IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
N.º de pieza: IAUCN04S7L042GATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.42 | $142,00 |
| 500 | $1.2 | $600,00 |
| 1.000 | $1.02 | $1.020,00 |
| 5.000 | $0.86 | $4.300,00 |
IAUCN04S7L042GATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the most widely used discrete switching device in power electronics. It belongs to the family of field-effect transistors (FETs), which are subdivided into single-FET and dual-FET packages. Within Infineon's taxonomy, the OptiMOS family represents the company's lowest-RDS(on) trench MOSFET generation, used wherever switching efficiency, thermal performance, and small form factor dominate the design. The '7' suffix denotes the 7th-generation OptiMOS process which delivers a markedly improved figure-of-merit (FOM = RDS(on) x Qg) versus OptiMOS 5 and earlier generations.
Key features include a 40 V drain-source breakdown voltage (VDS), a continuous drain current rating of 77 A at junction temperature, a maximum power dissipation of 50 W at case temperature, and an optimized leadless SSO4G 5x6 footprint with gull-wing leads for visual inspection and AOI compatibility. The device targets automotive applications, particularly in 12 V battery systems where reliability, low conduction loss, and high current handling are mandatory. The OptiMOS 7 cell design minimizes gate charge and output capacitance, enabling faster switching and lower driver losses.
The IAUCN04S7L042GATMA1 uses a trench-based N-channel enhancement-mode architecture fabricated on a silicon substrate. The leaded SSO4G 5x6 package has a much lower package parasitic inductance than the leadless SSO8 5x6 alternative, making it ideal for high-current switching at moderate switching frequencies. With a junction-to-case thermal resistance optimized for direct PCB thermal vias, the part is well suited for high-power-density designs mounted on IMS or FR4 substrates with thermal vias.
Typical applications include 12 V automotive high-current switching such as electric power steering (EPS), braking systems, fuel pumps, cooling fans, transmission control units (TCU), body control modules (BCM), and DC-DC converter high-side switches in 12 V battery systems. The 40 V VDS rating provides sufficient margin for 12 V automotive load-dump transients up to 35 V.
When designing with this part, ensure the gate drive voltage reaches 10 V for full RDS(on) minimization, and use sufficient PCB copper area or thermal vias to keep the junction temperature below the maximum rating. For switching applications above 50 kHz, pay attention to the package parasitic inductance which can cause ringing at the source node.
This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes not found in a single manufacturer datasheet, supporting both new design and second-source qualification decisions.
Alternativas directas para IAUCN04S7L042GATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IAUCN04S7L042GATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Automotive Qualification, MSL Level, Operating Temperature Range.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IAUCN04S7N027GATMA1
✅ Sustitución directa✓ En stock
$0.72 / unidad
Ver hoja de datos →IAUCN04S7N019GATMA1
✅ Sustitución directa✓ En stock
$0.82 / unidad
Ver hoja de datos →IAUCN04S7L050HATMA1
✅ Sustitución directa✓ En stock
$0.83 / unidad
Ver hoja de datos →IAUCN04S7N015GATMA1
✅ Sustitución directa✓ En stock
$2.21 / unidad
Ver hoja de datos →IAUC120N04S6N009ATMA1
✅ Sustitución directa✓ En stock
$1.6 / unidad
Ver hoja de datos →IAUCN04S7L042GATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 40V |
| Technology | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A |
| Maximum Power Dissipation (PD, Tc) | 50 W |
| Encapsulado | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Tipo de montaje | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) |
| Polarity / Channel Type | N-Channel enhancement mode |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Estado RoHS | Compliant |
| Nivel MSL | 1 |
| Packing | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | IMS substrate and legacy FR4 designs |
Configuración de pines de IAUCN04S7L042GATMA1
| Pin 1 | Gate (G) — Gate drive input |
| Pin 2 | Source (S) — Source terminal (connected to ground return in high-side config) |
| Pin 3 | Source (S) — Source terminal (kelvin connection recommended for high-current paths) |
| Pin 4 | Drain (D) — Drain terminal (also thermal pad, exposed for IMS mounting) |
Área de funcionamiento seguro (SOA)
Aplicaciones típicas
IAUCN04S7L042GATMA1 es adecuado para 6 aplicacións: Electric Power Steering (EPS), Automotive Fuel Pump & Water Pump Drive, Cooling Fan Control, Body Control Module (BCM) High-Side Switch, Transmission Control Unit (TCU) Solenoid Drive, 12V to 48V DC-DC Converter High-Side Switch.
Electric Power Steering (EPS)
The IAUCN04S7L042GATMA1 is well suited for 12 V electric power steering motor drive and high-side switching. The 40 V VDS rating exceeds 12 V automotive load-dump transients up to 35 V, the 77 A continuous drain current supports the inrush of EPS assist motors, and the SSO4G 5x6 leaded package is optimized for IMS substrates that dominate power steering PCB designs. Placed in the high-side position with a 10 V gate drive from a dedicated gate driver such as the IR2104STRPBF or 1ED3142MC12HXUMA1, the MOSFET achieves full RDS(on) minimization. The leaded 5x6 footprint reduces source inductance compared to leadless variants, suppressing VGS ringing and EMI in PWM-driven steering systems.
Recomendado
Automotive Fuel Pump & Water Pump Drive
For 12 V brushed and brushless DC fuel and water pumps, the IAUCN04S7L042GATMA1 provides the high inrush current capability required at motor start. The 77 A ID rating handles the locked-rotor surge that occurs during pump stall conditions, while the 50 W power dissipation rating at Tc allows sustained switching in PWM-driven variable-speed pumps. The SSO4G 5x6 leaded package dissipates heat directly through the drain tab into the IMS substrate or thermal via array, keeping Tj below 150 C even under continuous 10 A load. Infineon's automotive-grade quality makes it a strong fit for under-hood environments with -40C to +125C ambient temperature swings.
Recomendado
Cooling Fan Control
Engine cooling fans and HVAC blower motors in 12 V automotive systems require high-current switching with reliable thermal performance. The IAUCN04S7L042GATMA1's 77 A continuous drain current and 50 W power dissipation at Tc make it suitable for driving fan motor MOSFET stages in PWM-controlled variable-speed fan systems. The OptiMOS 7 40V technology reduces switching losses versus older OptiMOS 5 generations, allowing higher PWM frequencies for finer speed control. Mounted on IMS substrates with thermal vias, it maintains low junction temperatures even at 100% duty cycle in sustained high-load cooling conditions such as towing or steep-grade driving.
Recomendado
Body Control Module (BCM) High-Side Switch
For body control module high-side switching of loads like heated seats, mirrors, and rear-window defrosters, the IAUCN04S7L042GATMA1 provides robust 40 V VDS protection with 77 A continuous current capability. The low RDS(on) of OptiMOS 7 40V reduces I2R conduction losses compared to older generation parts, improving BCM thermal performance. The leaded SSO4G 5x6 package supports both IMS and FR4 PCB designs with thermal vias, giving layout flexibility for distributed body-electronics architectures. Per Infineon's automotive-grade qualification, the part meets the reliability requirements of 12 V BCM applications.
Recomendado
Transmission Control Unit (TCU) Solenoid Drive
In 12 V transmission control units, the IAUCN04S7L042GATMA1 drives shift solenoids and pressure-control valves with high inrush current capability. The 77 A ID rating covers the worst-case solenoid transient, while 50 W PD at Tc supports sustained switching duty cycles. OptiMOS 7 40V's low Qg reduces gate-drive power requirements, which simplifies the isolated gate-driver design and reduces TCU standby current. The SSO4G 5x6 leaded footprint mounts on FR4 with thermal vias for cost-sensitive TCU designs, or directly on IMS for higher-power modules.
Recomendado
12V to 48V DC-DC Converter High-Side Switch
For automotive 48 V mild-hybrid DC-DC converters where the high-side switch blocks 48 V, the IAUCN04S7L042GATMA1 is unsuitable due to its 40 V VDS rating - choose IAUC120N04S6N009ATMA1 or a 60-100 V part instead. However, in 12 V buck/boost converters for USB power delivery, infotainment, and ADAS sensor supplies, this MOSFET's 40 V VDS rating provides 25% margin above 12 V nominal and handles load-dump events up to 35 V. The 77 A ID rating supports 500 W+ 12 V buck converters. OptiMOS 7's low Qg x RDS(on) FOM enables > 200 kHz switching, reducing magnetic component size.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IAUCN04S7L042GATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IAUCN04S7N027GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-THSOG-4 (SSO4G 5x6) | PG-THSOG-4 (SSO4G 5x6) - same | PG-THSOG-4 (SSO4G 5x6) - same | PG-THSOG-4 (SSO4G 5x6) - same | PG-THSOG-4 (SSO4G 5x6) - same | PG-THSOG-4 (SSO4G 5x6) - same |
| Process Generation | OptiMOS 7 40V | OptiMOS 7 40V | OptiMOS 7 40V | OptiMOS 7 40V | OptiMOS 7 40V | OptiMOS 6 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 77 A | 77 A (same family rating structure) | 77 A (same family rating structure) | 77 A (same family rating structure) | 77 A (same family rating structure) | 120 A (higher rating, OptiMOS 6) |
| RDS(on) Grade | L042 grade (~4.2 mOhm class) | N027 grade (~2.7 mOhm class) | N019 grade (~1.9 mOhm class) | L050 grade (~5.0 mOhm class) | N015 grade (~1.5 mOhm class) | N009 grade (~0.9 mOhm class, OptiMOS 6) |
| Automotive Grade | Yes (Infineon automotive, AEC-Q101) | Yes (Infineon automotive) | Yes (Infineon automotive) | Yes (Infineon automotive) | Yes (Infineon automotive) | Yes (Infineon automotive) |
Diferenciadores clave
- OptiMOS 7 generation with superior FOM (frente a IAUC120N04S6N009ATMA1)
- Leaded SSO4G 5x6 package for IMS substrates (frente a Standard SO-8 or PQFN MOSFETs)
- Wide RDS(on) grade selection within the same package (frente a Other 40V N-MOSFETs in different packages)
Notas de diseño
The SSO4G 5x6 leaded package (PG-THSOG-4) is designed for direct mounting on Insulated Metal Substrate (IMS) boards or FR4 designs with thermal vias beneath the drain tab. Estimated: at 5 W continuous dissipation on a 25x25 mm IMS substrate with 2 W/(m*K) dielectric, junction temperature rise above ambient is approximately 30-40 C, keeping Tj well below 175 C maximum. For FR4 designs without thermal vias, derate maximum power by 50% or increase copper area to at least 1 square inch on the drain pad layer.
Place a 10 kohm gate-source pull-down resistor directly at the gate pin to prevent inadvertent turn-on from Miller coupling during high dV/dt switching events. Keep the gate-drive loop area below 50 mm squared to minimize parasitic inductance and ringing. Source-perception (Kelvin connection on pin 3) is recommended above 50 kHz switching frequencies to prevent source-inductance-induced gate-voltage depression that effectively reduces VGS during turn-on.
Do not exceed VGS of +/- 20 V absolute maximum. Use a dedicated gate-driver IC (such as IR2104STRPBF or 1ED3142MC12HXUMA1) capable of 10 V gate-source voltage rather than driving directly from a microcontroller GPIO, which cannot source sufficient peak gate current. Verify that VDS stays below 40 V including automotive load-dump transients up to 35 V plus margin - in 12 V systems this is acceptable but in 24 V industrial systems the part must not be used.
Estimated: at VDS=20 V, ID=30 A, and switching frequency 100 kHz with OptiMOS 7 40V typical Qg ~ 50 nC, gate-drive loss is approximately 0.15 W per FET. Conduction loss at 50% duty cycle and 30 A average is roughly (RDS(on) x I_rms^2) which scales linearly with on-resistance grade. The L042 grade part will dissipate about 25% more conduction loss than the N027 grade at the same load current.
Información de cumplimiento
Automotive grade Infineon OptiMOS 7 part. RoHS and REACH compliant per Infineon product page. AEC-Q100/101 qualified for automotive applications. Lead-free and halogen-free per modern Infineon packaging standards.
