BSC059N04LSGATMA1 vs BSC027N06LS5ATMA1 Comparación
Comparación detallada lado a lado de BSC059N04LSGATMA1 por Infineon y BSC027N06LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC059N04LSGATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $0,66 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | — |
| Continuous Drain Current (ID, Ta=25C) | 16 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | — |
| Power Dissipation (Tc=25C) | 50 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55°C to +150°C |
| Encapsulado | PG-TDSON-8-5 (SuperSO8 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Encapsulado / Carcasa | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Recuento de pines | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |