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AT27C010-70PU - 1Mb (128Kx8) OTP EPROM, 70ns, 32-PDIP | Microchip
The Microchip AT27C010-70PU is a low-power, high-performance 1,048,576-bit one-time programmable read-only memory (OTP EPROM) organized as 128K by 8 bits, with a 70 ns access time and packaged in a 32-pin PDIP (0.600 in). It operates from a single 5 V supply in normal read mode and consumes only 100 uA typical standby current, making it suitable for both battery-powered and line-powered legacy designs. An EPROM (erasable programmable read-only memory) is a non-volatile memory technology that stores bits via trapped charge on a floating-gate transistor. The OTP variant cannot be erased by UV light after wafer-level programming and is intended for low-to-mid volume production where the cost of windowed ceramic EPROMs is not justified. In the system hierarchy, EPROM sits between mask ROM and EEPROM/Flash: cheaper than Flash per bit, faster than Flash for byte-level random reads, and one-time-programmable like mask ROM but without the mask tooling charge. Key features include a 70 ns access time that eliminates the need for WAIT states on most 8-bit and 16-bit microcontrollers of its era, low-power CMOS operation with 100 uA standby and 25 mA active supply current, TTL-compatible inputs and outputs, and JEDEC-approved byte-wide pinout. Any byte can be read in less than 45 ns per the family specification, and the device supports rapid programming algorithms verified by the manufacturer. Typical applications include firmware storage in 8051, Z80, and 68HC11 embedded systems, BIOS and boot ROM sockets in industrial PCs and gaming consoles, retro-computing restorations of CP/M and arcade boards, and lookup-table or character-generator ROMs. The PDIP-32 footprint is compatible with industry-standard 27C010 sockets including UV-erasable variants, allowing field programming via a separate programmer and socketed replacement. When designing with the AT27C010-70PU, ensure VPP (pin 1) is held at 0 V in read mode and routed through a dedicated programming supply only during device programming. Add a 0.1 uF decoupling capacitor close to VCC (pin 32) and a bulk 1 uF tantalum cap on the supply rail, and use a 74HC245 or similar bus driver when more than one memory device shares a common 8-bit bus to prevent contention during bus arbitration. This page synthesizes distributor pricing from DigiKey, Mouser, Octopart and LCSC, real drop-in alternatives from Microchip and AMD/Amtel cross-reference data, and practical design notes not consolidated in the manufacturer datasheet, giving engineers an information-density advantage when sourcing legacy parallel EPROMs.
AT28C010-12JC - 1Mb Parallel EEPROM 120ns | Microchip | 32-PLCC
The Microchip Technology AT28C010-12JC is a 1-Mbit (128K x 8) parallel Electrically Erasable Programmable Read-Only Memory (EEPROM) housed in a 32-pin PLCC (Plastic Leaded Chip Carrier) package with 120 ns maximum access time. It operates from a single 5V supply and consumes 220 mW active / 0.35 mW CMOS standby, making it well suited for embedded systems, legacy industrial controllers, and military-grade storage subsystems requiring reliable non-volatile byte-write memory. A parallel EEPROM is a non-volatile memory class that allows byte- or page-level electrical erase and rewrite while preserving the fast random-access read characteristics of static RAM. Within the broader semiconductor hierarchy, the AT28C010-12JC sits as: EEPROM -> non-volatile memory (NVM) -> memory IC -> integrated circuit -> semiconductor. EEPROMs fill the niche between mask ROM (one-time programmable, lowest cost) and battery-backed SRAM (byte-write, but volatile on power loss), offering unlimited endurance cycles with no battery requirement at the cost of higher per-bit price. Key features include an internal 128-byte page register that enables simultaneous writing of up to 128 bytes with a 10 ms page-write cycle, automatic erase-before-write using on-chip latches, and built-in Data Protection (the AT28C010 requires an active-high +5V WR pulse, eliminating accidental write conditions). The device is available in commercial (0C to +70C) and industrial (-40C to +85C) temperature ranges, with military (-55C to +125C) screening on selected variants. The architecture uses a paged CMOS cell array with on-chip address and data latches driven by standard JEDEC-equivalent microprocessor bus timing; OE, CE, and WE control signals deliver SRAM-like interface simplicity. Power dissipation falls to 0.35 mW in CMOS standby, an order of magnitude below TTL-active standby, extending battery-backed retention profiles for systems that idle between writes. Typical applications include firmware program storage in legacy 8-bit MCU subsystems (8051, 68HC11), configuration parameter retention in industrial PLCs, VXI/PXI instrument calibration tables, point-of-sale (POS) terminal transaction logging, and military/aerospace equipment requiring MIL-STD-883 screening. Its wide operating temperature and paged-write architecture also suit avionics data recorders and ruggedized field instrumentation. Designers should treat PLCC pin 1 orientation carefully and observe strict Vcc decoupling near the package to avoid write-disturbance. The 32-PLCC footprint is JEDEC-standard; legacy PCBs designed around the 32-pin DIP AT28C010 can be migrated by adding a low-profile PLCC socket without any PCB rework. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
AT28C040-20BC - 4Mbit Parallel EEPROM 200ns 32-CDIP | Microchip
The Microchip Technology AT28C040-20BC is a 4-Mbit (512K x 8) parallel EEPROM memory IC delivering 200 ns access time in a 32-pin ceramic DIP (0.600 inch, 15.24 mm) windowed package, designed for non-volatile storage in legacy industrial, telecom, and embedded systems. A parallel EEPROM is a non-volatile memory device that retains data without power and is accessed via a parallel data bus (8 bits per cycle in this case). Within the broader memory taxonomy, the AT28C040 sits as a byte-alterable EEPROM, a category below flash memory in write granularity but offering superior endurance for byte-level updates and a write-cycle model that behaves like static RAM without external components. It is part of the AT28C parallel EEPROM family, predecessors of modern serial flash in most new designs but still preferred where in-system reprogrammability, byte-write flexibility, and parallel throughput are required. Key specifications include 4 Mbit density organized as 524,288 words x 8 bits, 200 ns access time, 256-byte page register for page-mode writes, 10 ms write cycle time per byte or page, 4.5 V to 5.5 V single-supply operation, and 440 mW maximum active power dissipation. The device supports read, byte-write, and page-write modes, with internal latch and software data protection mechanisms to prevent inadvertent writes. Technically, the AT28C040 employs a CMOS EEPROM cell array with on-chip high-voltage generation for the Fowler-Nordheim tunneling write process. The integrated 256-byte page register allows up to 256 bytes to be loaded and then written simultaneously, substantially accelerating bulk programming relative to byte-write EEPROMs. The -20 speed grade denotes the 200 ns access time bin, and the BC suffix identifies the 32-pin side-brazed ceramic DIP package with a transparent quartz window for in-circuit UV erasure. Typical applications include legacy industrial controllers, telecom equipment firmware storage, point-of-sale terminals, avionics instrumentation data logging, and embedded boot/program memory where parallel bus interface simplifies host integration. When designing with this part, derate access time for capacitive bus loading and place 0.1 uF decoupling capacitors near the VCC pins. The UV-erasable window allows factory re-programming, but in-system byte-writes do not require erasure. Use the JEDEC-standard 32-CDIP footprint to ensure compatibility with legacy sockets and PCBs. This page synthesizes distributor stock, parametric specifications, drop-in alternative candidates, and practical design notes beyond the datasheet itself, enabling engineers to evaluate, source, and integrate the AT28C040-20BC with confidence.
AT28C17-15PC - 16Kbit Parallel EEPROM, 150 ns, 28-PDIP | Microchip
The Microchip AT28C17-15PC is a 16 Kbit parallel Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 2,048 words by 8 bits, packaged in a 28-pin PDIP through-hole plastic DIP. The -15 speed grade denotes a 150 ns maximum read access time and operates on a single 4.5 V to 5.5 V supply compatible with standard TTL logic levels. What is a parallel EEPROM? A parallel EEPROM is a non-volatile memory device that provides byte-wide data access (typically 8 bits per read/write cycle) over a parallel bus, as opposed to serial EEPROMs (I2C/SPI/Microwire) that move data one bit at a time. Parallel EEPROMs sit in the system hierarchy as: parallel EEPROM -> non-volatile memory (NVM) -> memory IC -> integrated circuit -> semiconductor. They were widely adopted in 8-bit and 16-bit microprocessor systems before flash memory densities made serial interfaces practical for all but the smallest data sets. Key features include fast read access (150 ns), self-timed byte write cycle of 1 ms typical, internal address and data latches, an internal control timer, automatic clear-before-write, direct microprocessor control, DATA POLLING, and a READY/BUSY handshake output. The device is manufactured on Atmel's reliable nonvolatile CMOS process and supports byte-write operations without external erase cycles, simplifying firmware routines on legacy MCU platforms. From an architectural standpoint, the AT28C17 integrates charge-pump-based high-voltage generation on-chip for the floating-gate cells, eliminating the need for an external VPP programming supply. An internal control timer sequences the write cycle automatically, freeing the host CPU to perform other tasks. WRITE PROTECT (pin WP) hard-disables writes to the upper half of the array, and DATA POLLING on I/O7 lets software detect end-of-write without continuous polling of the BUSY signal. Typical applications include microcontroller-based configuration parameter storage, industrial control firmware scratchpad, point-of-sale terminal non-volatile data logs, legacy 8085/Z80/8051 system memory expansion, and instrumentation calibration tables. The 28-PDIP through-hole package makes the part especially useful for prototype boards, repair replacements for vintage equipment, and educational lab environments where socketed parts are preferred. When designing with this device, observe the 4.5 V minimum supply for reliable byte-write operation and provide proper decoupling (typically 0.1 uF) close to VCC. The READY/BUSY open-drain output requires a pull-up resistor to VCC if used with a wired-OR connection to interrupt logic or other status lines. This page synthesizes distributor pricing, parallel-EEPROM drop-in alternatives (AT28C16 family, M28C16, X28C16), and practical design notes not found in a single place on the manufacturer datasheet.
AT28C64B-15JC - 64Kbit Parallel EEPROM, 150ns, 32-PLCC | Microchip
The Microchip AT28C64B-15JC is a 64-Kbit (8,192 x 8) parallel EEPROM with 150 ns read access time, housed in a 32-pin PLCC (13.97 x 11.43 mm) package and rated for commercial temperature operation. It draws 40 mA active current while delivering 220 mW typical power dissipation, and falls back to a 100 µA CMOS standby current when deselected for low-power system designs. A parallel EEPROM is a non-volatile memory device whose I/O architecture mirrors static RAM (SRAM) for read and write cycles but retains its contents without power. Within the broader memory hierarchy, parallel EEPROMs sit between serial EEPROMs (smaller, slower, fewer pins) and NOR flash (higher density but more complex write/erase sequencing), making them ideal for legacy parallel buses, boot ROM, configuration stores, and parameter tables that demand byte-level writes without an erase step. Key features include automatic page-write operation up to 64 bytes per 10 ms cycle, software data protection (SDP) to lock out inadvertent writes, hardware write protection via the WP pin, and a standard JEDEC-compatible pinout that simplifies design-in. The device operates from a single 5 V supply and supports TTL-compatible inputs and outputs. Architecturally, the AT28C64B uses Microchip's advanced non-volatile CMOS process with on-chip latches for address, data, and control, accessed like static RAM for both read and write cycles. The internal charge pump generates the high-voltage programming supply on-chip, eliminating the external VPP required by legacy EPROMs and simplifying board layout. Typical applications include legacy industrial control firmware storage, communication equipment parameter backup, point-of-sale terminals, set-top box configuration memory, and as a direct replacement for older 27C64/2764 EPROMs in systems requiring in-system reprogrammability without UV erasure. The 32-PLCC JEDEC footprint also suits socketed designs where mechanical compatibility with through-hole PLCC sockets is required. When designing with this part, ensure VCC decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin. For reliable page-mode writes, respect the maximum 10 ms write cycle time per 64-byte page and assert WE according to the datasheet timing diagram. The WP pin should be tied to VCC or GND through a defined logic level rather than left floating. This page synthesizes distributor pricing, drop-in JEDEC-compatible alternatives, and practical design considerations not found in the manufacturer datasheet alone, giving engineers a single reference for sourcing, replacement, and board-level implementation of the AT28C64B-15JC.
AT29C040A-90TU - 4Mbit 5V Parallel Flash 90ns 32-TSOP | Microchip
The Microchip Technology AT29C040A-90TU is a 4-Mbit (512K x 8) 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM) housed in a 32-pin TSOP (Type I) package, organized as 2048 individually-erasable sectors of 256 bytes each. It supports a parallel interface with a fast 90 ns read access time, a single 4.5 V to 5.5 V supply rail, and single-cycle sector reprogram (erase + program) via internal address and data latches. A Flash memory IC is a type of non-volatile memory that retains stored data when power is removed and supports in-system electrical erasure and reprogramming. The AT29C040A belongs to the NOR Flash family — within the hierarchy non-volatile memory -> Flash memory -> NOR Flash -> parallel NOR Flash -> boot/parameter-storage Flash. NOR Flash provides random byte-level access and execute-in-place capability, which is why it is preferred over NAND for code storage in embedded systems. Key specifications include a 90 ns maximum read access time, a sector program time of approximately 10 ms per 256-byte sector, 2048 eraseable sectors, and an endurance rating of 10,000 write cycles per sector (typical). The device also features hardware and software data protection, low-power CMOS operation, and a JEDEC-standard 32-pin TSOP footprint compatible with surface-mount assembly lines. Operating current is typically 50 mA active and 100 µA standby, supporting battery-friendly embedded designs. The AT29C040A employs a sector-based architecture where any sector can be erased and reprogrammed in a single internal operation without external erasure. The on-chip state machine handles timing and verification internally, offloading complexity from the host microcontroller. Compared with byte-programmable legacy EEPROM, the 256-byte sector architecture dramatically reduces software overhead for firmware updates while still supporting parameter storage when only a few bytes change. Typical applications include embedded firmware storage for industrial controllers, automotive infotainment boot Flash, networking equipment firmware, point-of-sale terminals, and any system requiring in-system reprogrammable non-volatile memory. It is also widely used as a 5V-compatible data-logging buffer where EEPROM density is insufficient. When designing with this device, ensure VCC decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin, and respect the maximum 10 ms sector-program timing in your firmware state machine. Because it is a 5 V part, do not connect directly to a 3.3 V MCU without a level translator on the address and data lines. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in Microchip alternatives in the same 32-TSOP footprint, and practical design notes that complement the manufacturer datasheet.
AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas
The Renesas Electronics (formerly Atmel) AT45DB041D-SU is a 4-megabit serial-interface DataFlash NOR memory with SPI and RapidS modes up to 66 MHz, supplied from a single 2.7 V to 3.6 V rail and housed in an 8-pin SOIC (150 mil, EIAJ standard) package. DataFlash is a category of nonvolatile memory that organizes storage as uniform pages rather than the sectors used by conventional serial NOR flash. Within the memory hierarchy it sits AT Series in the storage IC stack as a low-pin-count alternative to parallel NOR and small NAND, ideally placed between an MCU and any removable storage. The AT45DB041D-SU has 4,325,376 bits organized as 2,048 pages of either 264 bytes (binary mode) or 256 bytes (standard mode), giving 528 KB or 512 KB depending on the configuration selected at design time. Key specifications include a RapidS serial interface compatible with SPI modes 0 and 3 at 66 MHz maximum clock frequency, single-cycle page programming, an industry-leading endurance of 100,000 program/erase cycles per page, a minimum 20-year data retention, and two independent 264-byte SRAM data buffers that allow simultaneous read/write of the host side while a page is being programmed in the background. The device also offers a 128-byte security register, page erase, block erase, and chip erase. Technically the device uses a dual-buffer architecture in which the two SRAM buffers decouple the SPI bus from internal program/erase timing, so the host can stream the next data block at full 66 MHz while the previous page programs in the background. The single 2.7 V to 3.6 V supply allows direct connection to 3.3 V MCU rails without a level shifter. Typical applications include digital voice recorders, image storage buffers in digital cameras, program code and data storage in 8/16/32-bit embedded controllers, DSP coefficient storage, and battery-powered data loggers. The dual-buffer architecture makes it especially attractive where continuous streaming is required without flow control. When designing with this device, choose either the 256-byte or 264-byte page mode at design time, since the two modes use different opcodes and configuration register settings and are not interchangeable after firmware is locked in. Use a 1 kΩ to 10 kΩ pull-up on the CS pin to avoid spurious selection during power-up. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet. Pricing referenced is as of 2026-10-06.
AT45DB041E-SHN2B-T - 4Mbit 1.65V SPI DataFlash 85MHz | Renesas
The Renesas AT45DB041E-SHN2B-T is a 4-Mbit (512K x 8) serial-interface DataFlash memory with an extra 128 kbits, operating from 1.65V to 3.6V and packaged in an 8-pin SOIC (EIAJ 208mil). It uses a three-wire SPI interface (SI, SO, SCK plus active-low CS) at up to 85 MHz clock rate, with an additional RapidS mode for higher throughput. A DataFlash is a type of NOR flash memory that combines a serial SPI interface with a dual SRAM buffer architecture. The hierarchy is: NOR flash -> serial flash -> DataFlash. DataFlash devices fill the niche between small EEPROMs and larger parallel NOR flashes, optimizing for low pin count, low voltage, and byte/ page granular access. The AT45DB041E family is widely used for code shadowing, parameter storage, and data logging in battery-powered and embedded systems. The AT45DB041E features dual SRAM buffers (256/264 bytes per page, configurable), a 4-Mbit main memory organized as 2048 pages of 256 bytes (or 2112 pages x 264 bytes), hardware and software write protection, sector erase, page program, and deep power-down with typically under 5 uA standby current. Per the manufacturer datasheet, the SPI clock can reach 85 MHz in standard mode and the device supports Page Erase, Block Erase (4 KB), and Sector Erase (64 KB) commands. Architecturally the AT45DB041E integrates an SPI controller, command decoder, write state machine, and high-voltage generation circuits on a single die, with built-in ECC on each page. The continuous read mode enables sequential access without page boundary delays, simplifying firmware code-shadow implementations where the host copies flash content into RAM at boot. Typical applications include firmware storage in IoT sensors, data logging in industrial metering, voice recorders, image storage in low-cost camera peripherals, and consumer wearables requiring small, low-power non-volatile storage. The wide 1.65 V to 3.6 V range supports both Li-ion and 3.3 V systems. When designing with this part, ensure the CS signal is properly controlled to avoid partial writes, and consider adding a small decoupling capacitor (100 nF) close to VCC. The SOIC-8 EIAJ 208mil footprint has different pin spacing than a standard 150mil SOIC-8 - verify your PCB land pattern before placing the part. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an engineer-focused decision aid for selecting the AT45DB041E in new designs.
AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
The Renesas AT45DB041E-SSHN2B-T is a 4 Mbit (4,194,304 bits) serial-interface Flash memory organized as 2,048 pages of 256 bytes (or 264 bytes in binary page mode), housed in an 8-pin SOIC-N 150 mil package supplied on tape and reel. It supports SPI modes 0 and 3 plus the RapidS high-speed variant, operating at up to 85 MHz clock frequency across a 1.65 V to 3.6 V wide Vcc range, and is specified from -40 °C to +85 °C. The part belongs to the Adesto AT45DB DataFlash family now owned and re-marketed by Renesas Electronics Corporation after its 2020 acquisition of Dialog Semiconductor's Adesto memory line. A DataFlash is a serial NOR Flash memory optimized for sequential, page-oriented access rather than random byte access. Compared with standard SPI NOR, it adds on-chip dual SRAM buffers that enable simultaneous read-while-write and erase-while-write operation, dramatically reducing processor overhead for data logging. DataFlash sits in the broader hierarchy as a sub-class of NOR Flash -> non-volatile memory -> semiconductor memory, complementary to denser but slower NAND Flash. Key features include 4 Mbit density in a 256/264-byte page architecture, dual on-chip SRAM buffers (256/264 bytes each), hardware and software write protection, an absolute write protection pin, power-on reset, and JEDEC manufacturer/device ID read-back. The 85 MHz RapidS interface enables fast boot and continuous data capture, while the wide 1.65 V to 3.6 V supply range allows direct connection to 1.8 V, 2.5 V, and 3.3 V rails without level shifters. The AT45DB041E-SSHN2B-T uses a 3-wire SPI interface (SI, SO, SCK) plus chip select, accessed through standard op-codes for page read, page program, block erase, sector erase, chip erase, and buffer read/write. Its page-erase granularity is as small as 256 bytes, much finer than the 4 KB to 64 KB sectors of competing SPI NOR parts, simplifying software wear-leveling for data-logging use cases. Typical applications include digital voice recording, image storage, firmware shadowing, IoT sensor data capture, and industrial data logging. Its wide Vcc range and small footprint also suit battery-powered wearables, smart meters, and point-of-sale terminals where the SPI host is a low-power MCU. When designing with this part, observe the Vcc decoupling requirement of 0.1 µF placed within 5 mm of the VCC pin, hold CS high during power-up until Vcc stabilizes, and avoid simultaneous buffer-1 read and buffer-2 write operations to the same page address without arbitration in firmware. This page synthesizes distributor pricing, drop-in alternatives from the same AT45DB041E family and competing SPI Flash parts, and practical design notes not collected in the manufacturer datasheet alone.
AT45DB081D-SU - 8Mbit SPI DataFlash, 66MHz, 2.7-3.6V | Renesas
The Renesas AT45DB081D-SU is an 8-megabit (1 Mbyte) serial-interface DataFlash memory organized as 4,096 pages of 256 bytes (or 264 bytes in binary mode), housed in an 8-pin SOIC (EIAJ) package. It operates from a single 2.7V to 3.6V supply and supports RapidS serial interface clock rates up to 66 MHz, with SPI modes 0 and 3. Two user-configurable page sizes (256 or 264 bytes per page) enable flexible firmware/data partitioning for embedded designs. A DataFlash is a serial NOR flash architecture optimized for high-density byte-level storage with built-in SRAM buffers and page-oriented programming. Compared with parallel NOR flash, DataFlash drastically reduces pin count (typically 8 pins versus 28-48), simplifies PCB layout, and lowers system cost. DataFlash sits within the broader hierarchy of non-volatile memory: serial flash > NOR flash > flash memory > non-volatile semiconductor memory. Its two-buffer architecture allows simultaneous read-while-write, enabling efficient logging in data-acquisition and firmware-update workflows. Key features of the AT45DB081D-SU include 4,096 page-erase sectors, single-cycle reprogram (erase + program) per page, a hardware page-size configuration lock via the binary page-size bit, deep power-down mode reducing ICC to a few microamps, and JEDEC-standard manufacturer/device ID read commands. The device supports 100,000 erase/write cycles per page minimum and a 20-year data retention guarantee. The AT45DB081D-SU uses a 264-byte SRAM buffer plus a second 264-byte buffer to enable read-while-write. Each main-memory page transfers to a buffer in 80 microseconds (typical). The RapidS SPI engine supports Mode 0 and Mode 3, allowing interoperability with most microcontrollers and DSPs without external logic. Typical applications include digital audio storage, firmware shadowing in set-top boxes and printers, data logging for industrial sensors, EFR32/SAMD MCU external program memory, and GPS/navigation waypoint storage. The wide 2.7-3.6V supply range supports both 3.3V and battery-backed 3V designs. When designing with the AT45DB081D-SU, place a 0.1 microfarad decoupling capacitor adjacent to the VCC pin and keep SPI traces short to avoid ringing above 66 MHz. Confirm that your host controller supports mode-0 SPI with a clock divider that does not exceed 66 MHz; many 8-bit MCUs require peripheral clock prescalers below 1:1. This page synthesizes distributor pricing, drop-in same-package alternatives, and PCB/design guidance not found in the manufacturer datasheet. Compared with bare Octopart/DigiKey listings, this view includes same-package alternatives that share the SOIC-8 (EIAJ) footprint and explains parametric deltas.
AT45DB321C-TC - 32Mbit SPI DataFlash, 28-TSOP | Microchip
The Microchip Technology AT45DB321C-TC is a 32-megabit (4 MB) serial-interface DataFlash memory IC supporting SPI and RapidS (4-wire SPI) modes at up to 40 MHz clock frequency, housed in a 28-pin TSOP-I package. It operates from a 2.7 V to 3.6 V single supply and delivers typical active read current below 15 mA, with standby and deep power-down modes reducing quiescent draw to microamp levels for battery-aware designs. A DataFlash is a page-oriented serial NOR-flash memory that divides the array into 8192 pages of 528 bytes (or 8192 pages of 512 bytes in binary page mode), with two SRAM buffers of 528 bytes each enabling single-clock rewrite-in-place operations. Unlike generic SPI NOR flash, DataFlash supports simultaneous read-while-write via these buffers, making it a hybrid between raw flash and small EEPROM. Architecturally it sits inside the NOR flash -> serial flash -> DataFlash hierarchy, and within power management it functions as non-volatile storage rather than a regulator. AT45DB321C refers specifically to the 32-Mbit density in the AT45DB series, which spans 2-Mbit through 128-Mbit densities. Key features include dual SRAM data buffers (528 bytes each), built-in hardware page-erase and block-erase engines, a 128-byte security register, JEDEC-standard SPI mode 0/3 support, and a RapidS mode for sustained throughput approaching byte-per-clock efficiency. The device also integrates a sequential read command that streams data with a single opcode, plus deep power-down at less than 10 uA typical. Industrial temperature grade (-40C to +85C) is offered for embedded and commercial applications. Typical applications include firmware and bootloader storage in microcontroller systems, data logging in industrial sensors, voice/audio sample storage, image storage in mid-resolution camera modules, and configuration parameter storage in networking equipment. The 528-byte page size is convenient for audio frames and small sector writes. Designers should note that the 'TC' suffix denotes the TSOP-I commercial-grade package, distinct from the lead-free 'CC' (BGA) and industrial 'TI' versions. This datasheet synthesizes distributor pricing, drop-in compatibility information, and application design notes beyond the manufacturer datasheet summary.
ATECC608A-MAHDA-T ECC Secure Authentication IC | Microchip
The Microchip ATECC608A-MAHDA-T is an ECC secure authentication IC with hardware-based key storage and cryptographic accelerators for authentication, signing, verification, and key agreement. It is configured for I2C communication and is packaged as an 8-pad, 2 x 3 x 0.6 mm thermally enhanced plastic UDFN. The device stores up to 16 keys, certificates, or miscellaneous secure data objects in its EEPROM array. A CryptoAuthentication IC is a specialized security integrated circuit used to protect cryptographic keys and perform security operations without exporting sensitive material to the host processor. The ATECC608A belongs to the Microchip CryptoAuthentication family and combines protected EEPROM with hardware cryptographic accelerators, helping designers implement secure boot, device authentication, anti-counterfeiting, and ecosystem-control functions. The verified component information identifies ECC/ECDSA/ECDHE capability, I2C interface support, and protected storage for up to 16 keys, certificates, or data objects. Hardware-supported asymmetric signing, verification, and key agreement can reduce the software burden on the host MCU while preserving cryptographic material inside the secure device. The exact operating limits, memory-map details, security-certification status, and electrical timing values require confirmation in the manufacturer datasheet. Typical uses include network and IoT endpoint security, secure boot, encrypted message handling, key generation for software downloads, anti-counterfeiting, and secure-element-based product identity. The device is especially suitable when a system needs an I2C-connected hardware security anchor for credentials, device certificates, or firmware authenticity decisions. In a design, place the UDFN close to the host controller and route I2C signals with appropriate pull-up and decoupling arrangements. Follow the manufacturer reference schematic and package land pattern, confirm clock and signal timing, and protect provisioning credentials during manufacturing. Do not assume that software migration or device replacement preserves secrets without validating the new device's provisioning and migration process. This page combines verified distributor identity, package, interface, storage, and cryptographic-use information with practical sourcing and migration context. It intentionally distinguishes confirmed facts from parameters that are not present in the supplied verified data.
ATSHA204A-MAHDA-T - SHA-256 CryptoAuthentication IC | Microchip
The Microchip Technology ATSHA204A-MAHDA-T is a hardware cryptographic authentication IC implementing the NIST-standard SHA-256 hash algorithm, with a 4.5Kb EEPROM array, an I2C/Single-Wire interface, an operating voltage range of 2 V to 4.5 V, and a temperature range of -40C to +85C, housed in an 8-pin UDFN (2x3 mm) package with exposed pad. A cryptographic authentication IC is a specialized security chip that stores secret keys in protected memory and performs challenge-response computations entirely on-chip, so secrets never appear on an external bus. Within the system hierarchy, it sits below the main processor as a security co-processor, complementing microcontrollers, memory ICs, and power management ICs in an embedded design. The ATSHA204A belongs to Microchip's CryptoAuthentication family, which the manufacturer positions as its most cost-effective hardware authentication solution. Key features include hardware SHA-256 computation, a 4.5Kb EEPROM organized as 16 zones supporting key storage, read-only data, consumption logging, and security configuration, and a flexible command set. The chip also integrates an SHA-256 HMAC/PRF engine, random number generation support, and diverse attack-protection mechanisms such as active shield overlays and key access controls defined by configuration fuses. Technically, the device is a CMOS authenticator whose command interpreter processes Authenticate, Read, Write, DeriveKey, and MAC commands. Because key storage, hashing, and comparison occur inside the die, board-level probes cannot intercept secrets, addressing the fundamental weakness of software-only authentication. The shared-bus Single-Wire mode allows multiple ATSHA204A devices on one processor pin, useful for consumable identification such as ink tanks or spare parts. Typical applications include clone prevention for spare parts and consumables, secure firmware boot authentication, secure network node identity, and consumable lifecycle tracking. The MAHDA-T variant specifically supports the I2C interface, making it a natural companion for microcontrollers and FPGA hosts. Design consideration: configure the IO interface (Single-Wire versus I2C) and zone access policies before fusing the configuration zone, as these settings are permanent and directly determine key protection strength. This page synthesizes verified distributor data, drop-in alternatives, pinout guidance, and practical design notes that are not consolidated in the manufacturer datasheet.
ATSHA204A-STUCZ-T - SHA-256 CryptoAuth IC SOT-23-3 | Microchip
The Microchip Technology ATSHA204A-STUCZ-T is a hardware cryptographic authentication IC that integrates the SHA-256 hash algorithm with 4.5Kb of EEPROM key storage, housed in a 3-pin SOT-23 (TO-236-3) surface-mount package and communicating over a single-wire interface. A cryptographic authentication IC, sometimes called a crypto element or secure authenticator, is a specialized security IC that stores secret keys in protected hardware memory and performs challenge-response computations on-chip so that secrets never leave the device. It sits within the broader hierarchy of security integrated circuits: secure authenticator, CryptoAuthentication family member, hardware security IC, semiconductor. This class of part provides a far stronger root of trust than software-only key storage in a general-purpose microcontroller. Key features include the SHA-256 hash engine, 4.5Kb EEPROM array usable for key storage, miscellaneous read/write data, read-only data, secret data, consumption logging, and security configuration, plus a compact single-wire interface that consumes minimal host-controller GPIO resources. The SOT-23-3 package minimizes PCB footprint, making the part cost-effective and space-efficient. The device implements a flexible command set for challenge-response protocols in which the host sends a random challenge, the ATSHA204A computes an HMAC-style SHA-256 digest over the challenge plus an internal secret key, and only a device holding the correct key produces the expected response. Internal security features guard against side-channel and physical attacks on stored keys. Typical applications include consumable and accessory authentication (printer cartridges, battery packs, medical consumables), networked node identification and anti-counterfeiting, and secure firmware or message checking in embedded systems. Design tip: dedicate a single host GPIO to the single-wire bus and follow the datasheet timing requirements strictly, since the one-wire protocol is timing-sensitive; verify that supply decoupling meets the datasheet recommendation. This page synthesizes distributor availability data, package and pinout guidance, and practical design notes not consolidated in the manufacturer datasheet.
CAI-NVES1T9K1V - 1.9TB E1.S NVMe Gen4 SSD | Cisco | UCS Servers
The Cisco CAI-NVES1T9K1V is a 1.9TB enterprise NVMe solid state drive in an E1.S (15 mm) form factor, built on the Kioxia XD7P high-performance, media-endurance controller platform with a PCI Express 4.0 x4 NVMe interface. It is a factory-qualified internal storage option for Cisco UCS C845A M8 AI rack servers, providing hardware-based encryption for data-at-rest protection in AI training and inference clusters. An E1.S SSD (EDSFF Short, 15 mm) is a member of the Enterprise and Data Center Standard Form Factor (EDSFF) family, an industry specification that replaces legacy 2.5-inch and M.2 drives in dense servers. E1.S sticks slide vertically into server drive bays, improving airflow, hot-swap serviceability, and per-rack storage density compared with U.2 drives. Within the storage hierarchy, the XD7P sits in the high-performance, mixed-use enterprise NVMe tier, balancing read and write endurance for demanding workloads. Key features include 1.9TB raw capacity, PCIe 4.0 NVMe connectivity for multi-GB/s throughput and low queue latency, hardware encryption, and the Kioxia XD7P controller paired with enterprise-grade NAND rated for high endurance (media endurance class). The drive is validated end-to-end by Cisco for the UCS C845A M8, including firmware, thermal, and power-management behavior under the server's EDSFF backplane. Technically, the PCIe 4.0 x4 link provides approximately 7.9 GB/s of aggregate bandwidth per drive slot, allowing the C845A M8 to scale local flash performance alongside NVIDIA GPU acceleration. The 15 mm E1.S height accommodates higher NAND die stacks and a larger heatsink surface than 9.5 mm E1.S variants, supporting sustained write performance in thermally constrained AI chassis. Typical applications include Generative AI fine-tuning and inference data staging on the UCS C845A M8, high-performance virtualization and databases, and GPU server boot plus scratch storage. When designing a storage configuration, verify the C845A M8 drive-bay population rules and ensure adequate chassis airflow, as E1.S drives throttle under sustained writes if inlet temperature limits are exceeded. This page synthesizes distributor pricing from multiple sources, lifecycle status, and application guidance not consolidated in any single datasheet.
CAT24C04YI-GT3 - 4Kb I2C Serial EEPROM, 400kHz | onsemi
The onsemi CAT24C04YI-GT3 is a 4-Kbit (512 x 8) I²C CMOS Serial EEPROM organized as 32 pages of 16 bytes each, supporting both Standard (100 kHz) and Fast (400 kHz) I²C protocols. Housed in an industrial-grade 8-pin TSSOP package, it operates from 1.8V to 5.5V with access time of 900 ns and provides 1,000,000 program/erase cycles endurance with 100-year data retention. A serial EEPROM is a non-volatile memory device accessed via a low-pin-count serial bus, used to store user-configurable parameters such as calibration data, device IDs, and configuration registers. The CAT24C04 sits in the EEPROM > non-volatile memory > memory IC > integrated circuit taxonomy, and serves as a compact, parameter-sensitive solution to embedded non-volatile storage needs. Key features include hardware write protection via the WP pin, software write protection through block-level access control, and 16-byte page write mode for efficient multi-byte programming. The device uses a self-timed write cycle and integrates noise suppression filters on the SCL/SDA inputs, eliminating the need for external RC components. It also supports hardware device address selection through the A0-A2 pins to support up to 8 devices on the same bus. The CAT24C04YI-GT3 uses CMOS technology with a 2-wire I²C serial interface compatible with industry-standard EEPROM protocols. The device addresses memory using a 2-byte address scheme with the two most significant bits embedded in the device address byte, allowing pin-to-pin compatibility with the smaller-density CAT24C02x. The wide VCC range (1.8V-5.5V) supports both 3.3V and 5V system designs without level shifting. Typical applications include consumer electronics configuration storage, industrial sensor calibration, IoT device parameter storage, white goods settings retention, smart meter data logging, and automotive infotainment non-volatile memory. The 8-pin TSSOP package is well-suited for compact PCB designs where board space is constrained. When designing with this EEPROM, ensure SDA/SCL pull-up resistors (2.2kΩ to 10kΩ depending on bus capacitance) are placed close to the bus master. Verify the total bus capacitance including all device pins remains below 400 pF for reliable Fast-mode operation at 400 kHz. This page synthesizes distributor pricing, drop-in alternatives across onsemi and competitor families, and practical design notes not found in the manufacturer datasheet.
CAT25256VI-GT3 - 256Kb SPI EEPROM, 20MHz, 8-SOIC | onsemi
The onsemi CAT25256VI-GT3 is a 256-Kbit (32K x 8) Serial CMOS EEPROM with an SPI interface, operating at clock frequencies up to 20 MHz, and housed in an 8-pin SOIC package. It integrates a 64-byte page write buffer and supports the Serial Peripheral Interface protocol alongside 3-wire variants. The device is enabled through a Chip Select (CS) input and uses clock input (SCK), data input (SI), and data output (SO) lines for synchronous serial communication. A Serial EEPROM, also known as an E2PROM or Serial Electrically Erasable Programmable Read-Only Memory, is a non-volatile memory device that communicates over a serial bus such as SPI, I2C, or Microwire. The CAT25256 belongs to the SPI-interface EEPROM category, within the broader hierarchy of EEPROM -> non-volatile memory (NVM) -> memory IC -> semiconductor. Serial EEPROMs are typically used to store small amounts of configuration, calibration, or user data that must persist across power cycles, occupying far less board area than parallel EEPROMs or flash devices. The CAT25256VI-GT3 is offered in the industry-standard 8-SOIC footprint, making it a drop-in-friendly choice for both new designs and legacy system upgrades. Key features include a 256 Kbit (32 Kbyte) memory density organized as 32,768 bytes, hardware write protection via the WP pin, and a HOLD pin that allows the host controller to pause a serial transaction without deselecting the device. The CAT25256VI-GT3 supports single supply voltages from 1.8 V to 5.5 V, with an extended operating temperature range of -40°C to +125°C suitable for industrial and automotive-grade environments. The CAT25256VI-GT3 employs CMOS technology for low-power operation, and its page-write capability allows up to 64 bytes to be written in a single internal write cycle, dramatically reducing total programming time when compared to byte-at-a-time EEPROMs. The device uses a self-timed internal write mechanism with automatic erase-before-write, and the WP pin can be used to lock the upper memory quadrant or the entire memory array. The CAT25256VI-GT3 complies with SPI modes 0 and 3 (CPOL/CPHA = 0,0 or 1,1), making it compatible with virtually any microcontroller. Typical applications include storage of user preferences in consumer appliances, configuration data in industrial controllers, calibration coefficients in sensor signal conditioning boards, and parameter storage in white goods, networking equipment, automotive modules, and any low-power embedded system. The wide 1.8 V to 5.5 V supply range also makes it ideal for battery-powered portable devices. When designing with the CAT25256VI-GT3, ensure that the WP pin logic level is defined (tie to VCC if write protection is not used) and that the HOLD pin is tied to VCC if the host will not use it. Connect a 100 nF decoupling capacitor close to the supply pin to suppress supply-induced noise. Software routines should respect the maximum 5 ms page-write cycle time before initiating the next access. This page synthesizes distributor pricing, onsemi datasheet excerpts, drop-in alternatives, and engineering design notes that go beyond the manufacturer's part-number listing.
CXDB4ABAM - 2GB LPDDR4X SDRAM 3733Mbps | CXMT
The CXDB4ABAM is a 2GB LPDDR4X SDRAM memory chip manufactured by ChangXin Memory Technologies (CXMT). It operates at a data rate of 3733 Mbps and is housed in a 200-ball FBGA package (15x10x0.8mm). This low-power double data rate memory is designed for mobile, embedded, and consumer applications requiring high bandwidth and low power consumption. LPDDR4X is a type of synchronous dynamic random-access memory (SDRAM) that is part of the LPDDR (Low Power Double Data Rate) family, which is optimized for battery-powered devices. It is a successor to LPDDR4 and offers reduced I/O voltage (0.6V) compared to LPDDR4 (1.1V), resulting in lower power consumption while maintaining similar performance. LPDDR4X is widely used in smartphones, tablets, ultra-thin laptops, and embedded systems where power efficiency is critical. Key features of the CXDB4ABAM include a 2GB density, 3733 Mbps data rate, and support for dual-channel operation. The device uses a 200-ball FBGA package with a 0.8mm ball pitch, enabling compact PCB designs. It is RoHS compliant and supports industrial temperature ranges, making it suitable for a variety of applications. The CXDB4ABAM utilizes advanced DRAM process technology to achieve high speed and low power. It supports various power-saving modes, including idle, self-refresh, and deep power-down, which are essential for extending battery life in portable devices. The memory interface is compatible with standard LPDDR4X controllers, simplifying integration into SoC designs. Typical applications include smartphones, tablets, embedded computing, AI edge devices, and automotive infotainment systems. The high bandwidth and low power make it ideal for applications requiring fast data processing and long battery life. When designing with the CXDB4ABAM, ensure proper decoupling and signal integrity practices are followed. The 0.6V I/O voltage requires careful PCB layout to minimize noise and maintain signal integrity at high data rates.
CXDB4ABAM-MK - 8Gb LPDDR4X SDRAM 3733MHz | CXMT
The CXDB4ABAM-MK is a high-performance LPDDR4X SDRAM memory chip manufactured by ChangXin Memory Technologies (CXMT). It operates at a data rate of 3733 MHz, delivering high-speed data transfer for mobile and computing applications. The device is housed in a 200-ball FBGA package (BGA-200, 15x10x0.8 mm), which supports high-density PCB designs with efficient thermal performance. As an LPDDR4X device, it offers low power consumption, making it ideal for battery-powered devices. LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) designed for mobile and embedded systems. It is an evolution of LPDDR4, offering higher data rates and lower power consumption through reduced I/O voltage (0.6V). LPDDR4X is part of the broader DRAM memory hierarchy, which includes DDR4, DDR5, and LPDDR5, and is specifically optimized for power-sensitive applications such as smartphones, tablets, and IoT devices. Key features of the CXDB4ABAM-MK include a 3733 MHz data rate, 8Gb density, and support for dual-channel operation. The device operates from a 1.8V VDD1 and 1.1V VDD2 power supply, with a VDDQ of 0.6V for the I/O, reducing power consumption by up to 20% compared to LPDDR4. It supports various operating modes including active, standby, and deep power-down, enabling efficient power management. The package is RoHS compliant, meeting environmental standards. The CXDB4ABAM-MK utilizes advanced process technology to achieve high speed and low power. It features on-die termination (ODT) for improved signal integrity and supports a 16n prefetch architecture, which enhances data throughput. The device includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across a wide temperature range. The 200-ball FBGA package provides excellent thermal dissipation and is suitable for space-constrained designs. Typical applications include smartphones, tablets, set-top boxes, and IoT devices. In smartphones, the high data rate enables smooth multitasking and immersive VR experiences. In set-top boxes, it supports high-definition video streaming and fast app loading. The low power consumption extends battery life in portable devices. When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable power supply and careful PCB layout to maintain signal integrity at 3733 MHz. Refer to the datasheet for detailed layout guidelines.
CXDB5CCAM-MK - LPDDR4X SDRAM 8Gb | CXMT | Mobile & AI
The CXDB5CCAM-MK is a high-performance LPDDR4X SDRAM manufactured by ChangXin Memory Technologies (CXMT), designed for mobile, embedded, and AI applications requiring high bandwidth and low power consumption. It features a 200-ball BGA package (BGA200) and operates over a temperature range of -25°C to +85°C, making it suitable for a wide variety of consumer and industrial devices. LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) optimized for low power consumption and high data rates, commonly used in smartphones, tablets, and embedded systems. It is part of the LPDDR memory family, which evolved from DDR to provide reduced voltage and power for mobile applications. LPDDR4X operates at a lower I/O voltage (0.6V) compared to LPDDR4 (1.1V), enabling significant power savings while maintaining high bandwidth. Key features of the CXDB5CCAM-MK include support for asynchronous reset, data mask function, and ZQ calibration, which are essential for reliable memory operation. The device is RoHS compliant, ensuring environmental safety. The BGA200 package offers a compact footprint suitable for space-constrained designs, and the -25°C to +85°C operating temperature range supports both commercial and industrial applications. Technically, the CXDB5CCAM-MK is a 8Gb (gigabit) LPDDR4X device, organized as 512M x 16, providing a 16-bit data bus. It supports data rates up to 4266 Mbps, delivering high bandwidth for demanding applications. The memory uses a 1.1V core voltage and 0.6V I/O voltage, reducing power consumption by up to 40% compared to LPDDR4. The device includes on-die ECC and supports deep power-down mode for extended battery life. Typical applications include smartphones, tablets, AI edge devices, and automotive infotainment systems. The CXDB5CCAM-MK is also used in Rockchip RK3588S-based systems, where it provides the necessary memory bandwidth for high-resolution displays and AI processing. Its low power consumption makes it ideal for battery-powered devices. When designing with this memory, ensure proper PCB layout for high-speed signals, including impedance matching and minimal trace lengths. Use the ZQ calibration feature to optimize signal integrity. The device supports a wide range of operating conditions, but careful attention to power supply decoupling is recommended to maintain stable operation.
CY14101V - 1-Mbit Quad SPI nvSRAM | Infineon | Non-Volatile SRAM
The Infineon CY14101V is a 1-Mbit non-volatile SRAM (nvSRAM) memory IC organized as 128K words x 8 bits, accessed through a high-speed Quad SPI (QPI) interface. According to the Infineon datasheet for the CY14V101QS family, this device combines a standard SRAM array with on-chip non-volatile storage cells that automatically save data on power loss, eliminating the need for backup batteries while sustaining full SRAM read/write performance. A Non-Volatile SRAM (nvSRAM) is a hybrid memory class that pairs a conventional SRAM cell array with a parallel non-volatile store (typically a SONOS or ferroelectric process) under the same die. On power-down the SRAM contents are autonomously recalled into the nvSTORE; on power-up they are restored to the SRAM cells, giving the engineer 'battery-free NVRAM' behavior. Within the broader taxonomy, nvSRAM sits between SRAM (volatile, fast, unlimited writes) and EEPROM/flash (non-volatile, slow write, page/block erase, limited endurance), giving nvSRAM byte-level writes at SRAM speeds with infinite endurance for the volatile side and >1 million STORE cycles for the non-volatile side. The CY14101V supports Single, Dual, and Quad SPI transfer modes, allowing up to four bits per clock cycle in Quad mode. The device operates as an SPI slave, with chip select (/CS), serial clock (SCK), and four I/O pins (IO0-IO3) for data transfer, plus a /HOLD pin for pausing serial communication. It is enabled through chip-select assertion and accessed using standard SPI opcodes including READ, WRITE, and status register commands. In typical operation the CY14101V delivers zero-cycle latency reads and writes up to 40 MHz in single/dual/quad modes, with optional 108-MHz operations introducing cycle latency on reads. The device includes a STORE-on-power-down watchdog, automatic RECALL on power-up, and an industry-standard 16-pin SOIC or 24-ball BGA footprint option across family variants. The CMOS process provides low standby current and unlimited read/write endurance for the SRAM array. Typical applications include data logging in industrial controllers, parameter retention in metering equipment, event capture in point-of-sale terminals, configuration storage in networking gear, and fail-safe scratchpad memory in medical instruments. The Quad SPI bus also suits high-throughput FPGA and DSP boot/log buffers where fast restore-after-reset is required. When designing with the CY14101V, ensure decoupling caps are placed within 5 mm of VDD with a low-ESR 0.1 uF parallel to a 4.7 uF bulk cap. The /HOLD and /WP pins must be tied to VIO (or driven by the host) to avoid unintended interruption of SPI operation. Verify that host SPI controller supports 1-, 2- and 4-bit modes required to leverage the full Quad throughput. This page synthesizes Infineon datasheet parameters, equivalent-drop-in alternative mapping across the CY14V101 family, and practical design notes not collated in the manufacturer datasheet alone.
CY14B101J2-SXI - 1Mbit I2C nvSRAM 3.4MHz 8-SOIC | Infineon
The Infineon CY14B101J2-SXI (originally Cypress Semiconductor) is a 1-Mbit serial nvSRAM non-volatile memory IC with 128K x 8 organization, a 3.4 MHz I2C interface, and 20-year data retention, housed in an 8-pin SOIC package. An nvSRAM (non-volatile static random access memory) is a hybrid memory device that combines the fast, unlimited-endurance read/write behavior of SRAM with the non-volatility of EEPROM or Flash. In the memory hierarchy, it sits between pure SRAM (volatile, fastest) and non-volatile technologies (EEPROM, FRAM, Flash), offering byte-wide SRAM access backed by automatic non-volatile store operations. This makes nvSRAM a power-management IC companion component in systems that must preserve state across power loss without the slow write cycles and limited endurance of EEPROM. Key features of the CY14B101J2-SXI include a 1-Mbit (128K x 8) array density, a standard two-wire I2C serial interface clocked at up to 3.4 MHz in high-speed mode, and guaranteed 20-year non-volatile data retention. Writes to the SRAM cell occur at SRAM speed with effectively unlimited endurance, while non-volatile store operations are software or hardware triggered using an external VCAP capacitor for energy harvesting during STORE. Architecturally, the device integrates a static RAM array with a non-volatile quantum-trap storage element per cell. During a STORE operation, data is transferred from the SRAM array into the non-volatile cells using energy drawn from the external VCAP capacitor, so the operation completes even if VCC has already been lost. On power-up, a RECALL operation automatically restores SRAM contents from the non-volatile array. Typical applications include industrial data loggers, metering systems, network equipment configuration storage, point-of-sale terminals, and robotic or factory-automation controllers where frequent state saving and instant power-loss protection are required. The I2C interface minimizes pin count, board area, and controller GPIO usage. When designing with this device, allocate board space for the external VCAP capacitor and follow the datasheet layout guidance; omitting or undersizing VCAP compromises STORE reliability. Also observe I2C bus pull-up sizing for 3.4 MHz high-speed operation. This page synthesizes verified distributor data, lifecycle information, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, giving engineers a single citable reference for selection and sourcing decisions.
CY14B101J2-SXIT - 1Mb I2C nvSRAM, 3.4MHz SOIC-16 | Infineon
The Infineon CY14B101J2-SXIT is a 1-Mbit (128K x 8) serial I2C nvSRAM (non-volatile SRAM) memory IC operating at 3.0V core with 3.4 MHz I2C clock frequency, housed in a 16-pin SOIC (0.300 inch, MO-119) surface-mount package originally developed by Cypress Semiconductor and now part of Infineon Technologies. nvSRAM is a class of non-volatile RAM that combines the fast, unlimited read/write behavior of SRAM with the non-volatility of EEPROM or Flash. The device hierarchy places nvSRAM under non-volatile memory, which in turn sits under memory ICs and semiconductor devices. Unlike EEPROM, which requires slow erase/write cycles with limited endurance, nvSRAM stores data in a conventional SRAM cell and automatically transfers (STOREs) it to a non-volatile quantum-trap storage element on power failure, command, or brown-out, achieving effectively infinite SRAM read and write cycles. Key features include 1-Mbit density organized as 128K words of 8 bits, a standard two-wire I2C serial interface operating up to 3.4 MHz, infinite read, write, and RECALL cycles, and automatic STORE on power loss with data retention specified for 20 years. These specifications make the device suitable for write-intensive data logging where EEPROM endurance would be a bottleneck. Technically, the nvSRAM architecture pairs each SRAM cell with a non-volatile capture element; the part handles STORE and RECALL internally, including thermal management of the store operation, requiring an external reservoir capacitor (VCAP) to power the store during power failure. The I2C interface simplifies board routing to just two signal lines (SDA, SCL) plus power and ground. Typical applications include industrial data loggers, metering equipment, network switches storing configuration tables, and point-of-sale or POS terminals requiring frequent writes to non-volatile memory. The -40C to +85C industrial temperature range supports harsh deployments. Design consideration: always size and specify the VCAP reservoir capacitor per the manufacturer datasheet; an undersized capacitor risks data loss during STORE on power-down. This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes beyond the raw datasheet.
CY14B101KA-SP25XIT - 1Mbit nvSRAM 25ns with RTC | Infineon
The Infineon (Cypress Semiconductor) CY14B101KA-SP25XIT is a 1-Mbit non-volatile static RAM (nvSRAM) organized as 128K x 8 with an integrated real-time clock (RTC), delivering a fast 25 ns access time on a 2.7V to 3.6V supply in a 48-pin SSOP surface-mount package. An nvSRAM (non-volatile SRAM) is a memory device that combines the infinite read/write endurance and fast random access of static RAM with the non-volatility of EEPROM or Flash. In the memory hierarchy, it sits between SRAM (volatile, fast) and Flash/EEPROM (slow writes, limited endurance). Cypress QuantumTrap nvSRAM stores an automatic copy (AutoStore) of the SRAM contents into non-volatile QuantumTrap cells on power loss, requiring no external capacitor for store operations in this family, and restoring data on power-up. Key features include the 25 ns parallel SRAM access time, unlimited SRAM read/write endurance, 20-year non-volatile data retention, and a full-featured RTC with alarm and a backup power capability. The monolithic integration of nvSRAM plus RTC eliminates a separate RTC chip and battery-backed SRAM module, reducing board area and failure points. Architecturally, the device merges a fast SRAM core with QuantumTrap nonvolatile elements; data resides in SRAM during normal operation while a nonvolatile shadow copy is maintained or committed via store events (hardware, software, or AutoStore on power-down). Write protection and hardware store (HSB) pins support safe power-fail management. Typical applications include industrial data loggers, PLCs and factory automation controllers, network equipment configuration storage, metering systems, and avionics/medical equipment requiring fast non-volatile scratchpad memory plus accurate timekeeping. Design consideration: guarantee the supply sequencing and observe the minimum VCC detect thresholds so AutoStore completes during brown-out; ensure the HSB pin is properly pulled up per the manufacturer datasheet. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.