BSC010NE2LSIATMA1 vs BSC014N04LSIATMA1 Comparación
Comparación detallada lado a lado de BSC010NE2LSIATMA1 por Infineon y BSC014N04LSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC010NE2LSIATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,39 |
| Manufacturer | Infineon Technologies | — |
| Series / Family | OptiMOS 25V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Encapsulado | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 5 (trench, thin-wafer) |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55 C to +150 C |
| Recuento de pines | 8 | — |
| Estado RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Tradename | — | OptiMOS |