6EDL04N03PRXUMA1 vs 2EDL8033G4CXTMA1 Comparación
Comparación detallada lado a lado de 6EDL04N03PRXUMA1 por Infineon y 2EDL8033G4CXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 6EDL04N03PRXUMA1 | 2EDL8033G4CXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $2,84 |
| Driver Type | Three-phase gate driver (6-channel half-bridge) | — |
| Number of Drivers | 6 | — |
| Configuración de salida | Non-inverting half-bridge | — |
| Supply Voltage (VDD) | 10 V to 25 V | — |
| Logic Supply Voltage (VSS) | 3.3 V / 5 V | — |
| Output Current (Source) | 0.24 A | — |
| Output Current (Sink) | 0.375 A | — |
| Tiempo de subida | 60 ns (typical at 1 nF load) | — |
| Tiempo de bajada | 26 ns (typical at 1 nF load) | — |
| Bootstrap Diode | Integrated (3 channels) | — |
| Over-Current Protection | Yes (adjustable threshold via ITRIP) | — |
| Fault Output | Yes (open-drain) | — |
| Patilla de habilitación | Yes (EN, active-high) | — |
| Propagation Delay | [DATA_NEEDED: propagation delay] | — |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | PG-TSSOP-25 | PG-VDSON-10-2 (10-pin VDSON with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 3 | — |
| Estado RoHS | Compliant | Compliant |
| Blocking Voltage | 200 V / 600 V family | — |
| Product Type | — | Half-Bridge Gate Driver IC |
| Configuration | — | High-Side / Low-Side, Non-Inverting |
| Número de salidas | — | 2 (HS + LS) |
| Source Drive Current | — | 3 A |
| Sink Drive Current | — | 4 A |
| Bootstrap Voltage (Max) | — | 120 V |
| VCC Supply Voltage | — | 10 V to 20 V |
| Logic Input Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Isolation Technology | — | Junction-isolated |
| Propagation Delay (Typ) | — | 45 ns |
| Channel-to-Channel Matching | — | <10 ns |
| Integrated Bootstrap Diode | — | Yes |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Marking Code | — | 2ED8033G4C |