BSC0921NDIATMA1 vs BSF134N10NJ3GXUMA1 Comparación
Comparación detallada lado a lado de BSC0921NDIATMA1 por Infineon y BSF134N10NJ3GXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC0921NDIATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | Trench-gate OptiMOS planar |
| Configuration | Dual N-Channel MOSFET Array | Single with built-in diode |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) | 17 A (per channel) | — |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | — |
| Total Power Dissipation (PD) | 1 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | [DATA_NEEDED: Qg value] |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Encapsulado | PG-TISON-8 (8-pin, exposed pad) | MG-WDSON-2 (CanPAK M) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per Infineon OptiMOS family) | [DATA_NEEDED: MSL rating] |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | — |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |