STW26N60M2 - 600V 26A N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STW26N60M2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $3.08 | $30,80 |
| 100 | $2.74 | $274,00 |
| 500 | $2.46 | $1.230,00 |
| 1.000 | $2.19 | $2.190,00 |
STW26N60M2 Übersicht
A Power MOSFET is a type of field-effect transistor specifically designed to handle high voltages and currents in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are essential components in power management systems, where they function as switches in DC-DC converters, motor drives, and power supplies, enabling efficient energy conversion and regulation.
Key features of the STW26N60M2 include a low on-resistance (RDS(on)) of typically 0.125 ohm at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a fast switching performance with a total gate charge (Qg) of 78 nC, reducing switching losses in high-frequency applications. Additionally, it has a wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments. The TO-247 package provides a low thermal resistance of 0.5°C/W (junction-to-case), enabling efficient heat dissipation.
The STW26N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve a good trade-off between on-resistance and switching performance. This technology enhances the device's robustness against avalanche breakdown and improves its body diode characteristics, making it suitable for bridge topologies and inductive load switching. The device also features a built-in gate-source ESD protection, enhancing its durability during handling and operation.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor control, and uninterruptible power supplies (UPS). In these applications, the STW26N60M2 provides efficient switching and low conduction losses, contributing to higher system efficiency and reduced heat generation. Its high voltage rating and current capability make it ideal for 400V and 600V bus systems commonly found in industrial and telecom power supplies.
When designing with this device, ensure proper gate driving to minimize switching losses and avoid parasitic turn-on. A gate resistor in the range of 10-100 ohm is recommended to control the switching speed and reduce EMI. Additionally, adequate heat sinking is required to maintain the junction temperature within safe limits, especially when operating at high currents and ambient temperatures.
Drop-in-Alternativen für STW26N60M2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STW26N60M2-1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
STW26N60M2-EP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPW60R045CP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FCH26N60N
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STW26N60M2 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 26 A |
| Continuous Drain Current (ID) at 100°C | 16 A |
| Pulsed Drain Current (IDM) | 104 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) at VGS=10V | 0.125 ohm (typical) |
| Total Gate Charge (Qg) | 78 nC |
| Input Capacitance (Ciss) | 2400 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 10 pF |
| Power Dissipation (PD) at 25°C | 250 W |
| Betriebstemperaturbereich | -55°C to +150°C |
| Gehäuse | TO-247 |
| Montageart | Through Hole |
| RoHS-Status | Compliant |
STW26N60M2 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the heat sink tab |
| Pin 3 | Source — Source terminal |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
STW26N60M2 ist geeignet für 6 Anwendungs: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Motor Control, Uninterruptible Power Supplies (UPS), Solar Inverters, Electric Vehicle Charging Stations.
Switch-Mode Power Supplies (SMPS)
The STW26N60M2 is ideal for SMPS due to its high voltage rating (600V) and low on-resistance (0.125 ohm), which minimize conduction losses. In a typical flyback or forward converter, the MOSFET switches at frequencies up to 100 kHz, and its fast switching speed (Qg=78 nC) reduces switching losses. The TO-247 package allows efficient heat dissipation, enabling continuous operation at high power levels. Compared to lower-voltage MOSFETs, the 600V rating provides ample margin for voltage spikes in offline applications. Designers should ensure proper gate drive and snubber circuits to manage ringing and EMI.
Empfohlen
Power Factor Correction (PFC)
In PFC circuits, the STW26N60M2 operates as a boost switch in continuous conduction mode (CCM) or critical conduction mode (CrM). Its low RDS(on) reduces conduction losses, while the fast body diode recovery (trr=280 ns) minimizes reverse recovery losses in the boost diode. The device's high voltage rating (600V) handles the boosted output voltage (typically 400V) with margin. The gate charge of 78 nC allows efficient driving at switching frequencies up to 200 kHz. For CrM operation, the low output capacitance (Coss=120 pF) reduces capacitive turn-on losses. Proper layout and gate drive are essential to minimize EMI.
Empfohlen
Motor Control
The STW26N60M2 is suitable for motor control applications such as variable frequency drives (VFDs) and servo drives. In a three-phase inverter, the MOSFETs switch at frequencies up to 20 kHz, and the low on-resistance minimizes conduction losses, improving overall efficiency. The device's avalanche energy rating (1.2 J) ensures robustness against inductive load transients. The TO-247 package allows easy mounting on heatsinks, which is critical for dissipating heat generated during continuous operation. For high-power motors, multiple devices can be paralleled to increase current capability. Gate drive circuits should provide sufficient peak current to charge the gate capacitance quickly.
Empfohlen
Uninterruptible Power Supplies (UPS)
In UPS systems, the STW26N60M2 is used in the inverter stage to convert DC to AC. Its high voltage rating (600V) is suitable for 400V DC bus systems, and the low on-resistance reduces losses, improving battery life. The device's fast switching speed enables high-frequency PWM, reducing the size of output filters. The TO-247 package provides good thermal performance, essential for continuous operation in UPS applications. The body diode's fast recovery time is beneficial for the freewheeling current in the inverter bridge. Designers should ensure proper heat sinking and gate drive to maintain reliability.
Empfohlen
Solar Inverters
The STW26N60M2 is well-suited for solar inverters, where it is used in DC-DC boost converters and DC-AC inverters. Its high voltage rating (600V) handles the high input voltage from solar panels, and the low on-resistance minimizes losses, maximizing energy harvest. The device's fast switching speed allows high-frequency operation, reducing the size of magnetic components. The TO-247 package ensures efficient heat dissipation, which is critical in outdoor installations. The avalanche robustness protects against voltage spikes caused by lightning or switching transients. Proper gate drive and protection circuits are essential for reliable operation.
Empfohlen
Electric Vehicle Charging Stations
In EV charging stations, the STW26N60M2 is used in the power conversion stages, such as PFC and DC-DC converters. Its high voltage rating (600V) is suitable for 400V battery systems, and the low on-resistance reduces losses, improving charging efficiency. The device's fast switching speed enables high-frequency operation, reducing the size of transformers and inductors. The TO-247 package provides excellent thermal performance, essential for high-power charging applications. The avalanche energy rating ensures robustness against transients. Designers should implement proper thermal management and gate drive to ensure long-term reliability.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STW26N60M2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STW26N60M2-1 | STW26N60M2-EP | IPW60R045CP | FCH26N60N |
|---|---|---|---|---|---|
| Package | TO-247 | TO-247 | TO-247 | TO-247 | TO-247 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 26 A | 26 A | 26 A | 37 A | 26 A |
| On-Resistance (RDS(on)) | 0.125 ohm | 0.125 ohm | 0.125 ohm | 0.045 ohm | 0.11 ohm |
| Total Gate Charge (Qg) | 78 nC | 78 nC | 78 nC | 63 nC | 85 nC |
| Power Dissipation (PD) at 25°C | 250 W | 250 W | 250 W | 446 W | 250 W |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Wichtigste Unterscheidungsmerkmale
- Low on-resistance of 0.125 ohm (vs. FCH26N60N)
- Fast body diode recovery time of 280 ns (vs. IPW60R045CP)
- Avalanche energy rating of 1.2 J (vs. FCH26N60N)
Designhinweise
The STW26N60M2 has a junction-to-case thermal resistance of 0.5°C/W. At 250W power dissipation, the junction temperature rise is 125°C above case temperature. Ensure adequate heat sinking to keep the junction temperature below 150°C. Use a thermal pad or grease between the TO-247 tab and heatsink to minimize thermal resistance. For high-power applications, consider forced air cooling or liquid cooling.
For the TO-247 package, the drain tab is electrically connected to the drain terminal. Ensure proper isolation if the heatsink is grounded. Place gate drive components close to the gate pin to minimize parasitic inductance. Use a gate resistor (10-100 ohm) to control switching speed and reduce EMI. Keep the source connection short and direct to the gate driver return to avoid common-source inductance.
Avoid operating the device beyond the maximum VDS of 600V, as this can cause avalanche breakdown and damage. Ensure the gate-source voltage does not exceed ±25V. When switching inductive loads, use a snubber circuit or freewheeling diode to prevent voltage spikes. Verify that the body diode's reverse recovery time (280 ns) is acceptable for your application; if not, consider using a faster diode in parallel.
Compliance-Informationen
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive use, consider STW26N60M2-EP or other automotive-grade parts.
