BAT41-TAP vs BAT41 Comparación
Comparación detallada lado a lado de BAT41-TAP por Vishay Intertechnology y BAT41 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Vishay Intertechnology
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
BAT41-TAP ✓ ActivoComparación de especificaciones
| Parámetro | BAT41-TAP | BAT41 |
|---|---|---|
| Marca | Vishay Intertechnology | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,03 |
| Diode Type | Small Signal Schottky Barrier | — |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current | 100 mA | — |
| Non-Repetitive Peak Forward Current (IFSM) | 750 mA | — |
| Encapsulado | DO-204AH (DO-35) axial through-hole | DO-35 (Glass), axial through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Turn-On Voltage | Low (Schottky barrier) | Very low (low turn-on, per ST datasheet) |
| Switching Speed | Extremely fast, low forward and reverse recovery times | — |
| ESD Protection | PN junction guard ring | Integrated guard-ring protection against excessive voltage such as ESD |
| Intended Use | General purpose, switching mode with low IR losses | — |
| Automotive Qualification | AEC-Q101 qualified version available (part number on request) | — |
| Configuration | Single diode | Single diode |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage (VF)] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: Reverse Leakage Current (IR)] | [DATA_NEEDED: reverse leakage at rated VR] |
| Junction Capacitance (CJ) | [DATA_NEEDED: Junction Capacitance (CJ)] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating junction temperature range] |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS compliance statement] |
| Device Type | — | Small Signal Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 100 V |
| Average Forward Current (IF(AV)) | — | 100 mA |
| Technology | — | Metal-to-silicon Schottky with PN guard ring |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated test current] |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance value] |
| Reverse Recovery Time | — | Very low (fast switching, per ST datasheet) |
| Series Package Options | — | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 |