VND7NV04TR-E - 45V 6A OMNIFET II Auto-Protected MOSFET | STMicroelectronics
Teilenummer: VND7NV04TR-E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.65 | $1,65 |
| 10 | $1.42 | $14,20 |
| 100 | $1.1 | $110,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.81 | $810,00 |
| 2.500 | $0.72 | $1.800,00 |
VND7NV04TR-E Übersicht
A high-side switch (also known as a smart power switch or fully-protected MOSFET) is a discrete power semiconductor that integrates the power MOSFET die with on-chip protection, diagnostic, and gate-drive circuitry into a single package. The OMNIFET II family belongs to ST's VIPower M0-3 technology platform, which combines vertical DMOS power structures with bipolar/mixed-signal control blocks. Compared to a discrete N-channel MOSFET that requires external protection, an OMNIFET II part reduces BOM count, PCB area, and design complexity while improving reliability in harsh electrical environments.
Key parametric features include 45V Vdss maximum rating, 6A continuous output current, 60 mOhm typical Rds(on) at 25C, an input pin that draws minimal drive current, and a diagnostic feedback path that reports fault status by sensing voltage at the input pin. Built-in protections cover short-circuit current limiting, over-temperature shutdown, and over-voltage avalanche clamping. The DPAK package offers a low thermal resistance of approximately 50 C/W junction-to-ambient on a standard JEDEC 1 sq-in copper pad.
Architecturally, the VND7NV04TR-E uses ST's VIPower M0-3 vertical DMOS cell array with monolithic bipolar analog control for protection and diagnostics. The fault feedback pin allows a microcontroller to detect open-load, short-to-ground, and over-temperature conditions without additional external sense circuitry. Operating switching capability extends from DC up to 50 kHz, covering most relay-replacement and load-driving tasks.
Typical applications include automotive body modules (lamp drivers, solenoid and relay replacement), industrial PLC output stages, 12V/24V DC load switching, and any solid-state relay (SSR) function where a logic-level input must switch a high-current inductive or resistive load with integrated fault diagnostics.
When designing with the VND7NV04TR-E, ensure the input pin receives proper logic-level drive, place the device on a copper pad sized for worst-case power dissipation (P = I^2 * Rds(on)), and add a TVS diode or freewheeling path if driving motors where back-EMF exceeds the avalanche rating.
This page synthesizes distributor pricing, drop-in OMNIFET II alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für VND7NV04TR-E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
VND7NV04-E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VND7NV04-1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VND5N0713TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VND7N0413TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VND7NV04TR-E Grenzwerte & elektrische Eigenschaften
| Manufacturer | STMicroelectronics |
| Product Family | OMNIFET II (VIPower M0-3) |
| FET Type | N-Channel |
| Drain-to-Source Voltage (Vdss) | 45 V |
| Continuous Drain Current (Id) | 6 A |
| On-Resistance Rds(on) (Typ) | 60 mOhm |
| Input Type | Non-Inverting (logic-level compatible) |
| Ausgangskonfiguration | High-side, 1:1 switch |
| Fault Protection | Current Limiting (Fixed), Over-Temperature, Over-Voltage Clamp |
| Diagnostic Feedback | Yes (voltage sense at input pin) |
| Schaltfrequenz | DC to 50 kHz |
| Betriebstemperaturbereich | -40C to +150C (junction) |
| Gehäuse | TO-252 (DPAK), 3-pin surface mount |
| Montageart | Surface Mount |
| Technology | VIPower M0-3 (vertical DMOS + monolithic control) |
| RoHS-Status | Compliant (TR-E suffix indicates lead-free tape & reel) |
| MSL-Level | 3 (per IPC/JEDEC J-STD-020) |
VND7NV04TR-E Pin-Konfiguration
| Pin 1 | IN — Logic-level input (gate drive) and diagnostic feedback node |
| Pin 2 | OUT / Source — Switched output to load (also internally tied to mounting tab) |
| Pin 3 | Drain / VIN — Connected to battery / supply rail (load-side high-side switch input) |
Sicherer Arbeitsbereich (DPAK on 1 sq-in pad)
Typische Anwendungen
VND7NV04TR-E ist geeignet für 6 Anwendungs: Automotive Lamp Driver (12V / 24V), Solid-State Relay (SSR) Replacement, Solenoid and Valve Driver, DC Motor Direction Control (Half-Bridge / High-Side), Battery-Management Load Disconnect, HVAC Blower and Fan Speed Switch.
Automotive Lamp Driver (12V / 24V)
The VND7NV04TR-E suits automotive front and rear lamp driver modules because its 45V Vdss and integrated over-voltage clamp easily absorb 12V/24V load-dump pulses defined by ISO 7637-2 transient profiles. The 6A continuous drain current drives headlamp bulbs, fog lamps, and turn-indicator LED strings directly, while the 60 mOhm Rds(on) keeps conduction loss near 2W at full load, manageable on the DPAK 1 sq-in copper pad. On-chip thermal shutdown engages if the junction approaches 150C, protecting against the high ambient temperatures seen in engine-bay wiring. The diagnostic feedback through the input pin enables body-control modules to detect open filaments or shorted wiring without adding external current-sense amplifiers, a major BOM saving versus discrete MOSFET solutions.
Empfohlen
Solid-State Relay (SSR) Replacement
Replacing electromechanical relays with the VND7NV04TR-E yields a longer-life, faster-switching, and lower-power alternative in industrial control panels. The OMNIFET II switching bandwidth of DC to 50 kHz is far above mechanical relay response, enabling PWM-style load cycling for heater control or solenoid multiplexing. Built-in linear current limiting removes the need for external fuses on most resistive and inductive loads. The DPAK footprint is pin-compatible with many TO-220 footprint adapters, allowing drop-in upgrade of legacy SSR modules. Logic-level input drive directly interfaces with 3.3V or 5V MCU GPIO without gate-driver stages, simplifying the BOM and improving reliability in vibration-prone industrial installations.
Empfohlen
Solenoid and Valve Driver
Hydraulic and pneumatic solenoid valves in 24V industrial systems benefit from the VND7NV04TR-E's integrated avalanche clamp, which absorbs the inductive kickback generated when the solenoid de-energizes. The 6A continuous rating covers most proportional valves and small directional control solenoids, while the thermal protection prevents coil-winding faults from destroying the switch. Diagnostic feedback allows predictive maintenance by detecting valve stuck-open or stuck-closed conditions. The DPAK package sits on the same heatsink extrusion as the rest of the driver board, keeping thermal management centralized and simplifying the mechanical enclosure.
Empfohlen
DC Motor Direction Control (Half-Bridge / High-Side)
In brushed DC motor driver circuits the VND7NV04TR-E serves as the high-side switch, paired with a low-side counterpart to form a half-bridge reversible drive. The 45V Vdss and 6A Id comfortably drive sub-100W motors in robotics, small appliances, and HVAC damper actuators. The on-chip current limit acts as a rudimentary stall protection, preventing catastrophic motor damage if the rotor locks. Switching at up to 50 kHz allows PWM speed control with low acoustic noise. DPAK packages enable compact H-bridge layouts where four OMNIFET II parts replace a bulky discrete MOSFET plus gate-driver solution.
Empfohlen
Battery-Management Load Disconnect
In battery-management systems (BMS) the VND7NV04TR-E acts as a solid-state load disconnect switch that protects lithium-ion packs from over-discharge and short-circuit conditions. The 6A continuous rating suits portable equipment, e-bike battery packs, and small UPS modules. On-chip current limiting clamps short-circuit events during cable faults, while thermal shutdown engages if the disconnect switch must dissipate extended overcurrent energy. The diagnostic pin allows the BMS controller to differentiate between a true overcurrent and a transient inrush, preventing nuisance disconnects on capacitive loads at plug-in.
Empfohlen
HVAC Blower and Fan Speed Switch
Automotive and industrial HVAC blower motors benefit from the VND7NV04TR-E's PWM-capable switching and integrated thermal management. The OMNIFET II handles continuous blower loads up to 6A while absorbing commutation transients from the motor's inductive windings. Variable-speed control via duty-cycle modulation eliminates bulky mechanical resistor networks and improves efficiency. The DPAK package's low thermal resistance keeps the junction cool even at sustained 100% duty cycle in high-back-pressure conditions, and the diagnostic feedback enables the HVAC controller to detect a stalled blower or seized bearing before catastrophic failure occurs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für VND7NV04TR-E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | VND7NV04-E | VND7NV04-1 | VND5N0713TR | VND7N0413TR |
|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package | TO-252 (DPAK) | TO-252 (DPAK) | TO-252 (DPAK) | TO-252 (DPAK) | TO-252 (DPAK) |
| Drain-to-Source Voltage (Vdss) | 45 V | 45 V | 45 V | 50 V | 40 V |
| Continuous Drain Current | 6 A | 6 A | 6 A | 5 A | 13 A peak / 6 A continuous |
| Built-in Thermal Shutdown | Yes | Yes | Yes | Yes | Yes |
| Over-Voltage Clamp | Yes | Yes | Yes | Yes | Yes |
| Packaging Format | Tape & Reel (TR-E suffix) | Tube (E suffix) | Bulk/Tape (-1 suffix) | Tape & Reel | Tape & Reel |
Wichtigste Unterscheidungsmerkmale
- Highest continuous drain current in DPAK OMNIFET II family at 45V class (vs. VND5N0713TR)
- Higher Vdss rating than VND7N0413TR with identical current class (vs. VND7N0413TR)
- Tape-and-reel packaging for high-volume SMT assembly (vs. VND7NV04-E)
Designhinweise
At 6A continuous load the conduction loss is approximately P = I^2 * Rds(on) = 36 * 0.060 = 2.16W. The DPAK junction-to-ambient thermal resistance of about 50 C/W on a JEDEC 1 sq-in copper pad limits steady-state operation to about 1.8A continuous in still air; higher currents require forced airflow or expanded copper area (2-3 sq-in reduces theta_JA below 30 C/W). Place the device's metal tab on the same copper pour that carries the load current to maximize heat spreading.
Do not drive the input pin with voltages exceeding the ESD clamp (typically 8V); a 5V MCU is within spec but 12V or 24V logic will destroy the gate structure. Also, when switching inductive loads, ensure the over-voltage avalanche clamp energy rating is respected - repetitive avalanche at full 6A will exceed the silicon thermal budget within milliseconds. Add an external TVS or freewheeling diode if the load's stored energy (1/2 * L * I^2) exceeds the OMNIFET II internal clamp capability.
Route the high-current drain trace (Pin 3) directly into the load with the widest practical trace width - 2 oz copper at 100 mil width handles 6A with under 30C rise. Keep the input trace short and away from switching node dV/dt to prevent false triggering of the diagnostic feedback. The DPAK tab is internally tied to Pin 2 (source/output), so the PCB copper pour serves double-duty as both thermal relief and current return path.
Compliance-Informationen
RoHS compliant per ST product page (TR-E suffix denotes lead-free). AEC-Q100 qualified for automotive applications per STMicroelectronics OMNIFET II datasheet family designation. Halogen-free status not stated in verified data.
