Controladores de MOSFET de potencia
Productos (714)
IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR25606STRPBF is a 600V half-bridge gate driver IC housed in an 8-pin SOIC package, featuring integrated shoot-through protection for IGBT and MOSFET half-bridge configurations. The device delivers typical 200 mA source and 350 mA sink gate-drive currents and operates from a 10 V to 20 V VCC supply with logic-level inputs compatible with 3.3 V and 5 V microcontrollers. Its high-voltage level-shift technology tolerates up to 600 V on the high-side bootstrap return, enabling direct drive of N-channel power switches in offline and three-phase inverter topologies. A half-bridge gate driver IC is a specialized power-management semiconductor that controls the high-side and low-side switches in a switching half-bridge. These drivers sit hierarchically between gate drivers, MOSFET/IGBT drivers, power management ICs, and semiconductors, translating low-power PWM logic signals into the high-current gate-drive waveforms required to switch high-voltage power devices efficiently and reliably. Key features include integrated dead-time control that prevents cross-conduction, under-voltage lockout (UVLO) on both VCC and VB supplies, and matched propagation delays that simplify high-frequency PWM operation. The non-inverting input logic and single PWM input minimize firmware overhead. Combined, these features reduce BOM count by replacing discrete bootstrap diode and drive circuits with a single 8-pin IC. The IR25606STRPBF uses Infineon's proprietary HVIC technology with latch-immune CMOS construction, providing ±2 kV HBM ESD tolerance and dV/dt immunity exceeding 50 V/ns. Internal shoot-through protection logic ensures that the high-side and low-side outputs cannot be simultaneously active, preventing catastrophic bridge short-circuits even under fault conditions or noisy input transitions. Typical applications include switched-mode power supplies (SMPS), motor drive inverters for fans and pumps, electronic ballasts for HID and fluorescent lighting, and Class D audio amplifiers. The 600 V rating comfortably covers universal-input PFC front ends and 480 V industrial bus voltages when proper PCB clearance is observed. When designing with this driver, select the bootstrap capacitor to supply at least 10x the gate charge of the high-side MOSFET per switching cycle, and place a 100 V ultrafast diode between VCC and VB to recharge the bootstrap. Always respect the minimum and maximum supply-voltage limits to avoid UVLO misbehavior or HVIC overstress. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR4427PBF - Dual Low-Side Gate Driver, 2.3A/3.3A, 20V, DIP-8 | Infineon
The Infineon IR4427PBF is a dual low-side gate driver IC that delivers 2.3 A source and 3.3 A sink current from an 8-pin PDIP (through-hole) package. Per the Infineon datasheet, it operates from a gate-drive supply of 6 V to 20 V, swings 1.5 A continuous output per channel, and switches in 85 ns (ton) / 65 ns (toff) typical. The IR4427 is part of the IR4426/IR4427/IR4428 family of low-voltage, high-speed power MOSFET and IGBT drivers. A low-side gate driver is a power-management IC that translates low-current logic-level control signals (e.g. 3.3 V or 5 V from a microcontroller or PWM controller) into the high-current gate charge and discharge pulses required to switch a power MOSFET or IGBT. The driver sits between the controller and the power switch's source-referenced gate, providing a low-impedance push-pull output stage capable of sourcing/sinking amperes in tens of nanoseconds. In the broader taxonomy, gate drivers belong to Power Management > Gate/Drivers > MOSFET/IGBT Drivers, sitting between signal-level control logic and the high-power switching stage. Key features of the IR4427PBF include CMOS Schmitt-triggered inputs that are compatible with standard CMOS or LSTTL outputs, matched propagation delay between both channels (ensuring symmetric timing in half-bridge or dual-switch topologies), and a high-pulse-current buffer stage designed for minimum driver cross-conduction. Its non-inverting logic (outputs in phase with inputs) makes it suitable as a direct MOSFET/IGBT gate driver without software inversion. Architecturally, the IR4427 uses proprietary latch-immune CMOS technology for ruggedized monolithic construction, with separate input logic, level-shifting, and high-current output buffer stages on a single die. The matched propagation delay (~85 ns typical) ensures both channels switch within nanoseconds of each other, which is critical for synchronous rectifiers, half-bridges, and Class-D amplifiers where timing mismatch causes shoot-through or distortion. Typical applications include DC-DC converters using synchronous rectifiers, motor drive H-bridge low-side switches, solenoid and relay drivers, electronic ballasts, and Class-D audio amplifier output stages. The 20 V abs-max gate supply makes it compatible with standard 12 V MOSFET gate drive as well as higher-voltage IGBTs. When designing with this part, note that the PDIP-8 package has limited thermal dissipation (~100 C/W theta_JA) and the absolute maximum VCC is 20 V. Decoupling VCC with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin is essential; high di/dt gate currents create voltage spikes that can trigger latch-up without proper bypassing. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, application circuits, and design considerations not consolidated in the manufacturer datasheet, helping engineers select and qualify the IR4427PBF for new designs or as a second-source on existing layouts.
IRS10752LTRPBF - 100V High-Side Gate Driver 0.24A SOT-23-6
The Infineon IRS10752LTRPBF is a 100V single-channel high-side gate driver IC housed in a 6-lead PG-SOT23 surface-mount package. It delivers typical 0.16A source and 0.24A sink drive currents, with integrated 100V blocking voltage and level-shifting that allows the gate to be tied directly to the drain of the switching transistor. A high-side gate driver is a specialized power-management IC that translates a low-side logic-level PWM signal into a floating high-side drive referenced to the switching node. These drivers sit in the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. They are essential building blocks in switched-mode power supplies (SMPS), motor drives, and any topology that requires controlling the upper FET of a half-bridge without a bootstrap or isolated supply. Infineon's microHVIC family, of which the IRS10752L is a member, integrates level shifting, a gate drive stage, and protection in a tiny SOT-23-6 package that previously required discrete bootstrap circuits. Key specifications include a 100V maximum offset voltage, 0.16A typical source current and 0.24A typical sink current, VCC range from 10V to 20V, and a propagation delay below 200ns. The non-inverting single-input logic with internal pull-down ensures the FET stays off when the input floats. The SOT-23-6 package offers a low-profile solution for space-constrained designs, and the -TRPBF suffix indicates lead-free (Pb-free) tape-and-reel packaging compliant with RoHS. Architecture-wise, the IRS10752L uses Infineon's proprietary HVIC process that combines a high-voltage level-shift cell with a low-voltage CMOS logic interface and a complementary push-pull output stage. The integrated 100V blocking transistor eliminates the need for external bootstrap diodes in low-side referenced applications, while the matched source/sink impedances minimize shoot-through risk when driving complementary pairs. Typical applications include low-power DC-DC converters, LED drivers, auxiliary supplies in white goods, solenoid and relay drivers, and small motor pre-drivers. The wide 10-20V VCC range supports both 12V bus systems and standard 15V gate drive rails. Designers also use the IRS10752L as a discrete high-side switch or in place of a P-channel MOSFET when a logic-level high-side switch is required. When laying out the IRS10752L, keep the high-voltage loop (VB-VS) area minimal to limit ringing, and place the VCC bypass capacitor within 3mm of the VCC pin. The exposed lead frame pad of the SOT-23-6 should be soldered to a small copper island to provide thermal relief at high switching frequencies. Unlike a bootstrap-based driver, the IRS10752L does not require a refresh pulse below 100% duty cycle, making it suitable for 100% ON applications such as high-side load switches.
IRS2004STRPBF - 200V Half-Bridge Gate Driver SOIC-8 | Infineon
The Infineon IRS2004STRPBF is a 200 V half-bridge gate driver IC with shutdown input, typical 0.29 A source and 0.6 A sink output drive currents, packaged in an 8-Lead SOIC. It is designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations, with high-voltage floating channel bootstrap operation to +200 V and a logic-compatible input section. The IRS2004 family targets low- to medium-power switching applications where a compact driver replaces discrete high-side drive circuitry. A half-bridge gate driver is a power-management IC that converts low-voltage PWM logic signals into the high-current, level-shifted gate-drive waveforms needed to switch the high-side and low-side MOSFETs/IGBTs of a switching half-bridge. Within the broader taxonomy, it sits inside PMIC (Power Management IC) -> Gate Driver -> Half-Bridge/MOSFET Driver, and the IRS2004 family is part of Infineon's high-voltage HVIC (high-voltage integrated circuit) portfolio, using proprietary latch-immune CMOS and junction-isolation technology to withstand negative Vs transients on the switching node. Key features include a 10 V to 20 V gate-drive supply range, 3.3 V/5 V logic-compatible input, built-in shutdown pin, undervoltage lockout for both channels, matched propagation delay for high-frequency operation, and dV/dt immunity. The 200 V rating covers 120/170 V bus rails typical in small motor drives, DC-DC converters, and lighting ballasts. The driver delivers typical 0.29 A source / 0.6 A sink currents, sufficient for gate charges typical of MOSFETs in the hundreds of nC. The shutdown input allows the host MCU to disable the output stage, enabling fault handling and low-quiescent standby modes. Typical applications include low-power BLDC motor drives for fans and pumps, single-phase and small three-phase inverters, Class-D audio amplifiers, electronic ballasts for HID/LED lighting, and auxiliary SMPS half-bridges. When designing with the IRS2004, the bootstrap diode and capacitor must be sized for the worst-case high-side duty cycle, and the logic ground (VSS) must remain at a stable low-impedance reference distinct from the power-stage return. This page synthesizes distributor pricing, drop-in same-package alternatives, and design notes that complement the manufacturer datasheet for engineers evaluating or sourcing the IRS2004STRPBF.
IRS2005MTRPBF - 200V Half-Bridge Gate Driver | Infineon
The Infineon IRS2005MTRPBF is a 200V half-bridge gate driver IC delivering 0.29A source and 0.6A sink currents, housed in a 14-pin MLPQ (4x4) exposed-pad package. This EiceDRIVER-class high-side and low-side gate driver is engineered for IGBT and MOSFET half-bridge topologies in industrial and consumer motor control, switching power supply, and lighting applications. What is a half-bridge gate driver? A gate driver is a power amplifier that translates low-power control signals from a microcontroller or PWM controller into the high-current, high-voltage drive signals required to switch power transistors (MOSFETs, IGBTs, GaN HEMTs). In the half-bridge topology, two transistors form a series connection between a DC bus and ground, and the gate driver controls both the high-side and low-side transistors with proper dead-time and level shifting. The high-side drive demands a bootstrap supply architecture, and the driver IC handles this internally to provide a floating high-side return. Key features of the IRS2005MTRPBF include VCC and VBS under-voltage lockout (UVLO) for safe startup, a typical 0.29A source current capable of driving small IGBTs and MOSFETs, and 0.6A sink current for fast turn-off. The 200V voltage rating supports 120V AC-rectified bus voltages commonly found in offline motor drives and induction cookers. The non-inverting input logic simplifies microcontroller interface design. Architecturally, the IRS2005MTRPBF integrates a level shifter, bootstrap diode for the high-side supply, gate drive buffers for both outputs, and independent UVLO comparators for VCC (low-side supply) and VBS (high-side bootstrap supply). The exposed thermal pad of the MLPQ-14 package provides a low thermal resistance path to PCB copper. Typical applications include variable-frequency drives (VFD), HVAC motor controllers, industrial fans and pumps, half-bridge and full-bridge converters, electronic ballasts for HID and fluorescent lighting, induction heating, and Class D audio amplifiers. The 200V rating is well matched to 120VAC single-phase rectified buses. When designing with this part, place the bootstrap capacitor (typically 1uF ceramic) close to the VB and VS pins, and ensure the high-side return (VS) is connected directly to the source of the high-side MOSFET. The exposed pad must be soldered to a sufficient copper pour for thermal dissipation, especially at higher switching frequencies. This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes for half-bridge gate driver applications not found in the manufacturer datasheet alone.
IRS2005STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2005STRPBF is a 200 V high-side and low-side gate driver IC housed in an 8-pin SOIC package, designed using Infineon's proprietary HVIC and latch-immune CMOS technologies. The device integrates independent high-side and low-side output channels capable of sourcing 0.29 A and sinking 0.6 A typical drive currents, making it suitable for driving power MOSFETs and IGBTs in half-bridge configurations. A gate driver IC is a power management semiconductor that translates low-power logic-level PWM signals (typically 3.3 V or 5 V from a microcontroller or DSP) into high-current drive signals capable of rapidly charging and discharging the gate capacitance of a power switch. Within the broader system hierarchy, gate drivers sit between the control IC and the power stage, falling under the category of driver ICs, then power management ICs, then power semiconductors. The IRS2005STRPBF belongs to Infineon's EiceDRIVER family and adds rugged monolithic construction with integrated VCC and VBS undervoltage lockout (UVLO) to ensure safe startup in noisy power environments. Key features include 200 V maximum offset voltage tolerance on the high-side channel, integrated deadtime control, matched propagation delay between channels for low distortion, and logic-level inputs compatible with 3.3 V and 5 V microcontrollers. The 8-SOIC footprint occupies only 3.90 mm of board width, enabling compact motor-drive and SMPS layouts. Logic inputs are Schmitt-triggered to reject noise in industrial environments, and the device operates across the -40 °C to +125 °C industrial temperature range. The IRS2005STRPBF uses a floating high-side channel with a bootstrap capacitor technique, allowing the high-side switch to be driven up to 200 V above the switching node. Internal level shifters translate the low-side logic command across the high-voltage domain without requiring an isolated supply. The monolithic HVIC construction eliminates the optocoupler or pulse transformer typically required for galvanic isolation in half-bridge stages, reducing BOM cost and PCB area. Typical applications include low-power motor drives for BLDC fans and pumps, half-bridge and full-bridge converters in offline SMPS, solar micro-inverters, induction cooker power stages, and Class D audio amplifiers. The wide 200 V rating covers 120 V rectified AC bus voltages with substantial margin. When designing with the IRS2005STRPBF, ensure the bootstrap capacitor (typically 0.1 µF to 1 µF ceramic) is sized to supply the high-side quiescent current plus gate charge during the entire high-side on-time, otherwise high-side UVLO can trip. Keep the LO and HO output traces short and wide to minimize parasitic inductance, which otherwise produces ringing and possible double-pulsing of the driven MOSFETs. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical bootstrap/PCB layout design notes not consolidated in a single location on the manufacturer datasheet.
IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2008STRPBF is a 200 V half-bridge gate driver IC with shutdown input and VCC/VBS under-voltage lockout (UVLO), housed in an 8-pin SOIC (SOIC N) surface-mount package and shipped on Tape & Reel. Typical source/sink drive strengths are 0.29 A source and 0.6 A sink, supporting direct gate drive of MOSFETs in low- to mid-power switching stages. The part is qualified for input rail voltages up to 200 V and includes a TTL/CMOS-compatible logic input plus a dedicated shutdown pin for asynchronous turn-off. The non-inverting input stage is intended for use with standard 3.3 V / 5 V microcontrollers and DSPs, and the matching high-side/low-side channel pair drives one half of a full H-bridge topology or two independent N-channel MOSFETs in a synchronous buck/boost converter. A half-bridge gate driver is a power management IC that generates two complementary gate signals referenced to a floating high-side return, allowing a low-side N-channel MOSFET and a high-side N-channel MOSFET to be driven from the same logic signal. In the hierarchy of semiconductor products, it sits under gate drivers -> driver ICs -> power management ICs -> semiconductors. The IRS2008STRPBF belongs to Infineon's EiceDRIVER family of level-shifting gate driver ICs, biased by a single VCC supply and a bootstrap diode/capacitor network that derives the high-side drive rail (VBS). VCC and VBS UVLO guarantee reliable startup by preventing the power MOSFETs from being driven into their linear region when the supply rails are below the gate-threshold-safe voltage window. Key features include 200 V maximum offset voltage tolerance on the high-side channel, matched propagation delay between high-side and low-side outputs to prevent transformer-style DC-bias errors, and a shutdown pin that latches both outputs low to support fault handling and safe board-level sequencing. The 8-pin SOIC package exposes a thermal pad-adjacent die that dissipates gate-charge losses from the driven MOSFETs, and the -STR suffix designates 100% matte-tin lead-free plating compatible with lead-free reflow profiles. Typical applications include appliance motor drives, fan/blower controllers, low-power Class D audio stages, half-bridge DC/DC converters, e-bike controllers, and small industrial inverters. The part is also commonly used to replace discrete bootstrap-driver circuits where PCB area, BOM count, or reliability concerns drive the move to an integrated driver. When designing with the IRS2008STRPBF, observe the VBS bootstrap capacitor value recommended in the datasheet typical application circuit and choose a low-ESR ceramic with at least 50 V rating. Place the bootstrap diode close to the BST and PH pins and minimise the gate-loop area to keep ringing below the MOSFET VGS(max) rating. This page combines distributor pricing tiers, drop-in pin-compatible alternatives and practical design notes not typically found in the manufacturer datasheet, providing a single reference for sourcing and validation decisions.
IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2011STRPBF is a 200 V high-side and low-side gate driver IC delivering typical 1 A source and 1 A sink currents in an 8-pin SOIC (DSO-8) package for IGBTs and MOSFETs. Per the manufacturer datasheet, it is a high power, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels whose logic inputs are compatible with standard CMOS or LSTTL output down to 3.3 V logic. The floating channel is designed for bootstrap operation and is fully operational to +200 V with negative transient voltage tolerance and dV/dt immunity. A half-bridge gate driver IC is a power management semiconductor that translates low-power PWM logic signals from a controller into the high-current, level-shifted drive required to switch the high-side and low-side power switches of a half-bridge or full-bridge stage. In the broader taxonomy it belongs to gate drivers -> MOSFET/IGBT drivers -> power management ICs -> integrated circuits. The IRS2011STRPBF integrates a bootstrap diode and level shifter on chip, allowing a single supply rail to drive both the high-side switch referenced to the switching node and the low-side switch referenced to ground. Key features include 200 V maximum offset voltage on the high-side channel, 1 A typical source and sink drive current, 60 ns typical propagation delay, and 20 ns maximum delay matching between channels for tight dead-time control. The IRS2011STRPBF provides independent CMOS/LSTTL-compatible inputs with hysteresis, a single VCC supply, and built-in shoot-through protection logic that enforces minimum dead time. The device accepts inputs down to 3.3 V, allowing direct connection to modern microcontrollers and DSPs without level shifters. Architecturally, the IRS2011STRPBF uses a high-voltage floating N-channel MOSFET level-shift driver for the high-side output and a ground-referenced push-pull output stage for the low-side. This monolithic approach minimises propagation delay asymmetry - critical for half-bridge switching where channel mismatch translates directly into dead-time error and shoot-through risk. The negative transient voltage tolerance protects against ringing caused by stray inductance when the high-side switch turns off. Typical applications include motor drives, SMPS half-bridge and full-bridge converters, electronic ballasts for HID and fluorescent lighting, and induction heating inverters. For three-phase inverter stages, three IRS2011STRPBF devices drive the six IGBTs of a variable-frequency drive or solar inverter. The wide 200 V rating suits 120/230 V rectified bus designs. When designing with the IRS2011STRPBF, pay particular attention to bootstrap capacitor selection - the capacitor must supply the high-side drive current during the high-side on-time and recharge through the internal bootstrap diode during the low-side on-time. Insufficient capacitance causes high-side UVLO and partial turn-on. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
IRS20124SPBF - 200V 1.2A Class-D Audio Driver | Infineon
The Infineon IRS20124SPBF is a high-voltage, high-speed power MOSFET gate driver for Class-D audio amplifiers, with a 200 V rating, 10 V to 18 V supply range, 1.2 A output capability, and a 14-pin SOIC package. It drives one high-side and one low-side discrete N-channel MOSFET in a half-bridge configuration. A power MOSFET driver is an interface IC that translates low-power control signals into high-current gate-drive pulses for external switching transistors. Within the hierarchy of semiconductor solutions, IRS20124SPBF belongs to the gate-driver family, the power-MOSFET-driver subcategory of power management ICs, and the broader discrete-semiconductor interface category. Its purpose is to improve switching control while keeping the high-voltage and high-current switching stage physically separate from the controller. The device provides integrated dead-time generation and bidirectional over-current sensing to simplify Class-D output-stage design. Its 60 ns propagation delay supports rapid switching, while the 200 V high-side rating permits higher bus voltages than conventional low-voltage audio drivers. The 14-pin SOIC-14 package offers gull-wing leads and is suitable for conventional surface-mount assembly. Technically, the driver uses separate high-side and low-side outputs to operate the external MOSFETs in a half bridge. Integrated dead-time prevents both devices from conducting simultaneously, while over-current detection can support protection of the power stage. The verified distributor data identifies the part as a one-channel, 14-SOIC audio driver and classifies it under gate drivers or audio special-purpose ICs. Typical applications include Class-D stereo amplifiers, compact consumer loudspeaker systems, powered speakers, and automotive-style high-voltage audio stages. In a half-bridge topology, IRS20124SPBF drives two external MOSFETs from a modulation controller, reducing controller-side gate-current burden and helping achieve clean, efficient power amplification. The main design consideration is ensuring adequate gate-drive voltage, dead time, and fault-response behavior for the selected MOSFETs. The 10 V to 18 V supply requirement, 200 V voltage rating, 1.2 A output current, and integrated protection functions should be checked against the amplifier’s bus voltage, switching frequency, power-stage layout, and thermal conditions before production release.
IRS20752LTRPBF - 200V High-Side Gate Driver | Infineon
The Infineon IRS20752LTRPBF is a 200 V single high-side gate driver IC with single input, non-inverting logic, and integrated bootstrap diode in a compact 6-lead SOT-23 (PG-SOT23-6) package. It delivers typical 0.16 A source and 0.24 A sink gate-drive currents for IGBTs and power MOSFETs. The wide 10 V to 18 V VBS supply range with absolute VBS tolerance up to 200 V makes it well suited for 100 V / 150 V half-bridge and high-side-only topologies used in motor drives, lighting ballasts, and switched-mode power supplies. A high-side gate driver IC is a specialized low-side gate driver that includes a level-shift stage and a floating bootstrap supply, allowing the gate of a high-side N-channel MOSFET or IGBT to be pulled above the system ground. The high-side driver enables the use of low-RDS(on) N-channel devices on the high side instead of P-channel devices, reducing conduction loss. The IRS20752L belongs to Infineon's microHVIC family of compact, integrated gate-driver ICs. Key features include 200 V absolute maximum offset voltage on the high-side rail, integrated bootstrap diode to reduce external component count, VCC under-voltage lockout for safe start-up, and matched propagation delay between turn-on and turn-off paths to limit duty-cycle distortion. The SOT-23-6 footprint allows the part to drop into layouts designed for the legacy IR2301 / IR2302 pinout family. Architecturally the IRS20752L uses a floating level shifter driving a complementary CMOS output stage capable of sourcing 0.16 A and sinking 0.24 A. The asymmetric source/sink ratio favors faster turn-off to limit switching loss and avoid shoot-through in half-bridge designs. The non-inverting single-input control interface simplifies digital control with microcontrollers or PWM controllers. Typical applications include high-side MOSFET/IGBT switching in 24 V / 48 V motor control, Class-D audio output stages, electronic ballasts for HID and LED drivers, DC-DC buck and synchronous rectifier drive, and general-purpose power-tool drives. The 200 V rating supports 100 V AC offline PFC stages when configured as a high-side-only switch. Design consideration: the bootstrap capacitor must be sized so that the refresh charge per switching cycle (Qbs = Qgate + Ileak*ton) does not drop VBS below the UVLO threshold during worst-case duty cycle and maximum on-time.
IRS20955SPBF - 100V Protected Audio Driver | Infineon
The Infineon IRS20955SPBF is a protected digital audio driver for Class D amplifier half-bridge stages, with two outputs, a 100 V rating, a 1.2 A output-current specification, and a 16-SOIC narrow package. Its floating PWM input supports practical half-bridge implementation, while programmable bidirectional over-current protection and self-reset add fault-management capability. Programmable preset dead time is intended to improve total harmonic distortion, and the device provides high noise immunity with ±100 V ratings. A protected digital audio driver is a gate-driver IC that translates a PWM command into high- and low-side drive signals for power MOSFETs. In a Class D audio power stage, the driver sits between a controller and the MOSFET gates, helping establish the required high-side and low-side switching sequence. The IRS20955SPBF belongs to the audio-driver, power-management, and gate-driver hierarchy rather than being an audio signal amplifier itself. The main verified features include a floating PWM input for half-bridge use, programmable bidirectional over-current protection with self-reset, programmable preset dead time, and high noise immunity. The distributor listing identifies the device as a two-channel audio line driver in a 16-SOIC package, while the component search result specifies 100 V, 1.2 A, two outputs, high/low-side half-bridge operation, and inverse/non-inverse drive options. These functions target compact, protected audio output stages where switching-node transients and component protection are important design concerns. The device is intended for Class D audio amplifier applications in which the external power stage uses discrete MOSFETs. Exact switching timing, propagation delay, slew rate, input logic levels, current limits, thermal limits, and pin-level details must be confirmed against the manufacturer datasheet before layout or production use. The verified search data does not provide those values, so they are not inferred here. The available package designation is 16-SOIC, and the manufacturer data identifies a narrow package. Typical application contexts include consumer audio amplifiers, powered speakers, compact Class D stereo systems, and industrial audio equipment. The driver handles the gate-drive sequencing requirement, while the external MOSFETs determine the usable output power. Designers should keep the high-voltage switching node and gate-drive traces compact, provide the required decoupling, and validate dead time against the selected MOSFETs to avoid shoot-through. A key engineering consideration is that IRS20955SPBF is identified as obsolete or end-of-life in the supplied cross-reference result, so new production should confirm lifecycle status, availability, and approved sourcing before commitment. Existing equipment can still benefit from a carefully qualified replacement, but pinout, protection behavior, logic polarity, and timing must be compared rather than assumed. This page consolidates the verified distributor identity, package information, protection features, sourcing links, and application engineering guidance. It is intended to accelerate component identification and design review, while clearly separating verified data from parameters that require confirmation in the manufacturer datasheet.
IRS20957SPBF - 100V Protected Class-D Audio Driver | Infineon
The Infineon Technologies IRS20957SPBF is a protected digital audio driver with a floating PWM input, 100 V output capability, 1.0 A source/sink capability, and a 500 ns response time in a 16-lead narrow SOIC package. Designed for Class-D audio power stages, it drives one half-bridge channel and provides bidirectional current sensing without an external load shunt. Its protected digital audio architecture integrates programmable over-current detection, self-reset behavior, programmable dead time, and shutdown support. These features make the IRS20957SPBF useful in compact audio amplifiers, speaker-drive modules, multimedia systems, and other protected half-bridge power-stage designs. What is a protected digital audio driver? A Class-D audio driver is a gate-drive IC that accepts a PWM command and controls the switching MOSFETs in an audio half-bridge. The IRS20957SPBF provides the gate-drive and current-sense functions required around external power MOSFETs; it is not itself a full audio power amplifier. Its floating PWM input supports convenient half-bridge implementation, while the high-voltage output stage permits a Class-D amplifier topology using suitably rated external transistors. Key features include 100 V MOSFET-driver capability, 1.0 A peak output current, and a 500 ns listed in distributor specifications. The floating PWM input simplifies control-signal interfacing. Bidirectional current sensing detects over-current conditions in positive and negative load-current directions without an external shunt resistor, helping simplify protection in bidirectional audio output stages. Programmable preset dead time can be adjusted for the external MOSFETs and system timing requirements. The device is packaged as a 16-SOIC, narrow-body surface-mount component. Its protected-driver feature set is intended to support robust audio power-stage designs where output-current detection, fault response, and shutdown behavior are important. The half-bridge approach allows the external MOSFETs and speaker output network to be sized independently from the control and driver IC. Exact pin names, timing values, current-limit thresholds, and recommended external-component values should be taken from the Infineon datasheet. Typical uses include mono Class-D speaker amplifiers, compact consumer-audio modules, powered speaker systems, USB or multimedia audio outputs, and industrial audio equipment. The driver can be paired with appropriately rated power MOSFETs, gate resistors, PWM sources, and output filtering. Design attention should focus on MOSFET voltage and current ratings, gate-drive timing, dead-time selection, current-sense thresholds, thermal behavior, and the floating-input common-mode arrangement. For a robust implementation, verify all external MOSFETs against the 100 V driver capability and the intended amplifier voltage. Use the datasheet-recommended protection and shutdown network, provide adequate local decoupling, and route high-current gate and power paths separately from sensitive PWM and current-sense traces. This page consolidates verified manufacturer and distributor information while identifying unspecified parameters for engineer review. This product data summarizes the verified source information, practical design guidance, and sourcing references. It is intended to support engineering selection, not to replace the complete Infineon datasheet for production design, qualification, or safety validation.
IRS20965SPBF Mono Class D Audio Driver | Infineon
The Infineon Technologies IRS20965SPBF is a mono Class D audio driver IC with a protected pulse-width-modulation output stage and a 16-SOIC surface-mount package. Verified distributor data identifies a 1-channel Class D amplifier and a 10 V to 15 V supply range. The listed operating-temperature range is -40 C to +125 C, making the device suitable for industrial, automotive-adjacent, and consumer audio designs that require a compact gate-driver solution. Its primary role is to drive external high-speed power MOSFETs rather than directly deliver full speaker power. A Class D audio driver is a gate-driver device that converts a low-power audio or PWM signal into complementary drive signals for external power MOSFETs. The MOSFETs then perform the high-current switching required to deliver energy efficiently to a speaker. In the system hierarchy, IRS20965SPBF belongs to the semiconductor and power-management-adjacent category of Class D audio drivers, while its external MOSFET stage forms a bridge power stage. This separation allows the driver and output devices to be selected independently for voltage, current, thermal, and cost requirements. The verified 10 V to 15 V supply range is the principal operating constraint identified in the supplied data. The 16-SOIC package provides a conventional surface-mount footprint and separates control, drive, ground, and supply connections according to the manufacturer datasheet. The -40 C to +125 C temperature range supports operation across wide environmental conditions. The Class D architecture is intended for audio systems where switching efficiency and reduced heat dissipation are important, but final amplifier performance depends on the selected MOSFETs, output filter, speaker load, PCB layout, and thermal design. Typical applications include compact speaker amplifiers, multimedia audio equipment, USB or portable audio systems, industrial control cabinets, and external Class D amplifier modules. In these designs, IRS20965SPBF can accept a suitable audio-control signal and drive external power stages. Designers should verify signal timing, dead time, bootstrap or supply requirements, gate-drive voltage, output-device selection, and all absolute maximum ratings against the manufacturer datasheet before layout release. The main design consideration is that the IC is not a complete power amplifier. Its external MOSFET stage must be sized for the intended speaker impedance and output power. Keep high-current switching loops compact, provide adequate decoupling, use a properly designed output filter, and thermally assess the MOSFETs rather than assuming the 16-SOIC package can dissipate their output losses. This page combines verified distributor facts, supply information, sourcing context, application guidance, and explicit design caveats. It does not invent unreported electrical limits or alternate pinouts, and it distinguishes verified facts from parameters that must be checked in the manufacturer datasheet.
IRS2101STRPBF - 600V High/Low-Side Gate Driver IC | Infineon
The Infineon IRS2101STRPBF is a 600 V high-voltage, high-speed power MOSFET and IGBT gate driver with independent high-side and low-side referenced output channels, packaged in an 8-pin SOIC and shipping in Tape & Reel (TRPBF suffix). It delivers typical 0.29 A source and 0.6 A sink gate-drive currents and uses Infineon's proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction. Logic inputs are 3.3 V, 5 V, and 15 V compatible with non-inverting logic, and matched propagation delay keeps both channels in phase. A gate driver IC is a power-management semiconductor that sits between a low-power logic controller (MCU, DSP, FPGA) and a high-power switching transistor (MOSFET, IGBT, GaN). It level-shifts logic-level PWM signals to the much higher gate-drive voltages required to switch the power device efficiently, and provides source/sink current to charge and discharge the gate capacitance quickly. Within the broader IC taxonomy, gate drivers belong to Power Management > Gate Drivers, sitting alongside motor drivers, LED drivers, and voltage supervisors, and they form the critical interface block in every switching power converter, motor drive, and inverter. Key features of the IRS2101STRPBF include: floating channel designed for bootstrap operation, fully operational to +600 V with negative transient voltage tolerance (dV/dt immune), gate drive supply range from 10 V to 20 V, undervoltage lockout (UVLO) for both VCC and VBS rails, and logic operational for VS of -5 V to +600 V with logic state held for VS of -5 V to -VBS. The 8-SOIC footprint with exposed variants is industry standard for half-bridge drivers in the sub-1 A class. Typical applications for the IRS2101STRPBF span motor control (BLDC, PMSM, brushed DC drives), switch-mode power supplies (SMPS) for telecom and industrial DC-DC converters, half-bridge and full-bridge inverters for solar and UPS systems, electronic ballasts and HID lighting drivers, and Class-D audio amplifiers. The 600 V rating covers 110/120/220/230 VAC rectified (up to ~325 VDC bus), while the 0.6 A sink current comfortably drives MOSFETs in the 200-500 nC Qg range at switching frequencies up to several hundred kHz. When designing with this device, always observe the bootstrap capacitor sizing rule (typically ≥1 µF low-ESR ceramic, plus a local diode rated for the bus voltage) and keep the high-side gate loop area minimal to limit parasitic inductance. The shutdown pin (SD) allows fault-input blanking, and designers should consult Infineon Design Tip DT97-3 for negative-VS transient handling details. This page synthesizes distributor pricing, drop-in alternatives from the Infineon IRS2101 family and competing 8-pin SOIC gate drivers, and practical design notes not consolidated in the manufacturer datasheet.
IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS2104STRPBF is a 600 V high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with dependent high-side and low-side referenced output channels, housed in an 8-pin SOIC package. It delivers typical 0.29 A source and 0.6 A sink output currents, supports VCC logic supply of 10 V to 20 V, and operates across a -40C to +150C junction temperature range. The IRS2104 includes a dedicated SD (shutdown) pin and proprietary HVIC plus latch-immune CMOS technologies that enable ruggedized monolithic construction. A half-bridge gate driver is a power-management IC that translates low-voltage PWM control signals into the high-current, floating high-side drive required to switch the upper transistor in a half-bridge or full-bridge power stage. It sits in the broader hierarchy of gate driver IC -> driver -> power management IC -> semiconductor, and is the critical interface between an MCU/controller and the high-voltage switching devices (MOSFETs or IGBTs) used in motor drives, power supplies, and lighting inverters. Key features of the IRS2104STRPBF include typical 150 ns propagation delay, 35 ns rise time, 70 ns fall time, 150 uA quiescent current, and integrated undervoltage protection (UVLO) for both the logic and bootstrap supplies. The high-side channel is built on a proprietary floating bootstrap structure that tolerates VS offsets from -5 V to +600 V, allowing direct drive of the high-side switch in a 400 V or 600 V DC bus without an auxiliary supply. The monolithic HVIC process enables the high-side level-shifter, the low-side driver, the UVLO blocks, and the input logic to coexist on a single die, reducing BOM count and improving reliability versus discrete bootstrap drive circuits. The 8-pin SOIC footprint is industry-standard for half-bridge drivers, simplifying PCB layout and enabling second-source flexibility. Typical applications include low-power motor drives for fans, pumps and small appliances; SMPS half-bridge and full-bridge converters; fluorescent and HID lighting ballasts; Class D audio amplifiers; and any 110/220 VAC-line-rectified half-bridge topology where a single PWM input must switch both the high-side and low-side MOSFETs from a compact 8-pin package. When designing with the IRS2104STRPBF, choose a bootstrap diode with fast recovery and a Vbr of at least 600 V, and a 0.1 uF to 1 uF ceramic bootstrap capacitor sized to refresh the high-side supply within the minimum pulse width. Maintain VS below 600 V and respect the SD pin logic timing to avoid unwanted shutdowns during load transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, helping engineers select and source the IRS2104STRPBF for new and existing designs.
IRS2106STRPBF - 600V Half-Bridge Gate Driver, 0.6A SOIC-8 | Infineon
The Infineon IRS2106STRPBF is a 600 V high-side and low-side gate driver IC in an 8-pin SOIC package, designed to drive power MOSFETs and IGBTs in half-bridge configurations. According to the manufacturer datasheet, it delivers 0.29 A typical source current and 0.6 A typical sink current per channel with non-inverting logic inputs, a single shutdown pin, and all high-voltage pins rated to 600 V. The IC is a Tape and Reel variant (suffix "STRPBF") of the IRS2106S family originally developed by International Rectifier, now owned by Infineon. A half-bridge gate driver is a specialized power-management IC that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the high-side and low-side MOSFETs/IGBTs in a half-bridge, full-bridge, or three-phase inverter. In the power-electronics hierarchy, the IRS2106STRPBF sits between the control IC and the discrete switching devices, providing level shifting, bootstrap drive for the high side, and gate-drive strength that controllers alone cannot deliver. Its proprietary HVIC and latch-immune CMOS processes enable monolithic integration of the high-voltage level shifter with low-voltage logic. Key specifications include 600 V maximum offset voltage on the high-side channel, 10 V to 20 V gate-drive supply (VCC), up to 25 V VBS bootstrap supply, 200 ns typical turn-on/off propagation delay, and 50 ns built-in deadtime matching between the two channels. The SD (shutdown) input disables both outputs simultaneously, providing a clean way to implement fault protection. Under-voltage lockout (UVLO) on both VCC and VBS prevents the power switches from being driven into their linear region during low-supply conditions, a frequent cause of MOSFET/IGBT thermal failures. The IRS2106STRPBF is intended for motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, DC-DC converters, and class-D audio amplifiers. Its 600 V rating covers 110/120/220/230 V AC rectified rails (up to about 400 V DC bus) and 400 V class industrial motor-drive buses. The 0.6 A sink current is sufficient for MOSFETs in the low-to-mid current range; higher-power IGBTs may require an external buffer such as the IR2128 or IXDN609. When designing with the IRS2106STRPBF, the bootstrap diode and capacitor form the high-side supply and must be sized for the worst-case PWM duty cycle; a slow reverse-recovery diode or undersized capacitor causes high-side UVLO and shoot-through. Place the bootstrap capacitor as close to pins VBS and VS as possible. The SD pin should be pulled high during normal operation; an RC delay of a few microseconds on SD provides clean power-on behavior. This page consolidates distributor pricing, package-aware drop-in alternatives, and PCB layout considerations that are not all present in the datasheet application diagram.
IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS21091STRPBF is a 600V half-bridge gate driver IC with shutdown and programmable deadtime, packaged in an 8-pin SOIC (0.154", 3.90mm width). It features typical 0.29 A source and 0.6 A sink gate-drive currents and is designed to drive IGBTs and N-channel MOSFETs in high-side and low-side configurations. According to the manufacturer datasheet, the floating channel is fully operational to +600V and is tolerant to negative transient voltages with dV/dt immunity, while the gate drive supply range is 10 V to 20 V. A half-bridge gate driver is a type of power-management IC that sits between a low-voltage control signal (typically from a microcontroller or PWM controller) and the gate of a high-voltage power switch. The high-side output uses a bootstrap capacitor technique to generate a floating supply above the bus voltage, which is necessary to turn on an N-channel MOSFET or IGBT in the upper leg of the half-bridge. Half-bridge drivers belong to the broader family of gate drivers, which in turn sit within the power management IC hierarchy. Key features of the IRS21091STRPBF include a 600V floating channel, typical 290 mA source / 600 mA sink gate-drive current, a low 750 ns propagation delay, a logic input compatible with standard CMOS or LSTTL outputs down to 3.3 V logic, an integrated shutdown pin, and user-programmable deadtime to prevent shoot-through. The matched propagation delays between the two channels keep PWM duty-cycle distortion low. The output drivers use a high-pulse-current buffer stage designed to minimize driver cross-conduction. Architecturally, the part uses Infineon's high-voltage BCDMOS process. A level-shifter couples the low-voltage logic input to the high-side floating channel, while the bootstrap diode (or external bootstrap diode) charges the bootstrap capacitor off the VCC rail on every low-side cycle. The integrated deadtime control lets designers trade margin against switching loss without an external timing network. Typical applications include motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge converters, and any high-voltage synchronous-rectification topology where IGBT or MOSFET gates must be driven above the bus rail. Designers choose this part when they need 600V tolerance in a compact 8-SOIC, with logic-level inputs that can be driven directly from a 3.3 V MCU. A primary design tip: the bootstrap capacitor value is critical. Too small a capacitor causes the high-side UVLO to trip under load; too large slows startup. A 0.1 uF to 1 uF X7R ceramic is typical, sized using the Qg of the driven MOSFET, the switching frequency, and the gate charge per cycle. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRS2109STRPBF - 600V Half-Bridge Gate Driver SOIC-8 | Infineon
The Infineon IRS2109STRPBF is a 600 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink output currents, packaged in an 8-lead SOIC. It is designed to drive power MOSFETs and IGBTs in half-bridge and full-bridge power topologies operating up to 600 V, with a floating channel that tolerates negative transient voltages on the high-side rail. A gate driver (also called a MOSFET driver or IGBT driver) is a power amplifier that sits between a low-power control signal (typically 3.3 V or 5 V logic from a microcontroller or PWM controller) and the gate of a high-power switching transistor. Because the gate of a power MOSFET or IGBT presents a large capacitive load (often several nanofarads), the control signal alone cannot switch the device fast enough. Gate drivers like the IRS2109STRPBF sit in the broader taxonomy: gate driver -> driver IC -> power management IC -> semiconductor. They provide the level-shifting, peak current, and isolation required to switch the transistor cleanly at high frequencies, reducing switching losses and improving overall power-conversion efficiency. Key features of the IRS2109STRPBF include 540 ns typical propagation delay, fixed internal deadtime of 540 ns to prevent shoot-through in half-bridge configurations, soft turn-on to reduce EMI, a single PWM input, and integrated bootstrap diode support for the high-side supply. The wide VCC supply range (10 V to 20 V) allows it to drive both standard and logic-level MOSFETs. The floating channel is fully operational to +600 V, with transient tolerance to negative voltages on the switch node. Architecturally, the IRS2109STRPBF uses a level-shifted high-side driver and a low-side driver referenced to VCC, with built-in deadtime generation to ensure the high-side and low-side outputs cannot be on simultaneously. The proprietary HVIC (High-Voltage IC) process allows monolithic integration of the level-shifter with the gate driver output stage. The soft turn-on feature (controlled output dV/dt) reduces EMI and ringing when the power stage switches, which simplifies PCB layout and EMI filtering. Typical applications include motor drives (BLDC, PMSM, induction motor variable-frequency drives), switch-mode power supplies (SMPS), half-bridge and full-bridge DC-DC converters, HID lighting ballasts, and D-class audio amplifiers. The part is commonly used in industrial motion control, solar inverters, induction cooking, and uninterruptible power supplies (UPS). When designing with this part, the bootstrap capacitor must be sized to hold VBS above the UVLO threshold during the high-side on-time, and a local bypass capacitor should be placed directly on the VCC and VBS pins. The fixed 540 ns deadtime limits the maximum practical switching frequency to about 1 MHz and should be considered when targeting very-high-frequency designs. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and practical design notes not found in the manufacturer datasheet alone.
IRS2110SPBF - 500V High/Low Side 2.5A Gate Driver SOIC-16
The Infineon (formerly International Rectifier) IRS2110SPBF is a 500 V half-bridge gate driver IC delivering 2.5 A peak source/sink output current in a 16-pin SOIC package with independent high-side and low-side referenced output channels. Built on proprietary HVIC and latch-immune CMOS technology, it provides monolithic rugged construction for driving power MOSFETs and IGBTs in switching converter topologies. A gate driver IC is an interface device between low-power control logic (such as a microcontroller PWM output or analog controller) and the high-power gate of a switching transistor. It supplies the high transient current required to charge and discharge the gate capacitance quickly, reducing switching losses, and provides level-shifting so a low-voltage control signal can drive a high-side switch referenced to the switching node. Gate drivers belong to the broader category of power management ICs, sitting between signal-level controllers and the discrete power stage. Key features of the IRS2110SPBF include fully operational bootstrap operation to +500 V, 120 ns propagation delay (typical), undervoltage lockout for both VCC and VBS supplies, and TTL/CMOS compatible logic inputs with hysteresis. The driver accepts a logic supply (VCC) of 10 V to 20 V and a floating supply up to 500 V offset, supporting high-side N-channel MOSFET or IGBT switching in bridge configurations. The IRS2110SPBF uses a level-shifted high-side channel with a floating bootstrap supply that allows the high-side gate drive to track the switching node voltage up to 500 V. The monolithic HVIC construction eliminates optocoupler or pulse-transformer isolation in the drive path, shrinking BOM count and improving noise immunity. Undervoltage lockout on both VCC and VBS prevents driving the power stage with insufficient gate voltage, which would otherwise cause high R_DS(on) losses. Typical applications include motor drive inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and half-bridge/full-bridge DC-DC converters. The 500 V rating suits 230 VAC offline rectifier-fed systems where 400 V bus rails are common. When designing with this device, the bootstrap capacitor must be sized to deliver the gate charge of the high-side FET plus enough hold-up time at the lowest PWM duty cycle. A 0.1 uF to 1 uF ceramic bypass on VCC/VBS is mandatory. Do not exceed the absolute maximum VBS of 25 V and do not let the high-side float for extended periods without refresh pulses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon
The Infineon IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver with independent high-side and low-side referenced output channels, delivering 2.5 A source and 2.5 A sink typical gate-drive current in a 16-pin SOIC Wide-Body (SOIC-WB) package. The device features a 500 V offset voltage rating, an integrated bootstrap diode, and a shutdown input, and operates from a gate-drive supply range of 10 V to 20 V. A half-bridge gate driver is a power-management IC that translates low-power PWM signals from a controller into the high-current, high-voltage drive required to switch the gate of a high-side or low-side power MOSFET or IGBT in a half-bridge or full-bridge power stage. Within the system hierarchy, this function sits between the digital control IC and the power switches, forming part of the broader gate-driver class, which itself belongs to the power-management integrated circuit family used in switch-mode power supplies, motor drives, and lighting ballasts. Key features of the IRS2110STRPBF include a 500 V maximum offset voltage, 2.5 A typical source and sink gate-drive current, a 30 ns typical propagation delay for ton/toff, an integrated bootstrap diode that eliminates an external discrete part, and an active-low shutdown input that forces both outputs low. The SOIC-16 Wide-Body package offers a large die-attach paddle, supporting reliable thermal performance at switching frequencies above 100 kHz. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction that is tolerant to negative transient voltages and dV/dt noise on the switching node. The high-side channel is implemented as a floating bootstrap structure, so it can operate up to 500 V above the low-side return, making the part suitable for offline and motor-drive applications where the switching node swings between the rectified mains and ground. Typical applications include three-phase motor drives for industrial pumps and fans, half-bridge and full-bridge converters for switch-mode power supplies, electronic ballasts for fluorescent and HID lighting, and solenoid or actuator drivers in 12 V to 400 V automotive and industrial systems. The wide VCC range also supports battery-powered 48 V to 400 V bus architectures. When designing with this part, place the bootstrap capacitor (typically 0.1 µF to 1 µF low-ESR ceramic) close to the VB and VS pins, and ensure the high-side return (VS) is connected to the source of the high-side switch. A VCC bypass of at least 0.1 µF plus a 1 µF bulk is recommended to suppress switching noise. This page synthesizes distributor pricing, drop-in half-bridge driver alternatives, and practical HVIC layout notes not found in the manufacturer datasheet alone.
IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2112STRPBF is a 600 V half-bridge gate driver IC with shutdown input, delivering typical 0.29 A source and 0.6 A sink currents in a 16-pin SOIC wide-body package. Designed for IGBT and MOSFET half-bridge topologies, it combines a floating high-side driver and a ground-referenced low-side driver on a single die, with gate drive supply range from 10 V to 20 V and logic supply range from 3.3 V to 20 V. A half-bridge gate driver IC is a type of power management semiconductor that translates low-power PWM control signals from a microcontroller or DSP into high-current drive signals capable of switching the gates of two stacked power switches (high-side and low-side). It sits hierarchically between the control IC and the power stage in motor drives, DC-DC converters, and class-D audio amplifiers, where it provides level shifting, bootstrap support, and undervoltage protection. Key features include fully operational +600 V floating channel, dV/dt immunity, tolerance to negative transient voltages on the high-side, separate logic and gate-drive grounds, undervoltage lockout for both channels, 3.3 V logic compatibility, and a dedicated shutdown pin for fast protection turn-off. The wide-body SOIC-16 footprint offers an exposed thermal path suitable for moderate switching frequencies up to several hundred kHz. The IRS2112STRPBF uses a proprietary HVIC and latch-immune CMOS process that delivers matched propagation delays between the high-side and low-side channels, preventing cross-conduction in the half-bridge. The floating channel uses a bootstrap capacitor to develop the high-side supply, simplifying the drive circuitry and reducing BOM cost compared to isolated gate-drive solutions. Typical applications include permanent-magnet synchronous motor (PMSM) drives, three-phase inverter stages, half-bridge and full-bridge DC-DC converters, induction-heating converters, and class-D audio amplifiers. The 600 V rating comfortably supports 400 V rectified-mains systems with adequate derating. When designing with this device, choose the bootstrap capacitor value carefully: C_Boot >= Q_gate / (V_CC - V_F - V_GS(min)) where Q_gate is the total gate charge of the high-side MOSFET/IGBT. The shutdown pin can be wire-OR'd with the fault output of a comparator for hardware-level overcurrent protection. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical bootstrap design notes not found in the standalone datasheet, giving engineers a faster path to a working half-bridge prototype.
IRS2113PBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS2113PBF is a 600 V high and low side gate driver IC with 2.5 A source and 2.5 A sink output currents, packaged in a 14-lead PDIP through-hole package. Designed using proprietary HVIC and latch-immune CMOS technologies, this monolithic gate driver features independent high-side and low-side referenced output channels for driving power MOSFETs and IGBTs in half-bridge configurations. The floating channel is designed for bootstrap operation, with fully operational +600 V offset and tolerance to negative transient voltages on the high-side supply pin. A gate driver is a power-management IC that translates low-power logic-level PWM signals from a controller (such as a microcontroller, DSP, or motion ASIC) into high-current gate-drive signals capable of switching a power MOSFET or IGBT at high speed. In the EVICS taxonomy, the IRS2113PBF belongs to the gate driver -> power MOSFET/IGBT driver -> power management IC -> semiconductor hierarchy. Half-bridge gate drivers specifically produce two complementary outputs (HO and LO) with built-in dead-time/matching that drive the high-side switch and the low-side switch of a totem-pole power stage used in motor drives, inverters, and switching power supplies. Key electrical specifications include a maximum offset supply voltage of 600 V, gate drive current capability of 2.5 A source and 2.5 A sink, an integrated shutdown (SD) pin, and 10 V to 20 V VCC operating range. The driver exhibits dV/dt immunity and tolerance to negative VS transients, which protects the high-side channel when the low-side switch pulls the switch node below ground during commutation. The IRS2113 variant differs from the IRS2110 family by adding the SD logic input. Architecturally, the IRS2113PBF pairs a level-shifting high-side channel with a ground-referenced low-side channel. The high side is powered by an external bootstrap capacitor that is recharged every switching cycle through a low-side body-diode path, eliminating the need for an isolated DC supply. This bootstrap topology is what allows the chip to drive an N-channel MOSFET or IGBT on the high side of a 600 V bus from a single low-voltage VCC rail. Typical applications include three-phase motor drives (HVAC compressors, industrial pumps, BLDC fans), solar microinverters and string inverters, switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and welding equipment. The SD input enables fast fault shutoff of both channels, which is useful in motor-control and Class-D audio amplifiers where the controller must disable outputs quickly during overcurrent events. When designing with the IRS2113PBF, place the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic) directly between VB and VS, and use a low-ESR VCC bypass (10 uF + 0.1 uF). The high-side return (VS) is a switching node that swings rapidly; keep the bootstrap loop compact to limit ringing and to avoid false triggering on dV/dt edges. This page synthesizes distributor pricing, drop-in pin-for-pin alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon
The Infineon IRS21271STRPBF is a 600 V single-channel high-side gate driver IC with integrated over-current sensing and fault reporting, housed in an 8-lead SOIC (surface-mount) package. It delivers a typical 0.29 A source and 0.6 A sink gate-drive current, an automotive-grade gate drive range of 9 V to 20 V, and logic inputs that are CMOS/LSTTL-compatible down to 3.3 V. According to Infineon's product page, this IC is engineered for switching IGBTs and MOSFETs in high-voltage half-bridge and high-side configurations. What is a high-side gate driver? A high-side gate driver is a power-management IC that level-shifts a low-voltage logic command (typically 3.3 V or 5 V from a microcontroller) up to the floating source connection of a high-side switch (such as the upper MOSFET in a half-bridge). Without a high-side driver, a controller cannot reliably turn on a switch whose source is floating on top of the bus voltage. High-side drivers sit inside the broader gate-driver hierarchy: gate driver -> half-bridge driver -> motor/power driver -> power management IC, and they are essential building blocks in motor drives, solar inverters, industrial SMPS, and automotive powertrain electronics. Key features of the IRS21271STRPBF include integrated current-sense comparator input, dedicated FAULT output pin for hardware protection, dV/dt noise immunity, tolerance to negative transient voltages on the VS pin, and compatibility with bootstrap supply generation for the floating high-side rail. The 8-SOIC package is JEDEC-standard and supports automated SMT assembly lines. Technically, the IRS21271STRPBF uses Infineon's proprietary HVIC (high-voltage integrated circuit) process combined with latch-immune CMOS, allowing the high-side channel to float up to 600 V continuously while the low-voltage logic stays referenced to ground. The internal current-sense comparator allows direct shunt-resistor monitoring without an external op-amp, which simplifies PCB layout and reduces BOM cost. Typical applications include automotive 12 V and 24 V motor drives, HVAC blower and pump controls, e-bike and e-scooter inverter stages, solenoid and relay drivers, and small appliance BLDC/PMSM motor control. The over-current fault output is especially useful in safety-critical automotive subsystems. When designing with this device, always include a bootstrap diode and capacitor on VB and VS to refresh the floating supply each switching cycle. Size the bootstrap capacitor to deliver at least 10x the total gate charge of the driven MOSFET/IGBT to keep VBS above the UVLO threshold. Use a low-ESR ceramic bypass cap on VCC and place the current-sense filter RC network within 5 mm of the CS pin to avoid false tripping.
IRS2127STRPBF - 600V High-Side Gate Driver IC | Infineon
The Infineon IRS2127STRPBF is a 600 V single high-side gate driver IC with over-current protection and fault reporting, delivering typical 0.29 A source and 0.6 A sink currents in an 8-lead SOIC package for IGBTs and MOSFETs. It operates with a gate drive supply range of 12 V to 20 V for motor drive applications and supports non-inverting input logic with an integrated current-sense comparator. A high-side gate driver IC is a specialized power management device that level-shifts a low-voltage logic input (typically 3.3 V or 5 V) up to the much higher floating rail needed to drive the upper switch in a half-bridge or high-side switching topology. It sits within the power management IC hierarchy (gate driver -> driver IC -> power management IC -> semiconductor), and is essential when a low-voltage MCU cannot directly drive a high-side power switch referenced to the switching node. Key features include a 600 V absolute maximum offset voltage allowing bootstrap operation to -9 V on the VS pin, undervoltage lockout (UVLO) for safe bootstrap startup, and a dedicated FAULT output for cycle-by-cycle over-current shutdown. The IRS2127 integrates a current-sense comparator with an external resistor-programmable threshold, eliminating the need for a separate protection IC and shortening fault response time to under 1 us. The device also features dV/dt immunity and is tolerant to negative transient voltages on the VS node. The IRS2127STRPBF uses a high-voltage level-shift architecture with integrated charge-pump biasing and CMOS input logic compatible with 3.3 V and 5 V microcontrollers. The bootstrap supply is generated externally by a single bootstrap diode and capacitor, keeping the IC compact while supporting switching frequencies above 100 kHz in motor drive and SMPS topologies. Typical applications include variable-frequency motor drives, industrial inverters, switched-mode power supplies (SMPS), and any high-side switch where cycle-by-cycle over-current protection is required. For automotive applications requiring 9 V to 20 V gate drive, the IRS21271STRPBF is the pin-compatible drop-in variant. Designers should use a fast-recovery bootstrap diode and a low-ESR bootstrap capacitor (1 uF X7R minimum) sized for the worst-case duty cycle and switching frequency. Place the sense resistor in the source return path and decouple VCC with a local 1 uF ceramic capacitor to keep the FAULT output immune to switching noise.