BSC028N06NSTATMA1 vs BSC097N06NSATMA1 Comparación
Comparación detallada lado a lado de BSC028N06NSTATMA1 por Infineon y BSC097N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC028N06NSTATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,40 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +150C |
| Encapsulado | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Nivel MSL | 1 | 1 (Unlimited) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Encapsulado / Carcasa | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |