BSC036NE7NS3GATMA1 vs BSC120N03LSGATMA1 Comparación
Comparación detallada lado a lado de BSC036NE7NS3GATMA1 por Infineon y BSC120N03LSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ ActivoInfineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC036NE7NS3GATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | — |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | — |
| Rise Time (tr typ) | 13 ns | — |
| Fall Time (tf typ) | 11 ns | — |
| Power Dissipation (PD max, Tc=25C) | 156 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +150C (TJ) |
| Encapsulado | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | ROHS3 Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |