STB24N60M2 - 600V 18A MDmesh M2 N-Channel MOSFET | STMicroelectronics
Teilenummer: STB24N60M2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.95 | $3,95 |
| 10 | $3.42 | $34,20 |
| 100 | $2.78 | $278,00 |
| 500 | $2.35 | $1.175,00 |
| 1.000 | $1.99 | $1.990,00 |
STB24N60M2 Übersicht
A power MOSFET is a voltage-controlled majority-carrier switch whose drain-source channel conducts when a positive gate-source voltage is applied. The MDmesh M2 process is a refined high-voltage planar stripe layout that lowers RDS(on) per unit area and shrinks internal capacitances, placing the part in the broader hierarchy MOSFET -> discrete semiconductor -> power transistor. Compared with older MDmesh generations, M2 reduces gate charge and Eoss losses, which directly improves light-load efficiency in resonant and hard-switched topologies.
Key features include a 600 V drain-source breakdown rating, a typical RDS(on) of 168 mΩ (≈190 mΩ max) at VGS=10 V, a continuous drain current of 18 A at TC=25 °C, and an avalanche-rated 150 W power dissipation. The device is fully rated for avalanche operation, carries an operating junction range of -55 °C to +150 °C, and provides an intrinsic source-body diode suitable for bridge and synchronous-rectification roles. The D2PAK footprint exposes a large metal pad for top-side PCB copper heatsinking, allowing the part to dissipate rated power with modest board copper area.
Typical applications include switched-mode power supplies (SMPS), power factor correction (PFC) boost stages, solar inverters, welding equipment, and high-voltage LED drivers. The MDmesh M2 cell is favored in designs where high efficiency at full load, robust avalanche energy, and a compact SMD footprint outweigh the need for the absolute lowest RDS(on) of larger TO-247 parts.
When designing with this device, respect the SOA boundaries published in the datasheet, keep the gate-drive loop compact to limit switching loss, and provide adequate copper heatsinking on the D2PAK tab. Compared with cross-brand 600 V CoolMOS or SuperFET competitors, the STB24N60M2 typically trades a slightly higher RDS(on) for stronger avalanche ruggedness and easier second-source availability. This page consolidates verified distributor pricing, drop-in alternative cross-references, and practical design notes not available on any single distributor product page.
Drop-in-Alternativen für STB24N60M2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STB21N65M2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STB26N60M2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STB28N60M2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STB24N60M2 Grenzwerte & elektrische Eigenschaften
| Manufacturer | STMicroelectronics |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MDmesh M2 (high-voltage planar strip) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A |
| On-Resistance RDS(on) typ. at VGS=10V | 168 mΩ |
| Gate-Source Voltage (VGS) max | ±25 V |
| Power Dissipation (PD) at TC=25°C | 150 W |
| Avalanche Energy (EAS) rated | Yes (per datasheet) |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C |
| Gehäuse | TO-263 / D2PAK (surface mount, 3 pins + tab) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Datasheet Document | STMicroelectronics STB24N60M2 datasheet (22 pages) |
STB24N60M2 Pin-Konfiguration
| Pin 1 | Gate (G) — Gate control input |
| Pin 2 | Drain (D) — Drain terminal, also connected to the metal tab |
| Pin 3 | Source (S) — Source terminal |
| Pin Tab | Drain (D) — Metal tab / drain thermal pad, solder to PCB copper pour |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
STB24N60M2 ist geeignet für 6 Anwendungs: Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, Solar Inverters and PV Converters, Industrial Welding and Plasma Equipment, High-Voltage LED Drivers, Telecom and Server Power Supplies.
Switched-Mode Power Supplies (SMPS)
The STB24N60M2 fits 90–264 VAC SMPS primary-side switches because its 600 V VDS comfortably exceeds the 400 V rectified bus of universal-input designs, and its 168 mΩ RDS(on) limits conduction loss to roughly 1.5 W at 9 A average primary current. MDmesh M2's low Qg shortens the Miller plateau and cuts switching loss at 65–100 kHz hard-switched topologies. Place the device with a tight gate-drive loop and ≥6 cm² of 1 oz copper on the D2PAK tab to stay within the 150 W power rating.
Empfohlen
Power Factor Correction (PFC) Boost Stages
In CCM PFC boost converters running off a 400 V bus, the STB24N60M2's 600 V rating and 18 A continuous current support up to ~3 kW designs at 70 kHz. MDmesh M2's avalanche-rated body diode handles the boost-inductor reverse-recovery event without an external SiC diode for lower-power stages. The D2PAK footprint permits automated SMD assembly while still allowing the copper pour to act as a heatsink for the ~5 W typical dissipation.
Empfohlen
Solar Inverters and PV Converters
Solar string inverters operate from 200–600 VDC open-circuit PV inputs, exactly the voltage window where the STB24N60M2 delivers optimal efficiency. Its 168 mΩ RDS(on) keeps full-load conduction loss manageable in non-isolated HERIC or H-bridge inverter topologies, while the -55 °C to +150 °C junction range covers outdoor cabinet thermal extremes. Use the D2PAK version in inverter modules where surface-mount assembly reduces parasitic switching-loop inductance versus through-hole equivalents.
Empfohlen
Industrial Welding and Plasma Equipment
Welding inverter front-ends demand 600 V switches with high avalanche ruggedness to absorb the energy reflected from the welding transformer. The STB24N60M2's rated EAS and 18 A continuous current make it suitable for compact 200–300 A stick/TIG welding inverter primary switches operating at 20–50 kHz. MDmesh M2's strip layout is engineered for the high dv/dt and di/dt stresses typical of full-bridge welding converters.
Empfohlen
High-Voltage LED Drivers
High-bay industrial LED drivers running off 230 VAC rectified to ~325 VDC need 600 V-rated switches. The STB24N60M2's MDmesh M2 cell provides low RDS(on) and clean switching at the 50–100 kHz frequencies typical of LLC and flyback LED topologies. The D2PAK package's exposed pad simplifies thermal management in IP65-rated luminaires where ambient temperatures can reach 70 °C.
Empfohlen
Telecom and Server Power Supplies
48 V telecom-bus front-end converters and 12 V server silver-box supplies require high-efficiency 600 V primary switches. The STB24N60M2's 168 mΩ RDS(on) keeps full-load efficiency above 92 % in 1–2 kW server PSU designs using an interleaved PFC + LLC topology. MDmesh M2's low gate charge reduces drive-stage losses, and the device's proven reliability in high-volume telecom deployments simplifies agency-qualification (UL, IEC) cycles.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STB24N60M2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STB21N65M2 | STB26N60M2 | STB28N60M2 | STP24N60M2 | IPA60R190P6 |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) - SMD | D2PAK (TO-263) - SMD | D2PAK (TO-263) - SMD | D2PAK (TO-263) - SMD | TO-220 - through-hole | TO-263 (D2PAK) - SMD |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon |
| Drain-Source Voltage VDS (V) | 600 | 650 | 600 | 600 | 600 | 600 |
| Continuous Drain Current ID @ TC=25°C (A) | 18 | 17 | 20 | 22 | 18 | 20 |
| On-Resistance RDS(on) typ. at VGS=10V (mΩ) | 168 | 190 | 125 | 115 | 168 | 190 |
| Power Dissipation PD @ TC=25°C (W) | 150 | 150 | 170 | 190 | 150 | 151 |
| Technology Family | MDmesh M2 | MDmesh M2 | MDmesh M2 | MDmesh M2 | MDmesh M2 | CoolMOS P6 |
| Mounting Type | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Through-Hole (TO-220) | Surface Mount (D2PAK) |
Wichtigste Unterscheidungsmerkmale
- D2PAK (TO-263) SMD assembly with strong MDmesh M2 ruggedness (vs. STP24N60M2 (TO-220))
- Balanced RDS(on) vs current capability (vs. STB28N60M2 (22 A, 115 mΩ))
- Better second-source availability than Infineon CoolMOS equivalents (vs. Infineon IPA60R190P6)
Designhinweise
Estimated: at PD=5 W continuous dissipation with TC=100 °C and 1 oz copper pad of 6 cm² on the D2PAK tab, the junction temperature rise is roughly 50 °C, giving TJ≈150 °C - right at the rated limit. Use ≥10 cm² of 2 oz copper, or attach a clip-on heatsink, to gain thermal margin. The datasheet thermal-resistance curve should be consulted for the exact θJA figure used.
Keep the high-current drain loop (bus capacitor → MOSFET drain → tab copper → return) as small as physically possible. A 20 nH parasitic loop at 10 A switching in 50 ns produces 4 V overshoot, easily exceeding the 600 V rating. Place the bulk capacitor on the same copper layer as the MOSFET drain and use multiple parallel vias to inner copper planes.
Gate-drive traces should be 0.5 mm wide minimum and kept under 20 mm long. Add a 10 Ω gate resistor close to the gate pin to dampen the LC resonance formed by the gate-source capacitance and trace inductance. The gate-driver VCC bypass (≥1 µF ceramic) must be located within 5 mm of the driver's VCC pin.
Do not exceed VGS=±25 V. If the gate driver can produce overshoot above this (e.g., during Miller plateau), add a 12 V Zener clamp from gate to source. Do not rely on the intrinsic body diode for continuous synchronous-rectifier service in 600 V half-bridge topologies - use a SiC co-pack diode for high-frequency operation.
Compliance-Informationen
RoHS and lead-free per STMicroelectronics product page; AEC-Q100 not applicable for a discrete power MOSFET marketed for industrial/commercial power conversion.
