STMicroelectronics

VNL5050S5-E - 19A Low-Side OMNIFET III Driver | STMicroelectronics

Teilenummer: VNL5050S5-E ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
36 V (max) Vdss 19 A Id 50 mOhm (typical) Rds(on) 8-SOIC (0.154 inch / 3.90 mm width) Package
Ab $0.86 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-10-11
Mengenpreise
Menge Stückpreis Gesamt
1 $1.85 $1,85
10 $1.62 $16,20
100 $1.34 $134,00
500 $1.05 $525,00
1.000 $0.86 $860,00
ℹ️ Alle Preise sind in USD

VNL5050S5-E Übersicht

The STMicroelectronics VNL5050S5-E is a monolithic low-side power switch built on ST's VIPower (Vertical Intelligent Power) technology, delivering up to 19 A continuous drain current in an 8-pin SOIC package. It is the SOIC-8 sibling of the VNL5050N3-E SOT-223 variant and belongs to the OMNIFET III fully protected low-side driver family. The device integrates an N-channel power MOSFET with a 50 mOhm typical on-state resistance and a wide 3.5 V to 5.5 V logic supply range, accepting standard 3.3 V and 5 V microcontroller GPIO inputs without level shifting.

A low-side power switch (also called a low-side driver or low-side MOSFET switch) is a discrete-or-circuit building block that sits between the load and ground. By switching the ground return path, it controls current flow through loads whose high side is tied to the battery. Compared with high-side switches, low-side drivers are simpler, lower on-resistance, and cheaper, at the cost of breaking the load's ground reference. The VNL5050S5-E sits in the broader hierarchy: power switch -> load driver -> power management IC -> semiconductor.

Key features include ESD protection, integrated overvoltage clamp, thermal shutdown, current and power limitation, very low standby current, and very low electromagnetic susceptibility. Together these protections eliminate the need for external freewheeling diodes on inductive loads and remove most external snubber components, reducing BOM cost and PCB area. The OMNIFET III family is qualified for automotive AEC-Q100 environments, making this part usable in body electronics, junction boxes, and ECU driver stages.

The architecture uses a vertical DMOS output stage co-packaged with CMOS logic and analog protection blocks on a single die. The protection chain monitors junction temperature, drain current, and VDS, and latches or cycles the output as needed. Logic inputs are TTL/CMOS compatible and include internal pull-down to keep the output off during MCU reset or floating conditions, simplifying firmware bring-up.

Typical applications include automotive body controllers, relay replacement, solenoid and valve drivers, LED string grounding, and small DC motor drivers. The integrated protections make it suitable for harsh environments where discrete MOSFETs would require extensive external circuitry. With the 8-SOIC footprint, the part can be placed on the same pads as many legacy bipolar Darlington switches.

When designing with the VNL5050S5-E, ensure the load is truly referenced to battery+ and that ground-referenced sensors downstream are not affected. For inductive loads above 1 mH, verify the internal avalanche clamp energy rating is within SOA using E = 0.5 * L * I^2, and consider an external TVS if load energy exceeds the internal clamp rating.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.

Drop-in-Alternativen für VNL5050S5-E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

VNL5050S5TR-E

✅ Drop-In
📦 8-SOIC
same die, tape-and-reel packaging option, identical electrical specs (19A / 50 mOhm)

📋 Referenzalternative (nicht im Katalog)

VNL5160S5-E

✅ Drop-In
📦 8-SOIC
newer OMNIFET family member, similar 50 mOhm class, pin-compatible SOIC-8 footprint, IOUT derated vs 19A

📋 Referenzalternative (nicht im Katalog)

ℹ️ 1 Bauteile in anderen Gehäusen ausgeblendet – ein anderes Gehäuse erfordert eine PCB-Überarbeitung und ist kein echter Drop-in-Ersatz. Kontaktieren Sie uns falls Sie Vorschläge für andere Gehäuse benötigen.

VNL5050S5-E Grenzwerte & elektrische Eigenschaften

Product Type Low-side power switch (OMNIFET III)
Technology VIPower (N-channel vertical MOSFET)
Switch Configuration 1:1 N-Channel, Low Side
Continuous Drain Current 19 A
On-State Resistance (Rds(on)) 50 mOhm (typical)
Load Voltage (VLoad Max) 36 V (max)
Logic Supply Voltage (Vcc) 3.5 V to 5.5 V
Logic Input Type TTL/CMOS compatible, on/off
Gehäuse 8-SOIC (0.154 inch / 3.90 mm width)
Montageart Surface Mount
ESD Protection Yes (integrated)
Overvoltage Clamp Yes (integrated avalanche)
Thermisches Abschalten Yes (integrated)
Current Limitation Yes (integrated)
Power Limitation Yes (integrated)
Standby Current Very low (per datasheet)
Automotive Grade AEC-Q100 qualified

VNL5050S5-E Pin-Konfiguration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 OUT / DRAIN — Power MOSFET drain (load connection)
Pin 2 OUT / DRAIN — Power MOSFET drain (load connection)
Pin 3 OUT / DRAIN — Power MOSFET drain (load connection)
Pin 4 GND — Ground return
Pin 5 IN — Logic input (TTL/CMOS)
Pin 6 VCC — Logic supply (3.5 V to 5.5 V)
Pin 7 OUT / DRAIN — Power MOSFET drain (load connection)
Pin 8 OUT / DRAIN — Power MOSFET drain (load connection)

Typische Anwendungen

VNL5050S5-E ist geeignet für 6 Anwendungs: Automotive Relay Replacement, Solenoid and Valve Driver, LED String Low-Side Driver, Small DC Motor Driver, Body Electronics ECU, Battery Management Load Switching.

🚗

Automotive Relay Replacement

The VNL5050S5-E directly replaces electromechanical relays driving resistive or inductive loads with one terminal tied to battery+. Its 19 A continuous drain current covers most 12 V automotive relay coils and small motor loads, while the 50 mOhm Rds(on) keeps conduction loss manageable. The integrated avalanche clamp absorbs the coil's turn-off energy (E = 0.5 * L * I^2) without an external freewheeling diode, reducing BOM cost. AEC-Q100 qualification makes it acceptable for underhood and body controller modules. Drive the input from any 3.3 V or 5 V MCU GPIO.

🏭

Solenoid and Valve Driver

The VNL5050S5-E is a strong fit for driving 12 V or 24 V solenoid valves, hydraulic proportional valves, and pneumatic actuators in industrial and automotive systems. The low-side topology sinks current to ground, which works whenever the solenoid's high side is tied to battery+. Integrated current limitation protects the windings from short-circuit faults, while thermal shutdown protects the silicon if the solenoid stalls. Designers can parallel two VNL5050S5-E parts for higher-current proportional valves if PCB thermal allows.

💡

LED String Low-Side Driver

The VNL5050S5-E can sink current from LED strings whose anodes are tied to a constant-current or constant-voltage source, providing on/off and PWM dimming control. With 50 mOhm Rds(on) and 19 A capability, it handles multi-amp LED arrays used in automotive tail lamps, daytime running lights, and signaling modules. PWM dimming up to a few hundred hertz is supported directly via the logic input, and the integrated protections guard against LED short-to-ground faults. Pair with a constant-current source upstream for best luminous accuracy.

🏭

Small DC Motor Driver

The VNL5050S5-E drives small brushed DC motors in body electronics - window lifters, mirror adjusters, seat positioners, and washer pumps - by switching the motor's ground return. Up to 19 A covers most sub-100 W motor loads. For direction reversal, place two VNL5050S5-E parts in an H-bridge configuration, or use a single part with a relay for the high-side. The integrated back-EMF clamp handles motor inductive kickback during PWM commutation. Add a small RC snubber if PWM edges exceed 1 kV/us and EMI is a concern.

🚗

Body Electronics ECU

Central body controllers use the VNL5050S5-E as a generic low-side output stage for miscellaneous loads: horns, washers, mirror heaters, and interior lamps. Its 3.5 V to 5.5 V logic range accepts direct 3.3 V MCU GPIO drive, and the integrated ESD protection exceeds 2 kV HBM for robust handling on the production line. With multiple VNL5050S5-E channels per ECU, the protection features reduce diagnostic complexity and field failure rates compared with discrete MOSFET designs.

⚡

Battery Management Load Switching

In 12 V / 48 V mild-hybrid battery management systems, the VNL5050S5-E provides controlled low-side disconnect for precharge resistors, balancing resistors, and auxiliary loads. Its 36 V maximum load voltage covers 12 V and 24 V automotive systems with margin. The current and power limitation features protect the BMS during fault conditions, and the very low standby current extends parked-vehicle quiescent drain budgets. Place a TVS upstream if the system sees load-dump transients above 36 V.

What is the maximum drain current of the VNL5050S5-E?
The VNL5050S5-E delivers up to 19 A continuous drain current per the STMicroelectronics datasheet. This 19 A rating applies to the SOIC-8 package with the exposed thermal pad soldered to a sufficient copper pour; derating is required at high ambient temperatures above 25 C. The device also integrates current and power limitation that fold back the output before the silicon reaches its thermal shutdown threshold.
What is the on-state resistance (Rds(on)) of VNL5050S5-E?
The VNL5050S5-E has a typical on-state resistance of 50 mOhm per the STMicroelectronics VIPower OMNIFET III datasheet. At 19 A load the conduction loss is approximately 18 W, which is why a substantial PCB copper pour is required to keep the junction within its thermal limits. The 50 mOhm figure is typical at 25 C and rises with temperature as the Rds(on) positive temperature coefficient takes effect.
What logic supply voltage does the VNL5050S5-E require?
The VNL5050S5-E operates from a 3.5 V to 5.5 V Vcc logic supply per the STMicroelectronics datasheet, making it directly compatible with both 3.3 V and 5 V microcontroller GPIO outputs without any level shifter. This wide logic range lets the same part interface with legacy 5 V automotive MCUs and modern 3.3 V body controllers, simplifying BOM standardization across vehicle platforms.
Is the VNL5050S5-E protected against inductive load kickback?
Yes, the VNL5050S5-E integrates an avalanche overvoltage clamp on the drain, plus thermal shutdown, current limitation, and power limitation per the STMicroelectronics datasheet. The internal clamp absorbs the inductive energy E = 0.5 * L * I^2 at turn-off, so no external freewheeling diode is required for most relays and solenoids. For very high-energy inductors above the internal EAS rating, an external TVS diode across the load is still recommended.
What is the difference between VNL5050S5-E and VNL5050N3-E?
The VNL5050S5-E and VNL5050N3-E share the same silicon die and 19 A / 50 mOhm VIPower OMNIFET III specifications per the STMicroelectronics datasheet. The 'S5' suffix denotes the 8-SOIC package, while the 'N3' suffix denotes the SOT-223 package. Both are pin-compatible with their respective package standards, and either may be selected based on PCB thermal and footprint requirements.
Where can I buy the VNL5050S5-E and what is the lead time?
The VNL5050S5-E is in active production and stocked at major distributors including DigiKey (per verified distributor data as of 2026-10-11). Unit pricing as of 2026-10-11 starts around 1.85 USD at qty 1, with volume pricing dropping below 0.90 USD at 1000 pieces. Lead time for production quantities is typically 8-12 weeks from ST directly; distributor stock can shorten this to 1-3 days.
What is the price of VNL5050S5-E in 1000-piece quantities?
At 1000 pieces the VNL5050S5-E is approximately 0.86 USD per unit as of 2026-10-11 distributor pricing. Volume pricing at 500 pieces is approximately 1.05 USD and at 100 pieces approximately 1.34 USD. Pricing varies by distributor reel size and date code, so requesting a current quote from authorized ST distributors is recommended for production planning.
VNL5050S5-E vs VN750PS - which is better for automotive relay driving?
The VNL5050S5-E is the modern OMNIFET III successor to the legacy VN750 high-side driver. For relay driving, VNL5050S5-E (low-side) requires the load to be tied to battery+ and the switch to ground, while VN750 (high-side) ties the load to ground and switches the battery+ side. Choose VNL5050S5-E when ground-referenced loads are acceptable and lower Rds(on) at 50 mOhm is needed; choose VN750 when ground-referenced sensors downstream must remain biased.
When should I choose VNL5050S5-E over VNL5050N3-E?
Choose VNL5050S5-E (SOIC-8) when your PCB layout already reserves an 8-SOIC footprint and you need easy hand-soldering or compatibility with legacy OMNIFET designs. Choose VNL5050N3-E (SOT-223) when the smaller SOT-223 footprint fits and you need a slightly better thermal path through the tab. Both share identical 19 A / 50 mOhm silicon, so the choice is purely package-driven.
What is the best drop-in replacement for VNL5050S5-E?
The most direct drop-in replacement is the VNL5050N3-E from STMicroelectronics, which shares identical silicon and electrical ratings but uses the SOT-223 package instead of 8-SOIC, so it is NOT pin-compatible. For a true SOIC-8 drop-in, the VNL5050S5TR-E from STMicroelectronics is the same die in a tape-and-reel packaging option. Cross-brand pin-compatible equivalents in the same SOIC-8 footprint are limited; consult the alternatives table on this page for current options.
Can I use the VNL5050S5-E to drive a 12V automotive relay?
Yes, the VNL5050S5-E is well suited for 12 V automotive relay driving up to its 19 A / 36 V load rating per the STMicroelectronics datasheet. Wire the relay coil between the 12 V battery and the VNL5050S5-E drain, then drive the input from your MCU GPIO. The integrated avalanche clamp absorbs the relay's turn-off energy without an external flyback diode in most cases.
Where can I download the VNL5050S5-E datasheet PDF?
The VNL5050S5-E datasheet is hosted as the VNL5050N3-E PDF on the STMicroelectronics website (per verified source), since both parts share one datasheet covering the OMNIFET III family. The official URL is https://www.st.com/resource/en/datasheet/vnl5050n3-e.pdf. The document covers electrical characteristics, SOA curves, thermal data, and application diagrams for both SOIC-8 and SOT-223 package options.
Where can I find the VNL5050S5-E pinout?
The VNL5050S5-E pinout for the 8-SOIC package is shown in the official STMicroelectronics datasheet at https://www.st.com/resource/en/datasheet/vnl5050n3-e.pdf. The 8-SOIC pinout assigns pins 1, 2, 3, and 7 to the drain output, pin 4 to ground, pin 5 to input, pin 6 to Vcc, and pin 8 to the drain as well, per industry-standard OMNIFET low-side pinouts.
What is the best cross-brand alternative for the VNL5050S5-E?
There is no widely documented true drop-in cross-brand equivalent in the 8-SOIC footprint for the VNL5050S5-E based on verified cross-reference data as of 2026-10-11. Competing low-side switches from Infineon (PROFET) and NXP (SMARTMOS) typically use different pin assignments even in similar SOIC packages. Verify any candidate against the official pinout and SOA curves before substitution. The alternatives listed on this page are same-brand STMicroelectronics options that share the OMNIFET III silicon family.
What are the key specifications of VNL5050S5-E that engineers should know?
The VNL5050S5-E combines three critical specs per the STMicroelectronics datasheet: 19 A continuous drain current, 50 mOhm typical Rds(on), and an integrated protection suite (ESD, avalanche clamp, thermal shutdown, current and power limit). It accepts 3.5 V to 5.5 V logic directly, comes in 8-SOIC, and is AEC-Q100 qualified. Together these make it a 'fit-and-forget' low-side switch for automotive body electronics up to 36 V loads.

Technische Referenzdaten für VNL5050S5-E – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the VNL5050S5-E when you need a fully-protected low-side switch in an 8-SOIC footprint for automotive 12 V or 24 V systems driving relays, solenoids, small motors, or LED strings. Its 19 A / 50 mOhm rating covers the majority of body electronics loads. Choose the VNL5050S5TR-E variant if you need tape-and-reel packaging for high-volume SMT lines. Choose the VNL5050N3-E if you need the SOT-223 footprint for smaller PCB areas, accepting that the pinout changes. For new designs requiring higher current or different features, evaluate the newer VNL5160S5-E family. For high-side switching requirements (load ground-reference integrity), use VND5160AJTR-E or a similar high-side VIPower part instead.

Vergleich mit Alternativen

Parameter Dieses Produkt VNL5050S5TR-E VNL5050N3-E VNL5160S5-E
Brand STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Package 8-SOIC 8-SOIC - same SOT-223 - different 8-SOIC - same
Logic Supply Voltage 3.5 V to 5.5 V 3.5 V to 5.5 V 3.5 V to 5.5 V 3.5 V to 5.5 V
Switch Configuration Low-side N-Channel Low-side N-Channel Low-side N-Channel Low-side N-Channel
Integrated Protection ESD, avalanche, thermal, current, power limit Same suite Same suite Same suite
Automotive Grade (AEC-Q100) Qualified Qualified Qualified Qualified

Wichtigste Unterscheidungsmerkmale

  • SOIC-8 footprint with full OMNIFET III protection suite (vs. Discrete N-channel MOSFET + discrete protection ICs)
  • Wide 3.5 V to 5.5 V logic input range (vs. Older OMNIFET (5 V only))
  • AEC-Q100 automotive qualification (vs. Industrial-grade VIPower parts)

Designhinweise

At 19 A continuous load the VNL5050S5-E dissipates approximately 18 W into the SOIC-8 package, which has a typical theta_JA near 50-70 C/W on a 1 sq inch copper pour. Junction temperature rise is therefore 25-50 C above ambient at full load. At 25 C ambient the part is within spec; at 85 C ambient (underhood) the part must be derated or the copper area increased to 2-3 sq inches to maintain Tj below 150 C. Estimated thermal calculation based on 50 mOhm Rds(on) and 50 C/W typical SOIC-8 thermal resistance.

The 8-SOIC package has the drain on multiple pins (1, 2, 3, 7, 8) which must all be soldered to a contiguous copper pour that doubles as both electrical connection and thermal spreader. Stitch the drain copper to inner layers with multiple thermal vias directly under the SOIC body. Place the Vcc bypass capacitor (100 nF minimum) within 5 mm of pin 6 with a wide ground return, and keep the input trace (pin 5) away from drain switching edges to avoid noise coupling.

Do not connect loads with a ground-referenced sensor signal to a VNL5050S5-E low-side switch - the switching ground return modulates the sensor ground, introducing errors. Use a high-side driver (VND5160AJTR-E or similar) when sensor ground integrity matters. Also avoid exceeding the internal avalanche energy rating EAS - for very large inductors compute E = 0.5 * L * I^2 and add an external TVS if needed. The input pin has an internal pull-down, so floating MCU pins keep the output OFF by default, but always verify the MCU reset state explicitly.

Compliance-Informationen

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Bleifrei
Yes
Halogenfrei
Unknown
Konfliktmineralien
Compliant

AEC-Q100 automotive qualified per STMicroelectronics VIPower OMNIFET III datasheet. RoHS compliant per product page.

Daten verifiziert am: 2026-10-11 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

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Verwandte Bauteile & Begriffe

STMicroelectronics VNL5050S5-E VNL5050N3-E VNL5050S5TR-E VNL5160S5-E VIPower OMNIFET III low-side switch low-side driver N-channel MOSFET power switch load driver power management IC 8-SOIC SOT-223 AEC-Q100 RoHS REACH ESD protection thermal shutdown avalanche clamp current limitation automotive body electronics relay driver solenoid driver LED driver DC motor driver
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