BSL308CH6327XTSA1 vs BSP88H6327XTSA1 Comparación
Comparación detallada lado a lado de BSL308CH6327XTSA1 por Infineon y BSP88H6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSL308CH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,21 | $0,21 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | Single |
| Encapsulado | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | 18 pF | [DATA_NEEDED: Ciss] |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Sin halógenos | Yes (per Infineon product family convention) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) | — | 350 mA at Ta=25 C |
| Power Dissipation (PD) | — | 1.8 W at Ta=25 C |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Temperatura de funcionamiento | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Drain Tab Connection | — | SOT-223 tab is drain |