BSC028N06NSTATMA1 vs IPT008N06NM5LFATMA1 Comparación
Comparación detallada lado a lado de BSC028N06NSTATMA1 por Infineon y IPT008N06NM5LFATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC028N06NSTATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,40 | $5,40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-HSOF-8 (single, flat-lead) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Part Family | — | OptiMOS 5 / Linear FET |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 454 A |
| Corriente de drenador pulsada | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | — | 278 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |