2EDN7533RXTMA1 vs 1EDN7116GXTMA1 Comparación
Comparación detallada lado a lado de 2EDN7533RXTMA1 por Infineon y 1EDN7116GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2EDN7533RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,84 |
| Función | Dual-channel low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | — |
| Input Polarity | Inverting | — |
| Peak Source/Sink Output Current | 5 A | — |
| Output Resistance (Pull-up, typ.) | 0.5 ohm | — |
| Output Resistance (Pull-down, typ.) | 0.3 ohm | — |
| Propagation Delay (typ.) | 19 ns | — |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) | — |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V | — |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V | — |
| Supply Voltage VDD (absolute max) | 25 V | — |
| Under-Voltage Lockout | Yes (per channel) | — |
| Temperatura de unión de funcionamiento | -40 C to +150 C | — |
| Encapsulado | PG-TSSOP-8 (HTSSOP) with exposed pad | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Rango de temperatura de funcionamiento | — | -40 °C to +125 °C |
| Nivel MSL | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |