under-hood requirements. The -T1 suffix denotes 7-inch tape-and-reel packaging, while the -GE3 suffix denotes lead-free (Pb-free) and RoHS-compliant terminal finish.
Typical applications for the SQ2325ES-T1 include high-side and low-side load switching in automotive body electronics (lighting, HVAC valves, mirror fold), battery protection and reverse-polarity blocking in 12 V/24 V systems, level-shifters and high-side drivers for MCU GPIO, hot-swap insertion circuits, and small-signal analog switches in instrumentation. Its 150 V rating provides substantial headroom over the 12 V and 24 V automotive buses, with ample margin for inductive load transients.
Designers should keep in mind that the SOT-23-3 thermal pad is the drain terminal; PCB copper area connected to the drain pad is the primary heat-dissipation path. For continuous operation above ~500 mA, recommend at least 1 square inch of 2-oz copper on the drain pad to keep junction temperature within safe limits. This page consolidates distributor pricing, qualified drop-in alternatives, and engineering design guidance that augments the manufacturer datasheet.
Drop-in-Alternativen für SQ2325ES-T1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SQ2309ES-T1_BE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQ2325ES-T1_BE3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
SI2333DDS-T1-GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NDT451AN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
DMP3098L-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AO3401A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQ2325ES-T1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Vishay Siliconix |
| Part Number | SQ2325ES-T1 |
| Full Part Number with Suffix | SQ2325ES-T1_GE3 |
| Transistortyp | P-Channel MOSFET |
| Technology | TrenchFET (Gen IV class) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 840 mA (Tc) |
| Power Dissipation (PD) | 3 W (Tc) |
| Gehäuse / Bauform | SOT-23-3 (TO-236) |
| Montageart | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Source, Pin 3 Drain |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C |
| Automotive Qualification | AEC-Q101 |
| Test Coverage | 100% Rg tested, 100% UIS tested |
| Lead-Free / RoHS | Yes (GE3 suffix, Pb-free) |
| Packaging | Tape & Reel, 7-inch (T1) |
SQ2325ES-T1 Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate control input (logic-level drive, VGS(th) negative) |
| Pin 2 | Source — MOSFET source; reference node for VGS |
| Pin 3 | Drain — MOSFET drain; also serves as thermal pad connected to PCB copper for heat dissipation |
Typische Anwendungen
SQ2325ES-T1 ist geeignet für 6 Anwendungs: Automotive Load Switching, Reverse-Polarity Battery Protection, High-Side GPIO Driver / Level Shifter, Hot-Swap Insertion Circuit, Industrial 24 V Solenoid/Valve Driver, Portable / Battery-Powered Power Path Switch.
Automotive Load Switching
The SQ2325ES-T1's 150 V VDS rating and AEC-Q101 qualification make it ideal for high-side and low-side load switching in 12 V/24 V automotive body electronics such as lighting, HVAC valves, mirror fold, and door-lock actuators. With 840 mA ID and a TrenchFET low-RDS(on) die, it dissipates less than 200 mW at 200 mA load on a 1 sq-inch 2-oz copper drain pad. P-Channel topology simplifies high-side drive by eliminating the bootstrap supply needed for N-Channel high-side switches. Place a 100 kohm gate pull-up resistor to the source so the switch defaults OFF when the MCU GPIO is high-impedance during reset, preventing inrush faults.
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Reverse-Polarity Battery Protection
In 12 V/24 V battery protection circuits, the SQ2325ES-T1 acts as a reverse-polarity blocking element placed in series with the load. Its 150 V VDS rating absorbs the full system transient voltage when a reverse-polarity event occurs, while 840 mA ID handles nominal load current up to several amps in pulsed mode. AEC-Q101 and 100% UIS testing validate the device against the inductive kickback generated by motors and solenoids in the protected load chain. Add a TVS diode across drain-source for secondary protection during load-dump transients per ISO 7637-2.
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High-Side GPIO Driver / Level Shifter
The SQ2325ES-T1 is well-suited to level-shift and high-side driver circuits that translate 3.3 V or 5 V MCU GPIO signals to switch 12 V/24 V buses. P-Channel topology enables direct gate drive from a low-voltage logic output through a pull-up resistor, eliminating the charge pump required for N-Channel high-side switches. With VGS(th) in the -1 V to -3 V range and 100% Rg-tested parts, switching behavior is consistent across the production lot. Limit gate-source voltage to within the absolute-maximum rating (typically +/-20 V) by adding a Zener clamp on the gate when driving from voltages above the maximum VGS.
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Hot-Swap Insertion Circuit
In hot-swap insertion circuits, the SQ2325ES-T1 controls inrush current when a daughter-card is inserted into a live 12 V/24 V backplane. P-Channel topology with a gate pull-up resistor ensures the MOSFET defaults OFF during insertion and is then enabled by the host controller after card presence is verified. The 150 V VDS rating covers inrush transients and bus ringing, while the AEC-Q101 qualification validates the device against repeated thermal cycling. Use a soft-start RC network on the gate to limit dV/dt-induced inrush and prevent connector arcing.
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Industrial 24 V Solenoid/Valve Driver
The SQ2325ES-T1's 150 V VDS rating and AEC-Q101 qualification enable driving industrial 24 V solenoids, valves, and small relays from PLC or industrial-controller outputs. The 840 mA ID rating accommodates most pilot-valve coils (typically 100-300 mA), and the TrenchFET die minimizes conduction losses for cooler operation in sealed industrial enclosures. P-Channel topology eliminates the need for a charge pump, simplifying the BOM. For inductive load switching, always include a flyback diode or RC snubber to clamp drain voltage spikes within the 150 V VDS rating.
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Portable / Battery-Powered Power Path Switch
In portable battery-powered devices, the SQ2325ES-T1 can serve as a power-path switch between a Li-ion cell, USB charger, and system load. Its P-Channel topology with low RDS(on) minimizes voltage drop during discharge, extending battery runtime by typically 2-4% versus a Schottky-diode OR-ing scheme. AEC-Q101 qualification provides extra margin for handheld devices that may experience wide temperature swings. Drive the gate from a low-quiescent-current load-switch controller to maintain <1 uA quiescent current in shutdown, critical for long shelf-life and storage-mode products.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SQ2325ES-T1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SQ2309ES-T1_BE3 | SI2333DDS-T1-GE3 | NDT451AN | DMP3098L-7 | AO3401A |
|---|---|---|---|---|---|---|
| Brand | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | onsemi | Diodes Incorporated | Alpha & Omega Semiconductor |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| Transistor Type | P-Channel MOSFET | P-Channel MOSFET | P-Channel MOSFET | P-Channel MOSFET | P-Channel MOSFET | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 60 V | 30 V | 30 V | 30 V | 30 V |
| Technology | TrenchFET | TrenchFET | TrenchFET | Planar | Planar | Trench |
| RoHS / Lead-Free | Yes (GE3) | Yes (BE3) | Yes (GE3) | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Highest VDS rating in SOT-23-3 form factor (vs. SQ2309ES-T1_BE3)
- Automotive-grade qualification with full test coverage (vs. NDT451AN)
- TrenchFET process for lower RDS(on) per area (vs. DMP3098L-7)
Designhinweise
Estimated: The SOT-23-3 thermal pad (Drain, pin 3) is the primary heat-dissipation path. With a 1 sq-inch 2-oz copper drain pad on FR4, theta_JA is approximately 150 C/W. At ID = 500 mA and RDS(on) = 0.5 ohm, power dissipation is approximately 125 mW, yielding a junction temperature rise of approximately 19 C above ambient. For continuous operation above 500 mA in still air, recommend a minimum 1 sq-inch 2-oz copper pour on the drain pad.
The SOT-23-3 footprint follows JEDEC TO-236 standards. Place a 100 kohm gate pull-up resistor between Gate and Source so the MOSFET defaults OFF when the controller GPIO is high-impedance (reset or unprogrammed). Add a 10 kohm series gate resistor to limit dV/dt-induced ringing and reduce EMI. Keep the gate-trace short and away from drain switching-node copper to minimize parasitic coupling.
Do not exceed the absolute-maximum VGS rating (typically +/-20 V for TrenchFET P-Channel). Add a Zener diode clamp from Gate to Source when driving from a logic-level voltage above the maximum VGS. For inductive load switching (solenoids, relays, motors), always include a flyback diode or RC snubber across the load to clamp drain voltage spikes within the 150 V VDS rating. Exceeding VDS during turn-off can permanently damage the device even within the SOA boundaries.
Compliance-Informationen
AEC-Q101 qualified (MOSFET equivalent of AEC-Q100). GE3 suffix denotes Pb-free and RoHS-compliant terminal finish. 100% Rg and UIS tested per Vishay product page.
