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IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
The Infineon IAUC60N04S6L030HATMA1 is an integrated half-bridge power MOSFET array featuring two N-channel OptiMOS 6 transistors in a 5 mm x 6 mm TDSON-8-56 surface-mount package. The device is rated at 40 V VDS, 60 A continuous ID (at TJ), with a typical R_DS(on) of 3.0 mOhm at VGS = 10 V, and maximum power dissipation of 75 W at TC. A MOSFET half-bridge is a building block that integrates a high-side and a low-side N-channel MOSFET in a single package, sharing source/return connections and arranged so the two switches can be driven in a push-pull fashion for synchronous buck/boost conversion, brushed-DC motor drive, or solenoid half-bridge actuation. Within the broader hierarchy, half-bridge arrays sit under power MOSFETs (discrete semiconductors), then switch-mode power transistor stages, then power management ICs and motor-driver topologies - this integration reduces parasitic loop inductance by 60-80 percent versus two discrete TO-220 parts, improving EMI and switching efficiency. Key features include 3.0 mOhm typical on-resistance, 35 nC total gate charge at VGS = 10 V, 2.128 nF output capacitance, 596 pF reverse-transfer capacitance (C_rss), and a 2 V gate-threshold rating that supports logic-level MOSFET driving. The TDSON-8-56 package exposes the drain tab for direct PCB cooling and offers a footprint area of only 30 mm^2, enabling compact motor-control PCB layouts. OptiMOS 6 technology uses a trench MOSFET structure optimized for low R_DS(on) x Qg figure-of-merit, allowing fast switching at 100 kHz to 1 MHz while minimizing conduction and switching losses. The 40 V rating provides comfortable headroom for 12 V and 24 V automotive buses subject to load-dump transients, and the symmetric half-bridge configuration simplifies gate-driver design. Typical applications include 12 V/24 V brushed DC motor drives (window lift, sunroof, seat adjusters, cooling fans), solenoid drivers, half-bridge power stages in DC-DC converters, and relay-replacement circuits. The AEC-Q101 automotive-grade silicon makes it suited to under-hood and chassis body-electronics modules. Designers typically pair it with a gate driver such as the Infineon 2EDL series to obtain proper bootstrap high-side drive and shoot-through protection. When designing with this part, observe maximum junction temperature of 175 C and ensure PCB copper-pour area keeps TJ below 150 C at worst-case load. Always use a low-impedance gate-drive path (1 kOhm or less) and add a small gate-source resistor (10-100 kOhm) to prevent unintended turn-on from dv/dt coupling during switching transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet - in particular the parametric pinning for half-bridge substitution and the cross-brand landscape.
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC60N04S6L039ATMA1 is an N-channel 40 V OptiMOS 6 power MOSFET delivering 60 A continuous drain current at 25 C case temperature, an ultra-low on-resistance of 3.9 milliohm at 10 V VGS, and 42 W power dissipation in a compact 5x6 mm PG-TDSON-8 (SSO8) leadless surface-mount package. The device uses Infineon's latest OptiMOS 6 trench technology optimized for automotive AEC-Q101 environments, combining low figure-of-merit (FOM) switching losses with high inrush current capability (240 A pulsed) and integrated gate-source ESD protection. OptiMOS 6 represents the sixth generation of Infineon's low-voltage power MOSFET platform, a refinement of trench-gate architectures that reduces both conduction and switching losses compared to earlier generations. The technology targets 12 V and 24 V automotive systems where efficiency, thermal behavior, and robustness are simultaneously critical. Within the broader power semiconductor hierarchy, this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> automotive-grade power switch. Compared with classic planar MOSFETs of the same voltage class, OptiMOS 6 delivers roughly 30 percent lower R_DS(on) per unit silicon area, which translates into cooler operation, smaller PCB real estate, and higher system-level power density. Key features include 3.9 milliohm maximum R_DS(on) at V_GS = 10 V, a 60 A continuous drain rating (T_C = 25 C) and a 240 A pulsed drain current limit, low gate charge Q_G in the single-digit nC range for fast switching, and 100 percent avalanche-tested ruggedness. The package is qualified to MSL 1 and JEDEC J-STD-020 reflow profiles, and the die is characterized for an operating junction range of -55 C to +175 C. The leadless PG-TDSON-8 footprint also exposes a large source pad, which functions as the primary thermal path and supports high steady-state current without external heatsinking in well-designed copper pours. Typical applications include 12 V automotive ECU power stages, body and chassis ECUs, reverse-polarity protection ORing switches, hot-swap and battery management disconnects, BLDC motor drives for pumps and fans, and high-current DC-DC converter synchronous rectification stages. The 40 V drain rating provides generous margin above the maximum 24 V automotive load-dump transient. Designers should pay attention to gate-drive voltage headroom: full-rated R_DS(on) is achieved at V_GS = 10 V, so a true 10 V gate-drive rail (or higher) is required for full performance. The exposed pad must be soldered to a sufficiently large copper pour to keep junction-to-ambient thermal resistance within budget. This page consolidates distributor pricing, drop-in alternative equivalents, and practical design notes not found in the manufacturer datasheet alone.
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
The Infineon IAUC60N04S6N031HATMA1 is a 40 V integrated half-bridge N-channel MOSFET array rated for 60 A continuous drain current (Tj) and 75 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-56 (5 mm x 6 mm) package with exposed thermal pad. It features an ultra-low on-state resistance of 3.1 mΩ at VGS = 10 V and AEC-Q101 automotive qualification, making it purpose-built for high-current automotive motor drive and body electronics applications. An integrated half-bridge belongs to the MOSFET array category, where two synchronous N-channel FETs (high-side and low-side) are co-packaged in a single outline. As part of the broader power MOSFET family, half-bridges sit under discrete semiconductors and bridge the gap between single FETs and full three-phase inverter modules, simplifying PCB layout and reducing parasitic inductance in switch-node loops. Key features include 3.1 mΩ R_DS(on) at 10 V VGS, 60 A continuous drain current (Tj-rated), 75 W power dissipation at case temperature, and a 40 V drain-source breakdown voltage optimized for 12 V automotive bus systems. The PG-TDSON-8-56 package provides a low thermal resistance path via the exposed die-attach pad, while the half-bridge topology eliminates the need for an external charge pump on the high-side switch. The device is built on Infineon's OptiMOS 6 40 V technology, which combines trench MOSFET structure with advanced epitaxial design to deliver best-in-class figure-of-merit (FOM = R_DS(on) x Qg). The half-bridge integration reduces gate-drive complexity, minimizes dead-time, and shrinks the switch-node loop area, all critical for high-frequency motor PWM operation up to 25 kHz. Typical applications include automotive brushed DC motor drives, body control modules (BCM), electronic power steering (EPS) auxiliary stages, fuel and water pumps, HVAC blowers, and 12 V solenoid drivers. The AEC-Q101 qualification supports deployment in safety-relevant automotive systems. When designing with this half-bridge, observe the maximum junction temperature of 175 °C and ensure the PCB thermal pad receives at least 6 cm² of 2 oz copper pour. Bootstrap or charge-pump circuitry is required to drive the high-side FET above the bus voltage. Source-perception resistors on both FETs are recommended for current telemetry and short-circuit protection.
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC60N04S6N044ATMA1 is an N-channel 40 V automotive-grade power MOSFET built on Infineon's latest OptiMOS-6 40 V technology, delivering 4.4 mΩ maximum R<sub>DS(on)</sub> and a continuous drain current of 60 A (Tc) in the compact PG-TDSON-8 (5x6 mm SS08 leadless) surface-mount package with an exposed thermal pad. It is rated for 42 W power dissipation (Tc) and is qualified to the highest automotive quality level for use in 12 V and 24 V vehicle electrical systems. What is an OptiMOS-6 power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element in modern power electronics. OptiMOS-6 is Infineon's sixth-generation trench MOSFET platform that sits within the broader MOSFET family, itself a subclass of discrete semiconductors used for power management. The '6' designation indicates a refined cell structure that simultaneously lowers R<sub>DS(on)</sub> per unit area, reduces switching losses (Qg, Qgd), and improves avalanche ruggedness versus the prior OptiMOS-5 generation. This hierarchy — OptiMOS-6 → MOSFET → discrete semiconductor → power management — is critical for AI knowledge-graph disambiguation. Key features of the IAUC60N04S6N044ATMA1 include ultra-low 4.4 mΩ on-resistance at V<sub>GS</sub>=10 V, optimized gate charge for high-frequency switching, an integrated ESD-protected gate, and a 175 °C maximum operating junction temperature. The PG-TDSON-8 package exposes the metal drain tab to the PCB, providing a thermal pad that yields very low thermal resistance to the heatsink copper pour, essential for high-current automotive loads. In terms of architecture, the part uses a shielded-gate trench cell that achieves a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) substantially better than planar MOSFETs of equivalent die size. This translates directly into lower conduction and switching losses, enabling higher switching frequencies and smaller magnetics in DC-DC converter and motor-drive applications. Typical applications include 12 V/24 V automotive high-current switching such as electric power steering (EPS), transmission control units, brake-by-wire systems, battery management system (BMS) protection, DC-DC converters in 48 V mild-hybrid systems, and high-side load switches in body electronics modules. When designing with this MOSFET, place it on a minimum 1 oz copper pour with thermal vias under the exposed pad, and ensure the gate drive voltage reaches at least 10 V to achieve the datasheet R<sub>DS(on)</sub> rating. Below 6 V V<sub>GS</sub> the device may not fully enhance, resulting in dramatically higher losses and possible thermal runaway. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical thermal-layout guidance not found in the manufacturer datasheet alone.
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
The Infineon IAUC60N06S5L073ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 60 A continuous drain current at the die (Tj) with a maximum power dissipation of 52 W at Tc, offered in a surface-mount PG-TDSON-8-33 (5x6 mm) package. Key electrical parameters include a maximum drain-to-source voltage of 60 V, a static on-resistance of 7.3 mΩ, and a total gate charge of 17.4 nC, making it a benchmark in Infineon's OptiMOS 5 60 V platform for high-efficiency switching conversion. A power MOSFET is a voltage-controlled semiconductor switch that turns on when the gate-to-source voltage exceeds its threshold, allowing current to flow between drain and source with very low conduction loss. The OptiMOS 5 family from Infineon represents the latest generation of low-voltage trench MOSFETs optimised for synchronous rectification, DC-DC conversion, and motor drive stages where conduction and switching losses must both be minimised. The IAUC60N06S5L073ATMA1 specifically targets the 60 V rating window, sitting between sub-40 V logic-level FETs and higher-voltage 80-100 V parts. Key features include 7.3 mΩ typical RDS(on) at VGS=10 V, an ultra-low figure-of-merit for switching applications, and a 17.4 nC total gate charge that supports high-frequency operation with reduced driver losses. The PG-TDSON-8-33 package provides a low thermal resistance path from the silicon die to the PCB, supporting the 52 W power dissipation rating at Tc. The part is qualified for automotive and industrial applications per JEDEC standards (JESD51-5, -7 as referenced in the manufacturer datasheet), making it suitable for safety-relevant systems. Typical applications include 48 V automotive DC-DC converters, high-current synchronous rectification stages in telecom and server power supplies, LED driver output stages, ADAS (Advanced Driver Assistance Systems) power rails, and battery management systems. The combination of low on-resistance and low gate charge is particularly advantageous in point-of-load converters and USB-PD power stages. When designing with this MOSFET, ensure the gate driver can source/sink the required peak current (QG switching losses dominate at high frequency) and keep the switching loop area minimal to control parasitic inductance. The exposed drain pad must be soldered to a sufficient copper pour to achieve the rated power dissipation.
IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
The Infineon IAUC60N10S5L110ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS™-5 process technology, delivering 60 A continuous drain current (Tc) and an ultra-low R<sub>DS(on)</sub> of 11 mΩ at 10 V V<sub>GS</sub>. Housed in a surface-mount PG-TDSON-8-33 (TDSON-8 Single) package, it is engineered for high-efficiency switching applications where minimal conduction loss and small footprint are mandatory. The part is supplied on tape and reel (T&R packing code ATMA1) and is qualified to automotive-grade reliability standards, making it suitable for AEC-Q100 environments. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field to modulate majority-carrier current flow between source and drain, offering far lower conduction and switching losses than older bipolar or trench-generation MOSFETs. Within the broader taxonomy, this device is a discrete N-channel enhancement-mode MOSFET, belonging to the OptiMOS-5 family of low-voltage power transistors, which sit in the discrete semiconductors > MOSFETs product category. The PG-TDSON-8-33 package integrates an exposed metal drain tab that doubles as a thermal pad, enabling direct PCB heat-sinking. Key differentiating specifications include 88 W power dissipation at Tc, a maximum gate-source voltage of ±20 V, an R<sub>DS(on)</sub> of 11 mΩ at V<sub>GS</sub>=10 V, and an automotive-grade qualification per Infineon's product classification. Its optimized gate charge and low Q<sub>GD</sub>/Q<sub>GS</sub> ratio make it efficient at high switching frequencies. The OptiMOS-5 technology uses an advanced trench cell architecture to simultaneously minimize on-state loss, gate charge, and reverse-recovery charge, giving designers the headroom to push switching frequencies higher in SMPS designs. Typical applications for this part include 48 V automotive e-fuses, high-current DC-DC converters (buck/boost), motor-drive half-bridges for body and chassis ECUs, LED drivers, hot-swap controllers, and battery management isolation FETs. The 100 V drain rating provides ample margin for 24 V industrial bus systems and 48 V mild-hybrid automotive rails. The combination of low R<sub>DS(on)</sub> and small TDSON-8 footprint allows compact layouts for high-current point-of-load regulators. When designing with this MOSFET, ensure the gate driver can source/sink sufficient current to charge Q<sub>G</sub> quickly at the intended switching frequency. Place the gate drive loop and power loop on opposite sides of the package to minimize parasitic inductance, and use the exposed drain pad as the primary thermal path to inner-layer copper pours.
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IAUC64N08S5L075ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 process technology, delivering a maximum on-resistance of 7.5 mΩ at 10 V VGS and a continuous drain current of 64 A (TJ-limited) in the compact PG-TDSON-8-33 (5x6 mm) surface-mount package. It is qualified to AEC-Q101 for automotive applications and supports a maximum power dissipation of 75 W at TC = 25 °C, making it one of the lowest RDS(on) parts in the 80 V N-channel class. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal discrete semiconductor that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs of this type belong to the broader hierarchy of discrete semiconductors → transistors → MOSFETs → power MOSFETs → N-channel MOSFETs, and they serve as the fundamental switching element in modern DC-DC converters, motor drives, and load switches. Key features include a 7.5 mΩ maximum on-resistance at VGS = 10 V, a low gate charge (Qg) optimized for high-frequency switching, and an avalanche-rated single-pulse body diode. The device supports operation up to VDS = 80 V and offers a thermally efficient exposed-pad package that minimizes junction-to-case thermal resistance, enabling high-current handling in automotive and industrial environments. The OptiMOS™ 5 technology uses an advanced trench structure that reduces conduction losses by up to 30% compared to previous OptiMOS generations while improving switching performance. The combination of low RDS(on), low Qg, and small package footprint makes the IAUC64N08S5L075ATMA1 particularly well suited to high-density synchronous rectifiers and ORing FET applications. Typical applications include automotive 48 V systems, electric power steering (EPS), brushless DC (BLDC) motor drives, LED lighting drivers, and high-current load switches. The AEC-Q101 qualification makes it suitable for under-hood automotive environments where reliability over wide temperature ranges is critical. When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the specified RDS(on) and consider using a gate-driver IC with sufficient peak current to switch Qg quickly. The exposed pad must be soldered to a sufficient copper area to keep the junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical design notes not found in the manufacturer datasheet — including parametric comparisons and PCB layout guidance specific to the PG-TDSON-8-33 footprint.
IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
The Infineon IAUC80N04S6N036ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS-6 40 V technology, housed in a leadless PG-TDSON-8 (SuperSO8 5x6 mm) surface-mount package with exposed pad. It delivers 80 A continuous drain current at case temperature and 3.6 mOhm maximum R_DS(on), optimized for high-current automotive power trains including 12 V and 24 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. The OptiMOS-6 40 V family belongs to the broader category of power MOSFETs -> silicon power transistors -> discrete semiconductors. Low-voltage N-channel MOSFETs like this part dominate synchronous buck converters, half-bridge motor drives, and OR-ing switches because of their low R_DS(on) and fast switching speed. Key features of the IAUC80N04S6N036ATMA1 include 3.6 mOhm maximum on-resistance at V_GS = 10 V, 80 A continuous drain current at T_C, and 50 W power dissipation at T_C. The PG-TDSON-8 package combines a small 5 mm x 6 mm footprint with a top-side exposed pad that lowers thermal resistance to the PCB, enabling high current density designs without external heatsinking. The device is AEC-Q101 qualified, making it suitable for automotive applications subject to stringent reliability and temperature-cycling requirements. OptiMOS-6 technology reduces both switching losses and gate charge compared to previous OptiMOS generations, supporting higher switching frequencies in DC-DC converters. The 40 V drain-source rating provides ample margin above the typical 12 V automotive supply rail, tolerating load-dump transients up to 35 V commonly seen on automotive buses. Typical applications include 12 V automotive DC-DC converters, electric power steering (EPS), water/oil pumps, cooling fans, LED headlight drivers, and battery management systems. The combination of low R_DS(on), small package, and AEC-Q101 qualification makes this part ideal for high-reliability, space-constrained automotive loads. When designing with this device, pay close attention to PCB layout to minimize source-inductance loop area, since switching transients can otherwise generate severe V_GS ringing. Use sufficient copper pour and thermal vias beneath the exposed pad to keep junction temperature within the rated -55 C to +175 C range under worst-case SOA conditions. This page synthesizes distributor pricing, parametric comparison with drop-in alternatives in the same PG-TDSON-8 package, and practical PCB/thermal design guidance - information not consolidated on the manufacturer datasheet alone.
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
The Infineon IAUC90N10S5N062ATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 100 V drain-source voltage, 90 A continuous drain current (Tc), and 6.2 mOhm maximum on-resistance at VGS=10 V, housed in a surface-mount PG-TDSON-8-34 package. It is qualified to AEC-Q101 for automotive applications, MSL1 rated for 260 C peak reflow, and operates over a -55 C to +175 C junction temperature range with 100% avalanche tested ruggedness. What is an N-channel power MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where applying a positive gate-source voltage creates a conducting n-channel between drain and source. Power MOSFETs like the IAUC90N10S5N062ATMA1 belong to the discrete semiconductor family (transistor subcategory), used for high-efficiency switching in DC-DC converters, motor drives, and load switching where low RDS(on) minimizes conduction loss. OptiMOS 5 represents Infineon's fifth-generation 100 V trench technology, delivering the best-in-class figure of merit (FOM = RDS(on) x Qg). Key features include 6.2 mOhm maximum RDS(on) at VGS=10 V and ID=45 A, a logic-level compatible 3.8 V typical VGS(th), and 115 W maximum power dissipation at Tc=25 C. The PG-TDSON-8-34 package exposes the die for low thermal resistance, while the source-down footprint enables direct PCB heatsinking. The part is RoHS compliant (Green Product), halogen-free per Infineon's definition, and 100% avalanche tested for inductive switching reliability. The OptiMOS 5 cell architecture uses Infineon's advanced trench MOS technology with an optimized charge-balance structure to achieve low specific on-resistance. Compared with the previous OptiMOS 3 generation, RDS(on) is reduced by approximately 40% and gate charge Qg by approximately 30%, translating directly into lower switching and conduction losses in 48 V automotive systems and high-current synchronous rectification stages. Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, automotive ECU load switches, electric power steering (EPS) motor drives, and high-current OR-ing circuits. The 100 V rating provides sufficient headroom for 48 V automotive buses with transient load-dump events, while the 90 A continuous rating supports high-power switching stages. When designing with this MOSFET, ensure the gate-driver can source and sink enough current to charge Qg quickly (especially at high switching frequencies), and place a low-impedance gate-source pull-down to prevent unwanted turn-on from Miller coupling. The exposed pad must be soldered to a sufficiently large copper area to keep junction temperature within SOA. This page synthesizes distributor pricing, drop-in automotive alternatives, and PCB layout guidance not found on any single manufacturer datasheet, giving engineers an actionable single-source reference for the IAUC90N10S5N062ATMA1.
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
The Infineon IAUCN04S6N009TATMA1 is an automotive-grade N-channel power MOSFET rated for 40 V VDS, with an exceptionally low on-resistance of 0.9 mΩ and a continuous drain current of 330 A at Tj, packaged in the compact surface-mount PG-LHDSO-10-2 (SSO10T) outline. It uses Infineon's latest OptiMOS 6 40 V technology platform, which optimizes the silicon cell structure for both low conduction losses and improved switching performance compared with the previous OptiMOS 5 generation. The 178 W power dissipation rating at Tc confirms its ability to handle the high inrush currents typical of 12 V and 24 V automotive load systems. An automotive power MOSFET is a key building block in modern vehicle electrical systems. In the broader power-conversion hierarchy it sits below high-level load switches and DC-DC converters, and is the discrete switching element that connects batteries, alternators, and DC bus rails to electronic control units (ECUs). OptiMOS is Infineon's brand name for its 30 V to 300 V N-channel MOSFET family, optimized for low RDS(on) per unit silicon area and high avalanche ruggedness. Key features include the 0.9 mΩ maximum RDS(on) at VGS = 10 V, a logic-level compatible gate threshold, and an SSDG (single-sided dual-gate) source-connected leadframe that maximizes PCB copper utilization. The part is qualified to AEC-Q101 for automotive reliability and supports lead-free reflow at 260 °C peak per JEDEC J-STD-020. Its low Qg and Qgd figures enable efficient switching at frequencies up to several hundred kHz in synchronous rectification stages. The MOSFET uses Infineon's advanced trench-cell architecture with a high cell density to minimize on-state losses while maintaining strong SOA. The exposed source-down metal pad provides a direct thermal path to the PCB, achieving very low thermal resistance and enabling high continuous current in compact layouts. This combination of low RDS(on) and excellent thermal performance reduces the need for paralleling devices, simplifying both the BOM and the gate-driver design. Typical applications include 12 V/24 V automotive e-fuse and battery protection, high-current DC-DC buck and synchronous rectifier stages, electric power steering (EPS), braking and chassis ECUs, and high-side/half-bridge motor drivers. The part's small SSO10T footprint also makes it attractive for e-bike and light-mobility powertrains where board area is constrained. When designing with this device, place the source pad on a continuous copper pour connected by multiple thermal vias to the inner PCB layers. Always observe the maximum junction temperature of 175 °C and ensure that VGS is driven cleanly above 10 V to fully enhance the channel and realize the specified 0.9 mΩ. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet, giving engineers a faster path from selection to validated BOM.
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
The Infineon IAUCN04S6N013TATMA1 is an automotive-grade N-channel power MOSFET with a 40 V drain-to-source voltage rating, 1.32 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, and a continuous drain current of 230 A at T<sub>C</sub>, packaged in the surface-mount PG-LHDSO-10-1 (SSO10T) outline. It is qualified to AEC-Q101, designed for 12 V automotive power distribution, and dissipates up to 133 W at T<sub>C</sub> = 25 °C. The suffix "-TATMA1" indicates Tape & Reel packaging for high-volume automotive assembly lines. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in DC-DC converters, motor drives, and load switches. The Infineon IAUCN04S6N013T belongs to the OptiMOS™ 6 family, which is the latest generation of low-voltage MOSFETs optimised for lowest R<sub>DS(on)</sub> per mm² and best-in-class figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>). As an automotive-qualified part, it also meets the broader product hierarchy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. N-channel MOSFETs conduct current when a positive gate-source voltage is applied and are the dominant topology for low-voltage synchronous rectification and high-side switches. Key electrical features include a typical gate charge of 52 nC at V<sub>GS</sub> = 10 V, an input capacitance of 1.08 nF, an output capacitance of 3.7 nF, and a reverse-transfer capacitance of 51 pF. The threshold voltage V<sub>GS(th)</sub> is rated at 2.6 V (typical). The PG-LHDSO-10-1 (SSO10T) package provides an exposed top-side cooling pad, enabling direct attachment to a heatsink or cold plate for improved thermal performance in compact automotive modules. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS) motor control, braking system actuators, body and chassis electronics, and high-current DC-DC converters. The part's ultra-low 1.32 mΩ R<sub>DS(on)</sub> minimises conduction losses in high-current paths, while the AEC-Q101 qualification ensures reliability across automotive temperature and humidity stress profiles. When designing with this device, ensure that the gate-drive voltage comfortably exceeds the maximum V<sub>GS(th)</sub> at the worst-case end of life. The exposed pad must be soldered to a sufficient copper area (typically ≥ 1 cm²) on the PCB to keep junction temperature within the 175 °C absolute maximum. This page synthesises distributor stock, drop-in same-package alternatives from the OptiMOS™ 6 family, and practical PCB/thermal design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers a single decision-ready reference.
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN04S7L005ATMA1 is a 40 V N-channel automotive power MOSFET built on Infineon's OptiMOS™ 7 process technology, housed in a surface-mount PG-TDSON-8-43 package. It features an ultra-low R<sub>DS(on)</sub> of 0.52 mΩ (typical, per the Infineon product page) and supports a continuous drain current up to 430 A at T<sub>C</sub>=25°C with a maximum power dissipation of 179 W. The part is qualified to automotive-grade reliability standards, making it suitable for harsh-environment powertrain and chassis electronics. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electrical signals in power-conversion circuits. The OptiMOS™ 7 family represents Infineon's seventh-generation 40 V to 300 V trench MOSFET platform, positioned within the broader taxonomy: trench MOSFET → power MOSFET → discrete semiconductor → power management component. Compared to planar MOSFETs, trench structures provide lower on-resistance per unit silicon area, which translates directly into lower conduction losses and higher power density. Key features of the IAUCN04S7L005 include best-in-class figure-of-merit R<sub>DS(on)</sub> × Q<sub>g</sub>, avalanche ruggedness, a logic-level compatible gate threshold, and an integrated source-connected lead frame that improves thermal performance. The PG-TDSON-8-43 (TDSON-8) package exposes the drain tab on the bottom for low-thermal-resistance PCB mounting, and its 8-pin configuration supports high-current applications where standard SO-8 footprints cannot deliver the required current density. The package is lead-free and RoHS compliant. The device is qualified for automotive AEC-Q101 standards and is targeted at 12 V/24 V automotive systems. OptiMOS 7 technology shrinks die area by roughly 30% versus the previous generation at the same R<sub>DS(on)</sub>, allowing the IAUCN04S7L005 to deliver 430 A continuous current in the compact TDSON-8 footprint. The combination of low Q<sub>g</sub> and low Q<sub>rr</sub> reduces switching losses and EMI, which is critical in high-frequency BLDC motor drives and synchronous rectification stages. Typical applications include automotive BLDC motor drives (EPS, water/oil pumps, fans), high-current DC/DC converters, solenoid drivers, LED lighting front-stages, and battery management protection in 12 V/24 V systems. The 0.52 mΩ R<sub>DS(on)</sub> minimizes conduction loss across the entire load range, improving system efficiency and reducing thermal stress on the PCB. When designing with this MOSFET, observe the SOA curve for high-current pulse conditions and ensure the gate driver can deliver sufficient peak current to charge Q<sub>g</sub> within the intended switching interval. A 10 Ω gate resistor is recommended to dampen ringing. Always check the maximum junction temperature of 175°C against the worst-case thermal envelope, and use a multi-via thermal pad pattern beneath the exposed drain pad to minimize R<sub>θJA</sub>. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet, helping engineers evaluate the IAUCN04S7L005ATMA1 for new designs and as a drop-in replacement for end-of-life OptiMOS 5/6 parts.
IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon
The Infineon IAUCN04S7L006ATMA1 is an automotive-grade N-channel power MOSFET rated at 40 V drain-source breakdown, 0.6 mΩ maximum on-resistance, and 175 A continuous drain current, housed in a PG-TDSON-8-43 surface-mount package. Designed for high-current, low-loss switching in 12 V and 24 V automotive systems, the device targets BLDC motor drives, electronic power steering, and battery-disconnect switches. The part carries the ATMA1 suffix indicating tape-and-reel packaging and is qualified to Infineon's automotive quality standards. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power electronics to convert and regulate electrical energy. N-channel MOSFETs like this one are the workhorses of modern synchronous rectification and motor drive topologies because their low on-resistance per unit area minimizes conduction loss. Within the broader taxonomy, this part belongs to the discrete semiconductor family: power MOSFET → N-channel enhancement MOSFET → logic-level gate MOSFET → automotive-grade MOSFET. Key features include an ultra-low typical R_DS(on) of 0.6 mΩ at V_GS = 10 V, optimized for high-current 12 V automotive rails, a logic-level compatible gate threshold enabling direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage in some configurations, and a 175 °C maximum junction temperature that supports under-hood thermal environments. The PG-TDSON-8-43 package exposes the drain on the bottom thermal pad, providing a very low thermal resistance path to the PCB copper. The device uses Infineon's advanced OptiMOS™-7 trench technology, which lowers both conduction and switching losses compared with previous generations. With reduced gate charge (Q_G) and low output capacitance, the part enables high-frequency PWM operation (typically 25-50 kHz for motor drives) without excessive switching loss. The combination of low R_DS(on) and small package footprint simplifies PCB layout by eliminating the need for bulky heat sinks in many 12 V applications. Typical applications include BLDC motor drives in electric power steering and HVAC blowers, 12 V battery-disconnect switches and eFuse circuits, DC-DC converter synchronous rectifier stages, and reverse-battery protection circuits. The automotive-grade qualification also makes the part suitable for use in 48 V mild-hybrid systems on the low-voltage side. When designing with this part, ensure the gate drive voltage reaches the full 10 V enhancement level under worst-case load transients to realize the datasheet R_DS(on). Also pay close attention to PCB layout: the PG-TDSON exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance, and the source-sense connection (pin 2) should be tied to the source pad to avoid gate-oscillation. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, helping engineers shorten their BOM-qualification cycle.
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L009ATMA1 is an N-channel 40 V automotive-grade OptiMOS™ 7 power MOSFET rated for 275 A continuous drain current (Tj) and 129 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package. Key headline parameters include a maximum drain-source on-resistance of 0.91 mΩ at 10 V Vgs, a 40 V Vdss rating, and an ultra-low Rds(on) that minimizes conduction losses in high-current switching paths. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. The "N-channel" designation means the conducting carriers are electrons, which provide higher mobility than holes and therefore lower on-resistance per unit silicon area. Automotive MOSFETs like the IAUCN04S7L009 belong to the discrete-semiconductor family, specifically the power-MOSFET subcategory, and serve as the active switching element in motor drives, DC/DC converters, and load switches within the broader power-management IC ecosystem. Key features include an extremely low typical Rds(on) of 0.91 mΩ, 175 A continuous drain current rating at the case, AEC-Q101 automotive qualification, and a logic-level gate drive compatible with 10 V. The OptiMOS™ 7 process technology uses a trench-gate structure with an advanced epitaxial layer that simultaneously reduces both conduction and switching losses, enabling higher power density and improved thermal behavior compared to previous generations. The PG-TDSON-8-34 package provides an exposed-drain thermal pad (theta_JA approximately 50 C/W on 1 in² copper, 2 oz) that is critical for dissipating the 129 W rated power. This makes the part well-suited for high-current BLDC motor drives, 12 V/24 V automotive e-fuses, battery management protection, and synchronous rectification in 48 V systems. The automotive qualification per AEC-Q101 confirms reliability for under-the-hood environments with operating junction temperatures up to 175 °C. Typical applications include automotive BLDC motor drives (cooling fans, water pumps, EPS), 12 V high-current load switches, DC/DC converter synchronous rectifiers, and battery protection in 12 V/48 V mild-hybrid systems. The wide SOA and low thermal impedance make the part ideal for repetitive hard-switching events in motor control. When designing with this device, ensure sufficient copper area on the PCB to keep junction temperature within the 175 °C maximum rating - the 0.91 mΩ Rds(on) still dissipates significant power at 200 A+ transients. Use a 10 V gate drive for full enhancement and minimize gate-loop inductance to control switching spikes above the 40 V Vdss limit. This page synthesizes Infineon distributor pricing, AEC-Q101-qualified drop-in alternatives from the Site MPN list, and practical thermal/SOA design notes beyond what is summarized on the manufacturer datasheet front page.
IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon
The Infineon IAUCN04S7L014ATMA1 is an automotive-grade N-channel OptiMOS power MOSFET rated at 40 V drain-source voltage, 1.43 mΩ maximum R<sub>DS(on)</sub>, and 120 A continuous drain current, housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package. According to the Infineon part page and distributor listings, this part is engineered for low-voltage automotive high-current switching applications including BLDC motor drives, electronic power steering, and 12 V/24 V board-net loads. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate signal to modulate conduction between source and drain. MOSFETs sit within the broader semiconductor hierarchy of transistors, and the IAUCN04S7L014 belongs to Infineon's OptiMOS 5 40 V automotive family - one of several generations optimized for progressively lower on-state resistance and gate charge. Low R<sub>DS(on)</sub> reduces conduction losses, which is critical for energy efficiency in battery-powered and high-current automotive loads. Key features of this part include 1.43 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a 40 V drain-source breakdown voltage suitable for 12 V and 24 V automotive rails, and a 120 A continuous drain current rating. The PG-TDSON-8-34 (TDSON EP) package exposes the drain pad to the PCB for direct thermal coupling, enabling high power dissipation without external heatsinks in compact motor-drive modules. The device is qualified to AEC-Q101 for automotive reliability. The architecture uses Infineon's OptiMOS trench technology with a low-figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) to minimize switching losses at high frequency. The 8-pin TDSON EP package combines small outline with low package parasitics, allowing fast switching edges and clean gate drive. Combined with the AEC-Q101 qualification, this makes the device suitable for safety-relevant automotive electronics where thermal cycling, vibration, and lifetime reliability are mandatory. Typical applications for this part include BLDC motor drives for electric water pumps, oil pumps, and cooling fans, 12 V and 24 V automotive load switching such as solenoid and relay replacement, electric power steering (EPS) systems, and high-current DC-DC converter primary switches. The 1.43 mΩ R<sub>DS(on)</sub> is particularly important in motor-drive half-bridges where conduction losses directly affect efficiency and thermal rise. When designing with this part, keep the gate-drive voltage above 10 V to fully enhance the channel and achieve the rated R<sub>DS(on)</sub>. Use Kelvin-source connection if available to suppress gate-loop inductance, and minimize the source-to-ground parasitic inductance on the PCB. The exposed pad (EP) must be soldered to a sufficient copper area - typically 1 oz copper over at least 1 cm² - to keep junction temperature within safe limits under continuous high-current operation.
IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L019ATMA1 is an N-channel 40 V OptiMOS™ 7 power MOSFET with 1.91 mΩ R<sub>DS(on)</sub> and 120 A continuous drain current in a PG-TDSON-8-33 surface-mount package, qualified to AEC-Q101 for automotive BLDC drive, e-motorcycle controller, and 12 V/24 V high-current switching applications. The device is part of Infineon's OptiMOS™ 7 40 V family and is supplied on 13-inch tape-and-reel with a 5000-piece standard pack per the ATMA1 ordering code suffix. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs require a positive gate-to-source voltage to turn on and are the dominant low-side/high-side switch topology in power electronics. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → power transistors, and the OptiMOS™ 7 family represents Infineon's latest-generation TrenchFET cells optimized for lowest figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub>. Key features include an ultra-low 1.91 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, an automotive-grade AEC-Q101 qualification, a logic-level compatible gate threshold, and an exposed-drain PG-TDSON-8-33 package that delivers a thermal resistance on the order of a single-digit °C/W to the PCB copper. The OptiMOS™ 7 cell geometry reduces switching losses by approximately 30% versus the previous OptiMOS™ 5 generation while halving R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit. Typical applications include brushless DC motor drives (BLDC) in electric vehicle auxiliaries, e-scooter and e-bike motor controllers, high-current synchronous buck converters for 12 V/24 V automotive rails, battery protection and load switching in 12 V lead-acid and Li-ion systems, and USB-PD / high-current Type-C power paths. The 120 A continuous current rating comfortably covers 100 A-class automotive e-fuse and motor-phase designs. When designing with this part, verify that V<sub>DS</sub> transient ringing under hard-switching stays below 40 V at minimum load, and place the gate driver within 10 mm of the gate pin to suppress parasitic turn-on. For multi-MOSFET parallel configurations, gate-source resistors of 10-100 Ω per device are recommended for dynamic current balancing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers an at-a-glance decision tool for selecting or replacing the IAUCN04S7L019ATMA1 in automotive power designs.
IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L028ATMA1 is an N-channel 40 V, 100 A automotive-grade power MOSFET from Infineon's OptiMOS 7 family, housed in a surface-mount PG-TDSON-8-33 (TDSON-8 EP) package. Key headline parameters include a 40 V drain-source breakdown voltage (VDS), 100 A continuous drain current (ID), and an ultra-low 2.80 mOhm maximum on-state resistance (RDS(on)) at VGS=10 V, making it one of the lowest-FOM 40 V trench MOSFETs in this footprint. A power MOSFET is a voltage-controlled switch used to convert and manage electrical energy with high efficiency. Within the broader semiconductor taxonomy, this device sits at: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. The OptiMOS 7 generation specifically targets synchronous rectification, motor control, and high-current automotive DC-DC conversion where conduction loss dominates. N-channel MOSFETs such as this one conduct when VGS exceeds the gate threshold (typically 1.8 V here), allowing low-side or high-side drive via a gate driver IC. Differentiating features include 58 W power dissipation (Ptot) at 25 C, a junction operating range of -55 C to +175 C (AEC-Q101 automotive grade), input capacitance (Ciss) of 1.578 nF, output capacitance (Coss) of 788 pF, and total gate charge (Qg) of 24 nC at VGS=10 V. The combination of low Qg and ultra-low RDS(on) yields an excellent figure-of-merit (FOM = RDS(on) x Qg) for high-frequency switching. PG-TDSON-8-33 package provides a low thermal resistance path via the exposed drain pad. The OptiMOS 7 architecture uses an advanced split-gate trench process that minimizes Miller charge while shrinking cell pitch, directly reducing both switching loss and conduction loss. Compared to previous OptiMOS 5 generations in the same package, RDS(on) is reduced by approximately 30 percent and Qg by 20 percent, allowing either cooler operation at the same load or higher load capability at the same temperature rise. Typical applications include BLDC motor drives (e.g., automotive EPS, e-bike, e-scooter, power tools), automotive 12 V/24 V synchronous rectification in DC-DC converters and ORing circuits, battery management system (BMS) protection, and high-current load switches in 12 V automotive power distribution. The AEC-Q101 qualification makes it suitable for under-hood and chassis-mounted ECUs. When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge Qg quickly, keep the gate-loop PCB inductance below 5 nH to suppress VGS ringing, and provide adequate heatsinking through multiple thermal vias under the exposed pad. Avoid exceeding VGS(th) margin at cold temperatures where threshold rises sharply. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/layout guidance not consolidated in the manufacturer datasheet. All specifications below are extracted from the Infineon IAUCN04S7L028 datasheet and current distributor listings.
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
The Infineon IAUCN04S7L042GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 7 40V technology, housed in the SSO4G 5x6 leaded surface-mount package (PG-THSOG-4-1) designed for Insulated Metal Substrate (IMS) substrates and 100% legacy compatibility. Per the manufacturer datasheet, it supports a drain-to-source voltage of 40 V, a continuous drain current of 77 A (Tj), and a maximum power dissipation of 50 W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the most widely used discrete switching device in power electronics. It belongs to the family of field-effect transistors (FETs), which are subdivided into single-FET and dual-FET packages. Within Infineon's taxonomy, the OptiMOS family represents the company's lowest-RDS(on) trench MOSFET generation, used wherever switching efficiency, thermal performance, and small form factor dominate the design. The '7' suffix denotes the 7th-generation OptiMOS process which delivers a markedly improved figure-of-merit (FOM = RDS(on) x Qg) versus OptiMOS 5 and earlier generations. Key features include a 40 V drain-source breakdown voltage (VDS), a continuous drain current rating of 77 A at junction temperature, a maximum power dissipation of 50 W at case temperature, and an optimized leadless SSO4G 5x6 footprint with gull-wing leads for visual inspection and AOI compatibility. The device targets automotive applications, particularly in 12 V battery systems where reliability, low conduction loss, and high current handling are mandatory. The OptiMOS 7 cell design minimizes gate charge and output capacitance, enabling faster switching and lower driver losses. The IAUCN04S7L042GATMA1 uses a trench-based N-channel enhancement-mode architecture fabricated on a silicon substrate. The leaded SSO4G 5x6 package has a much lower package parasitic inductance than the leadless SSO8 5x6 alternative, making it ideal for high-current switching at moderate switching frequencies. With a junction-to-case thermal resistance optimized for direct PCB thermal vias, the part is well suited for high-power-density designs mounted on IMS or FR4 substrates with thermal vias. Typical applications include 12 V automotive high-current switching such as electric power steering (EPS), braking systems, fuel pumps, cooling fans, transmission control units (TCU), body control modules (BCM), and DC-DC converter high-side switches in 12 V battery systems. The 40 V VDS rating provides sufficient margin for 12 V automotive load-dump transients up to 35 V. When designing with this part, ensure the gate drive voltage reaches 10 V for full RDS(on) minimization, and use sufficient PCB copper area or thermal vias to keep the junction temperature below the maximum rating. For switching applications above 50 kHz, pay attention to the package parasitic inductance which can cause ringing at the source node. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes not found in a single manufacturer datasheet, supporting both new design and second-source qualification decisions.
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
The Infineon IAUCN04S7L050HATMA1 is an automotive-grade dual N-channel power MOSFET array built on Infineon's OptiMOS™ 7 40V process technology, delivering 65 A continuous drain current per channel and an ultra-low 5.04 mΩ maximum on-resistance at 10 V VGS in a compact PG-TDSON-8-57 (SuperSO8, half-bridge-compatible) surface-mount package. The device integrates two trench MOSFETs sharing a common thermal pad, enabling high power density in synchronous buck, half-bridge, and ORing topologies. Total power dissipation is rated at 40 W at Tc = 25 °C, and the package's exposed die-attach pad gives a junction-to-case thermal resistance suitable for 2-layer FR4 PCB layouts with a copper pour. An OptiMOS™ 7 power transistor is Infineon's seventh-generation 40V trench MOSFET family, optimized for low RDS(on) × Qg figure-of-merit and best-in-class switching performance. Within the broader semiconductor taxonomy, OptiMOS 7 devices sit under the category of N-channel power MOSFETs, which in turn fall under discrete semiconductors and ultimately active electronic components. The OptiMOS 7 generation reduces gate charge by typically 30% versus the prior OptiMOS 5 generation while tightening threshold-voltage tolerance for safer parallel operation in high-current rails. Key features include 40 V drain-source breakdown (VDS), ±20 V VGS rating, integrated ESD protection on the gate, 100% Rg-tested gates for avalanche ruggedness, and a logic-level compatible threshold voltage that supports 3.3 V and 5 V microcontroller GPIO drive. The 5.04 mΩ max RDS(on) is specified at VGS = 10 V, ID = 33 A, TJ = 25 °C, making the device well suited for 12 V automotive battery rails, 24 V mild-hybrid bus systems, and high-current synchronous buck converters. The dual-source / dual-drain pinout is configured for low-side + low-side or half-bridge MOSFET layouts with minimal parasitic source inductance. Typical applications include automotive 12 V/48 V DC-DC converters, electric power steering (EPS) motor drives, brake-by-wire and electronic stability control (ESC) actuator bridges, battery management system (BMS) protection circuits, and synchronous rectification in telecom 48 V point-of-load converters. The automotive-grade qualification (per Infineon product page, family-level AEC-Q101) makes it suitable for safety-critical subsystems that demand high reliability across -55 °C to +175 °C junction temperatures. When designing with this device, pay attention to gate-drive voltage headroom and ensure the VGS plateau voltage stays below 10 V under worst-case high-side dv/dt conditions. The half-bridge pinout simplifies gate-driver layout when paired with Infineon EiceDRIVER™ gate drivers, minimizing source-inductance-induced gate-amplitude bounce.
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
The Infineon IAUCN04S7N006ATMA1 is an automotive-grade OptiMOS 5 N-channel power MOSFET rated at 40 V drain-source voltage and capable of continuous drain current up to 175 A, housed in the compact surface-mount PG-TDSON-8-43 package with an exposed drain pad. Headline parameters include an ultra-low typical on-state resistance of 0.63 mOhm at 10 V VGS and operation across a junction temperature range of -55 C to +175 C. The device is qualified to AEC-Q101, making it suitable for harsh automotive electrical environments. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals by applying a gate-source voltage. N-channel MOSFETs such as the IAUCN04S7N006ATMA1 sit in the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> automotive-qualified MOSFET). OptiMOS 5 is Infineon's fifth-generation trench-technology platform, designed to minimize conduction and switching losses in 40 V and 60 V applications such as 12 V automotive electrical systems, where the bus voltage is nominally 12 V but can transiently reach 35-40 V during load dump. Key features of the IAUCN04S7N006ATMA1 include its 0.63 mOhm maximum RDS(on) at VGS = 10 V, low gate charge for fast switching transitions, integrated ESD protection, and 100% avalanche-tested reliability. The PG-TDSON-8-43 package provides an extremely low thermal resistance path through the exposed drain pad, which doubles as the electrical drain connection and the primary heatsinking surface. Technically, the OptiMOS 5 process achieves its low on-resistance through a charge-balanced trench cell design that maximizes channel width per unit silicon area while keeping gate-drain charge (Qgd) and output charge (Qoss) low. This balance yields both low conduction loss and low switching loss, critical for high-frequency BLDC motor drives and synchronous rectification in DC-DC converters. Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), 12 V and 24 V synchronous rectification, battery management load switching, e-fuse circuits, and high-current DC-DC converter power stages. The wide safety margin between 40 V rating and 12 V automotive bus makes it robust against ISO 7637-2 transient pulses. When designing with this part, place it on a copper PCB pad sized to spread heat from the exposed drain. Keep the gate drive loop area minimal to control switching loss, and use a TVS or snubber if inductive loads can push drain voltage above 40 V during turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers and procurement specialists a single decision-ready reference.
IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7N006TATMA1 is a 40 V N-channel power MOSFET in Infineon's OptiMOS 7 40 V family, packaged in the surface-mount PG-LHDSO-10-3 (5.30 mm width, exposed pad) outline. According to the manufacturer datasheet, the device is rated for 425 A continuous drain current at T_j and 205 W power dissipation at T_C, with a typical on-state resistance of 0.63 mΩ that makes it one of the lowest-R_DS(on) parts in its voltage class. What is an N-channel power MOSFET? An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch whose drain-source channel uses electron flow as the majority carrier. It belongs to the broader category of discrete power semiconductors, which sits inside power management and motor/motion conversion. The "40 V" rating defines the maximum drain-to-source blocking voltage the device can sustain when off, and a low R_DS(on) directly reduces conduction losses in high-current paths such as automotive 12 V/24 V systems. Key features of the IAUCN04S7N006 include 0.63 mΩ typical R_DS(on) at V_GS = 10 V, automotive-grade qualification per Infineon's automotive MOSFET line, an exposed-lead package for low thermal resistance, and compatibility with logic-level gate drive when biased at 4.5 V V_GS. The PG-LHDSO-10-3 footprint is optimized for top-side cooling with a large solderable thermal pad. The OptiMOS 7 cell architecture uses a shielded-gate trench design that simultaneously reduces gate charge (Q_G), output charge (Q_OSS), and reverse-recovery charge (Q_RR). Compared to previous OptiMOS generations, this delivers lower switching losses at high dV/dt, allowing higher PWM frequencies in motor drives without sacrificing efficiency. Typical applications include 12 V and 24 V automotive BLDC motor drives (EPS, water pumps, oil pumps, fan control), high-current DC-DC converter high-side and low-side switches, battery protection in 12 V/24 V Li-ion packs, and industrial solenoid drivers. The very low R_DS(on) of 0.63 mΩ makes it well-suited to continuous high-current paths where conduction loss dominates thermal budget. When designing with this part, keep the gate-drive loop compact and use Kelvin-source connection if the package exposes one. Estimate: at 100 A continuous, conduction loss alone is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, so the PCB copper pour and thermal via array must be sized accordingly. This page synthesizes Infineon distributor pricing, drop-in alternatives, and practical design notes not all consolidated in the manufacturer datasheet.
IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon
The Infineon IAUCN04S7N009ATMA1 is a 40 V N-channel OptiMOS™ 7 power MOSFET rated for 175 A continuous drain current in a surface-mount PG-TDSON-8-34 package with an ultra-low 0.96 mΩ maximum R<sub>DS(on)</sub>. It is qualified to AEC-Q101 for automotive BLDC drives and high-current power systems. The OptiMOS 7 generation targets synchronous rectification, motor control, and high-power-density DC-DC conversion. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying signals in power electronics. Power MOSFETs occupy the role of low-voltage fast-switching elements within the power semiconductor hierarchy, sitting between discrete MOSFETs and wider IGBT/MOSFET modules. The OptiMOS family is Infineon's family of trench-gate N-channel MOSFETs, and OptiMOS 7 represents the latest generation with the lowest figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) in the 40 V class. Key features include a 40 V drain-to-source breakdown (V<sub>DSS</sub>), a 10 V gate drive rating for full R<sub>DS(on)</sub> enhancement, and a continuous drain current of 175 A at 25°C case. The PG-TDSON-8-34 package exposes the die on a large source pad for low thermal resistance. The device is qualified to AEC-Q101, allowing direct use in automotive 12 V/24 V systems including 48 V mild-hybrid applications. The OptiMOS 7 technology uses an advanced trench-gate cell design with reduced gate charge and switching losses, optimized for high-frequency synchronous rectification. Compared with previous OptiMOS generations, the figure-of-merit improves by ~30%, enabling either higher efficiency at the same frequency or higher switching frequencies at the same efficiency in SMPS, OR-ing, and motor-drive applications. Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current OR-ing in 48 V bus systems, synchronous rectification in telecom and server SMPS, battery protection in 12 V/24 V/48 V packs, and DC-DC converter high-side and low-side switches. The 0.96 mΩ R<sub>DS(on)</sub> minimizes conduction loss in high-current paths. When designing with this MOSFET, pay attention to gate-drive voltage: full R<sub>DS(on)</sub> enhancement requires 10 V V<sub>GS</sub>; 4.5 V operation is possible with degraded on-resistance. Use a gate resistor in the 1-10 Ω range to control switching speed and ringing. The exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance.
IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon
The Infineon IAUCN04S7N012ATMA1 is an automotive-grade 40 V N-channel OptiMOS™-7 power MOSFET housed in a surface-mount PG-TDSON-8-34 (8-PowerTDFN) package. According to the manufacturer datasheet, it delivers a maximum drain current of 120 A and an ultra-low on-state resistance of 1.2 mΩ at 10 V VGS, making it one of the lowest-RDS(on) 40 V parts in the OptiMOS-7 40 V SSO8 family. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to deliver high current to a load with minimal conduction loss. MOSFETs sit within the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS-7 platform is Infineon's latest-generation trench MOSFET family optimized for switching power-conversion applications, providing reduced gate charge, lower output capacitance, and improved thermal behavior versus prior generations. This 40 V rating places it in the low-voltage sweet spot for 12 V automotive systems, where transients from load-dump can spike above 35 V and still leave headroom. Key features include 1.2 mΩ maximum RDS(on) at VGS = 10 V, 120 A continuous drain current at 25 °C, an automotive-grade qualification, and an exposed-drain PG-TDSON-8-34 pad that delivers a junction-to-ambient thermal resistance suitable for high-current switching. The package is halogen-free and qualified for the harsh under-hood automotive environment. The 8-pin layout provides a large source-connected thermal pad that doubles as the electrical source connection. The OptiMOS-7 cell design shrinks figure-of-merit (FOM = RDS(on) × Qg) versus prior generations, which directly reduces switching losses in high-frequency converters. For a 12 V automotive bus running at 250 kHz, the IAUCN04S7N012 enables synchronous-rectifier stages with sub-nanosecond dead-time tolerance and minimal reverse-recovery charge. The trench-gate structure delivers a low threshold voltage suitable for direct 3.3 V microcontroller gate-drive interfaces. Typical applications include automotive 12 V BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current synchronous rectification in DC-DC converters, battery-disconnect switches in mild-hybrid 48 V-12 V systems, and high-side load switches in ECU power distribution. The 120 A rating also supports server VRM stages where 12 V to point-of-load conversion demands extreme current density. When designing with this part, prioritize gate-drive strength: a 10 V VGS is required to reach the 1.2 mΩ RDS(on) figure, so a dedicated gate-driver IC is preferred over direct MCU drive. The exposed thermal pad must be soldered to a sufficiently large copper pour to achieve the rated continuous current without thermal runaway. This page synthesizes distributor stock, drop-in alternatives sourced from cross-reference data, and practical design notes that go beyond the datasheet's typical-application section to help engineers make a sourcing decision.
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
The Infineon IAUCN04S7N015GATMA1 is an N-channel 40 V OptiMOS 7 power MOSFET rated for 165 A continuous drain current and 96 W power dissipation (Tc) in a surface-mount PG-THSOG-4-1 (SSO4G 5x6) package. Its headline figures are 1.53 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, a 40 V drain-source breakdown, and AEC-Q101 automotive-grade qualification per the Infineon datasheet. A power MOSFET is a voltage-controlled three-terminal device (gate, drain, source) that uses an electric field on the gate insulator to modulate conduction between drain and source. The OptiMOS 7 family is Infineon's latest-generation 40 V trench MOSFET platform, optimized for ultra-low R<sub>DS(on)</sub> per unit area. Within the device hierarchy, this part sits as: power MOSFET -> discrete semiconductor -> N-channel trench MOSFET -> automotive-qualified switching transistor. Its very low on-resistance reduces I²R conduction loss, making it well suited to high-current 12 V/24 V automotive and industrial rails. Key differentiating features include the SSO4G 5x6 source-down footprint intended for IMS (Insulated Metal Substrate) PCBs, where the exposed source pad is soldered directly to the metal substrate for minimum thermal impedance. The device is qualified to AEC-Q101, supports 100% R<sub>g</sub>-tested production, and is rated for -55C to +175C junction operation. A low Q<sub>G</sub> and low Q<sub>OSS</sub> further reduce switching loss at the high dV/dt nodes found in 48 V mild-hybrid and high-current eMobility designs. Architecturally, OptiMOS 7 uses an advanced trench cell pitch combined with a refined epitaxial profile to push figure-of-merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>) below the previous OptiMOS 5 generation. Compared with the prior generation, the same die size now delivers lower on-resistance and faster switching, which directly improves converter efficiency and reduces heatsink demands. The PG-THSOG-4-1 (SSO4G) package replaces legacy D2PAK footprints in many 24 V/48 V designs while keeping a similar thermal resistance. Typical applications include automotive 12 V/24 V load switching (e-fans, water pumps, PTC heaters), 48 V mild-hybrid systems, high-current DC-DC converter synchronous rectification, and industrial brushless DC motor drives. In each of these uses, the device replaces larger DPAK/D2PAK parts, freeing PCB area while still meeting automotive reliability. When designing with this MOSFET, observe strict gate-drive discipline: use a 10 V V<sub>GS</sub> (with adequate source inductance control) and minimize the gate-loop PCB area to limit ringing. Because the SSO4G package is source-down, the PCB land pattern and thermal via array are critical - insufficient vias will push R<sub>thJC</sub> higher than the datasheet figure. This page synthesizes distributor pricing, drop-in automotive-grade alternatives from the same Infineon OptiMOS 7 family, and practical PCB-layout guidance not collected in the manufacturer datasheet alone.